CN108172559A - 安装结构体 - Google Patents

安装结构体 Download PDF

Info

Publication number
CN108172559A
CN108172559A CN201710967563.1A CN201710967563A CN108172559A CN 108172559 A CN108172559 A CN 108172559A CN 201710967563 A CN201710967563 A CN 201710967563A CN 108172559 A CN108172559 A CN 108172559A
Authority
CN
China
Prior art keywords
boundary layer
intermetallic compound
layer
assembling structure
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710967563.1A
Other languages
English (en)
Inventor
日根清裕
古泽彰男
北浦秀敏
酒井树
酒井一树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN108172559A publication Critical patent/CN108172559A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29209—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29211—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29213—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29239—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29247—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29255—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29257—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32501—Material at the bonding interface
    • H01L2224/32503—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32505—Material outside the bonding interface, e.g. in the bulk of the layer connector
    • H01L2224/32507—Material outside the bonding interface, e.g. in the bulk of the layer connector comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
    • H01L2224/83011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83024—Applying flux to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83095—Temperature settings
    • H01L2224/83096—Transient conditions
    • H01L2224/83097—Heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83095—Temperature settings
    • H01L2224/83096—Transient conditions
    • H01L2224/83098—Cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

本发明提供一种耐受因接合面积大而产生的大的热应力、抑制因反复温度变化引起的龟裂的发生和发展的安装结构体。本发明的安装结构体，是2个构件通过在与所述2个构件的界面处分别具有第1界面层和第2界面层的接合材料层进行接合而得的安装结构体，所述接合材料层包含第1金属间化合物和应力缓和物，所述第1金属间化合物具有球状、柱状和椭球状中的任一种形状并具有与所述第1界面层和所述第2界面层相同的晶体结构，并且所述第1金属间化合物闭塞所述第1界面层和所述第2界面层之间的一部分，所述应力缓和物填充所述第1金属间化合物的周围并以Sn为主成分。

Description

安装结构体
技术领域
本发明涉及能够用于功率器件(power device)等设备的、具有2个构件由金属材料接合而成的结构的安装结构体。
背景技术
在功率器件或LED等伴有发热的设备中，以产生的热的散热为目的，使用为了实现从装载有元件的基板向散热部的热传输而将基板与散热部接合的安装结构体。
近年来，在功率器件等设备中，伴随着输出增大化，发热量也变大。由此，要求在这些设备中更高效地进行散热。目前，为了高效地进行散热，推行的是上述安装结构体的构件间的接合部的大面积化。这是因为：通过进行大面积化，能够使释放出热的路径增大，可以更高效地进行散热。
然而，在安装结构体的操作期间，伴随着操作的发热引起接合部的温度上升，因此在2个构件的材质不同的情况下，在接合部产生大小依赖于2个构件的线膨胀系数的差的热应力、热应变。作为安装结构体的接合部所使用的接合材料，从可以在低温下进行接合的观点出发，广泛地使用焊接材料，但伴随着接合部的大面积化，上述热应变和热应力增大，因此在接合部反复发生温度变化的情况下，存在焊料接合部发生龟裂的问题。在接合部中龟裂的发生会导致散热性的降低、接合强度的降低，因此要求即使是大于10mm2这样的大面积的接合部也能耐受反复温度变化引起的龟裂发展的安装结构体。
作为以往的龟裂的发展难以发生的安装结构体，已知例如专利文献1所记载的安装结构体。该安装结构体通过将第1金属(例如，Sn或包含Sn的合金)和具有比第1金属的熔点更高的熔点的第2金属(例如，Cu-Ti合金、Cu-Mo合金等Cu基合金)加热至第1金属的熔点以上的温度而生成金属间化合物来进行接合。此处，生成的金属间化合物具有比第1金属的熔点更高的熔点。
现有技术文献
专利文献
专利文献1：国际公开第2015/079844号
发明内容
发明要解决的问题
在通过生成金属间化合物而制作的专利文献1所记载的安装结构体中，由于在不使低熔点的Sn残留的情况下生成高熔点的金属间化合物，因此接合部具有高强度和优异的耐热性，但生成的金属间化合物非常脆。另外，生成金属间化合物时，由金属间化合物与Sn的体积差引起的收缩导致面积越大接合部越容易残留空隙。因此，存在由于接合面积大而产生的大的热应力导致容易引起龟裂发展的问题。
本发明是为了解决上述问题而做出的，其目的在于提供一种耐受因接合面积大而产生的大的热应力、抑制因反复温度变化引起的龟裂的发生和发展的安装结构体。
用于解决问题的手段
为了解决上述问题，本发明的安装结构体是2个构件通过在与2个构件的界面处分别具有第1界面层和第2界面层的接合材料层进行接合而得的安装结构体，其中：
接合材料层包含第1金属间化合物和应力缓和物，
第1金属间化合物具有球状、柱状和椭球状中的任一种形状并且具有与第1界面层和第2界面层相同的晶体结构，该第1金属间化合物闭塞第1界面层和第2界面层之间的一部分，
应力缓和物填充第1金属间化合物的周围并以Sn为主成分。
在本说明书中，“主成分”是指应力缓和物所含的元素中存在比率最高的元素。
发明效果
根据本发明，提供一种耐受因接合面积大而产生的大的热应力、抑制因反复温度变化引起的龟裂的发生和发展的安装结构体。
附图说明
图1是本发明的1个实施方式中的安装结构体的第1和第2构件的层叠方向的截面图。
附图标记说明
101 第1构件
102 第1被接合材料
103 第2构件
104 第2被接合材料
105 第1界面层
106 第2界面层
107 第1金属间化合物
108 应力缓和物
109 接合材料层
110 第2金属间化合物
具体实施方式
以下，参照附图，对本发明的1个实施方式进行说明。
图1示出了作为第1构件101和第2构件103的2个构件通过在与2个构件的界面处分别具有第1界面层105和第2界面层106的接合材料层109进行接合而得的安装结构体100。
(第1构件101、第2构件103)
第1构件101在与第2构件103相对的表面具有第1被接合材料102。对第1构件101而言，只要能在与第2构件103相对的表面设置被接合材料，就可以使用任何材料，例如可以使用Si、SiC、GaN、GaAs、陶瓷等，但并不限定于此。第2构件103在与第1构件101相对的表面具有第2被接合材料104。因此，第1被接合材料102与第2被接合材料104以相对的方式设置。对第2构件103而言，只要能在与第1构件101相对的表面设置被接合材料，就可以使用任何材料，例如可以使用Cu板、Al板等，但并不限定于此。
对第1被接合材料102和第2被接合材料104而言，可以使用能够因接合时的加热和按压而与接合材料层109所含的元素形成化合物、并且能够形成包含在接合材料层109的表面形成的化合物的界面层的任意材料。所使用的材料根据接合材料层109所含的元素可以是各种各样，例如可以使用Ni、Cu等。第1被接合材料102和第2被接合材料104的表面分别被接合时形成的第1界面层105和第2界面层106所覆盖。
(第1界面层105、第2界面层106)
第1界面层105和第2界面层106是指由于接合时的加热和压力，在接合材料层109与2个构件101、103的2个界面处，第1被接合材料102和第2被接合材料104与接合材料层109所含的元素形成的化合物的层。第1界面层105和第2界面层106具有相同的晶体结构，经由接合材料层109而相互接合。形成第1界面层105和第2界面层106的化合物根据被接合材料所使用的材料和接合材料层所含的元素可以是各种各样，例如可以是(Cu，Ni)65n5等。
(接合材料层109)
接合材料层109可以具有以下结构：包含第1金属间化合物107和应力缓和物108，进而任选地，具有与第1界面层105和第2界面层106不同的晶体结构的第2金属间化合物110分散于内部。
第1金属间化合物107是具有球状、柱状和椭球状中的任一种形状，并且具有与第1界面层105和第2界面层106相同的晶体结构的任意化合物。
第1金属间化合物107通过具有与第1界面层105和第2界面层106相同的晶体结构，能够将第1界面层105和第2界面层106以图1所示的方式进行连接。在本说明书中，将这样通过第1金属间化合物107连接第1界面层105和第2界面层106的状态称为第1界面层105和第2界面层106之间“闭塞”。这样，通过第1界面层105和第2界面层106之间的一部分被具有相同的晶体结构的任意化合物闭塞，由此能够使应力容易集中的接合材料层109与界面层105、106的界面附近的应力分散，抑制龟裂的发展。
在本说明书中，“晶体结构”是指：在第1金属间化合物107与第1界面层105和第2界面层106之间，由完全相同的化合物形成因而共同的合金粒子的形状。在本说明书中，“球状”的晶体结构是指：不限于真正的球体，还包括晶体结构所具有的最小直径为最大直径的90％以上的大致球体。在本说明书中，“柱状”的晶体结构是指：晶体结构具有长轴和短轴，短轴尺寸相对于长轴尺寸的比为1/2以下的形状。在本说明书中，“椭球状”的晶体结构是指：晶体结构所具有的最小直径为最大直径的50％以上且90％以下的椭球体。
第1金属间化合物107具有球状、柱状和椭球状中的任一种形状，因此是牢固的。因此，闭塞的部分难以因热应力而发生变形，能够防止接合材料层109所产生的热应力向应力缓和物108集中，能够抑制接合材料层109中的龟裂的发展。
第1金属间化合物107根据形成接合材料层109的化合物可以是各种各样，例如可以是(Cu，Ni)6Sn5等。由于这些化合物的弹性模量高，因此闭塞的部分因为由这些化合物形成而难以变形，即使在接合材料层109中产生了龟裂，也难以对该龟裂施加应力，因此能够更有效地抑制龟裂的发展。
应力缓和物108如图1所示那样地填充第1金属间化合物107的周围，并且以Sn为主成分。应力缓和物108通过以如图1所示地填埋第1金属间化合物107彼此之间的空隙的方式填充于第1金属间化合物的周围，由此能够形成不包含能成为龟裂的发生源的空隙的接合材料层109，能够抑制接合材料层109中的龟裂的发生。
应力缓和物108以Sn为主成分，因此与具有球状、柱状和椭球状中的任一种形状因而是牢固的第1金属间化合物107相比，具有弹性模量小、延展性优异的性质，由此，能够有效地抑制应力缓和物108中的龟裂的发展。
应力缓和物108可以包含Sn、以及选自Co和Ge中的任一者。应力缓和物108通过包含Sn、以及选自Co和Ge中的任一者，能够有效地抑制龟裂的发展。
此外，Co和Ge还具有抑制界面层形成时被接合材料被侵蚀(喰われ)的效果。
应力缓和物108可以包含Sn、以及选自In和Bi中的任一者。应力缓和物108通过包含Sn、以及选自In和Bi中的任一者，能够更有效地抑制龟裂的发展。
此外，In还具有提高应力缓和物的强度和缓和特性的效果，Bi还具有提高应力缓和物的强度的效果。
接合材料层109中也可包含具有与第1界面层105和第2界面层106不同的晶体结构的第2金属间化合物110。第2金属间化合物110可以是具有与第1界面层105和第2界面层106不同的晶体结构的任意化合物，例如可以是Ag3Sn、Ag2In等，但并不限定于此。
实施例
为了确认本发明的效果，关于上述实施方式，制作具有10mm2、15mm2的大面积的接合的安装结构体，进行验证。在此，第1构件101使用了背面具有作为第1被接合材料102的镀Ni的15mm2的Si芯片。另外，第2构件103使用了背面具有作为第2被接合材料104的镀Ni的Cu板。安装结构体按以下的步骤进行制作。
首先，在作为第2构件103的Cu板上涂布焊剂，并在其上供给形成接合材料层109的焊接材料的箔。此外，在焊接材料的箔上涂布焊剂，并在其上装载作为第1构件101的Si芯片。将其加热至280℃，使焊接材料熔融。在熔融的状态下，通过从Si芯片上方施加向下的力来进行挤压，以接合后的Cu板与Si芯片之间的层厚为100μm的方式进行调节，以冷却速度5℃/sec冷却至100℃，然后以自然冷却的方式冷却至室温，由此完成接合。所用的焊接材料的种类以实施例1～7和比较例1～3的形式示于表1。表1中，“bal.”是指剩余部分。
对于制作的安装结构体，使用超声成像装置(Scanning Acoustic Tomograph，SAT)进行初始的空隙的状态确认。观察结果一并记于表1，将空隙为20％以下的情况判定为○，将大于20％的情况判定为×。此外，使用扫描电子显微镜(Scanning ElectronMicoroscope，SEM)和能量色散X射线分析(Energy dispersive X-ray spectrometry，EDX)通过截面观察来鉴定第1界面层105、第2界面层106和第1金属间化合物107的组成、以及如果存在时第2金属间化合物110的组成，并确认界面层105，106间的第1金属间化合物107的闭塞状态。结果一并记于表1。对于界面层105、106的闭塞，在第1界面层105和第2界面层106之间在截面观察中被第1金属间化合物107闭塞一部分的情况记为○，无法确认闭塞的情况记为×，被第2金属间化合物110闭塞的情况记为△。
在确认初始的状态后，实施低温侧为-40℃、高温侧为125℃的反复温度循环试验。进行在上限和下限的温度下各保持5分钟的500次循环的液槽式温度循环试验，结束后再次通过SAT进行龟裂观察。观察结果一并记于表1。为了判定是否能够确保龟裂发展后的接合，将10mm2、15mm2的接合部109的任意截面中、龟裂面积相对于截面积的比例(龟裂的面积率)均为1/3以下的情况判定为◎，将10mm2、15mm2中的任一者的龟裂的面积率为大于1/3且1/2以下的情况判定为○，将10mm2、15mm2的龟裂的面积率均大于整体的1/2的情况判定为×。
[表1]
在实施例1～7和比较例1～3中，均未观察到初始的大的空隙。这是因为：接合材料层109中的第1金属间化合物107不是由被接合材料102、104的固体Cu与焊接材料的Sn的反应而生成，而是在焊接材料的熔融-凝固时由焊接材料所含的Cu与Sn的反应而生成。
在实施例1～7和比较例1～3中，焊接材料均包含Cu和Ni，第1界面层105、第2界面层106和第1金属间化合物107均包含(Cu，Ni)65n5。在实施例1～7中，Cu的含有率较大，因此第1金属间化合物107的(Cu，Ni)6Sn5大量存在，且至少一部分闭塞。
实施例3、比较例2的焊接材料所含的Ag以第2金属间化合物110的Ag3Sn的形式存在，分散于接合材层109中。
另一方面，在比较例1、2中，Cu的含有率小，因此第1金属间化合物107的(Cu，Ni)6Sn5少，无法确认闭塞。另外，在比较例3中，Ag的含有率大，因此Ag3Sn以第2金属间化合物110的形式大量存在，形成闭塞结构。
另外，实施例4～7的焊接材料所含的除Cu、Ni外的其他元素没有以第1金属间化合物107的形式存在，In、Bi固溶于应力缓和物108，Co、Ge为微量因此未被观测到，但认为包含于第1界面层105、第2界面层106、应力缓和物108中的任一者中。
在实施例1～7中，均未观察到大的龟裂，判定为◎或○。另一方面，在比较例1～3中龟裂大。在比较例1、2中，龟裂在作为应力缓和物108的Sn层内传播。认为这是因为：第1金属间化合物107不具有闭塞结构，因此无法耐受热应力，负荷集中于应力缓和物108内。在比较例3中，龟裂在第2界面层106和第1金属间化合物107之间、以及在第2界面层106和应力缓和物108之间的界面传播。认为这是因为：第2界面层106与第1金属间化合物107的晶体结构不同，因此负荷集中于物性不同的界面。
由上述实施例的结果可知，以下事项是用于体现本发明的安装结构体的效果的合适的条件：
在2个构件通过在与2个构件的界面处分别具有第1界面层和第2界面层的接合材料层进行接合而得的安装结构体中，
接合材料层以包含第1金属间化合物和应力缓和物、并且任选地包含第2金属间化合物的层的方式构成，
第1金属间化合物具有与第1界面层和第2界面层相同的晶体结构，并且闭塞第1界面层和第2界面层之间的一部分，
应力缓和物填充第1金属间化合物的周围并以Sn为主成分。
此外，为了体现本发明的安装结构体的效果，第1金属间化合物具有球状、柱状和椭球状中的任一种形状，第2金属间化合物具有与第1界面层105和第2界面层106不同的晶体结构、并分散于接合材料层109的内部也是合适的条件。
产业上的可利用性
根据本发明的安装结构体，在功率器件和LED等伴有大的发热的设备中，能够提供大面积的接合的散热特性优异的安装结构体，能够有助于设备性能的提高。

Claims (6)

1.一种安装结构体，是2个构件通过在与所述2个构件的界面处分别具有第1界面层和第2界面层的接合材料层进行接合而得的安装结构体，其中
所述接合材料层包含第1金属间化合物和应力缓和物，
所述第1金属间化合物具有球状、柱状和椭球状中的任一种形状并具有与所述第1界面层和所述第2界面层相同的晶体结构，并且所述第1金属间化合物闭塞所述第1界面层和所述第2界面层之间的一部分，
所述应力缓和物填充所述第1金属间化合物的周围并以Sn为主成分。
2.如权利要求1所述的安装结构体，其中，具有与所述第1界面层和所述第2界面层不同的晶体结构的第2金属间化合物分散于所述接合材料层。
3.如权利要求1或2所述的安装结构体，其中，所述第1界面层、所述第2界面层和所述第1金属间化合物为(Cu，Ni)6Sn5。
4.如权利要求1～3中任一项所述的安装结构体，其中，所述应力缓和物包含Sn、以及In或Bi。
5.如权利要求1～3中任一项所述的安装结构体，其中，所述应力缓和物包含Sn、以及Co或Ge。
6.如权利要求2～5中任一项所述的安装结构体，其中，所述第2金属间化合物为Ag3Sn。
CN201710967563.1A 2016-12-08 2017-10-17 安装结构体 Pending CN108172559A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-238751 2016-12-08
JP2016238751A JP6621068B2 (ja) 2016-12-08 2016-12-08 実装構造体

Publications (1)

Publication Number Publication Date
CN108172559A true CN108172559A (zh) 2018-06-15

Family

ID=62489720

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710967563.1A Pending CN108172559A (zh) 2016-12-08 2017-10-17 安装结构体

Country Status (3)

Country Link
US (1) US10170442B2 (zh)
JP (1) JP6621068B2 (zh)
CN (1) CN108172559A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159219A1 (ja) * 2018-02-13 2019-08-22 三菱マテリアル株式会社 銅／チタン／アルミニウム接合体、絶縁回路基板、ヒートシンク付き絶縁回路基板、パワーモジュール、ｌｅｄモジュール、熱電モジュール
US10790262B2 (en) * 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
JP7310482B2 (ja) * 2019-03-14 2023-07-19 株式会社豊田自動織機 接合構造及び液相拡散接合方法
KR102325114B1 (ko) * 2019-12-06 2021-11-11 제엠제코(주) 반도체 패키지의 제조 방법
WO2022091988A1 (ja) 2020-10-29 2022-05-05 田中貴金属工業株式会社 接合構造及び該接合構造を有する半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958298A (zh) * 2009-07-16 2011-01-26 瑞萨电子株式会社 半导体器件及其制造方法
CN103155127A (zh) * 2010-10-22 2013-06-12 松下电器产业株式会社 半导体接合结构体和半导体接合结构体的制造方法
CN103168392A (zh) * 2011-02-09 2013-06-19 株式会社村田制作所 连接结构
CN103167926A (zh) * 2010-12-24 2013-06-19 株式会社村田制作所 接合方法、接合结构、电子装置、电子装置的制造方法及电子部件
CN103493190A (zh) * 2011-12-27 2014-01-01 松下电器产业株式会社 接合结构体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009051181A1 (ja) 2007-10-19 2009-04-23 Nihon Superior Sha Co., Ltd. 無鉛はんだ合金
JP5598592B2 (ja) 2012-12-25 2014-10-01 三菱マテリアル株式会社 パワーモジュール
US9320152B2 (en) 2013-05-29 2016-04-19 Nippon Steel & Sumikin Materials Co., Ltd. Solder ball and electronic member
WO2015079844A1 (ja) 2013-11-29 2015-06-04 株式会社村田製作所 金属間化合物の生成方法および金属間化合物を用いた接続対象物の接続方法
JP6380539B2 (ja) * 2014-08-22 2018-08-29 株式会社豊田自動織機 接合構造、接合材、及び接合方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958298A (zh) * 2009-07-16 2011-01-26 瑞萨电子株式会社 半导体器件及其制造方法
CN103155127A (zh) * 2010-10-22 2013-06-12 松下电器产业株式会社 半导体接合结构体和半导体接合结构体的制造方法
CN103167926A (zh) * 2010-12-24 2013-06-19 株式会社村田制作所 接合方法、接合结构、电子装置、电子装置的制造方法及电子部件
CN103168392A (zh) * 2011-02-09 2013-06-19 株式会社村田制作所 连接结构
CN103493190A (zh) * 2011-12-27 2014-01-01 松下电器产业株式会社 接合结构体

Also Published As

Publication number Publication date
US20180166411A1 (en) 2018-06-14
JP6621068B2 (ja) 2019-12-18
JP2018098265A (ja) 2018-06-21
US10170442B2 (en) 2019-01-01

Similar Documents

Publication Publication Date Title
CN108172559A (zh) 安装结构体
Shen et al. Research advances in nano-composite solders
Li et al. Characteristics of intermetallics and micromechanical properties during thermal ageing of Sn–Ag–Cu flip-chip solder interconnects
US7776651B2 (en) Method for compensating for CTE mismatch using phase change lead-free super plastic solders
TWI505899B (zh) A bonding method, a bonding structure, and a method for manufacturing the same
WO2006028668A1 (en) Tin/indium lead-free solders for low stress chip attachment
CN107427968A (zh) 半导体装置用软钎焊材料
Chen et al. Isothermal aging effects on the microstructure and solder bump shear strength of eutectic Sn37Pb and Sn3. 5Ag solders
Wang et al. Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect
US20240021565A1 (en) Solder material and method for die attachment
JP5050440B2 (ja) 半導体装置及びその製造方法
CN108857133A (zh) 安装构造体
JP5904257B2 (ja) パワーモジュール用基板の製造方法
Wang et al. Silver flip-chip technology by solid-state bonding
JP6724979B2 (ja) 接合体
Lis et al. Reliability and Temperature Resistance of Solder–Metallic Mesh Composite Joints
JP2014147966A (ja) 接合材料、接合方法、接合構造、および半導体装置
JP6017351B2 (ja) 鉛フリー接合材料
JP4779710B2 (ja) 接合方法およびこれを用いたインバータ
JP2018022738A (ja) 絶縁基板の製造方法及び絶縁基板
JP6038270B1 (ja) 電子装置
TW202315954A (zh) 焊料合金、焊錫球、預成型錫片、焊錫膏及焊接點
JP2021072409A (ja) 半導体装置
JP2000164775A (ja) 接合材料とその製造方法
Wang et al. Effect of displacement rate on lap shear test of SAC solder ball joints

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180615

WD01 Invention patent application deemed withdrawn after publication