CN103155127A - 半导体接合结构体和半导体接合结构体的制造方法 - Google Patents

半导体接合结构体和半导体接合结构体的制造方法 Download PDF

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CN103155127A
CN103155127A CN2011800494063A CN201180049406A CN103155127A CN 103155127 A CN103155127 A CN 103155127A CN 2011800494063 A CN2011800494063 A CN 2011800494063A CN 201180049406 A CN201180049406 A CN 201180049406A CN 103155127 A CN103155127 A CN 103155127A
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interphase
layer
electrode
semiconductor
metal film
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CN103155127B (zh
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中村太一
古泽彰男
酒谷茂昭
北浦秀敏
石丸幸宏
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Panasonic Intellectual Property Management Co Ltd
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Matsushita Electric Industrial Co Ltd
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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Abstract

提供一种具有优异的应力缓和性，同时具有耐热性的半导体接合结构体，它是通过焊锡材料将半导体元件(102)和电极(103)接合而成的接合结构体。接合部分(212)具有形成在电极侧的第一金属互化物层(207‘)、形成在半导体元件侧的第二金属互化物层(208‘)以及被第一金属互化物层(207‘)和第二金属互化物层(208‘)的二层夹在中间的由含有Sn的相(210)和棒状金属互化物部(209‘)构成的第三层(300)，棒状金属互化物部(209‘)与第一金属互化物层(207‘)和第二金属互化物层(208‘)的两者层间接合。

Description

半导体接合结构体和半导体接合结构体的制造方法
技术领域
本发明涉及半导体部件的内部接合，特别涉及以Sn类焊锡将要求具有优异的机械特性和耐热性的功率半导体模块的半导体元件和电极接合的半导体接合结构体等。
背景技术
在电子安装领域中，因对铅的有害性的担忧和对环境关心的增强，期望不用铅的接合，所以正在开发能替代作为通常的焊锡材料的Sn-Pb共晶焊锡的材料并将该材料实用化。
另一方面，正在对作为半导体部件内部的接合材料的高温铅焊锡的替代材料进行探讨。
作为替代高温铅焊锡的后补材料，可以是Au类、Bi类、Zn类、Sn类的焊锡材料。关于Au类的焊锡材料，例如熔点为280℃的Au-20Sn等被一部分实用化了，但是因为其主成分为金，所以材料物性硬，材料成本高，用于小型部件受到限制等，所以没有通用性。
熔点为270℃左右的Bi，虽然熔融温度方面没有问题，但是其延伸性和导热率差。另外，Zn类焊锡因弹性率过高，所以在半导体部件的内部接合时存在机械特性和耐热性的问题。
另外，关于Sn类的焊锡材料，虽然具有优异的机械特性，但是其熔点不到250℃，较低，缺乏耐热性，因此为了提高Sn类的耐热性，正在探讨例如通过形成CuSn化合物，进行金属互化物化以提高熔点的接合材料(参考专利文献1)。
图6是专利文献1所记载的现有的接合结构体的剖视图。在图6中，功率半导体模块501具有在功率半导体元件502和电极503之间的接合部504。该接合部504使用CuSn化合物作为接合材料。
专利文献1：日本专利特开2007－273982。
发明内容
但是，专利文献1的CuSn化合物的接合材料，在使用Sn和Cu的混合粉末作为焊锡材料，花充分时间进行接合时，则如图7所示那样，虽然因Sn和Cu的金属互化物化，接合部504对功率半导体模块安装在基板上时所产生的热具有耐热性，即，具有在通常的回流温度(日文:リフロー温度)260℃的气氛下的耐热性，但是在使用功率半导体模块时接合部504可能会产生开裂和剥离等。
这被认为是接合部504的大部分因Sn和Cu的金属互化物化而导致接合部504的延伸性消失，受到功率半导体模块使用时所产生的热应力的作用但不能缓和该应力的缘故。
另一方面，如果不花充分时间进行接合时，则如图8所示，Sn和Cu没有完全金属互化物化，Sn的部分有较大量残存，虽然确保了接合部的延伸性，但是失去了接合部对功率半导体模块501安装在基板上时所产生的热的耐热性，即，失去了在通常的回流温度260℃的气氛下的耐热性。
这被认为是Sn和Cu没有完全金属互化物化，Sn残留，例如Sn以层状残存的情况下，回流时再熔融，可能会产生半导体元件和电极错位等不良现象的缘故。另外，虽然生成了金属互化物，但是球状的金属互化物量少且离散地分散着。
因此，由所述专利文献1的接合材料所制得的接合结构体存在要兼顾应力缓和性和耐热性两者的课题。
考虑到现有的所述课题，本发明的目的是提供一种兼顾耐热性和应力缓和性的半导体接合结构体等。
第一发明是一种半导体接合结构体，该半导体接合结构体是在基板电极上依次积层含有Sn的第一金属互化物层、由含有Sn的第三金属互化物部和含有Sn的相构成的第三层、以及含有Sn的第二金属互化物层，然后载置半导体元件的电极而形成的半导体接合结构体；
所述第一金属互化物层和所述第二金属互化物层具有以所述第三金属互化物部进行层间接合的一部分。
第二发明是第一发明的半导体接合结构体，所述第三金属互化物部呈现棒状的形态。
第三发明是第一发明的半导体接合结构体，所述第一金属互化物层是由Cu-Sn构成的金属互化物构成；
所述第二金属互化物层是由Cu-Sn构成的金属互化物构成；
所述第三金属互化物部是由Au-Sn或Ag-Sn构成的金属互化物构成；
所述含有Sn的相是含有Au或Ag的构成。
第四发明是第一发明的半导体接合结构体，所述第一金属互化物层是由Ag-Sn构成的金属互化物构成；
所述第二金属互化物层是由Ag-Sn构成的金属互化物构成；
所述第三金属互化物部是由Au-Sn构成的金属互化物构成；
所述含有Sn的相是含有Au或Ag的构成。
第五发明是一种半导体接合结构体的制造方法，包括
半导体元件表面的金属膜形成工序：在半导体元件的电极表面形成金属膜，该金属膜是与Sn形成金属互化物的金属膜；
电极表面的金属膜形成工序：在基板电极表面形成金属膜，该金属膜是与Sn形成金属互化物的金属膜；
接合工序：在使形成有所述金属膜的半导体元件的电极面和形成有所述金属膜的基板电极的面相对，以含有Sn的焊锡材料将相对的面之间进行接合时，通过所述含有Sn的焊锡材料所形成的第三金属互化物部将形成在所述基板电极的面上的第一金属互化物层和形成在所述半导体元件的电极面上的第二金属互化物层进行一部分层间接合。
第六发明是第五发明的半导体接合结构体的制造方法，形成在所述半导体元件的表面的金属膜的材料为Ag和/或Cu；
形成在所述电极的表面的金属膜的材料为Au和/或Ag；
所述含有Sn的焊锡材料为Sn－3wt%Ag－0.5wt%Cu。
发明的效果
如上所述，通过本发明能确保对功率半导体模块使用时温度循环所产生的热应力的应力缓和性，同时还能确保接合部对功率半导体模块安装在基板上时所产生的热的耐热性，通过兼顾应力缓和性和耐热性的两者，以高品质将半导体元件和电极接合，可提高接合可靠性。
附图说明
图1是本发明实施方式中的功率半导体模块的剖视图。
图2是本发明实施方式中的实施例1的接合结构体的制造工序流程图。
图3是说明本发明实施方式中的实施例1的接合结构体的制造工序的剖视图。
图4是以将材料概括化的用语来说明本发明实施方式中的图3的接合结构体的图。
图5是本发明实施方式中的实施例1的接合结构体的制造工序流程图。
图6是现有的功率半导体模块中的接合结构体的剖视图。
图7是显示了现有的功率半导体模块的制造工序中的接合加热时间足够长的情况下的功率半导体模块的剖视图。
图8是显示了现有的功率半导体模块的制造工序中的接合加热时间短的情况下的功率半导体模块的剖视图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。
图1是本发明实施方式中的功率半导体模块100的剖视图。
半导体元件102通过接合材料104与基板电极103(以后简称为电极103)接合，形成接合结构体105，该接合结构体105被安装在基板101上。
接着，对所形成的接合结构体105进行详细说明。
图2是本发明实施方式中实施例1的接合结构体的制造工序流程图。
图2(a)是将焊锡材料203供给至电极103的工序图。
这里所用的由Cu合金构成的电极103上通过电镀法预先形成厚度3μm的Ag层202以及在所述的Ag层202上成膜有厚度3μm的Au层201。
在供给焊锡材料203时，使用在含有氢5％的氮气氛中加热到260℃状态的电极103。
在该Au层201上供给长度500－800μm、直径φ1.0mm的线状的Sn－3wt%Ag－0.5wt%Cu(以后简称为Sn－3Ag－0.5Cu)(熔点为217℃)的焊锡材料203。
然后，在焊锡材料203上载置半导体元件102。
图2(b)是在焊锡材料203上载置半导体元件102的工序图。
这里所用的由GaN构成的厚度为0.3mm和大小为4mm×5mm的半导体元件102上通过电镀法预先形成厚度10μm的Cu层206以及在所述的Cu层206上成膜有厚度5μm的Ag层205。
在载置半导体元件102时，与所述焊锡材料203的供给工序同样，使用在含有氢5％的氮气氛中加热到260℃状态的电极103。
为了将该Ag层205与焊锡材料203接合，以50gf－150fg左右的负荷将半导体元件102载置在供给至电极103的焊锡材料203上。
然后，直接使用在含有氢5％的氮气氛中加热到260℃状态的电极103，将半导体元件102载置在焊锡材料203上后放置约10分钟后，通过自然冷却，形成使电极103和半导体元件102接合的接合部212，制得了接合结构体105。
这里就使电极103和半导体元件102接合的接合部212进行说明。图3(a)是刚将半导体元件102载置在供给至电极103上的焊锡材料203上之后的示意图。
通过图2(b)所示的Ag层205与焊锡材料203之间的扩散反应，以及Au层201和Ag层202与焊锡材料203之间的扩散反应，如图3(a)所示，开始形成棒状AgSn金属互化物部209和棒状AuSn金属互化物部209混在的棒状金属互化物部209(对应于后叙的第三金属互化物部的一例)。
这里所说的棒状是指成核的结晶生长，纵横比不同的柱状。
同时，一边形成所述的棒状金属互化物部209，一边发生图2(b)所示的Cu层206与焊锡材料203之间的扩散反应，开始形成如图3(a)所示的CuSn金属互化物层208(对应于后叙的第二金属互化物层的一例)以及CuSn金属互化物层207(对应于后叙的第一金属互化物层的一例)。
图3(b)是从图3(a)开始放置了10分钟的示意图。
通过在260℃加热的状态下放置10分钟，图3(a)所形成的棒状AgSn金属互化物部209和棒状AuSn金属互化物部209混在的棒状金属互化物部209、CuSn金属互化物层208和CuSn金属互化物层207生长。
作为图2(c)的详细图的图3(c)是使图3(b)自然冷却，完成接合结构体的示意图。
在接合部212中，图3(b)状态下所形成的棒状AgSn金属互化物部209和棒状AuSn金属互化物部209混在的棒状金属互化物部209以及作为Sn/Au/Ag混在组织的应力吸收部的含有Sn的相210被CuSn金属互化物层208和CuSn金属互化物层207夹在中间，棒状AgSn金属互化物部209和棒状AuSn金属互化物部209再以与上下的CuSn金属互化物层208和CuSn金属互化物层207层间接合的状态进行凝固。
通过以上结构，电极103和半导体元件102被接合部212接合，而该接合部212即是棒状AgSn金属互化物部209和棒状AuSn金属互化物部209混在的棒状金属互化物部209以及作为Sn/Au/Ag混在组织的应力吸收部的含有Sn的相210被CuSn金属互化物层208和CuSn金属互化物层207夹在中间，棒状AgSn金属互化物部209和棒状AuSn金属互化物部209再以与上下的CuSn金属互化物层208和CuSn金属互化物层207层间接合的状态凝固而成的接合部212。
图4是使用将材料概括化(上位概念化)的用语对图3的接合状态进行说明的图。这里的第一金属互化物层207‘是所述CuSn金属互化物层207的概括，第二金属互化物层208‘是所述CuSn金属互化物层208的概括。另外，棒状金属互化物部209‘是所述棒状AgSn金属互化物部209和棒状AuSn金属互化物部209的概括，是本发明的第三金属互化物部的一例。
由作为该第三金属互化物部的一例的棒状金属互化物部209和含有Sn的相210构成了本发明的第三层300。作为该第三金属互化物部的其他例，可以为柱状或针状等的金属互化物部。
使用经过所述工序(实施例1的接合时间为10分钟的情况)所完成的接合结构体，实施引线接合和密封，形成功率半导体模块，因能确认接合结构体的接合部的开裂和剥离的情况，所以可确认制品的成品率。
制品成品率的确认方法是将低温侧为－45℃，高温侧为125℃的温度循环试验循环进行300次后，利用超声波图像来观察制品，以判定接合结构体的接合部的开裂和剥离，算出开裂和剥离相对于接合部的表面积的比例不到20％时的制品成品率(N数＝20)。
制品成品率的判定为：以将80％以上定为○，将50％以上且不到80％的定为△，将不到50％定为×进行区别，将80％以上（○）定为优质品。
因为经所述工序所完成的接合结构体的功率半导体模块的制品成品率为100％，所以为○，判定为优质品。
由此未确认到接合部的开裂和剥离。
该功率半导体模块中的接合结构体的接合部没有产生开裂和剥离的理由被推测如下：
被认为是在接合结构体的接合部212中存在具有比金属互化物强的延伸性的Sn/Au/Ag混在组织，对温度循环试验所产生的热应力，Sn/Au/Ag的混在组织会产生变形，显现出应力缓和性的缘故。
再者，在确认将接合结构体作为功率半导体模块使用时的耐热性的过程中，在设定回流温度为260℃的气氛下，来自接合结构体的半导体元件和电极的剪切方向的接合强度为30gf以上。这被推测是通过CuSn金属互化物层207、CuSn金属互化物层208以及棒状AgSn金属互化物部209和棒状AuSn金属互化物部209的形成，金属互化物层和棒状金属互化物部连接(层间接合)，具有260℃的耐热性的缘故。
这里的CuSn金属互化物层207和208的熔点都约为415℃，棒状AuSn金属互化物部209和棒状AgSn金属互化物部209的熔点分别约为260℃和480℃，这些都在260℃以上，所以可以说通过金属互化物层和棒状金属互化物部连接就具有260℃的耐热性。
通过相关的构成，即通过棒状AgSn金属互化物部209和棒状AuSn金属互化物部209混在的棒状金属互化物部209以及作为Sn/Au/Ag混在组织的应力吸收部的含有Sn的相210被CuSn金属互化物层208和CuSn金属互化物层207夹在中间，棒状AgSn金属互化物部209和棒状AuSn金属互化物部209再以与上下的CuSn金属互化物层208和CuSn金属互化物层207层间接合的状态凝固而成的接合部212，将半导体元件和电极进行接合，就能同时确保现有技术不能获得的对温度循环所产生的热应力的应力缓和性和接合部对功率半导体模块被安装在基板时所产生的热具有耐热性，藉此能够以高品质将半导体元件和电极进行接合，提高接合可靠性。
由此可以说本发明的实施方式中的接合结构体解决了以往的问题。
接下来，使电极和半导体元件上预先成膜的层的材料构成和厚度进行变化并确认应力缓和性和耐热性。
这里，如下所述确定各层的名称并对其进行说明。如图5所示，从与电极的面接触开始将通过电镀法在电极上成膜的膜的名称定为电极表面第二处理层402和电极表面第一处理层401。然后，从与元件的面接触开始将通过电镀法在半导体元件上成膜的膜的名称定为元件表面第二处理层406和元件表面第一处理层405。变化膜的构成和厚度形成接合部。表1显示了在本发明实施方式中探讨过的构成的实施例。
表1
Figure BDA00003041697400081
在实施例1－9中，焊锡材料是Sn-3Ag-0.5Cu
在现有例中，焊锡材料是Sn和Cu的混合粉末
表1的纵轴表示电极上成膜的膜的构成和厚度，横轴表示半导体元件上成膜的膜的构成和厚度。
例如，在实施例1中，通过焊锡材料将电极和半导体元件接合，形成接合部，其中的电极为2层成膜的电极，即为从与电极的面接触开始的Ag3μm的电极表面第二处理层402以及Au3μm的电极表面第一处理层401成膜的电极。其中的半导体元件是从与半导体元件的面接触开始的Cu10μm的元件表面第二处理层406以及Ag5μm的元件表面第一处理层405成膜的半导体元件。
另外，接合用的焊锡材料在实施例中使用Sn－3Ag－0.5Cu，在现有例中使用Sn和Cu的混合粉末。
接着，表2是对表1的各实施例1－9所获得的接合结构体的接合部的组成进行归纳的表格。现有例的情况下，接合的加热时间为60分钟。实施例1－9的情况下，接合的加热时间为10－60分钟。
表2
Figure BDA00003041697400091
使用EDX(能量分散型荧光X射线分析)装置分析了表2中的各实施例和现有例的接合部的组成。
但是，通过采用现有技术的Sn和Cu混合粉末，现有例的接合部具有仅以CuSn化合物形成的构成。
表3显示了接合结构体的制品的成品率和耐热性，这些接合结构体是使用表1的各实施例1－9的电极和半导体元件，且使半导体元件载置在供给了焊锡材料的电极上之后到自然冷却开始为止的时间分别变化为10分钟、20分钟、30分钟、60分钟的接合结构体。
表3
Figure BDA00003041697400101
对于制品成品率，使用表1的各实施例1－9所得的接合结构体实施引线接合和密封，形成功率半导体模块，因能确认接合结构体的接合部的开裂和剥离的情况，所以可确认制品的成品率。
制品成品率的确认方法是将低温侧为－45℃，高温侧为125℃的温度循环试验进行循环300次后，使用超声波图像来观察制品，以判定接合结构体的接合部的开裂和剥离，算出开裂和剥离相对于接合部的表面积的比例不到20％时的制品成品率(N数＝20)。
制品成品率的判定为：以将80％以上定为○，将50％以上且不到80％的定为△，将不到50％定为×进行区别，将80％以上（○）定为优质品。
再者，对于耐热性，因将接合结构体作为功率半导体模块使用，所以确认了设定回流温度为260℃的耐热性。
对于260℃的耐热性，在260℃的气氛下，如果来自接合结构体的半导体元件和电极的剪切方向的接合强度变为30gf以上，就判定为具有260℃的耐热性。
即，在260℃的气氛下，如果接合强度为30gf以上的话，棒状金属互化物部209‘与第一金属互化物层207‘和第二金属互化物层208‘的两者接触，进行层间接合，被推定为具有260℃的耐热性。
通过表3的结果可知，对于制品成品率，接合时间为10－20分钟的实施例1－9和现有例都被判定为○，为优质品。接合时间为30分钟的实施例3、6、7－9被判定为○，为优质品。接合时间为60分钟的实施例1－9和现有例都被判定为×，所以接合时间越长，开裂和剥离的发生程度增加。
用本发明的实施方式中的实施例的接合结构体进行工程时间30分钟，一部分的制品成品率被判定为△，进行60分钟时，全部的制品成品率被判定为×，关于此现象被认为是通过延续工程时间，金属互化物层和棒状金属互化物过度生长，由Sn和Au或Ag形成的含有Sn的相不再存在，对温度循环试验所产生的热应力的应力缓和性也消失。
再者，从表3的结果可知，关于260℃的耐热性，接合时间为10分钟时仅实施例1为OK，接合时间为20分钟时实施例1、2、4、5、7、8为良判定，接合时间为30分钟时实施例1－9为良判定，接合时间为60分钟时实施例1－9和现有例都为良判定，接合时间增长，耐热性则增加。其原因是棒状金属互化物部209‘与第一金属互化物层207‘和第二金属互化物层208‘的两者接触，连接程度增加的缘故。
从以上结果可知，从同时兼顾具有应力缓和性的制品成品率判定○和具有耐热性的260℃耐热性良判定的两者的区域来看，实施例1为接合时间10分钟和20分钟的区域，实施例2为接合时间20分钟的区域。实施例3为30分钟，实施例4为20分钟，实施例5为20分钟，实施例6为30分钟，实施例7为20－30分钟，实施例8为20－30分钟，实施例9为30分钟。
对此，可看出现有例不存在同时兼顾制品成品率和260℃耐热性的确保都为良判定的区域。
其原因被认为是如下的缘故，即关于使用现有例的确保260℃的耐热性的接合结构体进行30分钟和60分钟接合，接合结构体的制品成品率为△和×的判定的现象，被认为是仅以延伸性低的脆弱的CuSn金属互化物部进行接合，不能得到对温度循环试验所产生的热应力的应力缓和性，接合结构体的接合部发生开裂和剥离的缘故。
对此，本发明的实施方式的实施例的接合结构体被认为是存在具有比金属互化物强的延伸性的含Sn的相，对温度循环试验所产生的热应力通过含Sn的相变形而产生应力缓和性，并且通过棒状金属互化物部209‘与第一金属互化物层207‘和第二金属互化物层208‘的两者接触进行连接以实现260℃的耐热性，能够兼顾应力缓和性和耐热性的两者的缘故。
由此，通过本发明实施方式就能确保兼顾温度循环试验的制品成品率和260℃耐热性的良判定的区域。
在本发明的实施方式中，在半导体元件102和接合部212的边界部分以及基板电极103和接合部212的边界部分形成由CuSn化合物或者AgSn化合物构成的金属互化物层207‘和208‘，除此以外的接合部通过形成第三层300以实现应力缓和性和耐热性的两者，其中的第三层300具有AuSn化合物和AgSn化合物混在的棒状金属互化物部209‘和由Sn、Au、Ag构成的含Sn的相210。
为了实现这样的构造，例如在实施例1中，在电极表面处理层和半导体元件表面处理层的与焊锡材料接触的较近部分中配置能与焊锡材料中的Sn形成棒状金属互化物部的Au或Ag；在较远的部分中配置能与焊锡材料中的Sn形成金属互化物层的Ag或Cu。
在实施例1－9中，关于这些部分的厚度，有必要根据焊锡材料的量进行确定。
即，在本发明实施方式中，决定焊锡材料的量以使将由GaN构成的厚度为0.3mm，大小为4mm×5mm的半导体元件作为对象的接合部的厚度为25－35μm。供给长度500－800μm、直径φ1.0mm的线状的Sn－3Ag－0.5Cu(熔点：217℃)的焊锡材料203。
对于该焊锡材料的量，对于在半导体元件102与接合部212的边界部分以及电极103与接合部212的边界部分的由CuSn化合物或者AgSn化合物构成的金属互化物层207‘和208‘，为了由AuSn化合物、AgSn化合物构成的棒状金属互化物部209‘必要与半导体元件和电极连接，并且使由Sn和Au或Ag构成的含Sn的相210存在，必须确定电极表面处理层和半导体元件表面处理层的各层的厚度。
即，与Sn形成化合物的Cu、Ag、Au的供给量过多时，就会产生由Sn和Au或Ag构成的含Sn的相不存在的可能性，如果含Sn的相不存在的话，对温度循环试验所产生的热应力的应力缓和性就不存在。
再者，与Sn形成化合物的Cu、Ag、Au的供给量过少时，会出现在半导体元件102和接合部212的边界部分以及电极103和接合部212的边界部分的由CuSn化合物或者AgSn化合物构成的金属互化物层207‘和208‘不与由AuSn化合物、AgSn化合物构成的棒状金属互化物部209‘连接的可能性，如果金属互化物层207‘和208‘不与棒状金属互化物部209‘连接的话，就没有260℃的耐热性。
另外，在实施例1中，Au-Ag层的顺序也可以反过来配置。即，在实施例1中，关于电极表面处理层Au(焊锡材料侧)/Ag(电极侧)，对焊锡材料中的Sn的扩散速度，Au快于Ag，所以将先与焊锡材料接触的侧配置为Au，然后再将与Au接触的侧配置为Ag。如果以Ag(焊锡材料侧)/Au(电极侧)的层的顺序进行更换时，虽然向焊锡材料进行的Ag的扩散成为限速，到确保耐热性为止的时间有可能被推迟，但是能够确保金属互化物形成所产生的耐热性。
另一方面，关于元件表面处理层Ag(焊锡材料侧)/Cu(元件侧)，必须使AgSn化合物形成为棒状金属互化物部，使CuSn化合物形成为层状金属互化物。假设将层的顺序更换为Cu(焊锡材料侧)/Ag(元件侧)时，因层状金属互化物CuSn化合物先行形成，所以棒状金属互化物部AgSn化合物很难在焊锡材料中形成。因此元件表面处理层必须为Ag(焊锡材料侧)/Cu(元件侧)的顺序。
也可以将电极表面处理层的构成和元件表面处理层的构成进行更换。
关于接合中的温度，如上所述的260℃较好。通常锡焊温度为焊锡材料的熔点＋30℃较为理想。在本实施方式中，锡焊时因Au、Ag、Cu的元素向焊锡材料中的扩散，焊锡材料的熔融粘度上升，所以焊锡材料的润湿性下降。为此，通过将接合温度设定为高于焊锡材料的熔点约40℃(再升10℃)就能确保焊锡材料的润湿性。但过高，则会出现电极反翘的问题。
另外，关于焊锡材料，只要是无铅焊锡，可以是任意材料。通常的无铅焊锡被公知为ＳｎＡｇ类（Ｓｎ3．5Ａｇ、Ｓｎ3．5Ａｇ0．5Ｂｉ6Ｉｎ）、ＣｕＳｎ类（Ｓｎ0．7Ｃｕ0．05Ｎｉ）、ＳｎＡｇＣｕ类（Ｓｎ3Ａｇ0．5Ｃｕ）、ＳｎＢｉ类（Ｓｎ58Ｂｉ）。在本实施方式中，因为必须通过使Au、Ag、Cu的元素从半导体元件和电极侧对焊锡材料中的Sn进行扩散，形成金属互化物，并且形成含Sn的相，所以焊锡材料中的Sn的量多为好，因此，焊锡材料不仅是Ｓｎ3Ａｇ0．5Ｃｕ的无铅焊锡，还可以是Ｓｎ3．5Ａｇ、Ｓｎ3．5Ａｇ0．5Ｂｉ6Ｉｎ、Ｓｎ0．7Ｃｕ0．05Ｎｉ的无铅焊锡，也可以是Sn单体。
关于处理层的厚度，较好为3μｍ、5μｍ、10μｍ，即，对于直径φ1.0mm的线状的Sn－3Ag－0.5Cu且长度500－800μm的焊锡材料，在电极表面处理层Ag3μm和元件表面处理层Cu5μm的构成情况下(实施例9)，不仅电极表面处理层Ag和元件表面处理层Cu都全部扩散到焊锡材料中(30分钟)，还能够确保耐热性。因此，最低限度必须为电极表面处理层Ag3μm和元件表面处理层Cu5μm。另外，如实施例7那样，将电极表面处理层形成为Au3μm时，能够缩短工序时间。
产业上的利用可能性
本发明的半导体接合结构和制造方法可确保对使用功率半导体模块时的温度循环所产生的热应力的应力缓和性，同时还可确保对将功率半导体模块安装在基板上时所产生的热的接合部的耐热性，通过兼顾应力缓和性和耐热性，能够以高品质将半导体元件和电极接合，提高接合可靠性，所以适用于作为功率半导体模块。
符号说明
101基板
102半导体元件
103电极
104接合材料
105接合结构体
201Au层
202Ag层
203焊锡材料
205Ag层
206Cu层
207‘第一金属互化物层
207CuSn金属互化物层
208‘第二金属互化物层
208CuSn金属互化物层
209‘棒状金属互化物部(第三金属互化物部)
209棒状AgSn金属互化物部
209棒状AuSn金属互化物部
210含有Sn的相
212接合部
300第三层
401电极表面第一处理层
402电极表面第二处理层
405元件表面第一处理层
406元件表面第二处理层

Claims (6)

1.一种半导体接合结构体，该半导体接合结构体是在基板电极上依次积层含有Sn的第一金属互化物层、由含有Sn的第三金属互化物部和含有Sn的相构成的第三层、以及含有Sn的第二金属互化物层，然后载置半导体元件的电极而形成的半导体接合结构体；
所述第一金属互化物层和所述第二金属互化物层具有以所述第三金属互化物部进行层间接合的一部分。
2.如权利要求1所述的半导体接合结构体，其特征在于，所述第三金属互化物部呈现棒状的形态。
3.如权利要求1所述的半导体接合结构体，其特征在于，所述第一金属互化物层是由Cu-Sn构成的金属互化物构成；
所述第二金属互化物层是由Cu-Sn构成的金属互化物构成；
所述第三金属互化物部是由Au-Sn或Ag-Sn构成的金属互化物构成；
所述含有Sn的相是含有Au或Ag的构成。
4.如权利要求1所述的半导体接合结构体，其特征在于，所述第一金属互化物层是由Ag-Sn构成的金属互化物构成；
所述第二金属互化物层是由Ag-Sn构成的金属互化物构成；
所述第三金属互化物部是由Au-Sn构成的金属互化物构成；
所述含有Sn的相是含有Au或Ag的构成。
5.一种半导体接合结构体的制造方法，包括
半导体元件表面的金属膜形成工序：在半导体元件的电极表面形成金属膜，该金属膜是与Sn形成金属互化物的金属膜；
电极表面的金属膜形成工序：在基板电极表面形成金属膜，该金属膜是与Sn形成金属互化物的金属膜；
接合工序：在使形成有所述金属膜的半导体元件的电极面和形成有所述金属膜的基板电极的面相对，以含有Sn的焊锡材料将相对的面之间进行接合时，通过所述含有Sn的焊锡材料所形成的第三金属互化物部将形成在所述基板电极的面上的第一金属互化物层和形成在所述半导体元件的电极面上的第二金属互化物层进行一部分层间接合。
6.如权利要求5所述的半导体接合结构体的制造方法，其特征在于，形成在所述半导体元件的表面的金属膜的材料为Ag和/或Cu；
形成在所述电极的表面的金属膜的材料为Au和/或Ag；
所述含有Sn的焊锡材料为Sn－3wt%Ag－0.5wt%Cu。
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