CN101939826A - 半导体晶片的清洗方法以及清洗装置 - Google Patents
半导体晶片的清洗方法以及清洗装置 Download PDFInfo
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- CN101939826A CN101939826A CN2009801044146A CN200980104414A CN101939826A CN 101939826 A CN101939826 A CN 101939826A CN 2009801044146 A CN2009801044146 A CN 2009801044146A CN 200980104414 A CN200980104414 A CN 200980104414A CN 101939826 A CN101939826 A CN 101939826A
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- semiconductor wafer
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000004140 cleaning Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 99
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000002245 particle Substances 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000003643 water by type Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 61
- 238000012545 processing Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- -1 hydroxyl radical free radical Chemical class 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000005514 two-phase flow Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VCUVETGKTILCLC-UHFFFAOYSA-N 5,5-dimethyl-1-pyrroline N-oxide Chemical compound CC1(C)CCC=[N+]1[O-] VCUVETGKTILCLC-UHFFFAOYSA-N 0.000 description 1
- 241000272517 Anseriformes Species 0.000 description 1
- 241000628997 Flos Species 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008028109 | 2008-02-07 | ||
JP2008-028109 | 2008-02-07 | ||
PCT/JP2009/051952 WO2009099138A1 (ja) | 2008-02-07 | 2009-02-05 | 半導体ウエハの洗浄方法および洗浄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101939826A true CN101939826A (zh) | 2011-01-05 |
CN101939826B CN101939826B (zh) | 2012-08-22 |
Family
ID=40952211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801044146A Active CN101939826B (zh) | 2008-02-07 | 2009-02-05 | 半导体晶片的清洗方法以及清洗装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5540351B2 (zh) |
KR (1) | KR20100119783A (zh) |
CN (1) | CN101939826B (zh) |
WO (1) | WO2009099138A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106098592A (zh) * | 2016-06-20 | 2016-11-09 | 北京七星华创电子股份有限公司 | 微纳米气泡清洗晶圆的系统及方法 |
CN107353832A (zh) * | 2016-05-10 | 2017-11-17 | Jsr株式会社 | 半导体处理用组合物及处理方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011050931A (ja) * | 2009-09-04 | 2011-03-17 | Reo Laboratory Co Ltd | 水中における水酸基ラジカルの生成方法 |
US20110130009A1 (en) * | 2009-11-30 | 2011-06-02 | Lam Research Ag | Method and apparatus for surface treatment using a mixture of acid and oxidizing gas |
JP5423388B2 (ja) * | 2009-12-25 | 2014-02-19 | 三菱マテリアル株式会社 | シリコン表面の清浄化方法 |
JP5736567B2 (ja) * | 2010-10-20 | 2015-06-17 | 国立研究開発法人産業技術総合研究所 | 半導体ウエハの洗浄方法 |
WO2012090815A1 (ja) * | 2010-12-28 | 2012-07-05 | シャープ株式会社 | レジスト除去装置及びレジスト除去方法 |
JP5690168B2 (ja) * | 2011-02-25 | 2015-03-25 | 芝浦メカトロニクス株式会社 | 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 |
JP6099996B2 (ja) * | 2013-01-29 | 2017-03-22 | 信越半導体株式会社 | オゾン水を用いた洗浄方法及び洗浄装置 |
KR20160138280A (ko) * | 2014-03-31 | 2016-12-02 | 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 | 반도체의 제조 방법 및 웨이퍼 기판의 세정 방법 |
KR102455392B1 (ko) | 2018-07-30 | 2022-10-14 | 삼성전자주식회사 | 세정수 처리 장치, 플라즈마 리액션 탱크 및 세정수 처리 방법 |
CN109860025B (zh) * | 2019-02-01 | 2021-08-06 | 天津中环领先材料技术有限公司 | 一种研磨硅片清洗方法 |
JP7426620B2 (ja) * | 2020-01-23 | 2024-02-02 | 国立大学法人東北大学 | ウエハ基板の洗浄方法 |
KR20210114286A (ko) | 2020-03-10 | 2021-09-23 | 주식회사 동진쎄미켐 | 파티클 디펙트 제거 조성물 및 이를 이용한 파티클 디펙트 제거 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3043315B2 (ja) * | 1998-08-12 | 2000-05-22 | 株式会社五月工業 | 気泡発生装置 |
JP2001351893A (ja) * | 2000-06-05 | 2001-12-21 | Sumitomo Precision Prod Co Ltd | 基板処理方法 |
JP2003265938A (ja) * | 2002-03-14 | 2003-09-24 | Shigen Kaihatsu Kk | 微細気泡発生装置および微細気泡発生システム |
JP2005093873A (ja) * | 2003-09-19 | 2005-04-07 | Ebara Corp | 基板処理装置 |
TW200802575A (en) * | 2006-03-20 | 2008-01-01 | Eiji Matsumura | Substrate cleaning method and substrate cleaning apparatus |
-
2009
- 2009-02-05 JP JP2009552510A patent/JP5540351B2/ja not_active Expired - Fee Related
- 2009-02-05 WO PCT/JP2009/051952 patent/WO2009099138A1/ja active Application Filing
- 2009-02-05 CN CN2009801044146A patent/CN101939826B/zh active Active
- 2009-02-05 KR KR1020107019621A patent/KR20100119783A/ko active Search and Examination
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107353832A (zh) * | 2016-05-10 | 2017-11-17 | Jsr株式会社 | 半导体处理用组合物及处理方法 |
CN106098592A (zh) * | 2016-06-20 | 2016-11-09 | 北京七星华创电子股份有限公司 | 微纳米气泡清洗晶圆的系统及方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20100119783A (ko) | 2010-11-10 |
CN101939826B (zh) | 2012-08-22 |
JP5540351B2 (ja) | 2014-07-02 |
JPWO2009099138A1 (ja) | 2011-05-26 |
WO2009099138A1 (ja) | 2009-08-13 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: MASAYOSHI TAKAHASHI? Free format text: FORMER OWNER: INDUSTRIAL COMPREHANSIVE TECHNOLOGLES INST. Effective date: 20150422 Free format text: FORMER OWNER: REO LAB CO., LTD. Effective date: 20150422 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150422 Address after: Ibaraki Patentee after: Takahashi Masayoshi Address before: Tokyo, Japan Patentee before: Independent Administrative Corporation Industrial Comprehansive Technologles Institute Patentee before: REO Lab Co., Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: Ibaraki Patentee after: Winafus Co., Ltd Address before: Ibaraki Patentee before: Takata Masayoshi |
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TR01 | Transfer of patent right |