KR20100119783A - 반도체 웨이퍼의 세정방법 및 세정장치 - Google Patents

반도체 웨이퍼의 세정방법 및 세정장치 Download PDF

Info

Publication number
KR20100119783A
KR20100119783A KR1020107019621A KR20107019621A KR20100119783A KR 20100119783 A KR20100119783 A KR 20100119783A KR 1020107019621 A KR1020107019621 A KR 1020107019621A KR 20107019621 A KR20107019621 A KR 20107019621A KR 20100119783 A KR20100119783 A KR 20100119783A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
water
ozone
cleaning
microbubbles
Prior art date
Application number
KR1020107019621A
Other languages
English (en)
Korean (ko)
Inventor
마사요시 다카하시
가네오 치바
Original Assignee
도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠
가부시키가이샤 레오 겐큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠, 가부시키가이샤 레오 겐큐쇼 filed Critical 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠
Publication of KR20100119783A publication Critical patent/KR20100119783A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020107019621A 2008-02-07 2009-02-05 반도체 웨이퍼의 세정방법 및 세정장치 KR20100119783A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-028109 2008-02-07
JP2008028109 2008-02-07

Publications (1)

Publication Number Publication Date
KR20100119783A true KR20100119783A (ko) 2010-11-10

Family

ID=40952211

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019621A KR20100119783A (ko) 2008-02-07 2009-02-05 반도체 웨이퍼의 세정방법 및 세정장치

Country Status (4)

Country Link
JP (1) JP5540351B2 (zh)
KR (1) KR20100119783A (zh)
CN (1) CN101939826B (zh)
WO (1) WO2009099138A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860025A (zh) * 2019-02-01 2019-06-07 天津中环领先材料技术有限公司 一种研磨硅片清洗方法
KR20210114286A (ko) 2020-03-10 2021-09-23 주식회사 동진쎄미켐 파티클 디펙트 제거 조성물 및 이를 이용한 파티클 디펙트 제거 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011050931A (ja) * 2009-09-04 2011-03-17 Reo Laboratory Co Ltd 水中における水酸基ラジカルの生成方法
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
JP5423388B2 (ja) * 2009-12-25 2014-02-19 三菱マテリアル株式会社 シリコン表面の清浄化方法
JP5736567B2 (ja) * 2010-10-20 2015-06-17 国立研究開発法人産業技術総合研究所 半導体ウエハの洗浄方法
WO2012090815A1 (ja) * 2010-12-28 2012-07-05 シャープ株式会社 レジスト除去装置及びレジスト除去方法
JP5690168B2 (ja) * 2011-02-25 2015-03-25 芝浦メカトロニクス株式会社 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法
JP6099996B2 (ja) * 2013-01-29 2017-03-22 信越半導体株式会社 オゾン水を用いた洗浄方法及び洗浄装置
KR20160138280A (ko) * 2014-03-31 2016-12-02 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 반도체의 제조 방법 및 웨이퍼 기판의 세정 방법
JP6112330B1 (ja) * 2016-05-10 2017-04-12 Jsr株式会社 半導体洗浄用組成物および洗浄方法
CN106098592B (zh) * 2016-06-20 2019-11-22 北京七星华创电子股份有限公司 微纳米气泡清洗晶圆的系统及方法
KR102455392B1 (ko) 2018-07-30 2022-10-14 삼성전자주식회사 세정수 처리 장치, 플라즈마 리액션 탱크 및 세정수 처리 방법
JP7426620B2 (ja) * 2020-01-23 2024-02-02 国立大学法人東北大学 ウエハ基板の洗浄方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3043315B2 (ja) * 1998-08-12 2000-05-22 株式会社五月工業 気泡発生装置
JP2001351893A (ja) * 2000-06-05 2001-12-21 Sumitomo Precision Prod Co Ltd 基板処理方法
JP2003265938A (ja) * 2002-03-14 2003-09-24 Shigen Kaihatsu Kk 微細気泡発生装置および微細気泡発生システム
JP2005093873A (ja) * 2003-09-19 2005-04-07 Ebara Corp 基板処理装置
TW200802575A (en) * 2006-03-20 2008-01-01 Eiji Matsumura Substrate cleaning method and substrate cleaning apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860025A (zh) * 2019-02-01 2019-06-07 天津中环领先材料技术有限公司 一种研磨硅片清洗方法
KR20210114286A (ko) 2020-03-10 2021-09-23 주식회사 동진쎄미켐 파티클 디펙트 제거 조성물 및 이를 이용한 파티클 디펙트 제거 방법

Also Published As

Publication number Publication date
CN101939826A (zh) 2011-01-05
WO2009099138A1 (ja) 2009-08-13
JPWO2009099138A1 (ja) 2011-05-26
JP5540351B2 (ja) 2014-07-02
CN101939826B (zh) 2012-08-22

Similar Documents

Publication Publication Date Title
KR20100119783A (ko) 반도체 웨이퍼의 세정방법 및 세정장치
KR101226392B1 (ko) 반도체 웨이퍼의 습식 화학적 처리 방법
US5858106A (en) Cleaning method for peeling and removing photoresist
US6290777B1 (en) Method and device for washing electronic parts member, or the like
JPWO2016088731A1 (ja) マイクロ・ナノバブルによる洗浄方法及び洗浄装置
JP3940742B2 (ja) 洗浄方法
JP4157185B2 (ja) 洗浄液及び洗浄方法
US20040194812A1 (en) Substrate treatment process and apparatus
GB2287827A (en) Wet processing of semiconductor substrates
JP2008300429A (ja) 半導体基板洗浄方法、半導体基板洗浄装置、及び液中気泡混合装置
US7754019B2 (en) Method for removing particles from a semiconductor surface
KR20080061266A (ko) 전자 재료용 세정액 및 세정 방법
JP3296405B2 (ja) 電子部品部材類の洗浄方法及び洗浄装置
KR20160138280A (ko) 반도체의 제조 방법 및 웨이퍼 기판의 세정 방법
JP4482844B2 (ja) ウェハの洗浄方法
JP5736567B2 (ja) 半導体ウエハの洗浄方法
JP2007105686A (ja) 洗浄方法および超音波洗浄用洗浄剤
JP2002118085A (ja) 基板処理方法および基板処理装置
JP2007214412A (ja) 半導体基板洗浄方法
JP2005150768A (ja) 洗浄方法および電子部品の洗浄方法
US20090117500A1 (en) Photoresist strip with ozonated acetic acid solution
JP2004296463A (ja) 洗浄方法および洗浄装置
US20080169007A1 (en) Apparatus and method for processing a hydrophobic surface of a substrate
JP2002001243A (ja) 電子材料の洗浄方法
JP6020626B2 (ja) デバイス用Ｇｅ基板の洗浄方法、洗浄水供給装置及び洗浄装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
N231 Notification of change of applicant
J201 Request for trial against refusal decision
AMND Amendment
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL NUMBER: 2015101007275; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20151204

Effective date: 20170823