CN101857950A - 钽溅射靶 - Google Patents
钽溅射靶 Download PDFInfo
- Publication number
- CN101857950A CN101857950A CN201010194930A CN201010194930A CN101857950A CN 101857950 A CN101857950 A CN 101857950A CN 201010194930 A CN201010194930 A CN 201010194930A CN 201010194930 A CN201010194930 A CN 201010194930A CN 101857950 A CN101857950 A CN 101857950A
- Authority
- CN
- China
- Prior art keywords
- sputtering target
- tantalum sputtering
- target
- orientation
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 139
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 238000005477 sputtering target Methods 0.000 title claims abstract description 70
- 238000002425 crystallisation Methods 0.000 claims abstract description 26
- 230000008025 crystallization Effects 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 36
- 238000005096 rolling process Methods 0.000 claims description 21
- 150000003481 tantalum Chemical class 0.000 claims description 12
- 230000008520 organization Effects 0.000 claims description 3
- 238000010891 electric arc Methods 0.000 abstract description 16
- 238000000137 annealing Methods 0.000 description 53
- 238000001953 recrystallisation Methods 0.000 description 45
- 239000000463 material Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 230000008859 change Effects 0.000 description 20
- 238000005097 cold rolling Methods 0.000 description 13
- 238000005266 casting Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 238000010273 cold forging Methods 0.000 description 9
- 230000014509 gene expression Effects 0.000 description 9
- 238000005242 forging Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004927 fusion Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000002362 mulch Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005482 strain hardening Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 230000003019 stabilising effect Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
- B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | 实施例6 | 比较例1 | 比较例2 | 比较例3 | |
溅射初期 | 2.60% | 3.10% | 3.10% | 2.80% | 3.00% | 2.50% | 4.50% | 5.00% | 3.90% |
溅射中期 | 2.80% | 3.10% | 3.20% | 3.00% | 3.10% | 3.20% | 5.50% | 4.70% | 4.50% |
溅射后期 | 3.20% | 3.30% | 3.40% | 3.20% | 3.30% | 3.30% | 5.50% | 5.30% | 4.50% |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-376380 | 2003-11-06 | ||
JP2003376380 | 2003-11-06 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800309185A Division CN1871372B (zh) | 2003-11-06 | 2004-10-20 | 钽溅射靶 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101857950A true CN101857950A (zh) | 2010-10-13 |
CN101857950B CN101857950B (zh) | 2012-08-08 |
Family
ID=34567109
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101949307A Expired - Lifetime CN101857950B (zh) | 2003-11-06 | 2004-10-20 | 钽溅射靶 |
CN2004800309185A Expired - Lifetime CN1871372B (zh) | 2003-11-06 | 2004-10-20 | 钽溅射靶 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800309185A Expired - Lifetime CN1871372B (zh) | 2003-11-06 | 2004-10-20 | 钽溅射靶 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7892367B2 (zh) |
EP (2) | EP1681368B1 (zh) |
JP (3) | JP4593475B2 (zh) |
KR (1) | KR100760156B1 (zh) |
CN (2) | CN101857950B (zh) |
TW (1) | TW200523376A (zh) |
WO (1) | WO2005045090A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102658346A (zh) * | 2012-04-06 | 2012-09-12 | 宁夏东方钽业股份有限公司 | 一种大规格钽靶材的锻造方法 |
CN103459657A (zh) * | 2011-04-18 | 2013-12-18 | 株式会社东芝 | 高纯度Ni溅射靶及其制造方法 |
CN104937133A (zh) * | 2013-03-04 | 2015-09-23 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
CN105555997A (zh) * | 2014-03-27 | 2016-05-04 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
CN114645253A (zh) * | 2022-03-09 | 2022-06-21 | 先导薄膜材料有限公司 | 一种半导体钽靶材及其锻造方法 |
CN115458675A (zh) * | 2022-11-11 | 2022-12-09 | 阿里巴巴达摩院(杭州)科技有限公司 | 钽金属薄膜处理方法、量子器件及量子芯片 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4883546B2 (ja) * | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
JP4263900B2 (ja) * | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
EP1609881B1 (en) * | 2003-04-01 | 2011-04-20 | Nippon Mining & Metals Co., Ltd. | Method of manufacturing a tantalum sputtering target |
US8177947B2 (en) * | 2005-04-28 | 2012-05-15 | Jx Nippon Mining & Metals Corporation | Sputtering target |
WO2007040014A1 (ja) * | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | スパッタリングターゲット |
JP4974362B2 (ja) * | 2006-04-13 | 2012-07-11 | 株式会社アルバック | Taスパッタリングターゲットおよびその製造方法 |
JP5187713B2 (ja) * | 2006-06-09 | 2013-04-24 | 国立大学法人電気通信大学 | 金属材料の微細化加工方法 |
JP4290211B2 (ja) | 2006-08-11 | 2009-07-01 | キヤノン株式会社 | 結晶性金属膜 |
KR101070185B1 (ko) * | 2006-10-03 | 2011-10-05 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 구리-망간 합금 스퍼터링 타겟트 및 반도체 배선 |
US9095885B2 (en) * | 2007-08-06 | 2015-08-04 | H.C. Starck Inc. | Refractory metal plates with improved uniformity of texture |
SG173141A1 (en) | 2009-05-22 | 2011-08-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
SG174153A1 (en) | 2009-08-11 | 2011-10-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
KR20150039218A (ko) * | 2009-11-17 | 2015-04-09 | 가부시끼가이샤 도시바 | 탄탈 스퍼터링 타겟 및 탄탈 스퍼터링 타겟의 제조 방법 및 반도체 소자의 제조 방법 |
WO2011111373A1 (ja) | 2010-03-11 | 2011-09-15 | 株式会社 東芝 | スパッタリングターゲットとその製造方法、および半導体素子の製造方法 |
SG186765A1 (en) | 2010-08-09 | 2013-02-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
KR20160108570A (ko) | 2011-11-30 | 2016-09-19 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
JP5324016B1 (ja) | 2012-03-21 | 2013-10-23 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法並びに同ターゲットを用いて形成した半導体配線用バリア膜 |
SG11201501370PA (en) | 2012-12-19 | 2015-04-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target and method for producing same |
WO2014097897A1 (ja) | 2012-12-19 | 2014-06-26 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
CN104046942B (zh) * | 2013-03-12 | 2016-09-14 | 中国兵器工业第五九研究所 | 一种金属钽涂层的制备方法 |
KR20170141280A (ko) | 2013-10-01 | 2017-12-22 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 |
SG11201708112TA (en) * | 2015-05-22 | 2017-11-29 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target, and production method therefor |
WO2016190160A1 (ja) * | 2015-05-22 | 2016-12-01 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
CN107614744B (zh) | 2015-12-28 | 2020-04-24 | Jx金属株式会社 | 溅射靶的制造方法 |
TWI707956B (zh) * | 2016-06-28 | 2020-10-21 | 光洋應用材料科技股份有限公司 | 鉭靶材及其製法 |
CN106521434B (zh) * | 2016-11-07 | 2019-01-22 | 长沙南方钽铌有限责任公司 | 一种具有择优取向的高纯钽靶材的制备方法 |
WO2018179742A1 (ja) * | 2017-03-30 | 2018-10-04 | Jx金属株式会社 | タンタルスパッタリングターゲット |
Family Cites Families (26)
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DE3825634C2 (de) | 1988-07-28 | 1994-06-30 | Thyssen Stahl Ag | Verfahren zur Erzeugung von Warmbad oder Grobblechen |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
JPH10195611A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
US6197134B1 (en) | 1997-01-08 | 2001-03-06 | Dowa Mining Co., Ltd. | Processes for producing fcc metals |
JPH1180942A (ja) * | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6323055B1 (en) | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6193821B1 (en) | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
JP2000323434A (ja) * | 1999-05-11 | 2000-11-24 | Toshiba Corp | スパッタターゲット、配線膜および電子部品 |
JP2000323433A (ja) * | 1999-05-11 | 2000-11-24 | Toshiba Corp | スパッタターゲット、配線膜および電子部品 |
JP2000355761A (ja) | 1999-06-17 | 2000-12-26 | Hitachi Metals Ltd | バリア材成膜用Ta系ターゲットおよびその製造方法 |
JP2001020065A (ja) * | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP4519981B2 (ja) * | 2000-03-15 | 2010-08-04 | アルバックマテリアル株式会社 | 固相拡散接合スパッタリングターゲット組立て体及びその製造方法 |
JP3905301B2 (ja) | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
IL156802A0 (en) * | 2001-01-11 | 2004-02-08 | Cabot Corp | Tantalum and niobium billets and methods of producing same |
ES2272707T3 (es) * | 2001-02-20 | 2007-05-01 | H. C. Starck, Inc. | Placas de metal refractario de textura uniforme y metodos para fabricar las mismas. |
JP4817536B2 (ja) * | 2001-06-06 | 2011-11-16 | 株式会社東芝 | スパッタターゲット |
US6770154B2 (en) * | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
WO2003046250A1 (fr) * | 2001-11-26 | 2003-06-05 | Nikko Materials Company, Limited | Cible de pulverisation et procede de fabrication associe |
JP3898043B2 (ja) * | 2001-11-30 | 2007-03-28 | 株式会社東芝 | スパッタリングターゲットとそれを用いた半導体デバイスおよびスパッタリング装置 |
JP4883546B2 (ja) | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
JP4263900B2 (ja) | 2002-11-13 | 2009-05-13 | 日鉱金属株式会社 | Taスパッタリングターゲット及びその製造方法 |
JP4672967B2 (ja) * | 2003-01-10 | 2011-04-20 | Jx日鉱日石金属株式会社 | ターゲットの製造方法 |
EP1609881B1 (en) * | 2003-04-01 | 2011-04-20 | Nippon Mining & Metals Co., Ltd. | Method of manufacturing a tantalum sputtering target |
-
2004
- 2004-10-20 EP EP04792639.9A patent/EP1681368B1/en not_active Expired - Lifetime
- 2004-10-20 WO PCT/JP2004/015473 patent/WO2005045090A1/ja active Application Filing
- 2004-10-20 US US10/572,252 patent/US7892367B2/en active Active
- 2004-10-20 JP JP2005515251A patent/JP4593475B2/ja not_active Expired - Lifetime
- 2004-10-20 CN CN2010101949307A patent/CN101857950B/zh not_active Expired - Lifetime
- 2004-10-20 EP EP10175208.7A patent/EP2253730B1/en not_active Expired - Lifetime
- 2004-10-20 KR KR1020067009993A patent/KR100760156B1/ko active IP Right Grant
- 2004-10-20 CN CN2004800309185A patent/CN1871372B/zh not_active Expired - Lifetime
- 2004-10-22 TW TW093132081A patent/TW200523376A/zh unknown
-
2009
- 2009-04-30 JP JP2009110384A patent/JP5578496B2/ja not_active Expired - Lifetime
-
2013
- 2013-04-22 JP JP2013089036A patent/JP2013174019A/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103459657A (zh) * | 2011-04-18 | 2013-12-18 | 株式会社东芝 | 高纯度Ni溅射靶及其制造方法 |
CN103459657B (zh) * | 2011-04-18 | 2015-05-20 | 株式会社东芝 | 高纯度Ni溅射靶及其制造方法 |
CN102658346A (zh) * | 2012-04-06 | 2012-09-12 | 宁夏东方钽业股份有限公司 | 一种大规格钽靶材的锻造方法 |
CN104937133A (zh) * | 2013-03-04 | 2015-09-23 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
CN105555997A (zh) * | 2014-03-27 | 2016-05-04 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
CN105555997B (zh) * | 2014-03-27 | 2017-09-26 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
CN114645253A (zh) * | 2022-03-09 | 2022-06-21 | 先导薄膜材料有限公司 | 一种半导体钽靶材及其锻造方法 |
CN114645253B (zh) * | 2022-03-09 | 2023-09-05 | 先导薄膜材料(安徽)有限公司 | 一种半导体钽靶材及其锻造方法 |
CN115458675A (zh) * | 2022-11-11 | 2022-12-09 | 阿里巴巴达摩院(杭州)科技有限公司 | 钽金属薄膜处理方法、量子器件及量子芯片 |
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EP1681368B1 (en) | 2021-06-30 |
EP1681368A1 (en) | 2006-07-19 |
JP5578496B2 (ja) | 2014-08-27 |
CN1871372B (zh) | 2010-11-17 |
TW200523376A (en) | 2005-07-16 |
EP1681368A4 (en) | 2009-01-28 |
WO2005045090A1 (ja) | 2005-05-19 |
US7892367B2 (en) | 2011-02-22 |
JP2009197332A (ja) | 2009-09-03 |
TWI301512B (zh) | 2008-10-01 |
CN1871372A (zh) | 2006-11-29 |
CN101857950B (zh) | 2012-08-08 |
JP2013174019A (ja) | 2013-09-05 |
US20070023281A1 (en) | 2007-02-01 |
EP2253730A2 (en) | 2010-11-24 |
EP2253730A3 (en) | 2011-01-19 |
KR20060097044A (ko) | 2006-09-13 |
EP2253730B1 (en) | 2018-05-02 |
KR100760156B1 (ko) | 2007-09-18 |
JPWO2005045090A1 (ja) | 2007-11-29 |
JP4593475B2 (ja) | 2010-12-08 |
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