CN101638806B - 硅晶片的制造方法 - Google Patents
硅晶片的制造方法 Download PDFInfo
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- CN101638806B CN101638806B CN2009101574962A CN200910157496A CN101638806B CN 101638806 B CN101638806 B CN 101638806B CN 2009101574962 A CN2009101574962 A CN 2009101574962A CN 200910157496 A CN200910157496 A CN 200910157496A CN 101638806 B CN101638806 B CN 101638806B
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- silicon wafer
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- heat treatment
- silicon
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 159
- 239000010703 silicon Substances 0.000 title claims abstract description 159
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 151
- 238000001816 cooling Methods 0.000 claims abstract description 94
- 239000007789 gas Substances 0.000 claims abstract description 93
- 235000012431 wafers Nutrition 0.000 claims description 146
- 239000001301 oxygen Substances 0.000 claims description 68
- 229910052760 oxygen Inorganic materials 0.000 claims description 68
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 67
- 239000013078 crystal Substances 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 abstract description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 40
- 238000012360 testing method Methods 0.000 description 24
- 229910052786 argon Inorganic materials 0.000 description 20
- 230000002950 deficient Effects 0.000 description 19
- 238000007669 thermal treatment Methods 0.000 description 19
- 150000003376 silicon Chemical class 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 239000006104 solid solution Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004854 X-ray topography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008198682 | 2008-07-31 | ||
JP2008-198682 | 2008-07-31 | ||
JP2008198682A JP5561918B2 (ja) | 2008-07-31 | 2008-07-31 | シリコンウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101638806A CN101638806A (zh) | 2010-02-03 |
CN101638806B true CN101638806B (zh) | 2012-07-04 |
Family
ID=41613976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101574962A Active CN101638806B (zh) | 2008-07-31 | 2009-07-30 | 硅晶片的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7977219B2 (zh) |
JP (1) | JP5561918B2 (zh) |
KR (1) | KR101076493B1 (zh) |
CN (1) | CN101638806B (zh) |
TW (1) | TWI420599B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5641533B2 (ja) * | 2010-06-29 | 2014-12-17 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP5439305B2 (ja) * | 2010-07-14 | 2014-03-12 | 信越半導体株式会社 | シリコン基板の製造方法及びシリコン基板 |
JP5530856B2 (ja) | 2010-08-18 | 2014-06-25 | 信越半導体株式会社 | ウエーハの熱処理方法及びシリコンウエーハの製造方法並びに熱処理装置 |
US8866271B2 (en) * | 2010-10-07 | 2014-10-21 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device |
JP5572569B2 (ja) * | 2011-02-24 | 2014-08-13 | 信越半導体株式会社 | シリコン基板の製造方法及びシリコン基板 |
JP5583053B2 (ja) * | 2011-02-28 | 2014-09-03 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP5641537B2 (ja) * | 2011-03-22 | 2014-12-17 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP5583070B2 (ja) * | 2011-04-27 | 2014-09-03 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP5997552B2 (ja) * | 2011-09-27 | 2016-09-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP2013163598A (ja) * | 2012-01-10 | 2013-08-22 | Globalwafers Japan Co Ltd | シリコンウェーハの製造方法 |
JP5621791B2 (ja) | 2012-01-11 | 2014-11-12 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法及び電子デバイス |
JP2013201314A (ja) * | 2012-03-26 | 2013-10-03 | Globalwafers Japan Co Ltd | シリコンウェーハの製造方法 |
JP5999949B2 (ja) * | 2012-03-26 | 2016-09-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
JP5984448B2 (ja) * | 2012-03-26 | 2016-09-06 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
CN102978688B (zh) * | 2012-11-16 | 2015-07-08 | 晶科能源有限公司 | 一种直拉单晶法的冷却工艺 |
US8889534B1 (en) * | 2013-05-29 | 2014-11-18 | Tokyo Electron Limited | Solid state source introduction of dopants and additives for a plasma doping process |
JP5885305B2 (ja) * | 2013-08-07 | 2016-03-15 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
JP6187689B2 (ja) * | 2014-06-02 | 2017-08-30 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
FR3034108A1 (fr) * | 2015-03-24 | 2016-09-30 | Soitec Silicon On Insulator | Methode de reduction de defauts et fabrication de substrat |
CN107154353B (zh) | 2016-03-03 | 2020-01-24 | 上海新昇半导体科技有限公司 | 晶圆热处理的方法 |
CN105977152B (zh) * | 2016-05-09 | 2019-01-29 | 浙江大学 | 〈311〉直拉硅片的一种热处理方法 |
CN106087052A (zh) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | 一种多晶硅铸锭的两步退火工艺 |
DE102019207433A1 (de) * | 2019-05-21 | 2020-11-26 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
US11695048B2 (en) * | 2020-04-09 | 2023-07-04 | Sumco Corporation | Silicon wafer and manufacturing method of the same |
Citations (2)
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US6663709B2 (en) * | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
CN1591781A (zh) * | 2003-09-05 | 2005-03-09 | 海力士半导体有限公司 | 硅晶片及其制造方法 |
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JPH05335301A (ja) * | 1992-06-03 | 1993-12-17 | Oki Electric Ind Co Ltd | シリコン酸化膜の形成方法 |
JP3223847B2 (ja) * | 1996-06-28 | 2001-10-29 | 住友金属工業株式会社 | シリコン単結晶ウェーハの熱処理方法と製造方法 |
JP3011178B2 (ja) * | 1998-01-06 | 2000-02-21 | 住友金属工業株式会社 | 半導体シリコンウェーハ並びにその製造方法と熱処理装置 |
DE19825607C2 (de) * | 1998-06-08 | 2000-08-10 | Siemens Ag | Integrierte Halbleiterschaltung mit Füllstrukturen |
JP3711199B2 (ja) * | 1998-07-07 | 2005-10-26 | 信越半導体株式会社 | シリコン基板の熱処理方法 |
JP4405083B2 (ja) * | 1998-09-02 | 2010-01-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 理想的な酸素析出シリコンウエハの製造方法 |
JP2001144275A (ja) * | 1999-08-27 | 2001-05-25 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウエーハの製造方法および貼り合わせsoiウエーハ |
JP2001308101A (ja) * | 2000-04-19 | 2001-11-02 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法及びシリコンウェーハ |
JP4385539B2 (ja) | 2001-03-29 | 2009-12-16 | 株式会社Sumco | シリコン単結晶ウェーハの熱処理方法 |
US6897084B2 (en) * | 2001-04-11 | 2005-05-24 | Memc Electronic Materials, Inc. | Control of oxygen precipitate formation in high resistivity CZ silicon |
JP4154881B2 (ja) | 2001-10-03 | 2008-09-24 | 株式会社Sumco | シリコン半導体基板の熱処理方法 |
JP2003297839A (ja) * | 2002-04-03 | 2003-10-17 | Sumitomo Mitsubishi Silicon Corp | シリコンウエーハの熱処理方法 |
JP2004063685A (ja) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
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2008
- 2008-07-31 JP JP2008198682A patent/JP5561918B2/ja active Active
-
2009
- 2009-07-30 TW TW098125717A patent/TWI420599B/zh active
- 2009-07-30 CN CN2009101574962A patent/CN101638806B/zh active Active
- 2009-07-30 US US12/512,229 patent/US7977219B2/en active Active
- 2009-07-31 KR KR1020090070811A patent/KR101076493B1/ko active IP Right Grant
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US6663709B2 (en) * | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
CN1591781A (zh) * | 2003-09-05 | 2005-03-09 | 海力士半导体有限公司 | 硅晶片及其制造方法 |
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JP特开2002-299344A 2002.10.11 |
JP特开2004-193354A 2004.07.08 |
余学功等.大直径直拉硅片的快速热处理.《半导体学报》.2003,第24卷(第5期),490-493. * |
Also Published As
Publication number | Publication date |
---|---|
TWI420599B (zh) | 2013-12-21 |
KR20100014188A (ko) | 2010-02-10 |
KR101076493B1 (ko) | 2011-10-24 |
JP5561918B2 (ja) | 2014-07-30 |
US7977219B2 (en) | 2011-07-12 |
JP2010040589A (ja) | 2010-02-18 |
TW201017766A (en) | 2010-05-01 |
US20100055884A1 (en) | 2010-03-04 |
CN101638806A (zh) | 2010-02-03 |
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