CN101587849B - 具有通过冲压形成的特征的半导体器件封装 - Google Patents
具有通过冲压形成的特征的半导体器件封装 Download PDFInfo
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- CN101587849B CN101587849B CN200910149767XA CN200910149767A CN101587849B CN 101587849 B CN101587849 B CN 101587849B CN 200910149767X A CN200910149767X A CN 200910149767XA CN 200910149767 A CN200910149767 A CN 200910149767A CN 101587849 B CN101587849 B CN 101587849B
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4260208P | 2008-04-04 | 2008-04-04 | |
| US61/042,602 | 2008-04-04 | ||
| US12/191,527 US7838339B2 (en) | 2008-04-04 | 2008-08-14 | Semiconductor device package having features formed by stamping |
| US12/191,527 | 2008-08-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101587849A CN101587849A (zh) | 2009-11-25 |
| CN101587849B true CN101587849B (zh) | 2012-04-11 |
Family
ID=41132493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910149767XA Active CN101587849B (zh) | 2008-04-04 | 2009-04-03 | 具有通过冲压形成的特征的半导体器件封装 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7838339B2 (enExample) |
| JP (1) | JP2009267398A (enExample) |
| CN (1) | CN101587849B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI618201B (zh) * | 2013-03-09 | 2018-03-11 | Adventive Ipbank | 低厚度引線半導體封裝 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7838339B2 (en) * | 2008-04-04 | 2010-11-23 | Gem Services, Inc. | Semiconductor device package having features formed by stamping |
| JP5220714B2 (ja) * | 2009-09-18 | 2013-06-26 | セイコーインスツル株式会社 | 樹脂封止型半導体装置及びその製造方法 |
| DE102010062346A1 (de) * | 2010-12-02 | 2012-06-06 | Robert Bosch Gmbh | Elektronische Baugruppe sowie Verfahren zu deren Herstellung |
| EP3536582B1 (en) | 2011-04-07 | 2022-08-10 | Mitsubishi Electric Corporation | Mold module and electric power steering apparatus |
| CN102779765B (zh) * | 2011-05-13 | 2016-08-17 | 飞思卡尔半导体公司 | 具有交错引线的半导体器件 |
| US10491966B2 (en) * | 2011-08-04 | 2019-11-26 | Saturn Licensing Llc | Reception apparatus, method, computer program, and information providing apparatus for providing an alert service |
| CN102324391B (zh) * | 2011-09-19 | 2013-04-24 | 杰群电子科技(东莞)有限公司 | 无引脚半导体引线框架焊铝箔方法 |
| US20140167237A1 (en) * | 2012-12-14 | 2014-06-19 | Samsung Electro-Mechanics Co., Ltd. | Power module package |
| US11469205B2 (en) | 2013-03-09 | 2022-10-11 | Adventive International Ltd. | Universal surface-mount semiconductor package |
| US9281264B2 (en) | 2013-03-11 | 2016-03-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic packaging substrate with etching indentation as die attachment anchor and method of manufacturing the same |
| DE102013211089B4 (de) * | 2013-06-14 | 2025-05-15 | Robert Bosch Gmbh | Substrat mit einem Bereich zur Begrenzung eines Lotbereichs und Verfahren zu dessen Herstellung |
| US9627305B2 (en) * | 2013-07-11 | 2017-04-18 | Infineon Technologies Ag | Semiconductor module with interlocked connection |
| CN103594448A (zh) * | 2013-11-15 | 2014-02-19 | 杰群电子科技(东莞)有限公司 | 一种引线框架 |
| JP2016058612A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社デンソー | 半導体装置 |
| US10134670B2 (en) | 2015-04-08 | 2018-11-20 | International Business Machines Corporation | Wafer with plated wires and method of fabricating same |
| JP6555927B2 (ja) * | 2015-05-18 | 2019-08-07 | 大口マテリアル株式会社 | 半導体素子搭載用リードフレーム及び半導体装置の製造方法 |
| JP6621681B2 (ja) * | 2016-02-17 | 2019-12-18 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
| JP2018081967A (ja) * | 2016-11-14 | 2018-05-24 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US10535812B2 (en) * | 2017-09-04 | 2020-01-14 | Rohm Co., Ltd. | Semiconductor device |
| US10867894B2 (en) * | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101587849A (zh) | 2009-11-25 |
| US8106493B2 (en) | 2012-01-31 |
| US7838339B2 (en) | 2010-11-23 |
| US20090250796A1 (en) | 2009-10-08 |
| US20110024886A1 (en) | 2011-02-03 |
| JP2009267398A (ja) | 2009-11-12 |
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