CN107112305A - 具有经改进接触引脚的扁平无引线封装 - Google Patents
具有经改进接触引脚的扁平无引线封装 Download PDFInfo
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- CN107112305A CN107112305A CN201580062065.1A CN201580062065A CN107112305A CN 107112305 A CN107112305 A CN 107112305A CN 201580062065 A CN201580062065 A CN 201580062065A CN 107112305 A CN107112305 A CN 107112305A
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- pin
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
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- ZGHQUYZPMWMLBM-UHFFFAOYSA-N 1,2-dichloro-4-phenylbenzene Chemical compound C1=C(Cl)C(Cl)=CC=C1C1=CC=CC=C1 ZGHQUYZPMWMLBM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
根据本发明的实施例,一种用于集成电路IC装置的引线框架可包括:中心支撑结构,其用于安装IC芯片;多个引脚,其从所述中心支撑结构延伸;及棒条,其连接所述多个引脚、远离所述中心支撑结构。所述多个引脚中的每一引脚可包含微坑。
Description
相关专利申请案
本申请案主张于2014年11月20日提出申请的共同拥有的第62/082,357号美国临时专利申请案的优先权,所述美国临时专利申请案特此出于所有目的以引用方式并入本文中。
技术领域
本发明涉及集成电路封装,特定来说涉及针对集成电路的所谓的扁平无引线封装。
背景技术
扁平无引线封装是指具有集成引脚以用于表面安装到印刷电路板(PCB)的一种类型的集成电路(IC)封装。扁平无引线有时可被称作微引线框架(MLF)。扁平无引线封装(举例来说,包含四方扁平无引线(QFN)及双扁平无引线(DFN))提供经囊封IC组件与外部电路之间的物理及电连接(例如,连接到印刷电路板(PCB))。
一般来说,用于扁平无引线封装的接触引脚不延伸超出封装的边缘。引脚通常由单引线框架形成,所述单引线框架包含用于IC的裸片的中心支撑结构。引线框架及IC囊封于通常由塑料制成的外壳中。每一引线框架可是引线框架矩阵的一部分,所述矩阵经模制以囊封数个个别IC装置。通常,通过切割穿过引线框架的任何连结部件而将所述矩阵锯切开以将个别IC装置分离。锯切或切割工艺还暴露沿着封装的边缘的接触引脚。
一旦经锯切,裸露的接触引脚可针对回流焊接提供不良连接或不提供连接。接触引脚的经暴露面可不提供用以提供可靠连接的充分可润湿侧面。回流焊接是用于将表面安装组件附接到PCB的优选方法,其打算熔融焊料且加热邻接表面而不使电组件过热,且借此减小对所述组件的损坏的风险。
发明内容
因此,改进用于回流焊接工艺(其用以将所述扁平无引线封装安装到外部电路)的扁平无引线接触引脚的可润湿表面的工艺或方法可提供呈QFN或其它扁平无引线封装的IC的经改进电性能及机械性能。
根据本发明的实施例,一种用于集成电路(IC)装置的引线框架可包括:中心支撑结构,其用于安装IC芯片;多个引脚,其从所述中心支撑结构延伸;及棒条,其连接所述多个引脚、远离所述中心支撑结构。所述多个引脚中的每一引脚可包含微坑。每一引脚的所述微坑可邻近所述棒条安置。在一些实施例中,所述引线框架可用于四方扁平无引线IC封装。在一些实施例中,所述引线框架可用于双扁平无引线IC封装。所述引线框架可包含用于制造多个IC装置的排列成矩阵的大量中心支撑结构。在一些实施例中,每一微坑可从所述棒条的第一侧延伸到所述棒条的第二侧。每一微坑可以方形形状蚀刻到所述相应引脚中。每一微坑可以各边具有大约0.14mm的长度的方形形状蚀刻到所述相应引脚中。每一微坑可蚀刻到为所述相应引脚的全高度的大约一半的深度。
根据本发明的实施例,一种用于制造呈扁平无引线封装的集成电路(IC)装置的方法可包含:将IC芯片安装到引线框架的中心支撑结构上;将所述IC芯片接合到所述引线框架的至少一些引脚;囊封所述引线框架及经接合IC芯片,从而形成IC封装;及通过在与所述多个引脚的所述微坑相交的一组切割线处锯切穿过所述经囊封引线框架而切割所述IC封装以使其摆脱棒条。所述引线框架可包含:中心支撑结构;多个引脚,其从所述中心支撑结构延伸;及棒条,其连接所述多个引脚、远离所述中心支撑结构。所述多个引脚中的每一引脚可包含微坑。沿着所述组切割线锯切可暴露所述多个引脚中的每一者的端面且留下所述微坑的一部分,所述部分从所述IC封装的底部表面延伸到具有所述引脚的所述经暴露端面的侧表面。在一些实施例中,所述方法可包含:执行隔离切割以在不将所述IC封装与所述引线框架分离的情况下将所述IC封装的个别引脚隔离,及在所述隔离切割之后执行对所述经隔离个别引脚的电路测试。一些实施例可包含使用线接合将所述IC芯片接合到所述多个引脚中的至少一些引脚。一些实施例可包含在切割所述IC封装以使其摆脱所述棒条之前,对包含所述微坑的所述多个引脚在所述IC封装的底部表面上的经暴露部分进行电镀。
根据本发明的另一实施例,一种用于将呈扁平无引线封装的集成电路(IC)装置安装到印刷电路板(PCB)上的方法可包含:将IC芯片安装到引线框架的中心支撑结构上;将所述IC芯片接合到多个引脚中的至少一些引脚;囊封所述引线框架及经接合IC芯片,从而形成IC封装;通过在与所述多个引脚的所述微坑相交的一组切割线处锯切穿过所述经囊封引线框架而切割所述IC封装以使其摆脱棒条;及使用回流焊接方法将所述IC封装的所述多个引脚连结到所述PCB上的相应接触点以将所述扁平无引线IC封装附接到所述PCB。沿着所述组切割线锯切可暴露所述多个引脚中的每一者的端面且留下所述微坑的一部分,所述部分从所述IC封装的底部表面延伸到具有所述引脚的所述经暴露端面的侧表面。所述引线框架可包含:中心支撑结构;多个引脚,其从所述中心支撑结构延伸;及棒条,其连接所述多个引脚、远离所述中心支撑结构。所述多个引脚中的每一引脚可包含微坑。所述方法的一些实施例可包含:执行隔离切割以在不将所述IC封装与所述棒条分离的情况下将所述IC封装的个别引脚隔离,及在所述隔离切割之后执行对所述经隔离个别引脚的电路测试。所述方法的一些实施例可包含使用线接合将所述IC芯片接合到所述多个引脚中的至少一些引脚。所述方法的一些实施例可提供占所述引脚的所述经暴露表面的大约60%的圆角高度。所述方法的一些实施例可包含在切割所述IC封装以使其摆脱所述棒条之前,对包含所述微坑的所述多个引脚在所述IC封装的底部表面上的经暴露部分进行电镀。
根据本发明的一些实施例,一种呈扁平无引线封装的集成电路(IC)装置可包含:IC芯片,其安装到引线框架的中心支撑结构上且与所述引线框架囊封在一起以形成具有底部面及四个边的IC封装;一组引脚,其具有沿着所述IC封装的所述四个边的下部边缘暴露的面;及微坑,其位于所述组引脚的每一者中,沿着所述IC封装的所述底部面的周界安置且延伸到所述组引脚的所述经暴露面中。至少面对包含所述微坑的所述多个引脚中的每一者的经暴露部分的底部可为经电镀的。在一些实施例中,所述多个引脚可以大约60%的圆角高度附接到印刷电路板。
附图说明
图1是展示根据本发明的教示的穿过安装于印刷电路板(PCB)上的扁平无引线封装的实施例的横截面侧视图的示意图。
图2A是以侧视图与仰视图展示典型QFN封装的一部分的图片。图2B展示通过锯切穿过经囊封引线框架而暴露的沿着QFN封装的边缘的铜接触引脚的面的放大视图。
图3是展示在回流焊接工艺未能提供到PCB的充分机械连接及电连接之后的典型QFN封装的图片。
图4A及4B是展示在具有用于回流焊接的高可润湿侧面的扁平无引线封装中并入有本发明的教示的经封装IC装置的部分视图的图片。
图5A及5B是展示在通过回流焊接工艺安装到PCB之后的典型QFN封装的等角视图的图式。
图6A及6B是展示包含可用于实践本发明的教示的多个引线框架的引线框架矩阵的图式。
图7A及7B是展示并入有本发明的教示的两个邻近引线框架的多个引脚的一部分的图式。
图8A到8D展示并入有本发明的教示的可用于实践本发明的教示的微坑及引脚的各种实施例。
图9A及9B是展示并入有本发明的教示的经囊封IC装置的等角视图的图式。
图10A及10B是展示根据本发明的教示的通过回流焊接工艺附接到PCB且以塑料囊封的IC装置的等角视图的图式。
图11是图解说明用于制造呈并入有本发明的教示的扁平无引线封装的IC装置的实例性方法的流程图。
图12图解说明可用于实践本发明的教示的实例性工艺。
具体实施方式
图1是展示穿过安装于印刷电路板(PCB)12上的扁平无引线封装10的横截面图的侧视图。封装10包含接触引脚14a、14b,裸片16,引线框架18及囊封件20。裸片16可包含任何集成电路,无论其被称为IC、芯片及/或微芯片。裸片16可包含安置于半导体材料(例如硅)的衬底上的一组电子电路。
如图1中所展示,接触引脚14a是其中焊料20a未保持附接到接触引脚14a的经暴露面的失败的回流工艺的原因;通过锯切封装10以使其摆脱引线框架矩阵(图6中更详细地展示且在下文论述)而形成的接触引脚14a的裸露的铜面可促成此类失败。相比来说,接触引脚14b展示通过成功的回流过程形成的经改进焊接连接20b。此经改进连接提供电连通及机械支撑两者。接触引脚14b的面可能在回流过程之前已被电镀(例如,利用锡电镀)。
图2A是以侧视图与仰视图展示典型QFN封装10的一部分的图片。图2B展示通过锯切穿过经囊封引线框架18而暴露的沿着QFN封装10的边缘的铜接触引脚14a的面24的放大视图。如图2A中所展示,接触引脚14a的底部22被电镀(例如,利用锡电镀)但经暴露面24是裸铜。
图3是在回流焊接工艺未能提供到PCB 12的充分机械连接及电连接之后的典型QFN封装10的图片。如图3中所展示,接触引脚14a的裸铜面24在回流焊接之后可提供不良连接或不提供连接。接触引脚14a的经暴露面24可不提供用以提供可靠连接的充分可润湿侧面。
图4A及4B是展示在锯切穿过经囊封引线框架18之后的典型QFN封装10的等角视图的图式。每一接触引脚14a的底部22均被电镀(例如,利用锡电镀),但每一接触引脚的经暴露面24由于锯切工艺而未被电镀。在许多QFN封装10中,存在额外经电镀中心表面,例如热垫26。
图5A及5B是展示在通过回流焊接工艺安装到PCB 28之后的典型QFN封装10的等角视图的图式。PCB包含通过焊珠32机械连接且电连接到接触引脚14a的引线30。如图5A及5B中所展示,焊珠32仅覆盖经暴露面24的一小部分。如上文所论述,此可是由于引脚14a的不充分的可润湿侧面。
图6A及6B是展示包含可用于实践本发明的教示的多个引线框架42a、42b、42c、42d的引线框架矩阵40的图式。如所展示,每一引线框架42可包含中心支撑结构44、从所述中心支撑结构延伸的多个引脚46,及连接所述多个引脚、远离所述中心支撑结构的一或多个棒条48。引线框架42可包含金属结构,所述金属结构提供通过引脚46与安装到中心支撑结构44的IC装置(图6A及6B中未展示)进行的电连通并且为所述IC装置提供机械支撑。在一些应用中,IC装置可胶合到中心支撑结构44。在一些实施例中,IC装置可被称为裸片。在一些实施例中,裸片或IC装置上的垫或接触点可通过接合(例如,线接合、球接合、楔接合、柔性接合、热超声接合或任何其它适当接合技术)连接到相应引脚。在一些实施例中,引线框架42可通过蚀刻或冲压制造。
图7A及7B是展示两个邻近引线框架42a、42b的多个引脚46的一部分的图式。如图7A及7B中所展示,引脚46可各自包含微坑50。在本发明的一些实施例中,微坑50可被蚀刻到引脚46中。在图7A及7B的实施例中,微坑50可是边具有大约0.14mm的长度且安置于棒条48的相对侧上的方形。在一些实施例中,两个相对微坑50可经安置使得中心距棒条48的边缘间隔大约0.075mm。在一些实施例中,相对微坑50的中心可经安置隔开大约0.3mm。图8A到8D展示可用于实践本发明的教示的微坑50及引脚44的各种实施例。
图9A及9B是展示以塑料62封装且并入有本发明的教示的经囊封IC装置60的等角视图的图式。引脚46的底部表面52及热垫64已电镀有锡以产生呈扁平无引线封装的IC装置60,所述封装具有高可润湿侧面以供在回流焊接中使用,从而提供经改进焊料连接,例如图1中接触引脚14b处所展示的焊料连接。如所展示,IC装置60可包括四方扁平无引线封装。在其它实施例中,IC装置60可包括双扁平无引线封装,或其中引线并不大大延伸超出封装的边缘且经配置以将IC表面安装到PCB的任何其它封装(例如,任何微引线框架(MLT))。
如图9A及9B中所展示,微坑50连同引脚46的底部表面52一起被电镀。尽管引脚46的经暴露面54可包含某种裸铜,但微坑50在IC装置60的边上提供经电镀表面。微坑50的经电镀表面提供增加的可润湿侧面,且因此可在IC装置60与PCB之间提供经改进电连接及/或机械连接。在替代实施例中,可能根本不对微坑50及/或底部表面52进行电镀。在这些实施例中,微坑50的物理形状可允许焊料流到微坑50中且甚至不存在电镀的情况下改进连接。
图10A及10B是展示通过回流焊接工艺附接到PCB 64且以塑料62囊封的IC装置60的等角视图的图式。如图10A及10B中所展示,IC装置60的引脚46通过焊珠68连接到PCB 64上的引线66。与图5B中所展示的IC装置10相比来说,焊珠68沿着引脚46的经暴露面54向上延伸。焊珠68沿着经暴露面54向上的较大物理程度可在IC装置60与PCB 64之间提供经改进机械连接及/或电连接。
图11是图解说明用于制造呈并入有本发明的教示的扁平无引线封装的IC装置的实例性方法100的流程图。方法100可提供用于将IC装置安装到PCB的经改进连接。
步骤102可包含对在其上已产生IC装置的半导体晶片进行背面研磨。典型的半导体或IC制造可使用大约750μm厚的晶片。此厚度可在高温处理期间提供抵抗翘曲的稳定性。相比来说,一旦完成IC装置,大约50μm到75μm的厚度可为优选的。背面研磨(也称作背面精磨(backlap)或晶片薄化)可从晶片的与IC装置相对的侧移除材料。
步骤104可包含锯切及/或切割晶片以将IC芯片与形成于同一晶片上的其它组件分离。
步骤106可包含将IC芯片(或裸片)安装于引线框架的中心支撑结构上。所述IC裸片可通过胶合或任何其它适当方法由中心支撑结构附接。
在步骤108处,IC裸片可连接到从引线框架的中心支撑结构延伸的个别引脚。在一些实施例中,裸片或IC装置上的垫及/或接触点可通过接合(例如,线接合、球接合、楔接合、柔性接合、热超声接合或任何其它适当接合技术)连接到相应引脚。
在步骤110处,可囊封IC装置及引线框架以形成组合件。在一些实施例中,此包含模制到塑料壳中。如果使用塑料模制,那么可后接后模制固化步骤以使外壳硬化及/或凝固。
步骤112可包含化学去毛边及电镀工艺以覆盖连接引脚的经暴露底部区域。如上文所论述,电镀的步骤可以不并入于本发明的所有实施例中。在包含电镀的实施例中,还可对引脚中的微坑进行电镀。
步骤114可包含执行隔离切割。隔离切割可包含锯切穿过每一封装的引脚以将所述引脚彼此电隔离。
一旦完成隔离切割,步骤116可包含对IC装置的测试及标记。可通过更改各种步骤的次序、添加步骤及/或消除步骤来改变方法100。举例来说,可在不执行隔离切割及/或对IC装置的测试的情况下根据本发明的教示产生扁平无引线IC封装。所属领域的技术人员将能够在不背离本发明的范围或意图的情况下使用这些教示开发替代方法。
步骤118可包含单个化切割以在其中引线框架42是引线框架42a、42b等的矩阵40的一部分的实施例中将IC装置与棒条、引线框架及/或其它附近IC装置分离。单个化切割可穿过引线框架42的引脚46的微坑50进行。
图12图解说明可用于步骤118处的单个化切割的一个实施例的工艺。图12是展示沿着以塑料模制件62囊封的棒条48切割穿过引脚46的锯70的等角视图的示意图。在步骤116中的任何测试及/或标记之后,穿过全封装进行宽度wf的单个化切割,如图11中所展示。锯切宽度ws足够宽以与微坑50相交,但并非如此宽以致完全消除微坑50。因此,在完成单个化切割之后,微坑50的剩余部分将从如图9A及9B中所展示的引脚46的底部面52延伸到经暴露面54。
步骤120可包含将经分离IC装置60(在其封装中)附接到PCB 64或其它安装装置。在一些实施例中,IC装置可使用回流焊接工艺附接到PCB。图10A及10B展示已安装于印刷电路板上且通过回流焊接工艺附接的IC装置的引脚区域的等角视图。本发明提供的微坑50可将可润湿侧面或圆角高度增加到占60%且满足(举例来说)汽车消费者要求。因此,根据本发明的各种教示,可改进扁平无引线装置的“可润湿侧面”且通过回流焊接工艺制作的每一焊接接点可在视觉及/或性能测试期间提供经改进性能及/或增加的接受率。
相比来说,用于扁平无引线集成电路封装的常规制造工艺可使引脚连接不具有用于回流焊接工艺的充分可润湿表面。即便在将封装与引线框架或矩阵分离之前电镀经暴露引脚,典型工艺中所使用的最后锯切步骤也仅留下引脚的经暴露面上的裸铜。
Claims (20)
1.一种用于集成电路IC装置的引线框架,所述引线框架包括:
中心支撑结构,其用于安装IC芯片;
多个引脚,其从所述中心支撑结构延伸;及
棒条,其连接所述多个引脚、远离所述中心支撑结构;
其中所述多个引脚中的每一引脚包含微坑。
2.根据权利要求1所述的引线框架,其进一步包括邻近所述棒条安置的每一引脚的所述微坑。
3.根据权利要求1或2所述的引线框架,其中所述引线框架是用于四方扁平无引线IC封装。
4.根据权利要求3所述的引线框架,其中所述引线框架是用于双扁平无引线IC封装。
5.根据前述权利要求中任一权利要求所述的引线框架,其中所述引线框架包含用于制造多个IC装置的排列成矩阵的大量中心支撑结构。
6.根据前述权利要求中任一权利要求所述的引线框架,其中所述引线框架包含用于制造多个IC装置的排列成矩阵的大量中心支撑结构;且
其中每一微坑从所述棒条的第一侧延伸到所述棒条的第二侧。
7.根据前述权利要求中任一权利要求所述的引线框架,其中每一微坑是以方形形状蚀刻到所述相应引脚中。
8.根据前述权利要求中任一权利要求所述的引线框架,其中每一微坑是以各边具有大约0.14mm的长度的方形形状蚀刻到所述相应引脚中。
9.根据前述权利要求中任一权利要求所述的引线框架,其中每一微坑被蚀刻到为所述相应引脚的全高度的大约一半的深度。
10.一种用于制造呈扁平无引线封装的集成电路IC装置的方法,所述方法包括:
将IC芯片安装到引线框架的中心支撑结构上,所述引线框架包含:
所述中心支撑结构;
多个引脚,其从所述中心支撑结构延伸;及
棒条,其连接所述多个引脚、远离所述中心支撑结构;
其中所述多个引脚中的每一引脚包含微坑;
将所述IC芯片接合到所述多个引脚中的至少一些引脚;
囊封所述引线框架及经接合IC芯片,从而形成IC封装;及
通过在与所述多个引脚的所述微坑相交的一组切割线处锯切穿过所述经囊封引线框架而切割所述IC封装以使其摆脱所述棒条,从而暴露所述多个引脚中的每一者的端面且留下所述微坑的一部分,所述部分从所述IC封装的底部表面延伸到具有所述引脚的所述经暴露端面的侧表面。
11.根据权利要求10所述的方法,其进一步包括:
执行隔离切割以在不将所述IC封装与所述引线框架分离的情况下将所述IC封装的个别引脚隔离;及
在所述隔离切割之后执行对所述经隔离个别引脚的电路测试。
12.根据权利要求10或11所述的方法,其进一步包括使用线接合将所述IC芯片接合到所述多个引脚中的至少一些引脚。
13.根据权利要求12所述的方法,其进一步包括在切割所述IC封装以使其摆脱所述棒条之前,对包含所述微坑的所述多个引脚在所述IC封装的底部表面上的经暴露部分进行电镀。
14.一种用于将呈扁平无引线封装的集成电路IC装置安装到印刷电路板PCB上的方法,所述方法包括:
将IC芯片安装到引线框架的中心支撑结构上,所述引线框架包含:
所述中心支撑结构;
多个引脚,其从所述中心支撑结构延伸;及
棒条,其连接所述多个引脚、远离所述中心支撑结构;
其中所述多个引脚中的每一引脚包含微坑;
将所述IC芯片接合到所述多个引脚中的至少一些引脚;
囊封所述引线框架及经接合IC芯片,从而形成IC封装;及
通过在与所述多个引脚的所述微坑相交的一组切割线处锯切穿过所述经囊封引线框架而切割所述IC封装以使其摆脱所述棒条,从而暴露所述多个引脚中的每一者的端面且留下所述微坑的一部分,所述部分从所述IC封装的底部表面延伸到具有所述引脚的所述经暴露端面的侧表面;及
使用回流焊接方法将所述IC封装的所述多个引脚连结到所述PCB上的相应接触点以将所述扁平无引线IC封装附接到所述PCB。
15.根据权利要求14所述的方法,其进一步包括:
执行隔离切割以在不将所述IC封装与所述棒条分离的情况下将所述IC封装的个别引脚隔离;及
在所述隔离切割之后执行对所述经隔离个别引脚的电路测试。
16.根据权利要求14或15所述的方法,其进一步包括使用线接合将所述IC芯片接合到所述多个引脚中的至少一些引脚。
17.根据权利要求16所述的方法,其中所述回流焊接工艺提供占所述引脚的所述经暴露表面的大约60%的圆角高度。
18.根据前述权利要求14到17中任一权利要求所述的方法,其进一步包括在切割所述IC封装以使其摆脱所述棒条之前,对包含所述微坑的所述多个引脚在所述IC封装的底部表面上的经暴露部分进行电镀。
19.一种呈扁平无引线封装的集成电路IC装置,其包括:
IC芯片,其安装到引线框架的中心支撑结构上且与所述引线框架囊封在一起以形成具有底部面及四个边的IC封装;
一组引脚,其具有沿着所述IC封装的所述四个边的下部边缘暴露的面;及
微坑,其位于所述组引脚中的每一者中,沿着所述IC封装的所述底部面的周界安置且延伸到所述组引脚的所述经暴露面中;
其中至少面对包含所述微坑的所述多个引脚中的每一者的经暴露部分的底部是经电镀的。
20.根据权利要求19所述的IC装置,其中所述多个引脚以大约60%的圆角高度附接到印刷电路板。
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US9847283B1 (en) * | 2016-11-06 | 2017-12-19 | Nexperia B.V. | Semiconductor device with wettable corner leads |
WO2018133060A1 (zh) * | 2017-01-22 | 2018-07-26 | 深圳市汇顶科技股份有限公司 | 一种指纹芯片封装及加工方法 |
US20220181239A1 (en) * | 2019-03-08 | 2022-06-09 | Siliconix Incorporated | Semiconductor package having side wall plating |
CN113035722A (zh) | 2019-12-24 | 2021-06-25 | 维谢综合半导体有限责任公司 | 具有选择性模制的用于镀覆的封装工艺 |
CN113035721A (zh) | 2019-12-24 | 2021-06-25 | 维谢综合半导体有限责任公司 | 用于侧壁镀覆导电膜的封装工艺 |
CN114171485A (zh) | 2020-09-10 | 2022-03-11 | 恩智浦美国有限公司 | Qfn半导体封装、半导体封装及引线框架 |
US20220359352A1 (en) * | 2021-05-10 | 2022-11-10 | Texas Instruments Incorporated | Electronic package with concave lead end faces |
US11569154B2 (en) * | 2021-05-27 | 2023-01-31 | Texas Instruments Incorporated | Interdigitated outward and inward bent leads for packaged electronic device |
CN114423176B (zh) * | 2021-12-28 | 2023-12-01 | 芯讯通无线科技(上海)有限公司 | 包括侧面pin脚的pcb板及其制造方法、通信模组 |
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US7125747B2 (en) * | 2004-06-23 | 2006-10-24 | Advanced Semiconductor Engineering, Inc. | Process for manufacturing leadless semiconductor packages including an electrical test in a matrix of a leadless leadframe |
US20100133693A1 (en) * | 2008-12-03 | 2010-06-03 | Texas Instruments Incorporated | Semiconductor Package Leads Having Grooved Contact Areas |
CN102237280A (zh) * | 2010-04-23 | 2011-11-09 | 飞思卡尔半导体公司 | 包括锯切分割的组装半导体器件的方法 |
US20120205811A1 (en) * | 2011-02-14 | 2012-08-16 | Byung Tai Do | Integrated circuit packaging system with terminal locks and method of manufacture thereof |
US8841758B2 (en) * | 2012-06-29 | 2014-09-23 | Freescale Semiconductor, Inc. | Semiconductor device package and method of manufacture |
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