CN101535366B - 光反射用热固化性树脂组合物及其制造方法、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 - Google Patents
光反射用热固化性树脂组合物及其制造方法、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 Download PDFInfo
- Publication number
- CN101535366B CN101535366B CN2007800424632A CN200780042463A CN101535366B CN 101535366 B CN101535366 B CN 101535366B CN 2007800424632 A CN2007800424632 A CN 2007800424632A CN 200780042463 A CN200780042463 A CN 200780042463A CN 101535366 B CN101535366 B CN 101535366B
- Authority
- CN
- China
- Prior art keywords
- optical semiconductor
- resin composition
- luminous reflectance
- hot curing
- curing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 230000003287 optical effect Effects 0.000 title claims abstract description 91
- 239000011342 resin composition Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 title claims description 90
- 239000011347 resin Substances 0.000 title claims description 90
- 239000000758 substrate Substances 0.000 title abstract description 21
- 238000000465 moulding Methods 0.000 claims abstract description 62
- 239000012463 white pigment Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 64
- 239000003822 epoxy resin Substances 0.000 claims description 48
- 229920000647 polyepoxide Polymers 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 35
- 238000012546 transfer Methods 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000004593 Epoxy Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 125000003700 epoxy group Chemical group 0.000 claims description 9
- 238000009998 heat setting Methods 0.000 claims description 8
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001723 curing Methods 0.000 abstract description 86
- 238000013007 heat curing Methods 0.000 abstract description 4
- 238000001721 transfer moulding Methods 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 40
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 36
- -1 hexanaphthene tricarboxylic acid Chemical class 0.000 description 33
- 150000001875 compounds Chemical class 0.000 description 24
- 238000004898 kneading Methods 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 239000003921 oil Substances 0.000 description 20
- 150000008065 acid anhydrides Chemical class 0.000 description 13
- 150000008064 anhydrides Chemical group 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 11
- SMEDVXJKKOXLCP-UHFFFAOYSA-N cyamelide Chemical group N=C1OC(=N)OC(=N)O1 SMEDVXJKKOXLCP-UHFFFAOYSA-N 0.000 description 11
- 229920001241 Cyamelide Polymers 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 10
- 230000008719 thickening Effects 0.000 description 10
- 239000000155 melt Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 230000004927 fusion Effects 0.000 description 7
- 239000011256 inorganic filler Substances 0.000 description 7
- 229910003475 inorganic filler Inorganic materials 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 6
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Natural products OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920003987 resole Polymers 0.000 description 6
- 235000010724 Wisteria floribunda Nutrition 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 3
- 239000001095 magnesium carbonate Substances 0.000 description 3
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 3
- 229960001708 magnesium carbonate Drugs 0.000 description 3
- 235000014380 magnesium carbonate Nutrition 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- MNAHQWDCXOHBHK-UHFFFAOYSA-N 1-phenylpropane-1,1-diol Chemical compound CCC(O)(O)C1=CC=CC=C1 MNAHQWDCXOHBHK-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 206010051246 Photodermatosis Diseases 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 230000001404 mediated effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 230000008845 photoaging Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N 1,3-Dimethylbenzene Natural products CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical compound COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- JGAOCGFZZBDROL-UHFFFAOYSA-N 3-(2,4,6-trioxo-1,3,5-triazinan-1-yl)propanoic acid Chemical class OC(=O)CCN1C(=O)NC(=O)NC1=O JGAOCGFZZBDROL-UHFFFAOYSA-N 0.000 description 1
- XUKLTPZEKXTPBT-UHFFFAOYSA-N 3-oxatricyclo[5.2.1.01,5]dec-5-ene-2,4-dione Chemical compound C1CC2C=C3C(=O)OC(=O)C13C2 XUKLTPZEKXTPBT-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- RMDKEBZUCHXUER-UHFFFAOYSA-N 4-methylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C=CC1(C)C2 RMDKEBZUCHXUER-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 240000007762 Ficus drupacea Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical compound CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical compound [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 150000002194 fatty esters Chemical class 0.000 description 1
- 150000002195 fatty ethers Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical group [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 1
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-methyl phenol Natural products CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- RINCXYDBBGOEEQ-UHFFFAOYSA-N succinic anhydride Chemical compound O=C1CCC(=O)O1 RINCXYDBBGOEEQ-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Led Device Packages (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110309960.2A CN102408541B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006309052 | 2006-11-15 | ||
JP309052/2006 | 2006-11-15 | ||
JP2007098354 | 2007-04-04 | ||
JP098354/2007 | 2007-04-04 | ||
PCT/JP2007/072069 WO2008059856A1 (en) | 2006-11-15 | 2007-11-14 | Heat curable resin composition for light reflection, process for producing the resin composition, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition |
Related Child Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210230392.1A Division CN102751430B (zh) | 2006-11-15 | 2007-11-14 | 光半导体装置及其制造方法 |
CN201110309960.2A Division CN102408541B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 |
CN201110309972.5A Division CN102516712B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、用该组合物的光半导体元件搭载用基板及其光半导体装置 |
CN201110309724.0A Division CN102408542B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 |
CN201110309968.9A Division CN102408543B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、用该组合物的光半导体元件搭载用基板及其光半导体装置 |
CN201110309967.4A Division CN102408544B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物、用该组合物的光半导体元件搭载用基板及其光半导体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101535366A CN101535366A (zh) | 2009-09-16 |
CN101535366B true CN101535366B (zh) | 2012-08-08 |
Family
ID=39604652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800424632A Active CN101535366B (zh) | 2006-11-15 | 2007-11-14 | 光反射用热固化性树脂组合物及其制造方法、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 |
Country Status (2)
Country | Link |
---|---|
JP (8) | JP2008144127A (zh) |
CN (1) | CN101535366B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102408541B (zh) | 2006-11-15 | 2016-10-05 | 日立化成株式会社 | 光反射用热固化性树脂组合物、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 |
JP2008144127A (ja) * | 2006-11-15 | 2008-06-26 | Hitachi Chem Co Ltd | 熱硬化性光反射用樹脂組成物、ならびにこれを用いた光半導体素子搭載用基板、光半導体装置およびこれらの製造方法 |
JP5421546B2 (ja) * | 2007-07-05 | 2014-02-19 | 日立化成株式会社 | 熱硬化性光反射用樹脂組成物、並びにその樹脂組成物を用いた光半導体素子搭載用基板及び光半導体装置 |
JP6133004B2 (ja) * | 2009-03-31 | 2017-05-24 | 日立化成株式会社 | 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 |
CN103249480B (zh) * | 2010-12-06 | 2015-07-08 | 阿尔卑斯电气株式会社 | 微芯片的制造方法 |
JP5919903B2 (ja) * | 2011-03-31 | 2016-05-18 | 三菱化学株式会社 | 半導体発光装置用パッケージ及び該パッケージを有してなる半導体発光装置並びにそれらの製造方法 |
JP5775408B2 (ja) * | 2011-09-29 | 2015-09-09 | 積水化学工業株式会社 | 光半導体装置用白色硬化性材料、光半導体装置用白色硬化性材料の製造方法、光半導体装置用成形体及び光半導体装置 |
JP5902823B2 (ja) | 2011-11-17 | 2016-04-13 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
JP2013153144A (ja) * | 2011-12-27 | 2013-08-08 | Panasonic Corp | Ledリフレクター用不飽和ポリエステル樹脂組成物とそれを用いた粒状物、タブレット、ledリフレクター、表面実装型led発光装置、led照明器具 |
CN103325889A (zh) * | 2012-03-19 | 2013-09-25 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
JP2013206895A (ja) * | 2012-03-27 | 2013-10-07 | Shin Etsu Chem Co Ltd | 光学半導体装置用基板とその製造方法、及び光学半導体装置とその製造方法 |
JP6021416B2 (ja) * | 2012-05-01 | 2016-11-09 | 日東電工株式会社 | 光半導体装置用リフレクタ付リードフレームおよびそれを用いた光半導体装置並びにその製造方法 |
JP5831424B2 (ja) * | 2012-10-17 | 2015-12-09 | 日立化成株式会社 | 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 |
JP2014095051A (ja) * | 2012-11-12 | 2014-05-22 | Shin Etsu Chem Co Ltd | 熱硬化性エポキシ樹脂組成物、該組成物を用いたled用リフレクター及びled装置 |
JP5864031B1 (ja) * | 2014-07-24 | 2016-02-17 | 日本化薬株式会社 | 多価カルボン酸およびそれを含有する多価カルボン酸組成物、エポキシ樹脂組成物、熱硬化性樹脂組成物、それらの硬化物並びに光半導体装置 |
JP6038236B2 (ja) * | 2015-06-17 | 2016-12-07 | 積水化学工業株式会社 | 光半導体装置用白色硬化性材料、及び光半導体装置用白色硬化性材料の製造方法 |
JP6580948B2 (ja) * | 2015-11-04 | 2019-09-25 | 旭化成株式会社 | リフレクター及び光半導体装置 |
JP7121620B2 (ja) | 2018-09-27 | 2022-08-18 | ダイハツ工業株式会社 | 組付装置 |
CN112391034B (zh) * | 2019-08-13 | 2022-12-09 | 北京科化新材料科技有限公司 | 一种环氧树脂复合材料及其制备方法与应用 |
CN111211209B (zh) * | 2020-01-16 | 2021-09-28 | 江西新正耀光学研究院有限公司 | 紫外光发光二极管及其制作方法 |
CN111380814A (zh) * | 2020-04-26 | 2020-07-07 | 天津德高化成新材料股份有限公司 | 一种用于led封装的光学环氧塑封料及其墨色测量方法 |
CN115011967B (zh) * | 2022-08-05 | 2022-11-04 | 山东祺裕新材料有限公司 | 一种低氨氮酸洗缓蚀剂及其使用方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2780449B2 (ja) * | 1990-06-28 | 1998-07-30 | 日立化成工業株式会社 | 半導体封止用エポキシ樹脂成形材料の製造方法 |
IT1246761B (it) * | 1990-07-02 | 1994-11-26 | Pirelli Cavi Spa | Cavi a fibre ottiche e relativi componenti contenenti una miscela omogenea per proteggere le fibre ottiche dall' idrogeno e relativa miscela barriera omogenea |
JPH05239321A (ja) * | 1992-02-28 | 1993-09-17 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JPH0685325A (ja) * | 1992-08-28 | 1994-03-25 | Stanley Electric Co Ltd | Ledの製造方法 |
JPH06209024A (ja) * | 1993-01-11 | 1994-07-26 | Hitachi Chem Co Ltd | 樹脂封止型半導体装置の製造法 |
JPH08104796A (ja) * | 1994-10-05 | 1996-04-23 | Hitachi Ltd | 半導体封止用樹脂組成物及び該組成物で封止された半導体装置 |
JP3618133B2 (ja) * | 1995-01-18 | 2005-02-09 | 日東電工株式会社 | 光半導体装置 |
JPH08245214A (ja) * | 1995-03-07 | 1996-09-24 | Denki Kagaku Kogyo Kk | シリカ微粉末、その製造法及び半導体封止用エポキシ樹脂組成物 |
JPH10292094A (ja) * | 1997-02-20 | 1998-11-04 | Toshiba Corp | エポキシ樹脂組成物、これを用いた樹脂封止型半導体装置、エポキシ樹脂成形材料、およびエポキシ樹脂複合タブレット |
JP3165078B2 (ja) * | 1997-07-24 | 2001-05-14 | 協和化成株式会社 | 表面実装部品の製造方法 |
JPH1143546A (ja) * | 1997-07-30 | 1999-02-16 | Toray Ind Inc | クロスプリプレグおよびハニカム構造体 |
JP3294803B2 (ja) * | 1997-08-18 | 2002-06-24 | 株式会社日本触媒 | 熱硬化性樹脂封止材 |
JP2000319633A (ja) * | 1999-05-12 | 2000-11-21 | C I Kasei Co Ltd | エポキシ樹脂系封止材料用シリカ系充填材 |
JP4606530B2 (ja) * | 1999-05-14 | 2011-01-05 | 株式会社朝日ラバー | シート部材およびそれを用いた発光装置 |
JP3632507B2 (ja) * | 1999-07-06 | 2005-03-23 | 日亜化学工業株式会社 | 発光装置 |
JP3627592B2 (ja) * | 1999-10-08 | 2005-03-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2001118969A (ja) * | 1999-10-22 | 2001-04-27 | Hitachi Chem Co Ltd | 封止用成形材料、その製造方法、及び電子部品装置 |
JP3483817B2 (ja) * | 1999-12-01 | 2004-01-06 | 電気化学工業株式会社 | 球状無機質粉末及びその用途 |
JP3820886B2 (ja) * | 2001-01-17 | 2006-09-13 | 松下電工株式会社 | 光半導体用エポキシ樹脂組成物及び光半導体装置 |
MY131962A (en) * | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP3417415B1 (ja) * | 2001-01-24 | 2003-06-16 | 日亜化学工業株式会社 | エポキシ樹脂組成物、その製造方法、それを用いた光半導体素子 |
JP2003124523A (ja) * | 2001-10-19 | 2003-04-25 | Rohm Co Ltd | チップ型半導体発光装置 |
JP4250949B2 (ja) * | 2001-11-01 | 2009-04-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US7145182B2 (en) * | 2003-09-12 | 2006-12-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Integrated emitter devices having beam divergence reducing encapsulation layer |
JP2005089607A (ja) * | 2003-09-17 | 2005-04-07 | Sumitomo Bakelite Co Ltd | 光半導体封止用エポキシ樹脂組成物及び光半導体装置 |
JP4774201B2 (ja) * | 2003-10-08 | 2011-09-14 | 日亜化学工業株式会社 | パッケージ成形体及び半導体装置 |
JP4460968B2 (ja) * | 2004-07-27 | 2010-05-12 | 株式会社アドマテックス | 樹脂組成物の製造方法 |
JP5060707B2 (ja) * | 2004-11-10 | 2012-10-31 | 日立化成工業株式会社 | 光反射用熱硬化性樹脂組成物 |
CN101283016B (zh) * | 2005-08-04 | 2011-05-11 | 信越化学工业株式会社 | 热固性环氧树脂组合物及半导体装置 |
WO2007015426A1 (ja) * | 2005-08-04 | 2007-02-08 | Nichia Corporation | 発光装置及びその製造方法並びに成形体及び封止部材 |
JP2007114227A (ja) * | 2005-10-17 | 2007-05-10 | Seiko Epson Corp | 液体現像剤および液体現像剤の製造方法 |
JP2008144127A (ja) * | 2006-11-15 | 2008-06-26 | Hitachi Chem Co Ltd | 熱硬化性光反射用樹脂組成物、ならびにこれを用いた光半導体素子搭載用基板、光半導体装置およびこれらの製造方法 |
-
2007
- 2007-04-24 JP JP2007114227A patent/JP2008144127A/ja not_active Withdrawn
- 2007-11-14 CN CN2007800424632A patent/CN101535366B/zh active Active
-
2012
- 2012-03-16 JP JP2012060714A patent/JP5778605B2/ja active Active
-
2014
- 2014-05-19 JP JP2014103155A patent/JP2014195106A/ja active Pending
-
2016
- 2016-08-09 JP JP2016156303A patent/JP2017005260A/ja active Pending
- 2016-08-09 JP JP2016156302A patent/JP6306652B2/ja active Active
- 2016-08-09 JP JP2016156301A patent/JP6322237B2/ja active Active
-
2017
- 2017-08-30 JP JP2017165729A patent/JP2017214599A/ja not_active Withdrawn
-
2019
- 2019-09-11 JP JP2019165447A patent/JP2020023699A/ja active Pending
Non-Patent Citations (2)
Title |
---|
JP特开2005-89710A 2005.04.07 |
JP特开2006-140207A 2006.06.01 |
Also Published As
Publication number | Publication date |
---|---|
JP2008144127A (ja) | 2008-06-26 |
JP5778605B2 (ja) | 2015-09-16 |
JP6322237B2 (ja) | 2018-05-09 |
JP6306652B2 (ja) | 2018-04-04 |
JP2017214599A (ja) | 2017-12-07 |
CN101535366A (zh) | 2009-09-16 |
JP2014195106A (ja) | 2014-10-09 |
JP2012138610A (ja) | 2012-07-19 |
JP2017020036A (ja) | 2017-01-26 |
JP2017002316A (ja) | 2017-01-05 |
JP2020023699A (ja) | 2020-02-13 |
JP2017005260A (ja) | 2017-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101535366B (zh) | 光反射用热固化性树脂组合物及其制造方法、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 | |
CN102408542B (zh) | 光反射用热固化性树脂组合物、及使用了所述树脂组合物的光半导体元件搭载用基板及光半导体装置 | |
CN101268559B (zh) | 发光装置及其制造方法以及成形体及密封构件 | |
CN102276958B (zh) | 用于光学用途的环氧树脂组合物、使用其的光学部件以及使用其获得的光半导体装置 | |
JP2013030648A (ja) | 表面実装型発光装置 | |
JP5942445B2 (ja) | 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 | |
US20140066543A1 (en) | Thermosetting light-reflective resin composition, method for preparing the same, optical semiconductor element-mounted reflector produced therefrom, and optical semiconductor device comprising the same | |
JP2017103470A (ja) | 光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 | |
CN103562290A (zh) | 热固型光反射用树脂组合物及其制备方法、利用其制备的光半导体元件搭载用反射板以及包括其的光半导体装置 | |
CN105122484A (zh) | 光半导体反射器用环氧树脂组合物、光半导体装置用热固性树脂组合物及使用其得到的光半导体装置用引线框、封装型光半导体元件以及光半导体装置 | |
CN102408544B (zh) | 光反射用热固化性树脂组合物、用该组合物的光半导体元件搭载用基板及其光半导体装置 | |
JP6322929B2 (ja) | 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Showa electrical materials Co.,Ltd. Address before: Tokyo, Japan Patentee before: HITACHI CHEMICAL Co.,Ltd. Address after: Tokyo, Japan Patentee after: HITACHI CHEMICAL Co.,Ltd. Address before: Tokyo, Japan Patentee before: HITACHI CHEMICAL Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Lishennoco Co.,Ltd. Address before: Tokyo, Japan Patentee before: Showa electrical materials Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |