CN101412910B - 发光装置用荧光体粒子集合体、发光装置、及液晶显示用背光装置 - Google Patents

发光装置用荧光体粒子集合体、发光装置、及液晶显示用背光装置 Download PDF

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CN101412910B
CN101412910B CN2008101769788A CN200810176978A CN101412910B CN 101412910 B CN101412910 B CN 101412910B CN 2008101769788 A CN2008101769788 A CN 2008101769788A CN 200810176978 A CN200810176978 A CN 200810176978A CN 101412910 B CN101412910 B CN 101412910B
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light
emitting device
phosphor particles
particle diameter
emitting
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CN101412910A (zh
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增田昌嗣
寺岛贤二
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Denka Co Ltd
GE Phosphors Technology LLC
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Sharp Corp
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Abstract

本发明提供一种发光装置用荧光体粒子集合体，其特征在于，包含具有相互不同发光峰波长的多种荧光体粒子，且与具有相对短的发光峰波长的种类的荧光体粒子相比，具有相对长的发光峰波长的种类的荧光体粒子具有相对大的中值粒径。本发明还提供了一种发光装置，其中，包含可以射出在430nm至480nm范围内具有峰波长的1次光的氮化镓系半导体发光元件和吸收该1次光并发出与所述1次光相比具有长的峰波长的2次光的波长变换部，所述波长变换部由含有上述荧光体粒子集合体的单一树脂层构成且覆盖所述半导体发光元件。本发明还提供了一种包括所述发光装置的液晶显示用背光装置。

Description

发光装置用荧光体粒子集合体、发光装置、及液晶显示用背光装置
技术领域
本发明涉及用于发光装置的荧光体粒子集合体的改善，更具体地说，涉及利用包含具有不同荧光峰波长的多种荧光物质的荧光体粒子集合体的发光装置的发光效率及演色性(或颜色重现性)的改善。
背景技术
半导体发光元件和荧光物质组合而成的白色系发光装置作为期待低消耗电力、小型、高亮度、广范围的颜色重现性及高演色性的新一代发光装置备受瞩目，其研究开发正在活跃地进行。
在该白色系发光装置中，作为从半导体发光元件发出的1次光，通常使用具有从紫外线的长波长侧到蓝色的范围、即大约在380～480nm的范围内的波长的光。此外，还提出了利用适于将该1次光转变成2次光用途的各种类的荧光物质的波长变换部。
目前，作为这种白色系发光装置，主要使用的是发蓝色光的半导体发光元件(峰波长在460nm前后)和经该蓝色光激发发出黄色光的被3价铈所激活的(Y，Gd)3(Al，Ga)5O12荧光物质或被2价铕激活的2(Sr，Ba，Ca)O·SiO2荧光物质的组合。
但是，目前的情况极端恶劣，与这些现有白色系发光装置相关的平均演色评价指数(Ra)都在70左右，尤其是表示红色的视度的特殊演色评价指数(R9)在-40左右。即，这些现有白色系发光装置极其不适合用于一般照明用光源。平均演色评价指数和特殊演色评价指数的定义和意义在JIS中已有规定。
此外，现有白色系发光装置中，NTSC比的颜色重现性在70％左右是不充分的。而且，近年来，小型LCD(液晶显示装置)也要求颜色重现性的提高(例如，手机的LCD)。需要说明的是，所说的NTSC比表示NTSC(National Television System Committee)制定的红、绿及蓝的各色的XYZ表色系色度图中的色度坐标(x，y)分别为：红(0.670，0.330)、绿(0.210，0.710)，及蓝(0.140，0.080)，相对于通过连接这些红、绿及蓝的色度坐标得到的三角形的面积的比率。
即，半导体发光元件和荧光物质组合而成的白色系发光装置，在作为照明用光源使用的情况下，当务之急是其演色性的改善。另外，将该白色系发光装置用于中型及小型的LCD用背光时，其颜色重现性(NTSC比)的改善也是当务之急。
着眼于组合有半导体发光元件和荧光物质的白色系发光装置的演色性的发明公开于例如日本专利特开2002—060747号公报。关于该专利文献中的白色系发光装置，记载了在主要使用SrGa2S4:Eu2+作为绿色荧光物质且使用SrS：Eu2+作为红色系荧光物质的情况下，可以得到70～90的平均演色评价指数(Ra)。
但是，这些硫代镓盐(SrGa2S4:Eu2+)和硫化物(SrS:Eu2+)具有化学性质不稳定，尤其是硫化物在紫外线照射下容易分解的性质。
日本专利特开2003—321675号公报中的白色系发光装置中利用发黄色光的荧光物质YAG:Ce和发红色光的氮化物荧光物质(通式：LxMyN(2/3x+4/3y)：Z)如Ca1.97Si5N8:Eu0.03，由此所得到的平均演色评价指数(Ra)为75～95，进而通过提高与红色相关的特殊演色性(R9)的值还可以得到带红色的白色光。
但是，在发蓝色光的半导体发光元件和黄色荧光物质YAG:Ce及由2价Eu激活的作为氮化物的红色荧光物质Ca1.97Si5N8:Eu0.03的组合中，存在以下问题：由于绿色区域的发光成分很少，因此难以稳定地得到高的平均演色评价指数(Ra)，并且发光装置的亮度也会由于加入红色荧光物质(Ca1.97Si5N8:Eu0.03)而大大降低。
着眼于LCD的颜色重现性(NTSC比)的发明公开于例如日本特开2003—121838号公报。该专利文献中叙述了背光光源在505nm～535nm的波长范围内有波峰的情况，作为该光源利用的绿色荧光物质的激活剂，包括铕、钨、锡、锑及锰中的任一种的情况，而且具体的表示了发明的实施例中的作为绿色荧光物质的MgGa2O4:Mn及Zn2SiO4:Mn。
但是，在半导体发光元件的发光峰波长为430nm～480nm范围内的情况下，并不是所有含有铕、钨、锡、锑及锰中的任一种的荧光物质都适宜优选。更具体地说，在日本专利特开2003—121838号公报的实施例所示的MgGa2O4:Mn及Zn2SiO4:Mn中，利用430nm～480nm波长范围内的激发光不能得到高的发光效率。
日本专利特开2004-287323号公报中，记载有可以利用将红色发光LED(发光二级管)芯片、绿色发光LED芯片和蓝色发光LED芯片形成1组装的RGB(红绿蓝)—LED、3波长型荧光管、紫外光LED+RGB荧光体、有机EL光源等作为LCD用背光。但该专利文献中并没有具体地记述涉及适合用于蓝色光的激活的红色荧光物质或绿色荧光物质。
美国专利第7345317号说明书中叙述了如下主旨，通过将发光装置中包含的荧光体粒子限定为具有20μm以下粒径及5μm以下中值粒径(d50)，则可以得到不受温度及湿度变化的影响的稳定颜色的光。在此，所说的中值粒径是指粒径分布在50％位置的粒径。美国专利第6812500号说明书中记载有如下主旨，发光装置包含的无机发光物质的平均粒径(mean particle size)大约为10μm。另外，在日本专利特开2004—210921号公报中记载有如下主旨，发光装置中包含的荧光体粒子的粒径优选在1～20μm范围内，更优选在2～8μm范围内。(这种情况下的粒径是通过空气透过法得到的值)。但是，在美国专利第7345317号说明书、美国专利第6812500号说明书及日本专利特开2004—210921号公报的任一个中都没有涉及发光装置包含的多种荧光体粒子的相互间的粒径关系的记述。
此外，日本特开2007—049114号公报中记载有：波长变换部包含的多种荧光体粒子的至少1种具有能够吸收从其他的至少一种中放射出的光的吸收区域；越是放射出波长相对长的光的荧光体粒子种类越分布在与半导体发光元件接近的一侧；红色系荧光体粒子是用通式(MI1-aEua)MIISiN3表示的2价铕激活氮化物荧光体粒子，其也可吸收从绿色荧光体粒子和蓝色荧光体粒子发出的绿色光(波长在520nm附近)和蓝色光(波长在450nm附近)而发红色的光；多种荧光体粒子相互间具有不同的中值粒径；将含有多种荧光体粒子的液体树脂静置规定时间，使中值粒径大的荧光体粒子种类沉降以使在半导体发光元件附近分布密度变高。而且，在实施例16中记载有透光性树脂包含有大粒径荧光体粒子、中粒径荧光体粒子及小粒径荧光体粒子，这些粒径相互不同的荧光体粒子分离成大致层状，红色系、绿色系及蓝色系的荧光体粒子的中值粒径分别为13μm、9.5μm及6.5μm。
但是，在该专利文献中，多种荧光体粒子中的相互不同的中值粒径只是在实施例16的公示中有记载，对于各种荧光体粒子相互的关系而言，没有提高任何考虑实际应用尤其是亮度及操作性等而进行中值粒径的控制的内容。
发明内容
本发明是鉴于上述背景技术情况而开发的，其目的在于，提供一种发光装置。对在发光装置的波长变化部包含的多种荧光体粒子中，使用由2价铕来激发的氮化物荧光物质((MI1-aEua)MIISiN3)作为红色系荧光体粒子的情况下的技术课题进行了充分调查研究，结果，通过控制多种荧光体粒子的各自的中值粒径(在体积基准粒度分布曲线上积算值为50％的位置的粒径值：与通过空气透过法等得到的平均粒径不同)，可以得到高效率、高演色性及颜色重现性(NTSC比)优异的发光装置。
本发明的发光装置用荧光体粒子集合体，其特征在于，包含具有相互不同发光峰波长的多种荧光体粒子，且与具有相对短的发光峰波长的种类的荧光体粒子相比，具有相对长的发光峰波长的种类的荧光体粒子具有相对大的中值粒径。
就该发光装置用荧光体粒子集合体而言，除包含用(MI1-aEua)MIISiN3表示并具有中值粒径R1的2价铕激活氮化物红色系荧光体粒子之外，还含有以下粒子中的一种以上，
为Eub Sic Ald Oe Nf表示的β型赛伦且具有中值粒径G1的2价铕激活氮氧化物绿色系荧光体粒子、为MIIIgEuhSiiAljOkNl表示的α型赛伦且具有中值粒径Y1的2价铕激活氮氧化物黄色系荧光体粒子、以及用MIV3(MV1-mCem)2(SiO4)3表示并具有中值粒径G2的3价铈激活硅酸盐绿色系荧光体粒子，
其中，MI表示Mg、Ca、Sr及Ba中的至少一种元素，MII表示Al、Ga、In、Sc、Y、La、Gd及Lu中的至少一种元素，MIII表示Li、Na、K、Rb、Cs、Mg、Ca、Sr及Ba中的至少一种元素，MIV表示Mg、Ca、Sr及Ba中的至少一种元素，而且，MV表示Al、Ga、In、Sc、Y、La、Gd及Lu中的至少一种元素，
满足0.001≤a≤0.10、0.005≤b≤0.4、c+d＝12、e+f＝16、0<g≤3.0、0.005≤h≤0.4、i+j＝12、k+1＝16、及0.005≤m≤0.5的条件，特别优选还满足1.3≤R1/G1≤4.0、1.3≤R1/Y1≤4.0及1.3≤R1/G2≤4.0的条件。
此外，本发明的发光装置包含可以射出在430nm至480nm范围内具有峰波长的1次光的氮化镓系半导体发光元件和吸收该1次光并发出与所述1次光相比具有长的峰波长的2次光的波长变换部，所述波长变换部由含有权利要求1的荧光体粒子集合体的单一树脂层构成且覆盖所述半导体发光元件。
需要说明的是，作为本发明中所说的2价铕激活氮化物红色系荧光物质，具体可以列举：(Ca0.98Eu002)AlSiN3、(Ca0.94Mg0.05Eu0.01)(Al0.99In0.01)SiN3、(Ca0.94Mg0.05Eu0.01)(Al0.99Ga0.01)SiN3、(Ca0.97Sr0.01Eu0.02)(Al0.99Ga0.01)SiN3、(Ca0.84Sr0.15Eu0.01)AlSiN3、(Ca0.995Eu0.005)AlSiN3、(Ca0.989Sr0.010Eu0.001)(Al0.985Ga0.015)SiN3、和(Ca0.93Mg0.02Eu0.05)AlSiN3等，当然并不限于此。
作为本发明的β型赛伦的2价铕激活氮氧化物绿色系荧光物质，具体可以列举：Eu0.05Si11.50Al0.50O0.05N15.95、Eu0.10Si11.00Al1.00O0.10N15.90、Eu0.30Si9.80Al2.20O0.30N15.70、Eu0.15Si10.00Al2.00O0.20N15.80、Eu0.01Si11.60Al0.40O0.01N15.99、和Eu0.005Si11.70Al0.30O0.03N15.97等，当然并不限于此。
作为本发明的α型赛伦的2价铕激活氮氧化物黄色系荧光物质，具体可以列举：Ca0.75Eu0.01Si9.75Al2.25O0.76N15.24、Ca0.50Li0.10Eu0.01Si11.50Al0.50O0.20N15.80、Ca1.00Sr0.10Eu0.20Si10.00Al2.00O0.30N15.70、和Ca0.35Li0.20Eu0.05Si10.60Al1.40O1.25N14.75等，当然并不限于此。
进一步，作为本发明的3价铈激活硅酸盐绿色系荧光物质，具体可以列举：Ca3(Sc0.85Ce0.15)2(SiO4)3、(Ca0.9Mg0.1)3(Sc0.70Ga0.15Ce0.15)2(SiO4)3、(Ca0.9Mg0.1)3(Sc0.80Ce0.20)2(SiO4)3、(Ca0.85Mg0.15)3(Sc0.50Y0.20Ce0.30)2(SiO4)3、Ca3(Sc0.98In0.01Ce0.01)2(SiO4)3、(Ca0.99Sr0.01)3(Sc0.84In0.10Y0.01Ce0.05)2(SiO4)3、和(Ca0.95Mg0.05)3(Sc0.80Ce0.20)2(SiO4)3等，当然并不限于此。
该发明的上述内容及其他目的、特征、局面及优点由联系附图来理解的关于该发明的以下的详细说明，应该会明白。
附图说明
图1是表示本发明的一实施例中制作的发光装置的示意剖面图。
图2是表示可用于本发明中的氮化物红色系荧光物质的激发光谱分布图的一例的示图。
图3是表示图2所示的氮化物红色系荧光物质的发光光谱分布图的一例的示图。
具体实施方式
实施例(1)
作为本发明的实施例1，制作如图1的示意剖面图所示的发光装置。该发光装置10在树脂杯(resin cup)30内包括：发出1次光的半导体发光元件11、和吸收1次光的至少一部分并发出具有该1次光的波长以上的波长的2次光的波长变换部13。半导体发光元件11被放置在阴极端子14上，并通过金线12与阴级端子14和阳极端子15电连接。波长变换部13包括分布在透光性树脂20内的两种荧光体粒子21和22。
作为半导体发光元件11，利用具有450nm的发光峰波长的氮化镓(GaN)系半导体发光元件。波长变换部13中，使用中值粒径R1为15.8μm、组成为(Ca0.99Eu0.01AlSiN3的红色系荧光体粒子22和中值粒径G1为5.1μm、组成为Eu0.05Si11.50Al0.05O0.05N15.95(β型赛伦)的绿色系荧光体粒子21。另外，为了求出荧光体粒子的中值粒径，作为粒度分布测定装置，可以使用堀场制作所制造的LA-920。
图2表示在本实施例1中使用的红色系荧光物质的激发光谱分布，即，在该图所示的图中，横轴代表光的波长(nm)，纵轴代表光的相对强度(任意单位)。而且，图中的曲线代表荧光物质的激发光谱分布。而且，与图2类似的图3表示在本实施例1中使用的红色系荧光物质的发光光谱分布。
在本实施例1中，将85％质量的绿色系荧光体粒子和15％质量的红色系荧光体粒子混合，将该混合粒子即荧光粒子集合体按指定的比例分散于有机硅树脂20中制作波长变换部13。将该有机硅树脂20填充于树脂杯30中制作波长变换部13时，与具有小的中值粒径的绿色系荧光体粒子21相比，可以使具有大的中值粒径的红色系荧光体粒子22在半导体发光元件11附近以高的分布密度而沉淀。
对于这样制作而成的包含波长变换部13的本实施例中的发光装置10，评价其特性(亮度)。另外，在进行其特性评价时，在前向电流(1F)为20mA下点亮半导体发光元件11，测定来自发光装置10的光输出(光电流)。
另一方面，再制作作为比较例1的发光装置。与实施例1相比，比较例1的制作只有以下不同，即，比较例1的发光装置将相同组成的红色系荧光体粒子的中值粒径R1变更为10.5μm，将同组成的绿色系荧光体粒子的中值粒径G1变更为22.1μm。
将评价如上所述制作而成的实施例1和比较例1的发光装置的特性的结果示于表1。
表1
 
亮度(相对值) Tc—duv
实施例1 108.1％ 7600k—0.001
比较例1 100.0％ 7600k—0.001
如表1所示，可以判定，与比较例1的发光装置相比，本实施例1的发光装置的特性(亮度)优异。此外，在表1中，Tc表示发光装置的发光色的相关色温度，duv表示来自发光色度点离黑体辐射轨迹的偏差(从uv色度图(CIE1960均等色空间)上的发光色的色度点到黑体辐射轨迹的垂直线的长度)。duv在0.01以下时，就会和通常的钨丝灯泡一样，感觉是没有着色的颜色。此外，在7000K的黑体辐射温度下，因和太阳的色温度相近而可以得到自然的白色。
(实施例2)
在本发明的实施例2中，与实施例1类似也制作发光装置。在本实施例2中，作为半导体发光元件11，利用具有460nm的峰波长的氮化镓(GaN)系半导体发光元件。
本实施例2中的波长变换部13，利用中值粒径R1为12.6μm、组成为(Ca0.96Sr0.03Eu0.01)AlSiN3的红色系荧光体粒子和中值粒径G2为6.0μm、组成为(Ca0.98Mg0.02)3(Sc0.90Ce0.10)2(SiO4)3的绿色系荧光体粒子。
本实施例2中，将74.9％质量的绿色系荧光体粒子和25.1％质量的红色系荧光体粒子混合，并将该混合粒子即荧光体粒子集合体按指定的比例分散于有机硅树脂20中，制作波长变换部13。
对于这样制得的包含波长变换部13的本实施例2的发光装置10，也在与实施例1同样的条件下评价其特性(亮度)。
另一方面，再制作作为比较例2的发光装置。与实施例2相比，比较例2的发光装置的制作只有以下不同，即，比较例2的发光装置将相同组成的红色系荧光体粒子的中值粒径R1变更为7.6μm，将相同组成的绿色系荧光体粒子的中值粒径G2变更为14.3μm。
将评价如上所述制作而成的实施例2和比较例2的发光装置的特性的结果示于表2。
表2
 
亮度(相对值) Tc—duv
实施例2 107.5％ 6600k+0.003
比较例2 100.0％ 6600k+0.003
如表2所示，可以判定，与比较例2得到的发光装置相比，由本实施例2得到的发光装置的特性(亮度)也优异。
(实施例3～8)
与实施例1和2及比较例1和2的情况类似，再制备实施例3～8及比较例3～8的发光装置，将各自的发光装置的特性评价结果示于表3。在这些实施例3～8中，波长变换部13包含的荧光体粒子的种类和中值粒径进行了种种变更。而且，在各比较例中，为了对比，与实施例相比只变更了中值粒径。
将评价如上所述制作而成的实施例3～8和比较例3～8的发光装置的特性的结果示于表3。在表3中，R1、Y1、G1以及G2表示荧光体粒子种类，同时也表示中值粒径。发光成分(λp)表示半导体发光元件11的发光峰波长。
Figure G2008101769788D00091
如表3所示，可以判定，与比较例3～8得到的发光装置分别比较，实施例3～8得到的发光装置的特性(亮度)优异。
从以上实施例1～8及比较例1～8可以判定，各种荧光体粒子间的中值粒径比率为：1.3≦R1/G1≦4.0；1.3≦R1/Y1≦4.0；另外，在满足1.3≦R1/G2≦4.0的条件的情况下，可以得到发光装置的良好特性。另一方面，当它们的中值粒径的比率小于1.3时，发光装置的亮度的提高不充分而不实用。而当它们的中值粒径的比率超过4.0时，包含荧光体粒子21、22的透光性树脂20的模型有时容易发生喷嘴堵塞等现象。
关于2价铕激活氮化物红色系荧光体粒子的中值粒径R1，优选7μm≦R1≦19μm的范围、更优选10μm至16μm的范围。当R1小于7μm时，G1、G2或Y1必须小于5.4μm，从而，有绿色系荧光体粒子及黄色系荧光体粒子的结晶成长容易变得不充分且得不到充分的亮度的倾向。另一方面，R1超过19μm时，在氮化物红色系荧光体粒子的结晶成长中粗大粒子的生成较显著，这在实际应用中并不是上策。
关于氮氧化物绿色系荧光体粒子、氮氧化物黄色系荧光体粒子及硅酸盐绿色系荧光体粒子的各自的中值粒径G1、Y1及G2而言，如果上述的条件成立，就可以得到发光装置的良好特性，但如果考虑到发光装置的亮度，如上所述，优选5.4μm以上。
此外，如果发光装置中的半导体发光元件11的发光峰波长超过480nm，就会使发光装置的白色光的亮度减弱而变得不实用。另一方面，半导体发光元件11的发光峰波长小于430nm时，蓝色光成分的作用变小，演色性变差，这种情况也不实用。
另外，在氮化物红色系荧光发光物质中，MII为3价金属元素，可以优先从Al、Ga及In中选择至少一种，但是从提高发光装置的亮度的效果的观点来看，最优选A1。在硅酸盐绿色系荧光物质中，MV是3价金属元素，可以从Ga、In、Sc及Y中选择至少一种，但是从提高发光装置的亮度的效果的观点来看，最优选Sc。
以上的各个实施例只列举了两种荧光体粒子的组合，但不用说，也可以利用三种以上的荧光体粒子的组合。
如上所述，根据本发明，波长变换部利用对中值粒径进行了控制的氮化物红色系荧光体粒子、氮氧化物绿色系荧光体粒子、氮氧化物黄色系荧光体粒子或硅酸盐绿色系荧光体粒子的组合，由此，可以提供有效地吸收来自半导体发光元件的光、能够高效且高演色性或颜色重现性(NTSC比)优异的放射白色光的发光装置。
至此详细说明了本发明，但这只是示例，本发明并不限定于此，发明的范围通过权利要求的范围的解释应该能很清楚地理解。

Claims (7)

1.一种发光装置用荧光体粒子集合体，其特征在于，
除包含用(MI1-aEua)MIISiN3表示并具有中值粒径R1的2价铕激活氮化物红色系荧光体粒子之外，还含有以下粒子中的一种以上，
为Eub Sic Ald Oe Nf表示的β型赛伦且具有中值粒径G1的2价铕激活氮氧化物绿色系荧光体粒子、为MIIIgEuhSiiAljOkNl表示的α型赛伦且具有中值粒径Y1的2价铕激活氮氧化物黄色系荧光体粒子、以及用MIV3(MVl-mCem)2(SiO4)3表示并具有中值粒径G2的3价铈激活硅酸盐绿色系荧光体粒子，
其中，MI表示Mg、Ca、Sr及Ba中的至少一种元素，MII表示Al、Ga、In、Sc、Y、La、Gd及Lu中的至少一种元素，MIII表示Li、Na、K、Rb、Cs、Mg、Ca、Sr及Ba中的至少一种元素，MIV表示Mg、Ca、Sr及Ba中的至少一种元素，而且，MV表示Al、Ga、In、Sc、Y、La、Gd及Lu中的至少一种元素，
满足0.001≤a≤0.10、0.005≤b≤0.4、c+d＝12、e+f＝16、0＜g≤3.0、0.005≤h≤0.4、i+j＝12、k+l＝16、及0.005≤m≤0.5的条件，
还满足1.3≤R1/G1≤4.0、1.3≤R1/Y1≤4.0及1.3≤R1/G2≤4.0的条件。
2.根据权利要求1所述的发光装置用荧光体粒子集合体，其特征在于，MII为Al、Ga及In中的至少一种元素。
3.根据权利要求1所述的发光装置用荧光体粒子集合体，其特征在于，MV为Ga、In、Sc及Y中的至少一种元素。
4.根据权利要求1所述的发光装置用荧光体粒子集合体，其特征在于，7μm≤R1≤19μm。
5.一种发光装置，其特征在于，包含可以射出在430nm至480nm范围内具有峰波长的1次光的氮化镓系半导体发光元件和吸收该1次光并发出与所述1次光相比具有长的峰波长的2次光的波长变换部，
所述波长变换部由含有权利要求1或2的荧光体粒子集合体的单一树脂层构成且覆盖所述半导体发光元件。
6.根据权利要求5所述的发光装置，其特征在于，在所述树脂层内，与位于距所述半导体发光元件远的位置相比距所述半导体元件更近的位置处，具有相对长的荧光峰波长和相对大的中值粒径的种类的所述荧光体粒子的分布密度被提高。
7.一种液晶显示用背光装置，其特征在于，包括权利要求5的发光装置。
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