CN101311205A - Cmp研磨剂以及衬底的研磨方法 - Google Patents

Cmp研磨剂以及衬底的研磨方法 Download PDF

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Publication number
CN101311205A
CN101311205A CNA2008101292389A CN200810129238A CN101311205A CN 101311205 A CN101311205 A CN 101311205A CN A2008101292389 A CNA2008101292389 A CN A2008101292389A CN 200810129238 A CN200810129238 A CN 200810129238A CN 101311205 A CN101311205 A CN 101311205A
Authority
CN
China
Prior art keywords
abrasive
cmp
water
mentioned
soluble polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008101292389A
Other languages
English (en)
Chinese (zh)
Inventor
深泽正人
小山直之
仓田靖
芳贺浩二
阿久津利明
大槻裕人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN101311205A publication Critical patent/CN101311205A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2008101292389A 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法 Pending CN101311205A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004216039 2004-07-23
JP2004216039 2004-07-23

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800235561A Division CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

Publications (1)

Publication Number Publication Date
CN101311205A true CN101311205A (zh) 2008-11-26

Family

ID=35785268

Family Applications (3)

Application Number Title Priority Date Filing Date
CNA2008101292389A Pending CN101311205A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CNA2005800235561A Pending CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CN201110430594.6A Expired - Lifetime CN102585765B (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
CNA2005800235561A Pending CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CN201110430594.6A Expired - Lifetime CN102585765B (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

Country Status (7)

Country Link
US (1) US9293344B2 (enExample)
EP (1) EP1796152B1 (enExample)
JP (3) JPWO2006009160A1 (enExample)
KR (1) KR100856171B1 (enExample)
CN (3) CN101311205A (enExample)
TW (1) TWI287040B (enExample)
WO (1) WO2006009160A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104170065A (zh) * 2012-03-14 2014-11-26 日立化成株式会社 研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
CN105593330A (zh) * 2013-09-30 2016-05-18 福吉米株式会社 研磨用组合物及其制造方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101126124B1 (ko) * 2005-05-30 2012-03-30 주식회사 동진쎄미켐 연마 평탄도를 향상시킨 산화 세륨 슬러리 조성물
US8524111B2 (en) 2006-01-31 2013-09-03 Hitachi Chemical Company, Ltd. CMP abrasive slurry for polishing insulation film, polishing method, and semiconductor electronic part polished by the polishing method
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
WO2013061771A1 (ja) * 2011-10-24 2013-05-02 株式会社 フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法及び基板の製造方法
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
SG11202001013YA (en) * 2017-08-14 2020-03-30 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set and polishing method
CN111149193B (zh) 2017-09-29 2023-09-08 株式会社力森诺科 研磨液、研磨液套剂及研磨方法
JP6837958B2 (ja) * 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11549034B2 (en) 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
WO2020170331A1 (ja) 2019-02-19 2020-08-27 日立化成株式会社 研磨液及び研磨方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69420378T2 (de) * 1993-12-23 1999-12-30 Nitto Denko Corp., Ibaraki Verfahren zur Herstellung einer wässrigen Dispersion eines Acrylpolymeren, Acrylpolymer so hergestellt, und druckempfindlicher Klebstoff, der dieses Polymer enthält
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3915042B2 (ja) 1997-02-18 2007-05-16 三井化学株式会社 研磨材及び研磨方法
EP1566421B1 (en) 1998-12-25 2014-12-10 Hitachi Chemical Company, Ltd. CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4247587B2 (ja) 1999-06-23 2009-04-02 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
JP4224659B2 (ja) 1999-06-23 2009-02-18 Ｊｓｒ株式会社 半導体部品用洗浄剤
JP4134458B2 (ja) 1999-06-23 2008-08-20 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法
JP4171858B2 (ja) 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
US6440856B1 (en) * 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2001107089A (ja) 1999-10-07 2001-04-17 Jsr Corp 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6638143B2 (en) * 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001226666A (ja) 2000-02-15 2001-08-21 Hitachi Ltd 研磨砥粒と研磨液及びその研磨方法並びに半導体装置の製造方法
JP2001300285A (ja) 2000-04-18 2001-10-30 Sanyo Chem Ind Ltd 研磨用砥粒分散剤及び研磨用スラリー
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
CN1746255B (zh) * 2001-02-20 2010-11-10 日立化成工业株式会社 抛光剂及基片的抛光方法
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP5017574B2 (ja) 2001-05-25 2012-09-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸化セリウム研磨剤及び基板の製造方法
JP4972829B2 (ja) 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP2003303792A (ja) 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP4076012B2 (ja) * 2002-04-10 2008-04-16 株式会社日本触媒 化学機械研磨用水系分散体
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20080254717A1 (en) * 2004-09-28 2008-10-16 Hitachi Chemical Co., Ltd. Cmp Polishing Slurry and Method of Polishing Substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104170065A (zh) * 2012-03-14 2014-11-26 日立化成株式会社 研磨方法
US9299573B2 (en) 2012-03-14 2016-03-29 Hitachi Chemical Company, Ltd. Polishing method
CN105593330A (zh) * 2013-09-30 2016-05-18 福吉米株式会社 研磨用组合物及其制造方法
CN105593330B (zh) * 2013-09-30 2018-06-19 福吉米株式会社 研磨用组合物及其制造方法
US10227518B2 (en) 2013-09-30 2019-03-12 Fujimi Incorporated Polishing composition and method for producing same
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

Also Published As

Publication number Publication date
JP5509114B2 (ja) 2014-06-04
TWI287040B (en) 2007-09-21
WO2006009160A1 (ja) 2006-01-26
JP2011103498A (ja) 2011-05-26
JPWO2006009160A1 (ja) 2008-05-01
TW200609337A (en) 2006-03-16
CN102585765B (zh) 2015-01-21
KR100856171B1 (ko) 2008-09-03
CN1985361A (zh) 2007-06-20
EP1796152A4 (en) 2008-12-03
US9293344B2 (en) 2016-03-22
CN102585765A (zh) 2012-07-18
JP5655879B2 (ja) 2015-01-21
US20080003925A1 (en) 2008-01-03
EP1796152A1 (en) 2007-06-13
EP1796152B1 (en) 2019-02-27
KR20070026843A (ko) 2007-03-08
JP2013149992A (ja) 2013-08-01

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Application publication date: 20081126