CN101300685B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101300685B
CN101300685B CN2006800412984A CN200680041298A CN101300685B CN 101300685 B CN101300685 B CN 101300685B CN 2006800412984 A CN2006800412984 A CN 2006800412984A CN 200680041298 A CN200680041298 A CN 200680041298A CN 101300685 B CN101300685 B CN 101300685B
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CN
China
Prior art keywords
layer
low concentration
anode
buried layer
isolation
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Expired - Fee Related
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CN2006800412984A
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English (en)
Chinese (zh)
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CN101300685A (zh
Inventor
荒井千广
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2006800412984A 2005-09-12 2006-08-10 半导体装置及其制造方法 Expired - Fee Related CN101300685B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP263366/2005 2005-09-12
JP2005263366A JP4618064B2 (ja) 2005-09-12 2005-09-12 半導体装置およびその製造方法
PCT/JP2006/315837 WO2007032165A1 (ja) 2005-09-12 2006-08-10 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN101300685A CN101300685A (zh) 2008-11-05
CN101300685B true CN101300685B (zh) 2010-05-19

Family

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Family Applications (1)

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CN2006800412984A Expired - Fee Related CN101300685B (zh) 2005-09-12 2006-08-10 半导体装置及其制造方法

Country Status (7)

Country Link
US (1) US7928511B2 (https=)
EP (1) EP1933390A4 (https=)
JP (1) JP4618064B2 (https=)
KR (1) KR101248084B1 (https=)
CN (1) CN101300685B (https=)
TW (1) TW200715594A (https=)
WO (1) WO2007032165A1 (https=)

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CN101904017A (zh) * 2008-02-26 2010-12-01 硅绝缘体技术有限公司 制造半导体衬底的方法
CN103915525A (zh) * 2014-04-08 2014-07-09 上海电力学院 一种提高光电转化性能的红外焦平面探测器
CN107039425B (zh) * 2017-03-29 2018-07-13 湖北京邦科技有限公司 一种半导体光电倍增器件
FR3071356B1 (fr) * 2017-09-21 2020-11-13 Safran Electronics & Defense Dispositif de detection et de localisation comprenant une pluralite de photodiodes
DE102018105752B4 (de) * 2018-03-13 2019-10-24 X-Fab Semiconductor Foundries Gmbh Elektrisch modulierte Fotodiode und Verfahren zu deren Herstellung
KR102017125B1 (ko) * 2018-03-28 2019-09-03 주식회사 포셈 포토다이오드의 제조방법
CN108573989B (zh) * 2018-04-28 2021-09-14 中国科学院半导体研究所 硅基雪崩光电探测器阵列及其制作方法
JP7039411B2 (ja) 2018-07-20 2022-03-22 株式会社東芝 光検出器、光検出システム、ライダー装置及び車
US11018168B2 (en) * 2018-09-20 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with improved timing resolution and photon detection probability
JP7222851B2 (ja) 2019-08-29 2023-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7153001B2 (ja) 2019-09-18 2022-10-13 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
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CN117954378A (zh) * 2024-03-26 2024-04-30 粤芯半导体技术股份有限公司 一种半导体器件及其制备方法

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Also Published As

Publication number Publication date
TWI307968B (https=) 2009-03-21
WO2007032165A1 (ja) 2007-03-22
EP1933390A1 (en) 2008-06-18
US7928511B2 (en) 2011-04-19
US20100155867A1 (en) 2010-06-24
EP1933390A4 (en) 2012-05-23
KR101248084B1 (ko) 2013-03-27
JP2007080905A (ja) 2007-03-29
JP4618064B2 (ja) 2011-01-26
TW200715594A (en) 2007-04-16
KR20080053464A (ko) 2008-06-13
CN101300685A (zh) 2008-11-05

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