CN101256948A - 半导体元件的制造方法 - Google Patents
半导体元件的制造方法 Download PDFInfo
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- CN101256948A CN101256948A CNA2008100096193A CN200810009619A CN101256948A CN 101256948 A CN101256948 A CN 101256948A CN A2008100096193 A CNA2008100096193 A CN A2008100096193A CN 200810009619 A CN200810009619 A CN 200810009619A CN 101256948 A CN101256948 A CN 101256948A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007049087 | 2007-02-28 | ||
JP2007049087 | 2007-02-28 | ||
JP2007-049087 | 2007-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101256948A true CN101256948A (zh) | 2008-09-03 |
CN101256948B CN101256948B (zh) | 2012-10-24 |
Family
ID=39670262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100096193A Active CN101256948B (zh) | 2007-02-28 | 2008-02-13 | 半导体元件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7807554B2 (zh) |
JP (1) | JP5703536B2 (zh) |
CN (1) | CN101256948B (zh) |
DE (1) | DE102008003953A1 (zh) |
Cited By (12)
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CN102097306A (zh) * | 2009-12-09 | 2011-06-15 | Abb技术有限公司 | 使用激光退火选择激活注入掺杂剂的半导体器件制作方法 |
CN102163551A (zh) * | 2010-02-12 | 2011-08-24 | 富士电机控股株式会社 | 反向阻断型绝缘栅双极晶体管制造方法 |
CN102315107A (zh) * | 2010-06-24 | 2012-01-11 | 富士电机株式会社 | 制造半导体器件的方法 |
CN102637621A (zh) * | 2011-02-08 | 2012-08-15 | 富士电机株式会社 | 用于半导体装置的组装夹具及用于半导体组装的组装方法 |
CN102668037A (zh) * | 2009-11-06 | 2012-09-12 | 株式会社日立制作所 | 半导体器件的制造方法 |
CN102859660A (zh) * | 2010-12-07 | 2013-01-02 | 住友电气工业株式会社 | 制造半导体器件的方法 |
CN103119698A (zh) * | 2010-09-30 | 2013-05-22 | 富士电机株式会社 | 半导体装置的制造方法 |
CN103329255A (zh) * | 2011-01-18 | 2013-09-25 | 富士电机株式会社 | 反向阻断型半导体元件的制造方法 |
WO2014206300A1 (zh) * | 2013-06-28 | 2014-12-31 | 无锡华润上华半导体有限公司 | 绝缘栅双极晶体管的制造方法 |
CN104508796A (zh) * | 2012-08-08 | 2015-04-08 | 住友重机械工业株式会社 | 半导体装置的制造方法 |
CN107500297A (zh) * | 2017-09-21 | 2017-12-22 | 亚洲硅业(青海)有限公司 | 一种颗粒硅籽晶制备系统及方法 |
CN109196622A (zh) * | 2016-05-31 | 2019-01-11 | 欧洲激光系统和解决方案公司 | 深结电子器件及其制造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5203667B2 (ja) * | 2007-10-16 | 2013-06-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP5839768B2 (ja) * | 2008-05-21 | 2016-01-06 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5668270B2 (ja) * | 2008-12-11 | 2015-02-12 | 富士電機株式会社 | 半導体素子の製造方法 |
JP2010212530A (ja) * | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子の製造方法 |
JP5455598B2 (ja) * | 2009-05-07 | 2014-03-26 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP5565134B2 (ja) * | 2010-06-24 | 2014-08-06 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5641965B2 (ja) * | 2011-02-09 | 2014-12-17 | 住友重機械工業株式会社 | レーザアニール方法及びレーザアニール装置 |
JP6004765B2 (ja) * | 2012-06-13 | 2016-10-12 | 住友重機械工業株式会社 | 半導体装置の製造方法及びレーザアニール装置 |
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JPH04174517A (ja) * | 1990-11-07 | 1992-06-22 | Canon Inc | ダイヤモンド半導体の製造方法 |
JPH0677155A (ja) * | 1992-08-24 | 1994-03-18 | Sony Corp | 半導体基板の熱処理方法 |
JPH0697014A (ja) * | 1992-09-14 | 1994-04-08 | Fujitsu Ltd | ウエハ及びその作成方法 |
TW425637B (en) * | 1993-01-18 | 2001-03-11 | Semiconductor Energy Lab | Method of fabricating mis semiconductor device |
JP3437863B2 (ja) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
JP3329200B2 (ja) * | 1996-08-21 | 2002-09-30 | 株式会社日立製作所 | 半導体装置の製造方法および装置 |
US5847428A (en) * | 1996-12-06 | 1998-12-08 | Advanced Micro Devices, Inc. | Integrated circuit gate conductor which uses layered spacers to produce a graded junction |
EP1097481B1 (de) | 1998-07-17 | 2004-03-31 | Infineon Technologies AG | Leistungshalbleiterbauelement für hohe sperrspannungen |
JP4446509B2 (ja) * | 1999-04-26 | 2010-04-07 | 株式会社ルネサステクノロジ | 半導体装置 |
US6455362B1 (en) * | 2000-08-22 | 2002-09-24 | Micron Technology, Inc. | Double LDD devices for improved dram refresh |
US6365476B1 (en) * | 2000-10-27 | 2002-04-02 | Ultratech Stepper, Inc. | Laser thermal process for fabricating field-effect transistors |
JP4431925B2 (ja) * | 2000-11-30 | 2010-03-17 | 信越半導体株式会社 | 発光素子の製造方法 |
JP2002261279A (ja) * | 2001-02-27 | 2002-09-13 | Sanyo Electric Co Ltd | 半導体素子及びその製造方法 |
JP4967205B2 (ja) | 2001-08-09 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
JP4360077B2 (ja) | 2002-10-16 | 2009-11-11 | 富士電機デバイステクノロジー株式会社 | 半導体素子の製造方法 |
US7297617B2 (en) * | 2003-04-22 | 2007-11-20 | Micron Technology, Inc. | Method for controlling diffusion in semiconductor regions |
JP4727135B2 (ja) * | 2003-05-26 | 2011-07-20 | 富士フイルム株式会社 | レーザアニール装置 |
JP4590880B2 (ja) | 2003-06-24 | 2010-12-01 | 富士電機システムズ株式会社 | 半導体素子の製造方法 |
DE102004030268B4 (de) | 2003-06-24 | 2013-02-21 | Fuji Electric Co., Ltd | Verfahren zum Herstellen eines Halbleiterelements |
US7011998B1 (en) * | 2004-01-12 | 2006-03-14 | Advanced Micro Devices, Inc. | High voltage transistor scaling tilt ion implant method |
JP4770140B2 (ja) * | 2004-08-17 | 2011-09-14 | 富士電機株式会社 | 半導体素子の製造方法 |
JP2006351659A (ja) | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | 半導体装置の製造方法 |
WO2007015388A1 (ja) * | 2005-08-03 | 2007-02-08 | Phoeton Corp. | 半導体装置の製造方法および半導体装置の製造装置 |
-
2008
- 2008-01-11 DE DE102008003953A patent/DE102008003953A1/de not_active Ceased
- 2008-02-08 JP JP2008029258A patent/JP5703536B2/ja active Active
- 2008-02-13 CN CN2008100096193A patent/CN101256948B/zh active Active
- 2008-02-27 US US12/071,917 patent/US7807554B2/en active Active
Cited By (22)
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CN101256948B (zh) | 2012-10-24 |
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JP2008244446A (ja) | 2008-10-09 |
US7807554B2 (en) | 2010-10-05 |
JP5703536B2 (ja) | 2015-04-22 |
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