CN101236946B - 布线板和半导体器件 - Google Patents

布线板和半导体器件 Download PDF

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Publication number
CN101236946B
CN101236946B CN2008100032539A CN200810003253A CN101236946B CN 101236946 B CN101236946 B CN 101236946B CN 2008100032539 A CN2008100032539 A CN 2008100032539A CN 200810003253 A CN200810003253 A CN 200810003253A CN 101236946 B CN101236946 B CN 101236946B
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wiring board
barrier
semiconductor element
semiconductor device
underfill material
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Chinese (zh)
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CN101236946A (zh
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西村隆雄
合叶和之
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Socionext Inc
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Fujitsu Semiconductor Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07178—Means for aligning
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
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    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
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    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
CN2008100032539A 2007-01-30 2008-01-28 布线板和半导体器件 Active CN101236946B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007020081A JP5211493B2 (ja) 2007-01-30 2007-01-30 配線基板及び半導体装置
JP2007020081 2007-01-30
JP2007-020081 2007-01-30

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CN101236946A CN101236946A (zh) 2008-08-06
CN101236946B true CN101236946B (zh) 2011-12-07

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US (1) US7880276B2 (https=)
JP (1) JP5211493B2 (https=)
KR (1) KR100938408B1 (https=)
CN (1) CN101236946B (https=)
TW (1) TWI373835B (https=)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147665B2 (en) * 2007-11-06 2015-09-29 Fairchild Semiconductor Corporation High bond line thickness for semiconductor devices
JP4693852B2 (ja) * 2008-02-22 2011-06-01 パナソニック株式会社 半導体装置および半導体装置の製造方法
TW200943505A (en) * 2008-04-02 2009-10-16 Advanced Semiconductor Eng Reinforced package carrier and method for manufacturing the same as well as method for manufacturing semiconductor packages
JP4589428B2 (ja) * 2008-08-19 2010-12-01 アルプス電気株式会社 半導体チップモジュール
JP5058929B2 (ja) * 2008-09-29 2012-10-24 京セラＳｌｃテクノロジー株式会社 配線基板およびその製造方法
JP2010135347A (ja) * 2008-10-28 2010-06-17 Kyocer Slc Technologies Corp 配線基板およびその製造方法
US8441123B1 (en) * 2009-08-13 2013-05-14 Amkor Technology, Inc. Semiconductor device with metal dam and fabricating method
US8426959B2 (en) 2009-08-19 2013-04-23 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
JP5625340B2 (ja) * 2009-12-07 2014-11-19 富士通セミコンダクター株式会社 半導体装置とその製造方法
KR101046713B1 (ko) * 2009-12-17 2011-07-06 삼성전기주식회사 패키지 기판 및 패키지 기판의 제조방법
CN102332440A (zh) * 2010-07-12 2012-01-25 无锡华润安盛科技有限公司 一种倒装引线框及其封装结构
JP5587123B2 (ja) * 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101197846B1 (ko) 2010-11-30 2012-11-05 삼성전기주식회사 인쇄회로기판 어레이 및 이를 이용한 인쇄회로기판 플립칩 제조방법
FR2974234A1 (fr) * 2011-04-14 2012-10-19 St Microelectronics Grenoble 2 Assemblage de dispositifs a composants semiconducteurs empiles
KR101930689B1 (ko) 2012-05-25 2018-12-19 삼성전자주식회사 반도체 장치
JP6184061B2 (ja) * 2012-05-29 2017-08-23 キヤノン株式会社 積層型半導体装置及び電子機器
US9263377B2 (en) * 2012-11-08 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. POP structures with dams encircling air gaps and methods for forming the same
US9312193B2 (en) 2012-11-09 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Stress relief structures in package assemblies
US9497861B2 (en) * 2012-12-06 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package with interposers
CN203026500U (zh) * 2012-12-25 2013-06-26 华为终端有限公司 堆叠封装器件
JP6203503B2 (ja) * 2013-02-18 2017-09-27 スタンレー電気株式会社 半導体発光装置
US9627229B2 (en) * 2013-06-27 2017-04-18 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming trench and disposing semiconductor die over substrate to control outward flow of underfill material
US10192810B2 (en) 2013-06-28 2019-01-29 Intel Corporation Underfill material flow control for reduced die-to-die spacing in semiconductor packages
US9659891B2 (en) * 2013-09-09 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a boundary structure, a package on package structure, and a method of making
WO2015056430A1 (ja) * 2013-10-16 2015-04-23 パナソニック株式会社 半導体装置
US9503622B2 (en) * 2014-03-10 2016-11-22 Apple Inc. Preventing artifacts due to underfill in flip chip imager assembly
KR20160022603A (ko) * 2014-08-20 2016-03-02 삼성전기주식회사 플립칩 패키지 및 그 제조 방법
US9607959B2 (en) * 2014-08-27 2017-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging device having plural microstructures disposed proximate to die mounting region
CN105448852A (zh) * 2014-08-27 2016-03-30 群创光电股份有限公司 曲面电子装置
US9466632B2 (en) 2015-01-09 2016-10-11 Samsung Electronics Co., Ltd. Image sensor package and an image sensor module having the same
JP6407042B2 (ja) * 2015-01-22 2018-10-17 エイブリック株式会社 半導体装置及びその製造方法
KR102412611B1 (ko) 2015-08-03 2022-06-23 삼성전자주식회사 인쇄회로기판(pcb)과 그 제조방법, 및 그 pcb를 이용한 반도체 패키지 제조방법
JP2017175000A (ja) * 2016-03-24 2017-09-28 ローム株式会社 電子部品およびその製造方法、ならびに、インターポーザ
CN105704938B (zh) * 2016-03-28 2018-07-06 上海美维电子有限公司 线路板的加工方法
JP6770331B2 (ja) * 2016-05-02 2020-10-14 ローム株式会社 電子部品およびその製造方法
WO2018126542A1 (zh) * 2017-01-04 2018-07-12 华为技术有限公司 一种堆叠封装结构及终端
JP2018113414A (ja) * 2017-01-13 2018-07-19 新光電気工業株式会社 半導体装置とその製造方法
JP2018147974A (ja) * 2017-03-03 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、および半導体装置
US9978707B1 (en) * 2017-03-23 2018-05-22 Delphi Technologies, Inc. Electrical-device adhesive barrier
US10879194B2 (en) * 2017-05-25 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device package and method of manufacturing the same
TWI736780B (zh) * 2017-10-31 2021-08-21 台灣積體電路製造股份有限公司 晶片封裝及其形成方法
US11217460B2 (en) * 2018-05-09 2022-01-04 Texas Instruments Incorporated Multiple underfills for flip chip packages
JP7262743B2 (ja) * 2018-12-20 2023-04-24 三安ジャパンテクノロジー株式会社 弾性波デバイスを含むモジュール
KR20210022911A (ko) * 2019-08-21 2021-03-04 삼성전기주식회사 반도체 패키지
US11211263B2 (en) * 2019-11-19 2021-12-28 Qualcomm Incorporated Structure for arrayed partial molding of packages
JP2021103713A (ja) * 2019-12-25 2021-07-15 株式会社村田製作所 高周波モジュール及び通信装置
JP7603022B2 (ja) * 2020-01-14 2024-12-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN111508910B (zh) * 2020-04-21 2022-09-20 颀中科技（苏州）有限公司 一种覆晶封装结构及封装方法
CN113506781A (zh) * 2021-06-08 2021-10-15 日月光半导体制造股份有限公司 半导体结构及其制造方法
JP7750458B2 (ja) * 2021-06-30 2025-10-07 新光電気工業株式会社 半導体装置
CN113241338B (zh) * 2021-07-09 2021-10-19 东莞市春瑞电子科技有限公司 一种无引线预塑封半导体封装支架制备方法
US20230038411A1 (en) * 2021-08-03 2023-02-09 Texas Instruments Incorporated Semiconductor package with raised dam on clip or leadframe
KR20230060092A (ko) * 2021-10-27 2023-05-04 삼성전자주식회사 패키지 기판 및 이를 포함하는 반도체 패키지
JP7708643B2 (ja) * 2021-10-29 2025-07-15 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
US20250016912A1 (en) * 2021-11-30 2025-01-09 Kyocera Corporation Wiring board
CN115241179A (zh) * 2022-08-03 2022-10-25 麦斯塔微电子(深圳)有限公司 芯片封装结构
CN115206902B (zh) * 2022-09-16 2023-01-31 江苏长电科技股份有限公司 芯片封装结构及其制作方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5120678A (en) * 1990-11-05 1992-06-09 Motorola Inc. Electrical component package comprising polymer-reinforced solder bump interconnection
JP3541300B2 (ja) 1994-09-21 2004-07-07 イビデン株式会社 電子部品搭載装置
US5855821A (en) * 1995-12-22 1999-01-05 Johnson Matthey, Inc. Materials for semiconductor device assemblies
JP2973940B2 (ja) * 1996-09-20 1999-11-08 日本電気株式会社 素子の樹脂封止構造
US6020221A (en) * 1996-12-12 2000-02-01 Lsi Logic Corporation Process for manufacturing a semiconductor device having a stiffener member
US5942798A (en) * 1997-11-24 1999-08-24 Stmicroelectronics, Inc. Apparatus and method for automating the underfill of flip-chip devices
JP3367886B2 (ja) * 1998-01-20 2003-01-20 株式会社村田製作所 電子回路装置
JPH11354554A (ja) 1998-06-09 1999-12-24 Tokin Corp Ｉｃチップの封止方法およびｉｃカードの製造方法
US6048656A (en) * 1999-05-11 2000-04-11 Micron Technology, Inc. Void-free underfill of surface mounted chips
JP4362165B2 (ja) 1999-05-28 2009-11-11 イビデン株式会社 電子部品搭載装置
US6424033B1 (en) * 1999-08-31 2002-07-23 Micron Technology, Inc. Chip package with grease heat sink and method of making
US6498054B1 (en) * 2000-06-02 2002-12-24 Siliconware Precision Industries Co., Ltd. Method of underfilling a flip-chip semiconductor device
US6291264B1 (en) * 2000-07-31 2001-09-18 Siliconware Precision Industries Co., Ltd. Flip-chip package structure and method of fabricating the same
US6537482B1 (en) * 2000-08-08 2003-03-25 Micron Technology, Inc. Underfill and encapsulation of carrier substrate-mounted flip-chip components using stereolithography
JP2002093831A (ja) * 2000-09-14 2002-03-29 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
US6545869B2 (en) * 2001-01-17 2003-04-08 International Business Machines Corporation Adjusting fillet geometry to couple a heat spreader to a chip carrier
US6459144B1 (en) * 2001-03-02 2002-10-01 Siliconware Precision Industries Co., Ltd. Flip chip semiconductor package
JP4963148B2 (ja) * 2001-09-18 2012-06-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6762509B2 (en) * 2001-12-11 2004-07-13 Celerity Research Pte. Ltd. Flip-chip packaging method that treats an interconnect substrate to control stress created at edges of fill material
JP2004179576A (ja) * 2002-11-29 2004-06-24 Ngk Spark Plug Co Ltd 配線基板及びその製造方法
JP3997903B2 (ja) * 2002-11-29 2007-10-24 富士通株式会社 回路基板および半導体装置
JP2005175113A (ja) 2003-12-10 2005-06-30 Fdk Corp フリップチップ実装用プリント配線基板
US7015592B2 (en) * 2004-03-19 2006-03-21 Intel Corporation Marking on underfill
JP4415717B2 (ja) 2004-03-23 2010-02-17 ソニー株式会社 半導体装置及びその製造方法
JP2006140327A (ja) 2004-11-12 2006-06-01 Matsushita Electric Ind Co Ltd 配線基板およびこれを用いた電子部品の実装方法
JP4535969B2 (ja) * 2005-08-24 2010-09-01 新光電気工業株式会社 半導体装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2001-244384A 2001.09.07
JP特开2006-140327A 2006.06.01
JP特开平8-97535A 1996.04.12

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TWI373835B (en) 2012-10-01
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