CN101093812A - 具有双温度区的静电吸盘的衬底支架 - Google Patents

具有双温度区的静电吸盘的衬底支架 Download PDF

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Publication number
CN101093812A
CN101093812A CNA2007100980989A CN200710098098A CN101093812A CN 101093812 A CN101093812 A CN 101093812A CN A2007100980989 A CNA2007100980989 A CN A2007100980989A CN 200710098098 A CN200710098098 A CN 200710098098A CN 101093812 A CN101093812 A CN 101093812A
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CN
China
Prior art keywords
ceramic disk
binding ring
substrate
top surface
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100980989A
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English (en)
Chinese (zh)
Inventor
亚历山大·马特尤什金
丹尼斯·库索
西奥多洛斯·帕纳戈波洛斯
约翰·荷文
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38769279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101093812(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101093812A publication Critical patent/CN101093812A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CNA2007100980989A 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架 Pending CN101093812A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79601306P 2006-04-27 2006-04-27
US60/796,013 2006-04-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102067972A Division CN101887865B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架

Publications (1)

Publication Number Publication Date
CN101093812A true CN101093812A (zh) 2007-12-26

Family

ID=38769279

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201210033377.8A Expired - Fee Related CN102593031B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架
CN2007100976540A Expired - Fee Related CN101093811B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架
CN2010102067972A Expired - Fee Related CN101887865B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架
CNA2007100980989A Pending CN101093812A (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN201210033377.8A Expired - Fee Related CN102593031B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架
CN2007100976540A Expired - Fee Related CN101093811B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架
CN2010102067972A Expired - Fee Related CN101887865B (zh) 2006-04-27 2007-04-27 具有双温度区的静电吸盘的衬底支架

Country Status (4)

Country Link
JP (2) JP5069452B2 (ko)
KR (2) KR101380879B1 (ko)
CN (4) CN102593031B (ko)
TW (2) TWI357629B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463450A (zh) * 2014-06-23 2017-02-22 应用材料公司 在epi腔室中的基板热控制
CN107002222A (zh) * 2014-12-11 2017-08-01 应用材料公司 用于氮化铝(aln)pvd工艺的气冷的最小接触面积(mca)的静电吸盘(esc)

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US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
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US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP6104823B2 (ja) * 2011-03-01 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄型加熱基板支持体
JP5961917B2 (ja) * 2011-03-24 2016-08-03 住友電気工業株式会社 ウェハ保持体
JP6223983B2 (ja) * 2011-09-30 2017-11-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度制御付き静電チャック
CN102931133B (zh) * 2012-11-12 2016-02-10 中微半导体设备(上海)有限公司 一种改善硅穿孔工艺中刻蚀均匀性的方法
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
US9853579B2 (en) * 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck
JP6335341B2 (ja) * 2014-07-23 2018-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 可変型温度制御式基板支持アセンブリ
JP6392612B2 (ja) * 2014-09-30 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6463938B2 (ja) 2014-10-08 2019-02-06 日本特殊陶業株式会社 静電チャック
JP5987966B2 (ja) * 2014-12-10 2016-09-07 Toto株式会社 静電チャックおよびウェーハ処理装置
US9888528B2 (en) * 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
JP6124156B2 (ja) * 2015-04-21 2017-05-10 Toto株式会社 静電チャックおよびウェーハ処理装置
US9870934B2 (en) 2015-07-28 2018-01-16 Micron Technology, Inc. Electrostatic chuck and temperature-control method for the same
TWI808334B (zh) * 2015-08-06 2023-07-11 美商應用材料股份有限公司 工件握持器
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10246777B2 (en) * 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP6522180B1 (ja) * 2018-02-08 2019-05-29 Ｓｐｐテクノロジーズ株式会社 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法
WO2020054682A1 (ja) * 2018-09-13 2020-03-19 日本碍子株式会社 ウエハ載置装置
CN113711343A (zh) * 2019-02-05 2021-11-26 应用材料公司 用于吸附用于沉积工艺的掩模的基板支撑件
US11887878B2 (en) * 2019-06-28 2024-01-30 Applied Materials, Inc. Detachable biasable electrostatic chuck for high temperature applications
CN110331386A (zh) * 2019-07-09 2019-10-15 长江存储科技有限责任公司 在半导体晶圆上形成薄膜的方法
JP7390880B2 (ja) * 2019-12-05 2023-12-04 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN111161995A (zh) * 2020-03-07 2020-05-15 靖江先锋半导体科技有限公司 一种等离子刻蚀机用全封闭式云母加热基座
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
CN111607785A (zh) * 2020-05-26 2020-09-01 北京北方华创微电子装备有限公司 一种加热装置及半导体加工设备
TWI748774B (zh) * 2020-12-01 2021-12-01 天虹科技股份有限公司 晶圓承載盤及應用晶圓承載盤的薄膜沉積裝置
CN114959654B (zh) * 2021-02-26 2024-01-09 鑫天虹(厦门)科技有限公司 晶圆承载盘及应用晶圆承载盘的薄膜沉积装置
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Publication number Priority date Publication date Assignee Title
CN106463450A (zh) * 2014-06-23 2017-02-22 应用材料公司 在epi腔室中的基板热控制
CN107002222A (zh) * 2014-12-11 2017-08-01 应用材料公司 用于氮化铝(aln)pvd工艺的气冷的最小接触面积(mca)的静电吸盘(esc)
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
CN107002222B (zh) * 2014-12-11 2021-04-06 应用材料公司 用于氮化铝(aln)pvd工艺的气冷的最小接触面积(mca)的静电吸盘(esc)

Also Published As

Publication number Publication date
CN101093811A (zh) 2007-12-26
JP5183092B2 (ja) 2013-04-17
JP5069452B2 (ja) 2012-11-07
CN102593031B (zh) 2015-09-16
JP2007300057A (ja) 2007-11-15
CN102593031A (zh) 2012-07-18
TW200807606A (en) 2008-02-01
CN101093811B (zh) 2012-04-25
CN101887865B (zh) 2013-06-19
KR101387598B1 (ko) 2014-04-23
TWI463588B (zh) 2014-12-01
KR101380879B1 (ko) 2014-04-02
KR20070105828A (ko) 2007-10-31
TW200809999A (en) 2008-02-16
KR20070105929A (ko) 2007-10-31
TWI357629B (en) 2012-02-01
JP2007300119A (ja) 2007-11-15
CN101887865A (zh) 2010-11-17

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Open date: 20071226