CN100550386C - 互补金属氧化物半导体器件 - Google Patents
互补金属氧化物半导体器件 Download PDFInfo
- Publication number
- CN100550386C CN100550386C CNB021443823A CN02144382A CN100550386C CN 100550386 C CN100550386 C CN 100550386C CN B021443823 A CNB021443823 A CN B021443823A CN 02144382 A CN02144382 A CN 02144382A CN 100550386 C CN100550386 C CN 100550386C
- Authority
- CN
- China
- Prior art keywords
- mos transistor
- type
- semiconductor device
- gate electrode
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000295 complement effect Effects 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 161
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 97
- 229920005591 polysilicon Polymers 0.000 claims abstract description 97
- 239000012535 impurity Substances 0.000 claims abstract description 81
- 238000009792 diffusion process Methods 0.000 claims abstract description 79
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002019 doping agent Substances 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- 239000003870 refractory metal Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 229910021357 chromium silicide Inorganic materials 0.000 claims description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical group [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000004088 simulation Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 24
- 238000000926 separation method Methods 0.000 description 12
- 239000012528 membrane Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000007762 Ficus drupacea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003377 silicon compounds Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (35)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001271926 | 2001-09-07 | ||
JP271926/2001 | 2001-09-07 | ||
JP271926/01 | 2001-09-07 | ||
JP2002243211A JP2003158198A (ja) | 2001-09-07 | 2002-08-23 | 相補型mos半導体装置 |
JP243211/2002 | 2002-08-23 | ||
JP243211/02 | 2002-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1409400A CN1409400A (zh) | 2003-04-09 |
CN100550386C true CN100550386C (zh) | 2009-10-14 |
Family
ID=26621830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021443823A Expired - Fee Related CN100550386C (zh) | 2001-09-07 | 2002-09-06 | 互补金属氧化物半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6768174B2 (zh) |
JP (1) | JP2003158198A (zh) |
KR (1) | KR100883701B1 (zh) |
CN (1) | CN100550386C (zh) |
TW (1) | TW577147B (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4865152B2 (ja) * | 2001-06-19 | 2012-02-01 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
JP4898024B2 (ja) * | 2001-06-21 | 2012-03-14 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
KR100456700B1 (ko) * | 2002-10-09 | 2004-11-10 | 삼성전자주식회사 | 저항 패턴을 가지는 반도체 장치 및 그 제조방법 |
JP2005183686A (ja) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4065855B2 (ja) * | 2004-01-21 | 2008-03-26 | 株式会社日立製作所 | 生体および化学試料検査装置 |
KR100593444B1 (ko) * | 2004-02-12 | 2006-06-28 | 삼성전자주식회사 | 모오스 바렉터를 갖는 반도체소자 및 그것을 제조하는 방법 |
US20050280100A1 (en) * | 2004-06-17 | 2005-12-22 | Michael Artaki | Laterally diffused MOS device |
DE102004031708B4 (de) * | 2004-06-30 | 2008-02-07 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Herstellen eines Substrats mit kristallinen Halbleitergebieten unterschiedlicher Eigenschaften |
EP1782463A1 (en) * | 2004-06-30 | 2007-05-09 | Advanced Micro Devices, Inc. | Technique for forming a substrate having crystalline semiconductor regions of different characteristics |
US7397087B2 (en) * | 2004-08-06 | 2008-07-08 | International Business Machines Corporation | FEOL/MEOL metal resistor for high end CMOS |
DE102004057764B4 (de) * | 2004-11-30 | 2013-05-16 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Substrats mit kristallinen Halbleitergebieten mit unterschiedlichen Eigenschaften, die über einem kristallinen Vollsubstrat angeordnet sind und damit hergestelltes Halbleiterbauelement |
JP4987309B2 (ja) * | 2005-02-04 | 2012-07-25 | セイコーインスツル株式会社 | 半導体集積回路装置とその製造方法 |
JP5302493B2 (ja) | 2005-03-30 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP2007165492A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Instruments Inc | 半導体集積回路装置 |
JP5567247B2 (ja) * | 2006-02-07 | 2014-08-06 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
JP5360735B2 (ja) * | 2006-02-20 | 2013-12-04 | セイコーインスツル株式会社 | 半導体装置 |
JP2007305925A (ja) * | 2006-05-15 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US7855422B2 (en) * | 2006-05-31 | 2010-12-21 | Alpha & Omega Semiconductor, Ltd. | Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process |
KR100825723B1 (ko) * | 2006-07-28 | 2008-04-29 | 한국전자통신연구원 | 에지효과를 갖는 게이트절연막을 포함하는 광소자 |
KR100779091B1 (ko) * | 2006-07-28 | 2007-11-27 | 한국전자통신연구원 | 변조된 두께의 게이트절연막을 포함하는 광소자 |
JP5040387B2 (ja) * | 2007-03-20 | 2012-10-03 | 株式会社デンソー | 半導体装置 |
JP2009044002A (ja) * | 2007-08-09 | 2009-02-26 | Ricoh Co Ltd | 半導体装置及びそれを用いた温度検出装置 |
US7932146B2 (en) * | 2008-03-20 | 2011-04-26 | United Microelectronics Corp. | Metal gate transistor and polysilicon resistor and method for fabricating the same |
CN101552229B (zh) * | 2008-03-31 | 2012-04-11 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US20100019351A1 (en) * | 2008-07-28 | 2010-01-28 | Albert Ratnakumar | Varactors with enhanced tuning ranges |
JP5465907B2 (ja) * | 2009-03-27 | 2014-04-09 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP5616826B2 (ja) * | 2011-03-13 | 2014-10-29 | セイコーインスツル株式会社 | 抵抗回路を有する半導体装置 |
JP2013051250A (ja) * | 2011-08-30 | 2013-03-14 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8786021B2 (en) * | 2012-09-04 | 2014-07-22 | Macronix International Co., Ltd. | Semiconductor structure having an active device and method for manufacturing and manipulating the same |
JP2015015572A (ja) * | 2013-07-04 | 2015-01-22 | 日本電気株式会社 | 発振回路、発振装置および発振方法 |
US9319613B2 (en) | 2013-12-05 | 2016-04-19 | Omnivision Technologies, Inc. | Image sensor having NMOS source follower with P-type doping in polysilicon gate |
CN105680107B (zh) * | 2016-03-16 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi工艺的电池管理芯片电路 |
US11251095B2 (en) * | 2016-06-13 | 2022-02-15 | Globalfoundries Singapore Pte. Ltd. | High gain transistor for analog applications |
GB2610886B (en) * | 2019-08-21 | 2023-09-13 | Pragmatic Printing Ltd | Resistor geometry |
KR20220052395A (ko) * | 2020-10-20 | 2022-04-28 | 삼성전자주식회사 | 집적 회로 및 이를 포함하는 반도체 장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4423369A (en) * | 1977-01-06 | 1983-12-27 | Motorola, Inc. | Integrated voltage supply |
US5236857A (en) * | 1991-10-30 | 1993-08-17 | Texas Instruments Incorporated | Resistor structure and process |
US5489547A (en) * | 1994-05-23 | 1996-02-06 | Texas Instruments Incorporated | Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient |
US5939753A (en) * | 1997-04-02 | 1999-08-17 | Motorola, Inc. | Monolithic RF mixed signal IC with power amplification |
-
2002
- 2002-08-23 JP JP2002243211A patent/JP2003158198A/ja active Pending
- 2002-09-04 US US10/234,878 patent/US6768174B2/en not_active Expired - Lifetime
- 2002-09-04 TW TW091120198A patent/TW577147B/zh not_active IP Right Cessation
- 2002-09-06 CN CNB021443823A patent/CN100550386C/zh not_active Expired - Fee Related
- 2002-09-07 KR KR1020020054019A patent/KR100883701B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1409400A (zh) | 2003-04-09 |
JP2003158198A (ja) | 2003-05-30 |
TW577147B (en) | 2004-02-21 |
US20030047782A1 (en) | 2003-03-13 |
KR100883701B1 (ko) | 2009-02-12 |
KR20030022086A (ko) | 2003-03-15 |
US6768174B2 (en) | 2004-07-27 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160307 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091014 Termination date: 20200906 |