JP5616826B2 - 抵抗回路を有する半導体装置 - Google Patents
抵抗回路を有する半導体装置 Download PDFInfo
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- JP5616826B2 JP5616826B2 JP2011054902A JP2011054902A JP5616826B2 JP 5616826 B2 JP5616826 B2 JP 5616826B2 JP 2011054902 A JP2011054902 A JP 2011054902A JP 2011054902 A JP2011054902 A JP 2011054902A JP 5616826 B2 JP5616826 B2 JP 5616826B2
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000010408 film Substances 0.000 claims description 131
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 65
- 239000012535 impurity Substances 0.000 claims description 49
- 239000010409 thin film Substances 0.000 claims description 43
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 229910019974 CrSi Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 32
- 238000005530 etching Methods 0.000 description 15
- 238000000059 patterning Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図3では、オーバーエッチング耐性を向上させるため、金属配線と接続するコンタクトホールを厚い多結晶シリコン上に形成している。一方、抵抗素子本体は薄い多結晶シリコンで構成した上で、厚い多結晶シリコンとこの薄い多結晶シリコンを、金属配線と接続するコンタクトホールとは別に設けたビアホール13を介して接続している。
例えば多結晶シリコン抵抗を採用する場合、抵抗値の高精度化あるいは高抵抗化を目指すために多結晶シリコン膜の薄膜化を目指す場合がある。特に近年は装置の高度化とともに堆積膜厚の制御性が向上してきているため薄膜の実現が容易になってはきている。ただし、前述のような薄膜に対するオーバーエッチング耐性の問題が存在するために500Å以下の薄膜からなる抵抗素子を半導体集積回路に利用する事は難しかった。
第1の薄膜で構成される抵抗素子と、
前記抵抗素子上に形成した第2の薄膜と、
前記第2の薄膜上に形成した中間絶縁膜と、
前記第2の薄膜を貫通し、前記第1の薄膜に達する深さの前記中間絶縁膜に設けられた前記抵抗素子上のコンタクトホールと、
前記コンタクトホール上に形成した金属配線と、
を有する事を特徴とする抵抗回路を有する半導体装置とした。
または、前記第2の薄膜が、前記第1の薄膜上であって、前記コンタクトホールを含む離間した領域に形成していることを特徴とする抵抗回路を有する半導体装置とした。
または、前記第2の薄膜が、前記第1の薄膜上であって、前記第1の薄膜で構成される抵抗素子を含み抵抗素子より広い領域に形成することを特徴とする抵抗回路を有する半導体装置とした。
さらに、前記第1の薄膜が第1の多結晶シリコン膜であり、不純物濃度が1×1015から5×1019atoms/cm3の範囲の第1の導電型の不純物を含むことを特徴とする抵抗回路を有する半導体装置とした。
または、前記第2の薄膜が第1の多結晶シリコンとは逆の導電型の不純物を含む第2の多結晶シリコン膜であることを特徴とする抵抗回路を有する半導体装置とした。
または、前記第2の薄膜がシリコン窒化膜であることを特徴とする抵抗回路とした。
さらに、前記第2の薄膜が150Åから350Åの膜厚であることを特徴とする抵抗回路を有する半導体装置とした。
図1は、本発明の抵抗素子を内蔵した半導体集積回路の第1の実施例の模式断面図である。抵抗回路に用いられている本発明の抵抗素子101と、絶縁ゲート電界効果型トランジスタであるMISFET102とを組み合わせている。
2 分離用酸化膜
3 ゲート絶縁膜
4 ソース・ドレイン領域
5 ゲート電極
6 多結晶シリコン高濃度不純物領域
7 多結晶シリコン低濃度不純物領域
8 中間絶縁膜
9 コンタクトホール
10 金属配線
11 パッシベーション膜
12 シリコン窒化膜
13 ビアホール
14 多結晶シリコン薄膜
15 層間絶縁膜
101 抵抗素子
102 MISFET
Claims (8)
- 抵抗回路と絶縁ゲート電界効果型トランジスタとを有する半導体装置であって、
前記抵抗回路は、
半導体基板の表面に設けられた分離用酸化膜の上に配置された第1の薄膜で構成される抵抗素子と、
前記抵抗素子上に形成した第2の薄膜と、
前記第2の薄膜上に形成した中間絶縁膜と、
前記第2の薄膜を貫通し、前記第1の薄膜に達する深さの前記中間絶縁膜に設けられた前記抵抗素子上のコンタクトホールと、
前記コンタクトホール上に形成した金属配線と、
からなり、
前記第2の薄膜が、前記第1の薄膜上であって、前記コンタクトホールを含む離間した領域に形成され、
前記絶縁ゲート電界効果型トランジスタは、前記分離用酸化膜によって周囲を囲まれた前記半導体基板の領域に設けられている、
ことを特徴とする抵抗回路を有する半導体装置。 - 前記第1の薄膜の厚さが500Å以下であることを特徴とする請求項1記載の抵抗回路を有する半導体装置。
- 前記第1の薄膜が第1の多結晶シリコン膜であり、不純物濃度が1×1015から5×1019atoms/cm3の範囲の第1の導電型の不純物を含むことを特徴とする請求項1または請求項2記載の抵抗回路を有する半導体装置。
- 前記第1の薄膜がCrSiまたはCrSiNまたはCrSiOまたはNiCrまたはTiNの薄膜であることを特徴とする請求項1または請求項2記載の抵抗回路を有する半導体装置。
- 前記第2の薄膜が前記第1の多結晶シリコンとは逆の導電型の不純物を含む第2の多結晶シリコン膜であることを特徴とする請求項3記載の抵抗回路を有する半導体装置。
- 前記第2の薄膜が不純物を含まない第2の多結晶シリコン膜であることを特徴とする請求項3記載の抵抗回路を有する半導体装置。
- 前記第2の薄膜がシリコン窒化膜であることを特徴とする請求項1乃至4のいずれか1項に記載の抵抗回路を有する半導体装置。
- 前記第2の薄膜が150Åから350Åの膜厚であることを特徴とする請求項7記載の抵抗回路を有する半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011054902A JP5616826B2 (ja) | 2011-03-13 | 2011-03-13 | 抵抗回路を有する半導体装置 |
TW101107344A TWI555149B (zh) | 2011-03-13 | 2012-03-05 | A semiconductor device having a resistance circuit |
KR1020120024378A KR101883007B1 (ko) | 2011-03-13 | 2012-03-09 | 저항 회로를 가지는 반도체 장치 |
CN201210063849.4A CN102683344B (zh) | 2011-03-13 | 2012-03-12 | 具有电阻电路的半导体装置 |
US13/417,425 US20120228719A1 (en) | 2011-03-13 | 2012-03-12 | Semiconductor device with resistance circuit |
US14/073,167 US20140054719A1 (en) | 2011-03-13 | 2013-11-06 | Semiconductor device with resistance circuit |
US14/711,589 US9461038B2 (en) | 2011-03-13 | 2015-05-13 | Semiconductor device with resistance circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011054902A JP5616826B2 (ja) | 2011-03-13 | 2011-03-13 | 抵抗回路を有する半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012191091A JP2012191091A (ja) | 2012-10-04 |
JP5616826B2 true JP5616826B2 (ja) | 2014-10-29 |
Family
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JP2011054902A Expired - Fee Related JP5616826B2 (ja) | 2011-03-13 | 2011-03-13 | 抵抗回路を有する半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20120228719A1 (ja) |
JP (1) | JP5616826B2 (ja) |
KR (1) | KR101883007B1 (ja) |
CN (1) | CN102683344B (ja) |
TW (1) | TWI555149B (ja) |
Families Citing this family (9)
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JP6150997B2 (ja) * | 2012-10-03 | 2017-06-21 | エスアイアイ・セミコンダクタ株式会社 | 半導体集積回路装置 |
JP6267987B2 (ja) * | 2014-02-13 | 2018-01-24 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
US9825141B2 (en) * | 2015-05-26 | 2017-11-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Three dimensional monolithic LDMOS transistor |
US10644206B2 (en) * | 2016-08-12 | 2020-05-05 | Osram Oled Gmbh | Lighting device |
US10411085B2 (en) * | 2016-12-29 | 2019-09-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and a method for fabricating the same |
US10763324B2 (en) | 2017-07-25 | 2020-09-01 | Microchip Technology Incorporated | Systems and methods for forming a thin film resistor integrated in an integrated circuit device |
KR101973446B1 (ko) * | 2017-11-28 | 2019-04-29 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
JP7390841B2 (ja) * | 2019-09-30 | 2023-12-04 | エイブリック株式会社 | 半導体装置及びその製造方法 |
US20220037312A1 (en) * | 2020-07-29 | 2022-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit device, method, layout, and system |
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2011
- 2011-03-13 JP JP2011054902A patent/JP5616826B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-05 TW TW101107344A patent/TWI555149B/zh not_active IP Right Cessation
- 2012-03-09 KR KR1020120024378A patent/KR101883007B1/ko active IP Right Grant
- 2012-03-12 CN CN201210063849.4A patent/CN102683344B/zh not_active Expired - Fee Related
- 2012-03-12 US US13/417,425 patent/US20120228719A1/en not_active Abandoned
-
2013
- 2013-11-06 US US14/073,167 patent/US20140054719A1/en not_active Abandoned
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2015
- 2015-05-13 US US14/711,589 patent/US9461038B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20150243650A1 (en) | 2015-08-27 |
KR20120104495A (ko) | 2012-09-21 |
KR101883007B1 (ko) | 2018-07-27 |
US9461038B2 (en) | 2016-10-04 |
CN102683344B (zh) | 2016-03-30 |
TWI555149B (zh) | 2016-10-21 |
US20140054719A1 (en) | 2014-02-27 |
JP2012191091A (ja) | 2012-10-04 |
US20120228719A1 (en) | 2012-09-13 |
TW201244031A (en) | 2012-11-01 |
CN102683344A (zh) | 2012-09-19 |
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