CN100533683C - 硅氧化膜的去除方法 - Google Patents

硅氧化膜的去除方法 Download PDF

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Publication number
CN100533683C
CN100533683C CNB2007101616523A CN200710161652A CN100533683C CN 100533683 C CN100533683 C CN 100533683C CN B2007101616523 A CNB2007101616523 A CN B2007101616523A CN 200710161652 A CN200710161652 A CN 200710161652A CN 100533683 C CN100533683 C CN 100533683C
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China
Prior art keywords
oxide film
gas
processing
silicon
silicon oxide
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Expired - Fee Related
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CNB2007101616523A
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English (en)
Chinese (zh)
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CN101131929A (zh
Inventor
长谷部一秀
冈田充弘
千叶贵司
小川淳
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB2007101616523A 2003-04-22 2004-04-20 硅氧化膜的去除方法 Expired - Fee Related CN100533683C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003117664 2003-04-22
JP2003117664 2003-04-22

Related Parent Applications (1)

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CNB2004800110434A Division CN100377317C (zh) 2003-04-22 2004-04-20 硅氧化膜的去除方法及处理装置

Publications (2)

Publication Number Publication Date
CN101131929A CN101131929A (zh) 2008-02-27
CN100533683C true CN100533683C (zh) 2009-08-26

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CNB2007101616523A Expired - Fee Related CN100533683C (zh) 2003-04-22 2004-04-20 硅氧化膜的去除方法
CNB2004800110434A Expired - Fee Related CN100377317C (zh) 2003-04-22 2004-04-20 硅氧化膜的去除方法及处理装置

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CNB2004800110434A Expired - Fee Related CN100377317C (zh) 2003-04-22 2004-04-20 硅氧化膜的去除方法及处理装置

Country Status (5)

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US (1) US7611995B2 (https=)
KR (1) KR101046523B1 (https=)
CN (2) CN100533683C (https=)
TW (1) TW200501254A (https=)
WO (1) WO2004095559A1 (https=)

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US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
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JP5211464B2 (ja) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
JP4776575B2 (ja) 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
TW200908129A (en) * 2007-06-22 2009-02-16 Ulvac Inc Method for protecting semiconductor wafer and process for producing semiconductor device
KR101330707B1 (ko) * 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
KR100870914B1 (ko) * 2008-06-03 2008-11-28 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP5158068B2 (ja) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
CN102569020B (zh) * 2010-12-10 2015-01-14 有研新材料股份有限公司 一种8英寸晶圆切口氧化膜去除方法和装置
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
JP5661523B2 (ja) * 2011-03-18 2015-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5917861B2 (ja) 2011-08-30 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6110848B2 (ja) * 2012-05-23 2017-04-05 東京エレクトロン株式会社 ガス処理方法
KR102245729B1 (ko) 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US10622205B2 (en) * 2015-02-16 2020-04-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6726610B2 (ja) * 2016-12-13 2020-07-22 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP2018170387A (ja) * 2017-03-29 2018-11-01 東京エレクトロン株式会社 成膜方法及び縦型熱処理装置
JP7038564B2 (ja) * 2018-02-22 2022-03-18 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2022036756A (ja) * 2020-08-24 2022-03-08 キオクシア株式会社 半導体装置
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

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JP2853211B2 (ja) 1989-11-01 1999-02-03 富士通株式会社 半導体装置の製造方法
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US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JP2833946B2 (ja) 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
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JPH08195381A (ja) * 1995-01-17 1996-07-30 Fujitsu Ltd 半導体装置の製造方法
JPH1140770A (ja) * 1997-07-18 1999-02-12 Nec Corp 半導体装置の製造方法および半導体製造装置
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP3436256B2 (ja) 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
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Also Published As

Publication number Publication date
WO2004095559A1 (ja) 2004-11-04
KR101046523B1 (ko) 2011-07-04
KR20060002805A (ko) 2006-01-09
CN100377317C (zh) 2008-03-26
US20060216941A1 (en) 2006-09-28
CN101131929A (zh) 2008-02-27
US7611995B2 (en) 2009-11-03
CN1777980A (zh) 2006-05-24
TWI331364B (https=) 2010-10-01
TW200501254A (en) 2005-01-01

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Granted publication date: 20090826