JP7038564B2 - 膜形成方法及び基板処理装置 - Google Patents
膜形成方法及び基板処理装置 Download PDFInfo
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Description
本発明の実施形態に係る膜形成方法が実施可能な基板処理装置について、バッチ式の縦型熱処理装置を例に挙げて説明する。図1は、本発明の実施形態に係る縦型熱処理装置の一例を示す断面図である。
本発明の実施形態に係る膜形成方法について説明する。本発明の実施形態に係る膜形成方法は、例えば制御部100が縦型熱処理装置1の各部の動作を制御することによって実施される。図2は、本発明の実施形態に係る膜形成方法の一例を示すフローチャートである。図3は、本発明の実施形態に係る膜形成方法の一例を示す工程断面図である。
本発明の実施形態に係る膜形成方法の作用・効果を確認した実施例について説明する。
実施例1では、シリコン基板の表面に有機物であるジオクチルフタレート(DOP:Dioctyl phthalate)を付着させた後、有機物除去工程S1を行わなかった試料(サンプルA)及び有機物除去工程S1を行った試料(サンプルB)を作製した。なお、有機物除去工程S1では、300℃に安定化させた処理容器10内にインジェクタ30からH2ガス及びO2ガスを30分間導入した。
実施例2では、300℃、350℃、400℃、500℃、600℃、650℃、750℃に安定化させた処理容器10内で有機物除去工程S1を実施した後のシリコン基板の表面の酸化膜の膜厚を評価することで、シリコン基板への影響について評価した。なお、有機物除去工程S1では、処理容器10内にインジェクタ30からH2ガス及びO2ガスを30分間導入した。
実施例3では、有機物が付着した酸化膜が表面に形成されたシリコン基板に対して、有機物除去工程S1、酸化膜除去工程S2、及び成膜工程S3をこの順番で実施することでシリコン基板の上にシリコン膜を形成した(サンプルC)。また、比較のために、有機物除去工程S1を実施することなく、酸化膜除去工程S2及び成膜工程S3をこの順番で実施することでシリコン基板の上にシリコン膜を形成した(サンプルD)。有機物除去工程S1、酸化膜除去工程S2、及び成膜工程S3のプロセス条件は以下の通りである。
(有機物除去工程S1)
処理容器10内の温度:300℃
処理容器10内の圧力:0.35Torr(46.7Pa)
ガス流量:H2/O2=1000sccm/1700sccm
ガス供給時間:180分
(酸化膜除去工程S2)
処理容器10内の温度:50℃
処理容器10内の圧力:0.2Torr(26.7Pa)
ガス流量:HF/NH3=40sccm/1000sccm
ガス供給時間:35分
(成膜工程S3)
処理容器10内の温度:380℃
処理容器10内の圧力:1.0Torr(133.3Pa)
ガス流量:Si2H6=350sccm
次いで、原子間力顕微鏡(AFM:Atomic Force Microscope)により、サンプルC及びサンプルDの表面粗さについて評価した。
102 シリコン酸化膜
103 有機物
104 シリコン膜
Claims (6)
- 有機物が付着した酸化膜を表面に有する下地に水素含有ガス及び酸素含有ガスを供給して前記有機物を除去する有機物除去工程と、
前記有機物除去工程の後、前記酸化膜を除去する酸化膜除去工程と、
前記酸化膜除去工程の後、前記下地の表面に所定の膜を成膜する成膜工程と、
を有し、
前記有機物除去工程では、200℃~300℃の温度において、前記水素含有ガスとして、水素ガス、アンモニアガス、メタンガス、エチレンガスの少なくともいずれか1つを供給し、かつ前記酸素含有ガスとして、酸素ガス、亜酸化窒素ガス、一酸化窒素ガス、水蒸気、過酸化水素、一酸化炭素ガス、二酸化炭素ガスの少なくともいずれか1つを供給する、
膜形成方法。 - 前記有機物除去工程、前記酸化膜除去工程、及び前記成膜工程は、同一の装置内で連続して行われる、
請求項1に記載の膜形成方法。 - 前記酸化膜除去工程は、25℃~200℃の温度で行われる、
請求項1又は2に記載の膜形成方法。 - 前記酸化膜除去工程は、
前記酸化膜と、ハロゲン含有ガス及び塩基性ガスとを化学反応させて、前記酸化膜を反応生成物に変質させるステップと、
前記反応生成物を加熱して除去するステップと、
を有する、
請求項1乃至3のいずれか一項に記載の膜形成方法。 - 前記下地には、凹凸パターンが形成されている、
請求項1乃至4のいずれか一項に記載の膜形成方法。 - 基板を収容する処理容器と、
前記処理容器内に水素含有ガス及び酸素含有ガスを供給可能なガス供給部と、
前記ガス供給部を制御する制御部と、
を有し、
前記制御部は、
前記処理容器内に水素含有ガス及び前記酸素含有ガスを供給して前記基板の表面に形成された酸化膜に付着した有機物を除去する有機物除去工程と、
前記有機物除去工程の後、前記酸化膜を除去する酸化膜除去工程と、
前記酸化膜除去工程の後、前記基板の表面に所定の膜を成膜する成膜工程と、
を実施するように前記ガス供給部を制御し、
前記制御部は、
前記有機物除去工程において、200℃~300℃の温度において、前記水素含有ガスとして、水素ガス、アンモニアガス、メタンガス、エチレンガスの少なくともいずれか1つを供給し、かつ前記酸素含有ガスとして、酸素ガス、亜酸化窒素ガス、一酸化窒素ガス、水蒸気、過酸化水素、一酸化炭素ガス、二酸化炭素ガスの少なくともいずれか1つを供給するように前記ガス供給部を制御する、
基板処理装置。
Priority Applications (4)
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JP2018030122A JP7038564B2 (ja) | 2018-02-22 | 2018-02-22 | 膜形成方法及び基板処理装置 |
KR1020190019246A KR102512325B1 (ko) | 2018-02-22 | 2019-02-19 | 막 형성 방법 및 기판 처리 장치 |
CN201910126154.8A CN110189982A (zh) | 2018-02-22 | 2019-02-20 | 膜形成方法和基板处理装置 |
US16/281,418 US11251034B2 (en) | 2018-02-22 | 2019-02-21 | Film forming method and substrate processing apparatus |
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JP2018030122A JP7038564B2 (ja) | 2018-02-22 | 2018-02-22 | 膜形成方法及び基板処理装置 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006261633A (ja) | 2005-02-18 | 2006-09-28 | Tokyo Electron Ltd | 基板の処理方法、固体撮像素子の製造方法、薄膜デバイスの製造方法及びプログラム |
JP2016122699A (ja) | 2014-12-24 | 2016-07-07 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および成膜装置 |
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JP3210510B2 (ja) * | 1993-12-17 | 2001-09-17 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0927457A (ja) * | 1995-07-12 | 1997-01-28 | Sony Corp | 薄膜堆積方法 |
JP4626912B2 (ja) * | 2000-12-05 | 2011-02-09 | 東京エレクトロン株式会社 | 被処理体の処理方法、処理装置、薄膜形成方法及び薄膜形成装置 |
US7208428B2 (en) * | 2000-12-05 | 2007-04-24 | Tokyo Electron Limited | Method and apparatus for treating article to be treated |
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