CN100517602C - 基板的处理方法、电子器件的制造方法和程序 - Google Patents

基板的处理方法、电子器件的制造方法和程序 Download PDF

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Publication number
CN100517602C
CN100517602C CNB2006100074778A CN200610007477A CN100517602C CN 100517602 C CN100517602 C CN 100517602C CN B2006100074778 A CNB2006100074778 A CN B2006100074778A CN 200610007477 A CN200610007477 A CN 200610007477A CN 100517602 C CN100517602 C CN 100517602C
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China
Prior art keywords
layer
insulating film
dielectric constant
low dielectric
exposed
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Expired - Lifetime
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CNB2006100074778A
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English (en)
Chinese (zh)
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CN1822326A (zh
Inventor
西村荣一
岩﨑贤也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04C—STRUCTURAL ELEMENTS; BUILDING MATERIALS
    • E04C2/00—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels
    • E04C2/30—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by the shape or structure
    • E04C2/32—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by the shape or structure formed of corrugated or otherwise indented sheet-like material; composed of such layers with or without layers of flat sheet-like material
    • E04C2/322—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by the shape or structure formed of corrugated or otherwise indented sheet-like material; composed of such layers with or without layers of flat sheet-like material with parallel corrugations
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
    • E04B1/38—Connections for building structures in general
    • E04B1/61—Connections for building structures in general of slab-shaped building elements with each other
    • E04B1/6108—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together
    • E04B1/612—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces
    • E04B1/6125—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces with protrusions on the one frontal surface co-operating with recesses in the other frontal surface
    • E04B1/6137—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces with protrusions on the one frontal surface co-operating with recesses in the other frontal surface the connection made by formlocking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2006100074778A 2005-02-14 2006-02-14 基板的处理方法、电子器件的制造方法和程序 Expired - Lifetime CN100517602C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005036716 2005-02-14
JP2005036716 2005-02-14
JP2005278843 2005-09-26
JP2005278843A JP4860219B2 (ja) 2005-02-14 2005-09-26 基板の処理方法、電子デバイスの製造方法及びプログラム

Publications (2)

Publication Number Publication Date
CN1822326A CN1822326A (zh) 2006-08-23
CN100517602C true CN100517602C (zh) 2009-07-22

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CNB2006100074778A Expired - Lifetime CN100517602C (zh) 2005-02-14 2006-02-14 基板的处理方法、电子器件的制造方法和程序

Country Status (6)

Country Link
US (1) US7682517B2 (https=)
EP (1) EP1691408A3 (https=)
JP (1) JP4860219B2 (https=)
KR (1) KR100830736B1 (https=)
CN (1) CN100517602C (https=)
TW (1) TWI456691B (https=)

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Also Published As

Publication number Publication date
US7682517B2 (en) 2010-03-23
EP1691408A3 (en) 2010-01-06
TWI456691B (zh) 2014-10-11
EP1691408A2 (en) 2006-08-16
KR100830736B1 (ko) 2008-05-20
US20060194435A1 (en) 2006-08-31
JP4860219B2 (ja) 2012-01-25
TW200636914A (en) 2006-10-16
JP2006253634A (ja) 2006-09-21
CN1822326A (zh) 2006-08-23
KR20060018918A (ko) 2006-03-02

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