JP6738485B2 - 低圧リフトピンキャビティハードウェア - Google Patents
低圧リフトピンキャビティハードウェア Download PDFInfo
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- JP6738485B2 JP6738485B2 JP2019511385A JP2019511385A JP6738485B2 JP 6738485 B2 JP6738485 B2 JP 6738485B2 JP 2019511385 A JP2019511385 A JP 2019511385A JP 2019511385 A JP2019511385 A JP 2019511385A JP 6738485 B2 JP6738485 B2 JP 6738485B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
Description
Claims (15)
- プラズマ処理装置のためのポンピングシステムであって、
処理チャンバの基板支持アセンブリの空洞部を前記処理チャンバの排気口に連結する第1のポンプ経路と、
前記基板支持アセンブリの前記空洞部を前記処理チャンバの排気領域に連結する第2のポンプ経路と、
前記第1のポンプ経路内に配置され、第1の状態と第2の状態との間で設定可能である第1のバルブと、
前記第2のポンプ経路内に配置され、前記第1の状態と前記第2の状態との間で設定可能である第2のバルブと、
を備えるポンピングシステム。 - 前記基板支持アセンブリの前記空洞部を前記第1のバルブおよび前記第2のバルブに連結する第1のポンプラインを、さらに備える、請求項1に記載のポンピングシステム。
- 前記第1のバルブを前記プラズマ処理装置内の前記排気口に連結して第1のポンプ経路を形成する第2のポンプラインを、さらに備える、請求項2に記載のポンピングシステム。
- 前記第2のバルブを前記処理チャンバの前記排気領域に連結して第2のポンプ経路を形成する第2のポンプラインを、さらに備える、請求項2に記載のポンピングシステム。
- 前記第1のバルブが前記第1の状態にあり、前記第2のバルブが前記第2の状態にある、請求項1に記載のポンピングシステム。
- 前記第1の状態が、前記基板支持アセンブリの前記空洞部を前記排気口に流体的に連結する開状態であり、前記第2の状態が、前記基板支持アセンブリと前記排気領域との間を流体的に連通させない閉状態である、請求項5に記載のポンピングシステム。
- プラズマ処理装置であって、
処理領域を囲むリッドアセンブリおよびチャンバ本体と、
前記チャンバ本体内に配置された基板支持アセンブリであって、その中に形成された空洞部を有する基板支持アセンブリと、
前記チャンバ本体内に排気領域を画定する排気アセンブリであって、前記チャンバ本体が、前記基板支持アセンブリの中心軸の周りに対称的に配置され前記処理領域を前記排気領域と流体的に接続する複数の通路を含む、排気アセンブリと、
前記チャンバ本体を貫通して形成された排気口と、
プラズマ処理装置のためのポンピングシステムであって、
前記基板支持アセンブリの前記空洞部を処理チャンバの前記排気口に連結する第1のポンプ経路と、
前記基板支持アセンブリの前記空洞部を前記処理チャンバの前記排気領域に連結する第2のポンプ経路と、
前記第1のポンプ経路内に配置され、第1の状態と第2の状態との間で設定可能である第1のバルブと、
前記第2のポンプ経路内に配置され、前記第1の状態と前記第2の状態との間で設定可能である第2のバルブと、
を備えるポンピングシステムと、
を備えるプラズマ処理装置。 - 前記基板支持アセンブリが、
支持ペデスタルと、
前記空洞部が形成されている下部電極と、
を備える、請求項7に記載のプラズマ処理装置。 - 前記基板支持アセンブリの前記空洞部を前記第1のバルブおよび前記第2のバルブに連結する第1のポンプラインを、さらに備える、請求項7に記載のプラズマ処理装置。
- 前記第1のバルブを前記プラズマ処理装置内の前記排気口に連結して第1のポンプ経路を形成する第2のポンプラインを、さらに備える、請求項9に記載のプラズマ処理装置。
- 前記第2のバルブを前記処理チャンバの前記排気領域に連結して第2のポンプ経路を形成する第2のポンプラインを、さらに備える、請求項9に記載のプラズマ処理装置。
- 前記第1のバルブおよび前記第2のバルブに連結されたコントローラであって、前記第1のバルブを前記第1の状態と前記第2の状態との間で切り替え、前記第2のバルブを前記第1の状態と前記第2の状態との間で切り替えるように構成されたコントローラを、さらに備える、請求項7に記載のプラズマ処理装置。
- 前記第1のバルブが前記第1の状態にあり、前記第2のバルブが前記第2の状態にある、請求項9に記載のプラズマ処理装置。
- 前記第1の状態が、前記基板支持アセンブリの前記空洞部を前記排気口に流体的に連結する開状態であり、前記第2の状態が、前記基板支持アセンブリと前記排気領域との間を流体的に連通させない閉状態である、請求項13に記載のプラズマ処理装置。
- 基板を処理する方法であって、
プラズマ処理装置の基板支持アセンブリの空洞部と前記プラズマ処理装置の排気口との間に画定された第1のポンプ経路を開くことと、
前記基板に処理ステップを実行することと、
前記第1のポンプ経路を閉じ、前記基板支持アセンブリの前記空洞部と前記プラズマ処理装置の排気領域との間に画定された第2のポンプ経路を開くことと、
前記プラズマ処理装置内で洗浄プロセスを実行することと、
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662380084P | 2016-08-26 | 2016-08-26 | |
US62/380,084 | 2016-08-26 | ||
PCT/US2017/048642 WO2018039578A1 (en) | 2016-08-26 | 2017-08-25 | Low pressure lift pin cavity hardware |
Publications (2)
Publication Number | Publication Date |
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JP2019532496A JP2019532496A (ja) | 2019-11-07 |
JP6738485B2 true JP6738485B2 (ja) | 2020-08-12 |
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JP2019511385A Active JP6738485B2 (ja) | 2016-08-26 | 2017-08-25 | 低圧リフトピンキャビティハードウェア |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180061616A1 (ja) |
JP (1) | JP6738485B2 (ja) |
KR (1) | KR102204229B1 (ja) |
CN (1) | CN109563617B (ja) |
TW (2) | TWI735907B (ja) |
WO (1) | WO2018039578A1 (ja) |
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JP6921796B2 (ja) | 2018-09-28 | 2021-08-18 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
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CN114574837B (zh) * | 2022-03-07 | 2023-03-21 | 苏州迈为科技股份有限公司 | 等离子体工艺设备中用于解决寄生等离子体的结构及方法 |
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US20180061616A1 (en) | 2018-03-01 |
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