CN100487896C - 半导体器件的制作方法及其制作的半导体器件 - Google Patents

半导体器件的制作方法及其制作的半导体器件 Download PDF

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Publication number
CN100487896C
CN100487896C CNB2005800075543A CN200580007554A CN100487896C CN 100487896 C CN100487896 C CN 100487896C CN B2005800075543 A CNB2005800075543 A CN B2005800075543A CN 200580007554 A CN200580007554 A CN 200580007554A CN 100487896 C CN100487896 C CN 100487896C
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China
Prior art keywords
capacitor
electrode
dielectric material
layer
dielectric
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Expired - Fee Related
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CNB2005800075543A
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English (en)
Chinese (zh)
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CN1930685A (zh
Inventor
托马斯·P·瑞美尔
斯瑞拉姆·卡尔帕特
梅尔维·F·米勒尔
彼德·朱彻尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1930685A publication Critical patent/CN1930685A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers

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  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2005800075543A 2004-03-10 2005-02-10 半导体器件的制作方法及其制作的半导体器件 Expired - Fee Related CN100487896C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/799,554 US6919244B1 (en) 2004-03-10 2004-03-10 Method of making a semiconductor device, and semiconductor device made thereby
US10/799,554 2004-03-10

Publications (2)

Publication Number Publication Date
CN1930685A CN1930685A (zh) 2007-03-14
CN100487896C true CN100487896C (zh) 2009-05-13

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CNB2005800075543A Expired - Fee Related CN100487896C (zh) 2004-03-10 2005-02-10 半导体器件的制作方法及其制作的半导体器件

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Country Link
US (2) US6919244B1 (https=)
EP (2) EP2528086A3 (https=)
JP (1) JP4891224B2 (https=)
KR (1) KR101102785B1 (https=)
CN (1) CN100487896C (https=)
WO (1) WO2005091795A2 (https=)

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KR100678638B1 (ko) * 2005-11-08 2007-02-05 삼성전자주식회사 반도체 소자의 제조 방법
JP2007311539A (ja) * 2006-05-18 2007-11-29 Nec Electronics Corp 半導体装置
KR100764741B1 (ko) * 2006-06-08 2007-10-08 삼성전자주식회사 반도체 장치 및 그 형성 방법
US7956400B2 (en) * 2006-06-15 2011-06-07 Freescale Semiconductor, Inc. MIM capacitor integration
US7755164B1 (en) * 2006-06-21 2010-07-13 Amkor Technology, Inc. Capacitor and resistor having anodic metal and anodic metal oxide structure
JP2008112956A (ja) * 2006-08-03 2008-05-15 Sony Corp キャパシタおよびその製造方法、ならびに、半導体デバイスおよび液晶表示装置
US8124490B2 (en) 2006-12-21 2012-02-28 Stats Chippac, Ltd. Semiconductor device and method of forming passive devices
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP2008211115A (ja) * 2007-02-28 2008-09-11 Ricoh Co Ltd 半導体装置
US7935570B2 (en) * 2008-12-10 2011-05-03 Stats Chippac, Ltd. Semiconductor device and method of embedding integrated passive devices into the package electrically interconnected using conductive pillars
US7951663B2 (en) * 2009-05-26 2011-05-31 Stats Chippac, Ltd. Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
US8445353B1 (en) * 2009-09-29 2013-05-21 National Semiconductor Corporation Method for integrating MIM capacitor and thin film resistor in modular two layer metal process and corresponding device
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8980708B2 (en) * 2013-02-19 2015-03-17 Qualcomm Incorporated Complementary back end of line (BEOL) capacitor
US9041148B2 (en) * 2013-06-13 2015-05-26 Qualcomm Incorporated Metal-insulator-metal capacitor structures
JP6149578B2 (ja) * 2013-07-30 2017-06-21 富士通セミコンダクター株式会社 電子デバイスの製造方法
US10515949B2 (en) * 2013-10-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and manufacturing method thereof
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
CN105226044B (zh) * 2014-05-29 2018-12-18 联华电子股份有限公司 集成电路及形成集成电路的方法
CN105304615B (zh) * 2014-06-05 2018-03-23 联华电子股份有限公司 半导体结构
US10115719B2 (en) * 2014-10-30 2018-10-30 GlobalFoundries, Inc. Integrated circuits with resistor structures formed from MIM capacitor material and methods for fabricating same
TWI622176B (zh) * 2015-12-04 2018-04-21 Powerchip Technology Corporation Ｍｉｍ電容之結構及其製造方法
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
DE102018107387B4 (de) 2017-09-28 2022-08-25 Taiwan Semiconductor Manufacturing Co. Ltd. Metall-isolator-metall-kondensatorstruktur mit hoher kapazität und verfahren zu deren herstellung
US10879172B2 (en) * 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure
US12424537B2 (en) * 2021-07-30 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and methods of forming the same
US12040268B2 (en) * 2022-06-01 2024-07-16 Qualcomm Incorporated Thin film resistor (TFR) device structure for high performance radio frequency (RF) filter design
US20250089277A1 (en) * 2023-09-12 2025-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal (mim) capacitors with improved reliability
US12289919B1 (en) * 2024-04-17 2025-04-29 Globalfoundries Singapore Pte. Ltd. Buffered top thin film resistor, MIM capacitor, and method of forming the same

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CN1478294A (zh) * 2000-08-21 2004-02-25 Ħ��������˾ 具有无源元件的半导体器件及其制备方法

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Also Published As

Publication number Publication date
JP2007528604A (ja) 2007-10-11
WO2005091795A3 (en) 2005-12-15
CN1930685A (zh) 2007-03-14
EP1723673A2 (en) 2006-11-22
WO2005091795A2 (en) 2005-10-06
KR20070012361A (ko) 2007-01-25
EP1723673B1 (en) 2013-09-04
EP1723673A4 (en) 2010-06-16
JP4891224B2 (ja) 2012-03-07
US7306986B2 (en) 2007-12-11
US6919244B1 (en) 2005-07-19
KR101102785B1 (ko) 2012-01-05
US20050272216A1 (en) 2005-12-08
EP2528086A2 (en) 2012-11-28
EP2528086A3 (en) 2013-04-24

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