CN100487880C - 用于形成双金属栅极结构的处理过程 - Google Patents

用于形成双金属栅极结构的处理过程 Download PDF

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Publication number
CN100487880C
CN100487880C CNB2004800094963A CN200480009496A CN100487880C CN 100487880 C CN100487880 C CN 100487880C CN B2004800094963 A CNB2004800094963 A CN B2004800094963A CN 200480009496 A CN200480009496 A CN 200480009496A CN 100487880 C CN100487880 C CN 100487880C
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CN
China
Prior art keywords
metal
region
forming
layer
gate
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Expired - Fee Related
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CNB2004800094963A
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English (en)
Chinese (zh)
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CN1771590A (zh
Inventor
奥卢邦米·O·阿德图图
埃里克·D·卢科斯基
斯里坎斯·B·萨马韦当
小阿图罗·M·马丁内斯
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1771590A publication Critical patent/CN1771590A/zh
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Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNB2004800094963A 2003-04-09 2004-04-08 用于形成双金属栅极结构的处理过程 Expired - Fee Related CN100487880C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/410,043 US6790719B1 (en) 2003-04-09 2003-04-09 Process for forming dual metal gate structures
US10/410,043 2003-04-09

Publications (2)

Publication Number Publication Date
CN1771590A CN1771590A (zh) 2006-05-10
CN100487880C true CN100487880C (zh) 2009-05-13

Family

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Family Applications (1)

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CNB2004800094963A Expired - Fee Related CN100487880C (zh) 2003-04-09 2004-04-08 用于形成双金属栅极结构的处理过程

Country Status (6)

Country Link
US (1) US6790719B1 (enExample)
JP (1) JP4653735B2 (enExample)
KR (1) KR101159339B1 (enExample)
CN (1) CN100487880C (enExample)
TW (1) TWI342044B (enExample)
WO (1) WO2004093182A1 (enExample)

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JP3790237B2 (ja) * 2003-08-26 2006-06-28 株式会社東芝 半導体装置の製造方法
US7125775B1 (en) * 2004-03-18 2006-10-24 Integrated Device Technology, Inc. Method for forming hybrid device gates
US7030001B2 (en) * 2004-04-19 2006-04-18 Freescale Semiconductor, Inc. Method for forming a gate electrode having a metal
DE102004026232B4 (de) * 2004-05-28 2006-05-04 Infineon Technologies Ag Verfahren zum Ausbilden einer integrierten Halbleiterschaltungsanordnung
KR100602122B1 (ko) * 2004-12-03 2006-07-19 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
US7109079B2 (en) * 2005-01-26 2006-09-19 Freescale Semiconductor, Inc. Metal gate transistor CMOS process and method for making
JP4764030B2 (ja) 2005-03-03 2011-08-31 株式会社東芝 半導体装置及びその製造方法
JP4626411B2 (ja) * 2005-06-13 2011-02-09 ソニー株式会社 半導体装置および半導体装置の製造方法
US20070048920A1 (en) * 2005-08-25 2007-03-01 Sematech Methods for dual metal gate CMOS integration
US7332433B2 (en) * 2005-09-22 2008-02-19 Sematech Inc. Methods of modulating the work functions of film layers
JP4723975B2 (ja) * 2005-10-25 2011-07-13 株式会社東芝 半導体装置およびその製造方法
JP2007123548A (ja) * 2005-10-28 2007-05-17 Renesas Technology Corp 半導体装置の製造方法
US20070178634A1 (en) * 2006-01-31 2007-08-02 Hyung Suk Jung Cmos semiconductor devices having dual work function metal gate stacks
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
JP4929867B2 (ja) * 2006-06-19 2012-05-09 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100835430B1 (ko) * 2007-05-21 2008-06-04 주식회사 동부하이텍 반도체 소자의 듀얼 게이트 전극 형성 방법
US7696036B2 (en) * 2007-06-14 2010-04-13 International Business Machines Corporation CMOS transistors with differential oxygen content high-k dielectrics
US7666730B2 (en) * 2007-06-29 2010-02-23 Freescale Semiconductor, Inc. Method for forming a dual metal gate structure
KR100903383B1 (ko) * 2007-07-31 2009-06-23 주식회사 하이닉스반도체 일함수가 조절된 게이트전극을 구비한 트랜지스터 및 그를구비하는 메모리소자
JP2009044051A (ja) * 2007-08-10 2009-02-26 Panasonic Corp 半導体装置及びその製造方法
US20090206416A1 (en) * 2008-02-19 2009-08-20 International Business Machines Corporation Dual metal gate structures and methods
US7691701B1 (en) * 2009-01-05 2010-04-06 International Business Machines Corporation Method of forming gate stack and structure thereof
DE102009039418B4 (de) * 2009-08-31 2013-08-22 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Einstellung der Austrittsarbeit in Gate-Stapeln mit großem ε, die Gatedielektrika mit unterschiedlicher Dicke enthalten
US8435878B2 (en) 2010-04-06 2013-05-07 International Business Machines Corporation Field effect transistor device and fabrication
US8211775B1 (en) 2011-03-09 2012-07-03 United Microelectronics Corp. Method of making transistor having metal gate
US8519487B2 (en) 2011-03-21 2013-08-27 United Microelectronics Corp. Semiconductor device
US9384962B2 (en) 2011-04-07 2016-07-05 United Microelectronics Corp. Oxygen treatment of replacement work-function metals in CMOS transistor gates
US8530980B2 (en) 2011-04-27 2013-09-10 United Microelectronics Corp. Gate stack structure with etch stop layer and manufacturing process thereof
US9490342B2 (en) 2011-06-16 2016-11-08 United Microelectronics Corp. Method for fabricating semiconductor device
US8673758B2 (en) 2011-06-16 2014-03-18 United Microelectronics Corp. Structure of metal gate and fabrication method thereof
US8536038B2 (en) 2011-06-21 2013-09-17 United Microelectronics Corp. Manufacturing method for metal gate using ion implantation
US8486790B2 (en) 2011-07-18 2013-07-16 United Microelectronics Corp. Manufacturing method for metal gate
US8551876B2 (en) 2011-08-18 2013-10-08 United Microelectronics Corp. Manufacturing method for semiconductor device having metal gate
US8872286B2 (en) 2011-08-22 2014-10-28 United Microelectronics Corp. Metal gate structure and fabrication method thereof
US8691681B2 (en) 2012-01-04 2014-04-08 United Microelectronics Corp. Semiconductor device having a metal gate and fabricating method thereof
US8860181B2 (en) 2012-03-07 2014-10-14 United Microelectronics Corp. Thin film resistor structure
US9105623B2 (en) 2012-05-25 2015-08-11 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US8975666B2 (en) 2012-08-22 2015-03-10 United Microelectronics Corp. MOS transistor and process thereof
US9054172B2 (en) 2012-12-05 2015-06-09 United Microelectrnics Corp. Semiconductor structure having contact plug and method of making the same
US8735269B1 (en) 2013-01-15 2014-05-27 United Microelectronics Corp. Method for forming semiconductor structure having TiN layer
US9653300B2 (en) 2013-04-16 2017-05-16 United Microelectronics Corp. Structure of metal gate structure and manufacturing method of the same
US9159798B2 (en) 2013-05-03 2015-10-13 United Microelectronics Corp. Replacement gate process and device manufactured using the same
US9196542B2 (en) 2013-05-22 2015-11-24 United Microelectronics Corp. Method for manufacturing semiconductor devices
US8921947B1 (en) 2013-06-10 2014-12-30 United Microelectronics Corp. Multi-metal gate semiconductor device having triple diameter metal opening
US20150069534A1 (en) 2013-09-11 2015-03-12 United Microelectronics Corp. Semiconductor device and method for fabricating the same
US9105720B2 (en) 2013-09-11 2015-08-11 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US9196546B2 (en) 2013-09-13 2015-11-24 United Microelectronics Corp. Metal gate transistor
US9231071B2 (en) 2014-02-24 2016-01-05 United Microelectronics Corp. Semiconductor structure and manufacturing method of the same

Citations (6)

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CN1227407A (zh) * 1998-02-27 1999-09-01 联诚积体电路股份有限公司 制作双电压金属氧化物半导体晶体管的方法
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
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US6214681B1 (en) * 2000-01-26 2001-04-10 Advanced Micro Devices, Inc. Process for forming polysilicon/germanium thin films without germanium outgassing
US20020151125A1 (en) * 2001-04-11 2002-10-17 Samsung Electronics Co., Ltd. Method of forming a CMOS type semiconductor device having dual gates
US6492217B1 (en) * 1998-06-30 2002-12-10 Intel Corporation Complementary metal gates and a process for implementation

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JP2002083812A (ja) * 1999-06-29 2002-03-22 Semiconductor Energy Lab Co Ltd 配線材料およびこれを用いた配線を備えた半導体装置およびその作製方法
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Also Published As

Publication number Publication date
TW200507099A (en) 2005-02-16
KR20050120785A (ko) 2005-12-23
TWI342044B (en) 2011-05-11
US6790719B1 (en) 2004-09-14
JP2006523037A (ja) 2006-10-05
CN1771590A (zh) 2006-05-10
JP4653735B2 (ja) 2011-03-16
WO2004093182A1 (en) 2004-10-28
KR101159339B1 (ko) 2012-06-25

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