CN100474119C - 抗蚀剂图形形成方法和半导体器件的制造方法 - Google Patents

抗蚀剂图形形成方法和半导体器件的制造方法 Download PDF

Info

Publication number
CN100474119C
CN100474119C CNB2006100582084A CN200610058208A CN100474119C CN 100474119 C CN100474119 C CN 100474119C CN B2006100582084 A CNB2006100582084 A CN B2006100582084A CN 200610058208 A CN200610058208 A CN 200610058208A CN 100474119 C CN100474119 C CN 100474119C
Authority
CN
China
Prior art keywords
mentioned
exposure
film
resist
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100582084A
Other languages
English (en)
Chinese (zh)
Other versions
CN1825209A (zh
Inventor
河村大辅
柴田刚
伊藤信一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1825209A publication Critical patent/CN1825209A/zh
Application granted granted Critical
Publication of CN100474119C publication Critical patent/CN100474119C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2006100582084A 2005-02-24 2006-02-24 抗蚀剂图形形成方法和半导体器件的制造方法 Expired - Fee Related CN100474119C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP049394/2005 2005-02-24
JP2005049394A JP4634822B2 (ja) 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1825209A CN1825209A (zh) 2006-08-30
CN100474119C true CN100474119C (zh) 2009-04-01

Family

ID=36932307

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100582084A Expired - Fee Related CN100474119C (zh) 2005-02-24 2006-02-24 抗蚀剂图形形成方法和半导体器件的制造方法

Country Status (4)

Country Link
US (1) US20060194155A1 (enExample)
JP (1) JP4634822B2 (enExample)
CN (1) CN100474119C (enExample)
TW (1) TW200727335A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP4357514B2 (ja) * 2006-09-29 2009-11-04 株式会社東芝 液浸露光方法
JP4923936B2 (ja) * 2006-10-13 2012-04-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法
JP4813333B2 (ja) * 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
JP4331199B2 (ja) * 2006-11-29 2009-09-16 東京エレクトロン株式会社 液浸露光用塗布膜形成装置および塗布膜形成方法
JP2008153450A (ja) 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布膜処理方法および塗布膜処理装置
JP4922858B2 (ja) * 2007-07-30 2012-04-25 株式会社東芝 パターン形成方法及び洗浄装置
JP2009130031A (ja) * 2007-11-21 2009-06-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP5133730B2 (ja) * 2008-02-19 2013-01-30 セイコーインスツル株式会社 圧電振動片の製造方法
JP2009295716A (ja) 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法及び基板処理装置
JP2011082369A (ja) * 2009-10-08 2011-04-21 Toshiba Corp 半導体装置の製造方法及び製造システム
CN102455593B (zh) * 2010-10-25 2013-10-09 京东方科技集团股份有限公司 光刻胶图案的形成方法和阵列基板的制造方法
JP6456238B2 (ja) * 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN109164677B (zh) * 2018-09-05 2021-12-07 京东方科技集团股份有限公司 光刻方法、柔性基板的制备方法以及光刻胶烘干装置
CN110391135B (zh) * 2019-08-08 2022-02-08 武汉新芯集成电路制造有限公司 去除光刻胶残留的方法及半导体器件的制造方法
CN113658854B (zh) * 2021-10-21 2022-01-28 绍兴中芯集成电路制造股份有限公司 光刻方法和半导体器件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPH10335216A (ja) * 1997-05-30 1998-12-18 Dainippon Screen Mfg Co Ltd 基板処理方法
JP3337020B2 (ja) * 2000-02-04 2002-10-21 日本電気株式会社 半導体装置の製造方法
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP3943828B2 (ja) * 2000-12-08 2007-07-11 東京エレクトロン株式会社 塗布、現像装置及びパターン形成方法
JP4184128B2 (ja) * 2002-03-29 2008-11-19 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及び製造装置、並びに不要膜除去装置
JP3894104B2 (ja) * 2002-11-15 2007-03-14 東京エレクトロン株式会社 現像方法及び現像装置及び現像液再生装置
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4220423B2 (ja) * 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP4521219B2 (ja) * 2004-04-19 2010-08-11 株式会社東芝 描画パターンの生成方法、レジストパターンの形成方法、及び露光装置の制御方法
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置

Also Published As

Publication number Publication date
JP4634822B2 (ja) 2011-02-16
CN1825209A (zh) 2006-08-30
US20060194155A1 (en) 2006-08-31
TWI296128B (enExample) 2008-04-21
TW200727335A (en) 2007-07-16
JP2006235230A (ja) 2006-09-07

Similar Documents

Publication Publication Date Title
CN100474119C (zh) 抗蚀剂图形形成方法和半导体器件的制造方法
JP4476979B2 (ja) 半導体基板の液浸リソグラフィ形成方法および半導体ウェハの処理方法
KR100753270B1 (ko) 액침 노광 방법, 액침형 노광 장치, 및 반도체 장치의 제조방법
JP3857692B2 (ja) パターン形成方法
US20110229826A1 (en) Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus
US20100221672A1 (en) Pattern forming method
CN1898608A (zh) 用于浸入式光刻的可除去薄膜
US7907250B2 (en) Immersion lithography method
US6210846B1 (en) Exposure during rework for enhanced resist removal
TWI566031B (zh) 微細化光阻圖案之形成方法
US20230386837A1 (en) Method of manufacturing semiconductor devices
TWI566047B (zh) 製作半導體裝置的方法與光敏材料
US20090166319A1 (en) System and Method for Performing High Flow Rate Dispensation of a Chemical onto a Photolithographic Component
JP5817271B2 (ja) レジストパターン形成方法
US8148054B2 (en) Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
JP3861851B2 (ja) レジストパターン形成方法および半導体装置の製造方法
JPH09260257A (ja) レンズ汚染を防止した投影露光装置およびそれを用いた半導体デバイス製造プロセス
CN114779580A (zh) 抗蚀剂分配的方法
JP2008227173A (ja) パターン形成方法および基板処理装置
CN100461004C (zh) 浸润式光刻的方法及其处理方法
KR20060057107A (ko) 반도체 스피너 장비
KR20070017061A (ko) 이머션 리소그래피 워터마크 감소
KR20090052072A (ko) 반도체 소자의 패턴 형성 방법
KR20090078086A (ko) 반도체 소자의 제조 방법
KR20070047964A (ko) 반도체 소자의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090401

Termination date: 20120224