JP4634822B2 - レジストパターン形成方法および半導体装置の製造方法 - Google Patents

レジストパターン形成方法および半導体装置の製造方法 Download PDF

Info

Publication number
JP4634822B2
JP4634822B2 JP2005049394A JP2005049394A JP4634822B2 JP 4634822 B2 JP4634822 B2 JP 4634822B2 JP 2005049394 A JP2005049394 A JP 2005049394A JP 2005049394 A JP2005049394 A JP 2005049394A JP 4634822 B2 JP4634822 B2 JP 4634822B2
Authority
JP
Japan
Prior art keywords
exposure
film
resist
substrate
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005049394A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006235230A (ja
Inventor
大輔 河村
剛 柴田
信一 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2005049394A priority Critical patent/JP4634822B2/ja
Priority to TW095105127A priority patent/TW200727335A/zh
Priority to CNB2006100582084A priority patent/CN100474119C/zh
Priority to US11/360,502 priority patent/US20060194155A1/en
Publication of JP2006235230A publication Critical patent/JP2006235230A/ja
Application granted granted Critical
Publication of JP4634822B2 publication Critical patent/JP4634822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005049394A 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法 Expired - Fee Related JP4634822B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005049394A JP4634822B2 (ja) 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法
TW095105127A TW200727335A (en) 2005-02-24 2006-02-15 Method for forming resist pattern, and method for manufacturing semiconductor device
CNB2006100582084A CN100474119C (zh) 2005-02-24 2006-02-24 抗蚀剂图形形成方法和半导体器件的制造方法
US11/360,502 US20060194155A1 (en) 2005-02-24 2006-02-24 Resist pattern forming method and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005049394A JP4634822B2 (ja) 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006235230A JP2006235230A (ja) 2006-09-07
JP4634822B2 true JP4634822B2 (ja) 2011-02-16

Family

ID=36932307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005049394A Expired - Fee Related JP4634822B2 (ja) 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US20060194155A1 (enExample)
JP (1) JP4634822B2 (enExample)
CN (1) CN100474119C (enExample)
TW (1) TW200727335A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP4357514B2 (ja) * 2006-09-29 2009-11-04 株式会社東芝 液浸露光方法
JP4923936B2 (ja) * 2006-10-13 2012-04-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法
JP4813333B2 (ja) * 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
JP4331199B2 (ja) 2006-11-29 2009-09-16 東京エレクトロン株式会社 液浸露光用塗布膜形成装置および塗布膜形成方法
JP2008153450A (ja) 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布膜処理方法および塗布膜処理装置
JP4922858B2 (ja) * 2007-07-30 2012-04-25 株式会社東芝 パターン形成方法及び洗浄装置
JP2009130031A (ja) * 2007-11-21 2009-06-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP5133730B2 (ja) * 2008-02-19 2013-01-30 セイコーインスツル株式会社 圧電振動片の製造方法
JP2009295716A (ja) 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法及び基板処理装置
JP2011082369A (ja) * 2009-10-08 2011-04-21 Toshiba Corp 半導体装置の製造方法及び製造システム
CN102455593B (zh) * 2010-10-25 2013-10-09 京东方科技集团股份有限公司 光刻胶图案的形成方法和阵列基板的制造方法
JP6456238B2 (ja) * 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN109164677B (zh) * 2018-09-05 2021-12-07 京东方科技集团股份有限公司 光刻方法、柔性基板的制备方法以及光刻胶烘干装置
CN110391135B (zh) * 2019-08-08 2022-02-08 武汉新芯集成电路制造有限公司 去除光刻胶残留的方法及半导体器件的制造方法
CN113658854B (zh) * 2021-10-21 2022-01-28 绍兴中芯集成电路制造股份有限公司 光刻方法和半导体器件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPH10335216A (ja) * 1997-05-30 1998-12-18 Dainippon Screen Mfg Co Ltd 基板処理方法
JP3337020B2 (ja) * 2000-02-04 2002-10-21 日本電気株式会社 半導体装置の製造方法
US6689519B2 (en) * 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
JP3943828B2 (ja) * 2000-12-08 2007-07-11 東京エレクトロン株式会社 塗布、現像装置及びパターン形成方法
KR100964772B1 (ko) * 2002-03-29 2010-06-23 호야 가부시키가이샤 포토마스크 블랭크의 제조 방법 및 제조 장치와, 불필요한 막 제거 장치
JP3894104B2 (ja) * 2002-11-15 2007-03-14 東京エレクトロン株式会社 現像方法及び現像装置及び現像液再生装置
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4220423B2 (ja) * 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP4521219B2 (ja) * 2004-04-19 2010-08-11 株式会社東芝 描画パターンの生成方法、レジストパターンの形成方法、及び露光装置の制御方法
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置

Also Published As

Publication number Publication date
JP2006235230A (ja) 2006-09-07
CN100474119C (zh) 2009-04-01
US20060194155A1 (en) 2006-08-31
TWI296128B (enExample) 2008-04-21
CN1825209A (zh) 2006-08-30
TW200727335A (en) 2007-07-16

Similar Documents

Publication Publication Date Title
JP4634822B2 (ja) レジストパターン形成方法および半導体装置の製造方法
US11906897B2 (en) Method for extreme ultraviolet lithography mask treatment
KR100753270B1 (ko) 액침 노광 방법, 액침형 노광 장치, 및 반도체 장치의 제조방법
US8124319B2 (en) Semiconductor lithography process
CN109313395B (zh) 通过使用光剂来进行的临界尺寸控制
US20110229826A1 (en) Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus
KR101216797B1 (ko) 기판 처리 방법, ｅｕｖ 마스크의 제조 방법 및 ｅｕｖ 마스크
US9897910B2 (en) Treating a capping layer of a mask
JP2012256726A (ja) レジスト膜のリワーク方法および半導体装置の製造方法ならびに基板処理システム
KR100935001B1 (ko) 리소그래피 디바이스 제조 방법, 리소그래피 셀, 및 컴퓨터프로그램 제품
JP4753248B2 (ja) マスクブランクス、マスクブランクスの製造方法、転写マスクの製造方法及び半導体装置の製造方法
WO2008024573A1 (en) System and method for performing high flow rate dispensation of a chemical onto a photolithographic component
JP3861851B2 (ja) レジストパターン形成方法および半導体装置の製造方法
US8148054B2 (en) Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
JP4718893B2 (ja) パターン形成方法
KR101080008B1 (ko) 하드마스크용 원판 및 이를 이용한 하드마스크 제조방법
US6613500B1 (en) Reducing resist residue defects in open area on patterned wafer using trim mask
US9535317B2 (en) Treating a capping layer of a mask
KR101023077B1 (ko) 마스크 패턴 형성 방법
TW200848946A (en) Exposure apparatus
KR101179262B1 (ko) 트리톤 위상반전마스크 제조방법
JP2008227173A (ja) パターン形成方法および基板処理装置
JP2001035779A (ja) 微細パターンの形成方法
JPH09292706A (ja) レジストパターン形成方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071211

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101015

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101026

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101119

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131126

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees