CN100437972C - 结合动态弯液面的无应力蚀刻处理 - Google Patents

结合动态弯液面的无应力蚀刻处理 Download PDF

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Publication number
CN100437972C
CN100437972C CNB2004800411022A CN200480041102A CN100437972C CN 100437972 C CN100437972 C CN 100437972C CN B2004800411022 A CNB2004800411022 A CN B2004800411022A CN 200480041102 A CN200480041102 A CN 200480041102A CN 100437972 C CN100437972 C CN 100437972C
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China
Prior art keywords
uniformity
overburden
etch process
dynamic meniscus
overburden portion
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Expired - Fee Related
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CNB2004800411022A
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English (en)
Chinese (zh)
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CN1906752A (zh
Inventor
A·D·贝利三世
M·瑞夫肯
M·克罗立克
P·亚德夫
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNB2004800411022A 2004-01-30 2004-12-30 结合动态弯液面的无应力蚀刻处理 Expired - Fee Related CN100437972C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/769,498 US7078344B2 (en) 2003-03-14 2004-01-30 Stress free etch processing in combination with a dynamic liquid meniscus
US10/769,498 2004-01-30

Publications (2)

Publication Number Publication Date
CN1906752A CN1906752A (zh) 2007-01-31
CN100437972C true CN100437972C (zh) 2008-11-26

Family

ID=34837813

Family Applications (1)

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CNB2004800411022A Expired - Fee Related CN100437972C (zh) 2004-01-30 2004-12-30 结合动态弯液面的无应力蚀刻处理

Country Status (8)

Country Link
US (1) US7078344B2 (https=)
EP (1) EP1709678A1 (https=)
JP (1) JP2007520079A (https=)
KR (1) KR101117050B1 (https=)
CN (1) CN100437972C (https=)
IL (1) IL176808A (https=)
TW (1) TWI286817B (https=)
WO (1) WO2005076347A1 (https=)

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US7632542B2 (en) * 2005-10-26 2009-12-15 University Of Maryland Method for controlling uniformity of thin films fabricated in processing systems
JP4943448B2 (ja) * 2005-11-23 2012-05-30 マテリアルズ・アンド・テクノロジーズ・コーポレーション 基板を保持するための装置及び方法
US7567700B2 (en) * 2006-03-28 2009-07-28 Tokyo Electron Limited Dynamic metrology sampling with wafer uniformity control
US7502709B2 (en) * 2006-03-28 2009-03-10 Tokyo Electron, Ltd. Dynamic metrology sampling for a dual damascene process
US20070238201A1 (en) * 2006-03-28 2007-10-11 Merritt Funk Dynamic metrology sampling with wafer uniformity control
JP4321595B2 (ja) * 2007-01-23 2009-08-26 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体基板の製造方法
JP4924226B2 (ja) * 2007-06-14 2012-04-25 東ソー株式会社 表面加工方法及び表面加工装置
US8051863B2 (en) 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
TWI410710B (zh) * 2010-01-29 2013-10-01 Sureway Technology Co Ltd 玻璃面板之應力消除方法及其治具
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
US20120264300A1 (en) * 2011-04-13 2012-10-18 Nanya Technology Corporation Method of fabricating semiconductor component
JP6091193B2 (ja) * 2011-12-27 2017-03-08 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
CN103187341B (zh) * 2011-12-27 2015-11-18 芝浦机械电子株式会社 基板的处理装置及处理方法
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP2017216443A (ja) * 2016-05-20 2017-12-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 再配線層における均一性を実現するためのシステム及び方法
US12046477B2 (en) * 2021-01-08 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. By-site-compensated etch back for local planarization/topography adjustment
JP2024160726A (ja) * 2023-05-02 2024-11-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
WO2025174684A1 (en) * 2024-02-14 2025-08-21 Lam Research Corporation Spin planarization of gapfill materials

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KR101117050B1 (ko) 2012-02-22
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