CN1823405B - 改良的局部双道金属镶嵌平坦化系统、方法与设备 - Google Patents
改良的局部双道金属镶嵌平坦化系统、方法与设备 Download PDFInfo
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- CN1823405B CN1823405B CN2004800069641A CN200480006964A CN1823405B CN 1823405 B CN1823405 B CN 1823405B CN 2004800069641 A CN2004800069641 A CN 2004800069641A CN 200480006964 A CN200480006964 A CN 200480006964A CN 1823405 B CN1823405 B CN 1823405B
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- planarization
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- 238000000034 method Methods 0.000 title claims abstract description 150
- 230000008569 process Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 238000011049 filling Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 47
- 239000010949 copper Substances 0.000 claims description 45
- 229910052802 copper Inorganic materials 0.000 claims description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 41
- 238000000059 patterning Methods 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical class 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000008030 elimination Effects 0.000 claims description 7
- 238000003379 elimination reaction Methods 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 6
- 230000003252 repetitive effect Effects 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 95
- 239000004020 conductor Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 copper halide Chemical class 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000005749 Copper compound Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/390,520 | 2003-03-14 | ||
US10/390,520 US6821899B2 (en) | 2003-03-14 | 2003-03-14 | System, method and apparatus for improved local dual-damascene planarization |
PCT/US2004/007530 WO2004084267A2 (en) | 2003-03-14 | 2004-03-10 | System, method and apparatus for improved local dual-damascene planarization |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1823405A CN1823405A (zh) | 2006-08-23 |
CN1823405B true CN1823405B (zh) | 2013-03-13 |
Family
ID=32962361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800069641A Expired - Fee Related CN1823405B (zh) | 2003-03-14 | 2004-03-10 | 改良的局部双道金属镶嵌平坦化系统、方法与设备 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6821899B2 (zh) |
EP (1) | EP1611599A4 (zh) |
JP (1) | JP2006520541A (zh) |
KR (1) | KR101094680B1 (zh) |
CN (1) | CN1823405B (zh) |
IL (1) | IL170851A (zh) |
TW (1) | TWI247381B (zh) |
WO (1) | WO2004084267A2 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303462B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
JP4671759B2 (ja) * | 2005-05-18 | 2011-04-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
EP1845554A3 (en) * | 2006-04-10 | 2011-07-13 | Imec | A method to create super secondary grain growth in narrow trenches |
US8191237B1 (en) | 2009-05-21 | 2012-06-05 | Western Digital (Fremont), Llc | Method for providing a structure in a magnetic transducer |
US8262919B1 (en) | 2010-06-25 | 2012-09-11 | Western Digital (Fremont), Llc | Method and system for providing a perpendicular magnetic recording pole using multiple chemical mechanical planarizations |
DK2688485T3 (en) * | 2011-03-22 | 2016-09-26 | Chang He Bio-Medical Science (Yangzhou) Co Ltd | Medical instruments and methods of preparation thereof |
JP2017216443A (ja) * | 2016-05-20 | 2017-12-07 | ラム リサーチ コーポレーションLam Research Corporation | 再配線層における均一性を実現するためのシステム及び方法 |
US9842762B1 (en) * | 2016-11-11 | 2017-12-12 | Globalfoundries Inc. | Method of manufacturing a semiconductor wafer having an SOI configuration |
CN110349835B (zh) * | 2018-04-04 | 2022-04-19 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和半导体器件 |
CN110060928B (zh) * | 2019-04-28 | 2021-09-24 | 上海华虹宏力半导体制造有限公司 | 一种改善平坦化工艺中金属挤压缺陷的方法 |
US12046502B2 (en) | 2019-09-09 | 2024-07-23 | Watlow Electric Manufacturing Company | Electrostatic puck and method of manufacture |
CN112071802B (zh) * | 2020-08-31 | 2023-08-11 | 上海华力集成电路制造有限公司 | 晶圆键合工艺中预防空洞缺陷的方法及其装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051496A (en) * | 1998-09-17 | 2000-04-18 | Taiwan Semiconductor Manufacturing Company | Use of stop layer for chemical mechanical polishing of CU damascene |
US6350364B1 (en) * | 2000-02-18 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method for improvement of planarity of electroplated copper |
US20020117758A1 (en) * | 2001-01-23 | 2002-08-29 | Shyama Mukherjee | Planarizers for spin etch planarization of electronic components and methods of use thereof |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0023146B1 (en) * | 1979-07-23 | 1987-09-30 | Fujitsu Limited | Method of manufacturing a semiconductor device wherein first and second layers are formed |
US5256565A (en) | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
US5098516A (en) | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US6355553B1 (en) * | 1992-07-21 | 2002-03-12 | Sony Corporation | Method of forming a metal plug in a contact hole |
US5387315A (en) | 1992-10-27 | 1995-02-07 | Micron Technology, Inc. | Process for deposition and etching of copper in multi-layer structures |
EP1018149A1 (en) * | 1997-09-18 | 2000-07-12 | CVC Products, Inc. | Method and apparatus for high-performance integrated circuit interconnect fabrication |
US6096230A (en) * | 1997-12-29 | 2000-08-01 | Intel Corporation | Method of planarizing by polishing a structure which is formed to promote planarization |
US5968847A (en) | 1998-03-13 | 1999-10-19 | Applied Materials, Inc. | Process for copper etch back |
US6447668B1 (en) | 1998-07-09 | 2002-09-10 | Acm Research, Inc. | Methods and apparatus for end-point detection |
US6395152B1 (en) | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
US6056864A (en) | 1998-10-13 | 2000-05-02 | Advanced Micro Devices, Inc. | Electropolishing copper film to enhance CMP throughput |
US6234870B1 (en) | 1999-08-24 | 2001-05-22 | International Business Machines Corporation | Serial intelligent electro-chemical-mechanical wafer processor |
US6383935B1 (en) | 2000-10-16 | 2002-05-07 | Taiwan Semiconductor Manufacturing Company | Method of reducing dishing and erosion using a sacrificial layer |
US6417093B1 (en) * | 2000-10-31 | 2002-07-09 | Lsi Logic Corporation | Process for planarization of metal-filled trenches of integrated circuit structures by forming a layer of planarizable material over the metal layer prior to planarizing |
WO2002059966A1 (en) * | 2001-01-23 | 2002-08-01 | Honeywell International Inc. | Planarizers for spin etch planarization of electronic components and methods of use thereof |
CA2456225A1 (en) * | 2001-08-17 | 2003-02-27 | Acm Research, Inc. | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US6939796B2 (en) * | 2003-03-14 | 2005-09-06 | Lam Research Corporation | System, method and apparatus for improved global dual-damascene planarization |
US6739953B1 (en) * | 2003-04-09 | 2004-05-25 | Lsi Logic Corporation | Mechanical stress free processing method |
-
2003
- 2003-03-14 US US10/390,520 patent/US6821899B2/en not_active Expired - Fee Related
-
2004
- 2004-03-10 JP JP2006507109A patent/JP2006520541A/ja not_active Withdrawn
- 2004-03-10 EP EP04719319A patent/EP1611599A4/en not_active Withdrawn
- 2004-03-10 WO PCT/US2004/007530 patent/WO2004084267A2/en active Application Filing
- 2004-03-10 CN CN2004800069641A patent/CN1823405B/zh not_active Expired - Fee Related
- 2004-03-10 KR KR1020057017108A patent/KR101094680B1/ko not_active IP Right Cessation
- 2004-03-12 TW TW093106648A patent/TWI247381B/zh not_active IP Right Cessation
-
2005
- 2005-09-13 IL IL170851A patent/IL170851A/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051496A (en) * | 1998-09-17 | 2000-04-18 | Taiwan Semiconductor Manufacturing Company | Use of stop layer for chemical mechanical polishing of CU damascene |
US6350364B1 (en) * | 2000-02-18 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method for improvement of planarity of electroplated copper |
US20020117758A1 (en) * | 2001-01-23 | 2002-08-29 | Shyama Mukherjee | Planarizers for spin etch planarization of electronic components and methods of use thereof |
Also Published As
Publication number | Publication date |
---|---|
IL170851A (en) | 2010-05-31 |
US6821899B2 (en) | 2004-11-23 |
EP1611599A2 (en) | 2006-01-04 |
TWI247381B (en) | 2006-01-11 |
WO2004084267A2 (en) | 2004-09-30 |
WO2004084267A3 (en) | 2006-02-23 |
KR20050107797A (ko) | 2005-11-15 |
EP1611599A4 (en) | 2007-06-13 |
JP2006520541A (ja) | 2006-09-07 |
TW200421548A (en) | 2004-10-16 |
US20040180545A1 (en) | 2004-09-16 |
KR101094680B1 (ko) | 2011-12-20 |
CN1823405A (zh) | 2006-08-23 |
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