DE69033663T2 - Verfahren zur Behandlung eines Aluminium enthaltenden Musters - Google Patents

Verfahren zur Behandlung eines Aluminium enthaltenden Musters

Info

Publication number
DE69033663T2
DE69033663T2 DE1990633663 DE69033663T DE69033663T2 DE 69033663 T2 DE69033663 T2 DE 69033663T2 DE 1990633663 DE1990633663 DE 1990633663 DE 69033663 T DE69033663 T DE 69033663T DE 69033663 T2 DE69033663 T2 DE 69033663T2
Authority
DE
Germany
Prior art keywords
treating
containing aluminum
pattern containing
pattern
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1990633663
Other languages
English (en)
Other versions
DE69033663D1 (de
Inventor
Ryooji Fukuyama
Yutaka Kakehi
Makoto Nawata
Hironobu Kawahara
Yoshiaki Kudamatsu-Shi Sato
Yoshimi Torii
Akira Kawaraya
Yoshie Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1218523A external-priority patent/JPH0793293B2/ja
Priority claimed from JP1284711A external-priority patent/JP2585442B2/ja
Priority claimed from JP11759690A external-priority patent/JPH0415919A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69033663D1 publication Critical patent/DE69033663D1/de
Publication of DE69033663T2 publication Critical patent/DE69033663T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
DE1990633663 1989-08-28 1990-08-20 Verfahren zur Behandlung eines Aluminium enthaltenden Musters Expired - Fee Related DE69033663T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1218523A JPH0793293B2 (ja) 1989-08-28 1989-08-28 後処理方法
JP1284711A JP2585442B2 (ja) 1989-11-02 1989-11-02 被処理物の連続処理方法
JP11759690A JPH0415919A (ja) 1990-05-09 1990-05-09 後処理方法

Publications (2)

Publication Number Publication Date
DE69033663D1 DE69033663D1 (de) 2000-12-21
DE69033663T2 true DE69033663T2 (de) 2001-06-21

Family

ID=27313413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990633663 Expired - Fee Related DE69033663T2 (de) 1989-08-28 1990-08-20 Verfahren zur Behandlung eines Aluminium enthaltenden Musters

Country Status (4)

Country Link
US (4) US5380397A (de)
EP (2) EP0416774B1 (de)
KR (1) KR0155380B1 (de)
DE (1) DE69033663T2 (de)

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DE69033663T2 (de) * 1989-08-28 2001-06-21 Hitachi Ltd Verfahren zur Behandlung eines Aluminium enthaltenden Musters
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US6682659B1 (en) 1999-11-08 2004-01-27 Taiwan Semiconductor Manufacturing Company Method for forming corrosion inhibited conductor layer
US20020076917A1 (en) * 1999-12-20 2002-06-20 Edward P Barth Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductors
US6852636B1 (en) * 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US6440864B1 (en) 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
KR100373853B1 (ko) * 2000-08-11 2003-02-26 삼성전자주식회사 반도체소자의 선택적 에피택시얼 성장 방법
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US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
US7204669B2 (en) * 2002-07-17 2007-04-17 Applied Materials, Inc. Semiconductor substrate damage protection system
CN1682353A (zh) * 2002-09-18 2005-10-12 马特森技术公司 去除材料的系统和方法
US6920891B2 (en) * 2002-10-05 2005-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Exhaust adaptor and method for chamber de-gassing
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US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
JP4111274B2 (ja) 2003-07-24 2008-07-02 キヤノンアネルバ株式会社 磁性材料のドライエッチング方法
TWI281473B (en) * 2003-12-19 2007-05-21 Ind Tech Res Inst Biomarkers for liver diseases and method for using same
US20060063388A1 (en) * 2004-09-23 2006-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for using a water vapor treatment to reduce surface charge after metal etching
KR100688777B1 (ko) * 2004-12-27 2007-03-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
KR100688778B1 (ko) * 2004-12-27 2007-03-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
KR100608435B1 (ko) * 2004-12-30 2006-08-02 동부일렉트로닉스 주식회사 반도체 소자의 애싱 방법
US7655571B2 (en) * 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
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Also Published As

Publication number Publication date
US5380397A (en) 1995-01-10
EP0416774B1 (de) 2000-11-15
DE69033663D1 (de) 2000-12-21
EP0416774A1 (de) 1991-03-13
EP0809283A2 (de) 1997-11-26
KR0155380B1 (ko) 1998-12-01
KR910005381A (ko) 1991-03-30
US6329298B1 (en) 2001-12-11
US5770100A (en) 1998-06-23
EP0809283A3 (de) 1998-02-25
US5556714A (en) 1996-09-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee