KR910005381A - 시료처리방법 - Google Patents

시료처리방법 Download PDF

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Publication number
KR910005381A
KR910005381A KR1019900013207A KR900013207A KR910005381A KR 910005381 A KR910005381 A KR 910005381A KR 1019900013207 A KR1019900013207 A KR 1019900013207A KR 900013207 A KR900013207 A KR 900013207A KR 910005381 A KR910005381 A KR 910005381A
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South Korea
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gas
plasma
sample processing
component
oxygen
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KR1019900013207A
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KR0155380B1 (ko
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료우지 후꾸야마
마고또 나와다
히 유다까 가께
히로노브 가와하라
요시아끼 사또오
이 요시미 도리
야 아끼라 가와라
요시에 사또오
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미다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Priority claimed from JP1218523A external-priority patent/JPH0793293B2/ja
Priority claimed from JP1284711A external-priority patent/JP2585442B2/ja
Priority claimed from JP11759690A external-priority patent/JPH0415919A/ja
Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌 세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR910005381A publication Critical patent/KR910005381A/ko
Application granted granted Critical
Publication of KR0155380B1 publication Critical patent/KR0155380B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

시료처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 실시하기 위한 장치의 일레를 나타낸 평면도이다.

Claims (18)

  1. 할로겐 가스를 사용하여 Al함유 배선재료의 시료를 에칭하는 단계, 산소성분을 갖는 가스를 사용하여 레지스트를 제거하는 단계, 그리고 수소성분을 갖는 가스를 사용하여 부식방지 처리를 하는 단계를 포함하는 시료처리방법.
  2. 제1항에 있어서, 레지스트는 산소성분을 갖는 가스의 플라즈마를 사용하여 제거하는 시료처리방법.
  3. 제2항에 있어서, 산소성분을 갖는 가스가 산소(O2) 가스 또는 산소(O2)와 불소계 가스와의 혼합가스인 시료처리방법.
  4. 제1항에 있어서, 부식방지 처리를 수소성분을 갖는 가스의 플라즈마를 사용하여 수행하는 시료처리방법.
  5. 제4항에 있어서, 수소성분을 갖는 가스가 메탄올(CH3OH), 에탄올(C2H5OH), 아세톤(CH3COCH3), 수소(H2), 또는 메탄(CH4) 또는 이들 가스와 불활성 가스, H2O, O2또는 O3중 어느 하나로 구성된 혼합가스중 어느하나인 시료처리방법.
  6. 제1항에 있어서, 부식방지처리는 수소성분을 갖는 가스를 시료상에서 액적으로 액화하고, 액적이 다시 기화하도록 수행하는 시료처리방법.
  7. 제6항에 있어서, 수소성분을 갖는 가스가 순수(H2O)의 기화가스인 시료처리방법.
  8. 알루미늄-함유 배선재료의 시료를 할로겐 가스를 사용하여 에칭하는단계, 적어도 수소성분을 갖는 플라즈마를 사용하여 처리하는 단계, 그리고 산소성분을 갖는 플라즈마를 사용하여 처리하는 단계를 포함하는 시료처리방법.
  9. 제8항에 있어서, 레지스트를 산소성분을 갖는 플라즈마를 사용하여 제1단계에서 제거하고, 부식방지 처리는 수소성분을 갖는 플라즈마를 사용하여 제2단계에서 수행하는 시료처리방법.
  10. 제8항에 있어서, 부식방지처리는 수소성분을 갖는 플리즈마를 사용하여 제1단계에서 수행하고, 레지스트는 산소성분을 갖는 플라즈마를 사용하여 제2단계에서 제거하는 시료처리방법.
  11. 제8항, 제9항 및 제10항중 어느 한항에 있어서, 수소성분을 갖는 플라즈마는 메탄올(CH3OH), 에탄올(C2H5OH), 아세톤(CH3COCH3), 수소(H2) 또는 메탄(CH4)중 어느하나의 가스 플라즈마 또는 이들 가스와 불활성가스, N2O, O2또는 O3중 어느 하나와의 혼합가스 플라즈마인 시료처리방법.
  12. 제8항, 제9항 및 제10항중 어느 한항에 있어서, 산소성분을 갖는 플라즈마가 산소(O2)가스 플라즈마 또는 산소(O2)와 불소계 가스와의 혼합가스의 플라즈마인 시료처리방법.
  13. 알루미늄-함유 배선재료의 시료를 할로겐 가스를 사용하여 에칭하는 단계, 적어도 수소성분 및 산소성분 을 갖는 플라즈마를 사용하여 부식 방지 처리를 수행하는 단계를 포함하는 시료처리방법.
  14. 제13항에 있어서, 수소성분 및 산소성분을 갖는 플라즈마가 메탄올(CH3OH), 에탄올(C2H5OH), 아세톤(CH3COCH3), 수소(H2) 또는 메탄(CH4)중 어느 하나와 산소(O2), O3또는 N2O중 어느 하나와의 혼합가스 플라즈마인 시료처리방법.
  15. 제13항에 잇어서, 플라즈마를 사용하여 처리한후, 산소 및 불소계 가스와의 혼합가스 플라즈마를 사용하여 처리하는 단계를 추가하는 시료처리방법.
  16. 제2항, 제4항, 제8항 및 제13항중 어느 한 항에 있어서, 플라즈마를 마이크로파를 사용하여 발생시키는 시료처리방법.
  17. 제16항에 있어서, 플라즈마를 0.4 내지 2토로의 처리 알력하에 200W 내지 4KW의 마이크로파 전력을 사용하여 발생시키는 시료처리장치.
  18. 제8항 또는 제13항에 있어서, 알루미늄-함유 배선재료를 100 내지 300℃의 온도에서 처리하는 시료처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900013207A 1989-08-28 1990-08-27 시료처리방법 KR0155380B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP89-218523 1989-08-28
JP1218523A JPH0793293B2 (ja) 1989-08-28 1989-08-28 後処理方法
JP89-284711 1989-11-02
JP1284711A JP2585442B2 (ja) 1989-11-02 1989-11-02 被処理物の連続処理方法
JP90-117596 1990-05-09
JP11759690A JPH0415919A (ja) 1990-05-09 1990-05-09 後処理方法

Publications (2)

Publication Number Publication Date
KR910005381A true KR910005381A (ko) 1991-03-30
KR0155380B1 KR0155380B1 (ko) 1998-12-01

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US (4) US5380397A (ko)
EP (2) EP0416774B1 (ko)
KR (1) KR0155380B1 (ko)
DE (1) DE69033663T2 (ko)

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EP0809283A3 (en) 1998-02-25
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US6329298B1 (en) 2001-12-11
EP0416774B1 (en) 2000-11-15
DE69033663T2 (de) 2001-06-21
US5556714A (en) 1996-09-17
KR0155380B1 (ko) 1998-12-01
US5380397A (en) 1995-01-10
DE69033663D1 (de) 2000-12-21
US5770100A (en) 1998-06-23

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