KR950021200A - 포토레지스트 제거 방법 - Google Patents
포토레지스트 제거 방법 Download PDFInfo
- Publication number
- KR950021200A KR950021200A KR1019940035228A KR19940035228A KR950021200A KR 950021200 A KR950021200 A KR 950021200A KR 1019940035228 A KR1019940035228 A KR 1019940035228A KR 19940035228 A KR19940035228 A KR 19940035228A KR 950021200 A KR950021200 A KR 950021200A
- Authority
- KR
- South Korea
- Prior art keywords
- resist
- plasma
- temperature
- etched
- minutes
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000001020 plasma etching Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims abstract 10
- 239000007789 gas Substances 0.000 claims abstract 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 기판(1)상에 형성되고 부식 가스 플라즈마 에칭으로 한정되는 패턴을 갖는 금속막(16)으로부터 포토레지스트를 제거하는 방법에 관한 것이다. 상기 방법은 포토레지스트 내에 흡수되는 모든 잔여 부식 가스를 제거하기에 충분한 고온 및 금속이 역류하기 시작하는 온도 이하에서 시간 주기동안 산소 가스 플라즈마 레지스트(20)를 에칭하는 단계를 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명을 수행하는데 적합한 플라즈마 에칭 장치(plasma etching apparatus)의 단면도,
제3도 및 제4도는 플라즈마 에칭의 시간 및 온도와, 관측 금속 스테이닝
(st-aining)과의 관계를 나타내는 도표도.
Claims (8)
- 기판상에 형성되고, 부식 가스 플라즈마에 의해 한정 패턴을 갖는 금속막으로부터 포토레지스트를 제거하는 방법으로, 포토레지스트에 흡수된 모든 잔여 부식 가스를 거의 제거하기에 충분한 고온 및 금속을 역류시키기 시작하는 온도이하에서 시간주기에 대한 산소 가스 플라즈마에 있어 레지스트를 플라즈마 에칭하는 단계를 포함하는 것을 특징으로 하는 포토레지스트 제거방법.
- 제1항에 있어서, 온도가 적어도 270℃인 것을 특징으로 하는 포토레지스트 제거 방법.
- 제2항에 있어서, 온도가 적어도 300℃인 것을 특징으로 하는 포토레지스트 제거 방법.
- 선택하는 항 중 어느 한 항에 있어서, 상기 레지스트가 적어도 2분동안 플라즈마 에칭되는 것을 특징으로 하는 포토레지스트 제거 방법.
- 제4항에 있어서, 상기 레지스트가 적어도 3분동안 플라즈마 에칭되는 것을 특징으로 하는 포토레지스트 제거 방법.
- 선행하는 항 중 어느 한 항에 있어서, 상기 레지스트가 300℃에서 3분동안 에칭되는 것을 특징으로 하는 레지스트 제거 방법.
- 선행하는 항 중 어느 한 항에 있어서, 상기 레지스트는 단일 웨이퍼 플라즈마 에칭기에서 에칭되고, 또한 이 에칭기 내부에서 가열 척(chuck)상에 배치됨으로써 가열되는 것을 특징으로 하는 레지스트 제거 방법.
- 선행하는 항 중 어느 한 항에 있어서, 상기 레지스트가 알루미늄 패턴으로부터 제거되는 것을 특징으로 하는레지스트 제거 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9326310A GB2285141B (en) | 1993-12-23 | 1993-12-23 | Method of removing photo resist |
GB9326310.1 | 1993-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021200A true KR950021200A (ko) | 1995-07-26 |
Family
ID=10747105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035228A KR950021200A (ko) | 1993-12-23 | 1994-12-20 | 포토레지스트 제거 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5496438A (ko) |
EP (1) | EP0660190A1 (ko) |
JP (1) | JPH07201792A (ko) |
KR (1) | KR950021200A (ko) |
GB (1) | GB2285141B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
US5888309A (en) * | 1997-12-29 | 1999-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma |
US6218310B1 (en) * | 1998-05-12 | 2001-04-17 | Advanced Micro Devices, Inc. | RTA methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile |
US6429142B1 (en) | 1999-02-23 | 2002-08-06 | Taiwan Semiconductor Manufacturing Company | In-situ photoresist removal by an attachable chamber with light source |
US6664194B1 (en) | 1999-03-18 | 2003-12-16 | Taiwan Semiconductor Manufacturing Company | Photoexposure method for facilitating photoresist stripping |
KR100450332B1 (ko) * | 2001-12-22 | 2004-10-01 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | 리플로우에 의해 하부층으로부터 패터닝된 층을 제거하는방법 |
CN108281427A (zh) * | 2017-01-06 | 2018-07-13 | 中芯国际集成电路制造(上海)有限公司 | 闪存器件及其制造方法 |
JP6841198B2 (ja) * | 2017-09-28 | 2021-03-10 | 豊田合成株式会社 | 発光素子の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1032392A (en) * | 1973-10-23 | 1978-06-06 | Eugene D. Feit | High energy radiation curable resist and preparatory process |
US4348473A (en) * | 1981-03-04 | 1982-09-07 | Xerox Corporation | Dry process for the production of microelectronic devices |
CS250295B1 (en) * | 1985-06-10 | 1987-04-16 | Pavel Jancik | Method of polymer removal forming pattern of printing plates especially rotating ones for silk-screen printing and device for realization of this method |
DE3624384A1 (de) * | 1985-07-19 | 1987-01-29 | Fusion Systems Corp | Vorrichtung zum entfernen einer photoresistschicht von einem substrat |
DE3855636T2 (de) * | 1987-08-28 | 1997-03-27 | Toshiba Kawasaki Kk | Plasma-Entschichtungsverfahren für organische und anorganische Schichten |
US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
US5248384A (en) * | 1991-12-09 | 1993-09-28 | Taiwan Semiconductor Manufacturing Company | Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process |
-
1993
- 1993-12-23 GB GB9326310A patent/GB2285141B/en not_active Expired - Fee Related
-
1994
- 1994-11-25 EP EP94118581A patent/EP0660190A1/en not_active Withdrawn
- 1994-12-09 US US08/353,472 patent/US5496438A/en not_active Expired - Lifetime
- 1994-12-14 JP JP6332425A patent/JPH07201792A/ja active Pending
- 1994-12-20 KR KR1019940035228A patent/KR950021200A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH07201792A (ja) | 1995-08-04 |
GB9326310D0 (en) | 1994-02-23 |
US5496438A (en) | 1996-03-05 |
EP0660190A1 (en) | 1995-06-28 |
GB2285141B (en) | 1998-03-11 |
GB2285141A (en) | 1995-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |