DE3855636T2 - Plasma-Entschichtungsverfahren für organische und anorganische Schichten - Google Patents

Plasma-Entschichtungsverfahren für organische und anorganische Schichten

Info

Publication number
DE3855636T2
DE3855636T2 DE19883855636 DE3855636T DE3855636T2 DE 3855636 T2 DE3855636 T2 DE 3855636T2 DE 19883855636 DE19883855636 DE 19883855636 DE 3855636 T DE3855636 T DE 3855636T DE 3855636 T2 DE3855636 T2 DE 3855636T2
Authority
DE
Germany
Prior art keywords
organic
stripping process
inorganic layers
plasma stripping
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19883855636
Other languages
English (en)
Other versions
DE3855636D1 (de
Inventor
Nobuo Hayaska
Tsunetoshi Arikada
Haruo Okano
Keiji Horioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62242660A external-priority patent/JPS6486521A/ja
Priority claimed from JP2515588A external-priority patent/JPH01200628A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3855636D1 publication Critical patent/DE3855636D1/de
Publication of DE3855636T2 publication Critical patent/DE3855636T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
DE19883855636 1987-08-28 1988-08-29 Plasma-Entschichtungsverfahren für organische und anorganische Schichten Expired - Lifetime DE3855636T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP21308287 1987-08-28
JP62242660A JPS6486521A (en) 1987-09-29 1987-09-29 Dry etching
JP2515588A JPH01200628A (ja) 1988-02-05 1988-02-05 ドライエッチング方法
JP13038588 1988-05-30

Publications (2)

Publication Number Publication Date
DE3855636D1 DE3855636D1 (de) 1996-12-05
DE3855636T2 true DE3855636T2 (de) 1997-03-27

Family

ID=27458261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883855636 Expired - Lifetime DE3855636T2 (de) 1987-08-28 1988-08-29 Plasma-Entschichtungsverfahren für organische und anorganische Schichten

Country Status (2)

Country Link
EP (1) EP0305946B1 (de)
DE (1) DE3855636T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10114861A1 (de) * 2001-03-26 2002-10-24 Infineon Technologies Ag Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961820A (en) * 1988-06-09 1990-10-09 Fujitsu Limited Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
EP0809283A3 (de) * 1989-08-28 1998-02-25 Hitachi, Ltd. Verfahren zur Behandlung von Scheiben
EP0489179B1 (de) * 1990-06-27 2001-11-14 Fujitsu Limited Verfahren zum herstellen eines integrierten halbleiterschaltkreises
JP2731730B2 (ja) * 1993-12-22 1998-03-25 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストの除去方法
GB2285141B (en) * 1993-12-23 1998-03-11 Motorola Ltd Method of removing photo resist
US5900351A (en) * 1995-01-17 1999-05-04 International Business Machines Corporation Method for stripping photoresist
TW376551B (en) * 1996-08-07 1999-12-11 Matsushita Electric Ind Co Ltd Aftertreatment method of dry etching and process of manufacturing semiconductor device
WO1998021749A1 (fr) * 1996-11-14 1998-05-22 Tokyo Electron Limited Procede de nettoyage d'un dispositif de traitement au plasma et procede de traitement au plasma
US5861064A (en) * 1997-03-17 1999-01-19 Fsi Int Inc Process for enhanced photoresist removal in conjunction with various methods and chemistries
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
WO2001059825A1 (en) * 2000-02-08 2001-08-16 Matrix Integrated Systems, Inc. Method for removing photoresist and residues from semiconductor device surfaces
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6939409B2 (en) 2000-12-18 2005-09-06 Sumitomo Precision Products Co., Ltd. Cleaning method and etching method
EP1343206B1 (de) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung, elektronische Vorrichtung, Beleuchtungsvorrichtung und Herstellungsverfahren der lichtemittierenden Vorrichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
US4501061A (en) * 1983-05-31 1985-02-26 Advanced Micro Devices, Inc. Fluorine plasma oxidation of residual sulfur species
JPS6245122A (ja) * 1985-08-23 1987-02-27 Hitachi Ltd 処理装置
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
JPH0773104B2 (ja) * 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10114861A1 (de) * 2001-03-26 2002-10-24 Infineon Technologies Ag Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat
DE10114861B4 (de) * 2001-03-26 2004-02-26 Infineon Technologies Ag Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat

Also Published As

Publication number Publication date
EP0305946A3 (de) 1990-09-26
EP0305946B1 (de) 1996-10-30
DE3855636D1 (de) 1996-12-05
EP0305946A2 (de) 1989-03-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)