KR960001907A - 식각잔류물 제거방법 - Google Patents

식각잔류물 제거방법 Download PDF

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Publication number
KR960001907A
KR960001907A KR1019940012720A KR19940012720A KR960001907A KR 960001907 A KR960001907 A KR 960001907A KR 1019940012720 A KR1019940012720 A KR 1019940012720A KR 19940012720 A KR19940012720 A KR 19940012720A KR 960001907 A KR960001907 A KR 960001907A
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KR
South Korea
Prior art keywords
residues
etching
dry
gas
etch residues
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Application number
KR1019940012720A
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English (en)
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KR0137841B1 (ko
Inventor
김재정
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019940012720A priority Critical patent/KR0137841B1/ko
Priority to JP7134860A priority patent/JP2731750B2/ja
Publication of KR960001907A publication Critical patent/KR960001907A/ko
Priority to US08/882,096 priority patent/US5873948A/en
Application granted granted Critical
Publication of KR0137841B1 publication Critical patent/KR0137841B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 잔류물제거를 위한 공정이 간단하며 메탈의 부식이나 어택을 방지하는 식각잔류물 제거방법의 제공에 그 목적이 있다.
건식식각공정에서 식각 후 잔류부산물 및 불필요한 포토레지스트의 제거하고 공정이 간단하며 메탈의 부식이나 어택을 방지하는 식각잔류물 제거방법에 관한 것으로서, 건식식각 후의 식각잔류물 및 포토레지스트를 제거하는 방법에 있어서, 하나 이상의 개스화합물을 사용하여 드라이케미컬을 구성하고, 이 드라이케미컬의 임계점이상의 조건에서 식각잔류물을 제거하는 것이 특징인 식각잔류물 제거방법.

Description

식각잔류물 제거방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 건식식각 후의 식각잔류물 및 포토레지스트를 제거하는 방법에 있어서, 하나 이상의 개스화합물을 사용하여 드라이케미컬을 구성하고, 이 드라이케미컬의 임계점 이상의 조건에서 식각잔류물을 제거하는 것이 특징인 식각잔류물제거방법.
  2. 제1항에 있어서, 상기 드라이케미컬을 구성하는 개스화합물은 임계점 이상의 조건에서 흡착계수가 급격하게 증가하는 것이 특징인 식각잔류물 제거방법.
  3. 제2항에 있어서, 상기 개스화합물은 이산화탄소인 것이 특징인 식각잔류물 제거방법.
  4. 제2항에 있어서, 상기 개스화합물은 이산화탄소와, 메틸알콜, DMSO, DMFA, THF, 산소등의 개스 중에서 하나 이상을 선택하여 함께 사용하는 것이 특징인 식각잔류물 제거방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940012720A 1994-06-07 1994-06-07 식각잔류물 제거방법 KR0137841B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940012720A KR0137841B1 (ko) 1994-06-07 1994-06-07 식각잔류물 제거방법
JP7134860A JP2731750B2 (ja) 1994-06-07 1995-06-01 エッチング残留物除去方法
US08/882,096 US5873948A (en) 1994-06-07 1997-06-24 Method for removing etch residue material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012720A KR0137841B1 (ko) 1994-06-07 1994-06-07 식각잔류물 제거방법

Publications (2)

Publication Number Publication Date
KR960001907A true KR960001907A (ko) 1996-01-26
KR0137841B1 KR0137841B1 (ko) 1998-04-27

Family

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Family Applications (1)

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Country Status (3)

Country Link
US (1) US5873948A (ko)
JP (1) JP2731750B2 (ko)
KR (1) KR0137841B1 (ko)

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Also Published As

Publication number Publication date
JPH08191063A (ja) 1996-07-23
US5873948A (en) 1999-02-23
JP2731750B2 (ja) 1998-03-25
KR0137841B1 (ko) 1998-04-27

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