SE8902391L - Foerfarande jaemte anordning foer att behandla kiselplattor - Google Patents

Foerfarande jaemte anordning foer att behandla kiselplattor

Info

Publication number
SE8902391L
SE8902391L SE8902391A SE8902391A SE8902391L SE 8902391 L SE8902391 L SE 8902391L SE 8902391 A SE8902391 A SE 8902391A SE 8902391 A SE8902391 A SE 8902391A SE 8902391 L SE8902391 L SE 8902391L
Authority
SE
Sweden
Prior art keywords
reactor
silicon plate
procedural
treatment
cold
Prior art date
Application number
SE8902391A
Other languages
English (en)
Other versions
SE8902391D0 (sv
SE465100B (sv
Inventor
R Buchta
Original Assignee
Im Stiftelsen Foer Mikroelektr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Im Stiftelsen Foer Mikroelektr filed Critical Im Stiftelsen Foer Mikroelektr
Priority to SE8902391A priority Critical patent/SE465100B/sv
Publication of SE8902391D0 publication Critical patent/SE8902391D0/sv
Priority to JP2510067A priority patent/JPH05500436A/ja
Priority to PCT/SE1990/000463 priority patent/WO1991000613A1/en
Publication of SE8902391L publication Critical patent/SE8902391L/sv
Publication of SE465100B publication Critical patent/SE465100B/sv
Priority to US08/155,154 priority patent/US5491112A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
SE8902391A 1989-06-30 1989-06-30 Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva SE465100B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE8902391A SE465100B (sv) 1989-06-30 1989-06-30 Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva
JP2510067A JPH05500436A (ja) 1989-06-30 1990-06-27 シリコン板を処理する方法と装置
PCT/SE1990/000463 WO1991000613A1 (en) 1989-06-30 1990-06-27 A method and arrangement for treating silicon plates
US08/155,154 US5491112A (en) 1989-06-30 1993-11-19 Method and arrangement for treating silicon plates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8902391A SE465100B (sv) 1989-06-30 1989-06-30 Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva

Publications (3)

Publication Number Publication Date
SE8902391D0 SE8902391D0 (sv) 1989-06-30
SE8902391L true SE8902391L (sv) 1990-12-31
SE465100B SE465100B (sv) 1991-07-22

Family

ID=20376455

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8902391A SE465100B (sv) 1989-06-30 1989-06-30 Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva

Country Status (4)

Country Link
US (1) US5491112A (sv)
JP (1) JPH05500436A (sv)
SE (1) SE465100B (sv)
WO (1) WO1991000613A1 (sv)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304405A (en) * 1991-01-11 1994-04-19 Anelva Corporation Thin film deposition method and apparatus
SE9300742L (sv) * 1993-03-05 1994-04-18 Stiftelsen Inst Foer Mikroelek Kallväggsreaktor för värmning av kiselskivor med mikrovågsenergi
US5501740A (en) * 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
JP3094816B2 (ja) * 1994-10-25 2000-10-03 信越半導体株式会社 薄膜の成長方法
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
US6030666A (en) * 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US8075789B1 (en) 1997-07-11 2011-12-13 Applied Materials, Inc. Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
US6274058B1 (en) 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
US6172322B1 (en) * 1997-11-07 2001-01-09 Applied Technology, Inc. Annealing an amorphous film using microwave energy
US6013316A (en) 1998-02-07 2000-01-11 Odme Disc master drying cover assembly
US6086952A (en) * 1998-06-15 2000-07-11 Applied Materials, Inc. Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer
WO1999067817A1 (en) 1998-06-22 1999-12-29 Applied Materials, Inc. Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion
US6107184A (en) * 1998-12-09 2000-08-22 Applied Materials, Inc. Nano-porous copolymer films having low dielectric constants
US6362115B1 (en) 1998-12-09 2002-03-26 Applied Materials, Inc. In-situ generation of p-xylyiene from liquid precursors
KR20030078550A (ko) * 2002-03-30 2003-10-08 주식회사 하이닉스반도체 반응기의 세정 방법
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
CN105112889A (zh) * 2015-08-28 2015-12-02 东北大学 一种利用微波加热的化学气相沉积方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2965333D1 (en) * 1978-12-29 1983-06-09 Ncr Co Process and apparatus for cleaning wall deposits from a film deposition furnace tube
JPS58177469A (ja) * 1982-04-09 1983-10-18 Fujitsu Ltd 半導体基板の加熱方法及び加熱装置
JPS59125621A (ja) * 1982-12-28 1984-07-20 Fujitsu Ltd 半導体製造装置
JPS59181530A (ja) * 1983-03-31 1984-10-16 Komatsu Ltd 半導体製造装置の洗浄方法及び洗浄装置
US4529621A (en) * 1983-10-05 1985-07-16 Utah Computer Industries, Inc. Process for depositing a thin-film layer of magnetic material onto an insulative dielectric layer of a semiconductor substrate
US4522149A (en) * 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process
US4778559A (en) * 1986-10-15 1988-10-18 Advantage Production Technology Semiconductor substrate heater and reactor process and apparatus
DE3739895A1 (de) * 1986-12-01 1988-06-16 Korea Res Inst Chem Tech Verfahren und vorrichtung zur herstellung hochreinen silicium
DE3742110C2 (de) * 1986-12-12 1996-02-22 Canon Kk Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren
JP2532227B2 (ja) * 1987-01-29 1996-09-11 電気興業株式会社 炭素皮膜の気相合成装置

Also Published As

Publication number Publication date
JPH05500436A (ja) 1993-01-28
US5491112A (en) 1996-02-13
SE8902391D0 (sv) 1989-06-30
SE465100B (sv) 1991-07-22
WO1991000613A1 (en) 1991-01-10

Similar Documents

Publication Publication Date Title
SE8902391L (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
KR930008960A (ko) 반도체 기판의 제조방법 및 그 장치
DE3875815D1 (de) Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode.
WO2003060184A3 (en) Method and apparatus for forming silicon containing films
EP0327406A3 (en) Plasma processing method and apparatus for the deposition of thin films
JPS5747876A (en) Plasma etching apparatus and method
EP0823279A3 (en) Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
TW363086B (en) A CVD apparatus and CVD method
DE60041341D1 (de) Gepulstes plasmabehandlungsverfahren und vorrichtung
KR900013595A (ko) 플라즈마 에칭방법 및 장치
DE60030905D1 (de) Verfahren zur anisotropen Ätzung von Substraten
JPS5713174A (en) Reactive sputtering method
JPS63115338A (ja) 低温ドライエツチング方法及びその装置
JPS56123377A (en) Plasma cleaning and etching method
ES8603114A1 (es) Aparato perfeccionado de deposicion por descarga luminiscente, utilizable particularmente en la produccion de dispositivos fotovoltaicos, y metodo correspondiente.
JPH07272897A (ja) マイクロ波プラズマ装置
DE3778794D1 (de) Verfahren und vorrichtung zum ausbilden einer schicht durch plasmachemischen prozess.
JPS5587438A (en) Manufacture of semiconductor device
JPS57200569A (en) Apparatus for treating surface with gas decomposed by light
JPS6423537A (en) Plasma processing device
JPS55164072A (en) Coating
JPS5477573A (en) Operating method of plasma treating apparatus
JPS647623A (en) Cleaning method for si surface by dry type
JPS57118635A (en) Manufacture of semiconductor device
JPS61251038A (ja) プラズマｃｖｄ装置

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 8902391-5

Format of ref document f/p: F

NUG Patent has lapsed

Ref document number: 8902391-5

Format of ref document f/p: F