KR930008960A - 반도체 기판의 제조방법 및 그 장치 - Google Patents

반도체 기판의 제조방법 및 그 장치 Download PDF

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KR930008960A
KR930008960A KR1019920001381A KR920001381A KR930008960A KR 930008960 A KR930008960 A KR 930008960A KR 1019920001381 A KR1019920001381 A KR 1019920001381A KR 920001381 A KR920001381 A KR 920001381A KR 930008960 A KR930008960 A KR 930008960A
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Prior art keywords
electrodes
semiconductor substrate
manufacturing
semiconductor wafer
alternating current
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KR1019920001381A
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KR970003906B1 (ko
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쯔요시 무라이
시게아끼 나까무라
도시노리 고나까
시게루 미즈노
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마쯔미야 리쯔오
엠.세텍 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

<목적> 반도체 웨이퍼 표면에 매우 얕은 불순물 확산층을 간편하게 형성하는 방법 및 그 장치를 제공하는 것.
<구성> 저압으로 유지된 불순물 가스 함유 불활성 가스 분위기내에 설치된 한쌍의 대향 전극(41, 42)간에 반도체 웨이퍼(5)를 배치함과 더불어 상기 전극(41, 42)간에 저주파 교류(3)을 인가해서 그 전극간에 프라즈마를 생기게하고, 상기 반도체 웨이퍼(5)의 표면에 불순물 이온을 주입하므로서 예컨데 0.1㎛이하의 얕은 불순물 확산층을 형성한다.

Description

반도체 기판의 제조방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법을 실시하는 반도체 기판의 제조장치의 1예의 구성 개략도,
제2도는 제1도의 장치에 의해 반도체 웨이퍼에 주입되는 불순물이 농도 분포를 설명하는 그래프,
제3도는 본 발명의 방법을 실시하는 반도체 기판의 제조장치의 다른 예의 구성 개략도.

Claims (6)

  1. 저압으로 사용된 불순물 가스 함유 불활성 가스 분위기내에 설치된 한쌍의 대향 전극간에 반도체 웨이퍼를 배치함과 더불어 상기 전극간에 저주파 교류를 인가해서 그 전극간에 프라즈마를 생기게 하고 상기 반도체 웨이퍼의 표면에 불순물 이온을 주입하므로서 불순물 확산층을 형성하는 것을 특징으로 하는 반도체 기판의 제조방법.
  2. 제1항에 있서, 불순물 가스 함유 불활성 가스 분위기의 압력이 0.01~1Torr인가되는 교류가 1㎐~수㎑의 저주파 교류인 반도체 기판의 제조방법.
  3. 가스 도입로 및 가스 배기로를 구비한 진공 용기와 그 진공 용기외에 설치되는 저주파 교류 전원과, 상기 진공 용기내에 대향해서 배치되며, 또한 상기 저주파 교류 전원에 접속 가능하게 구성된 한쌍의 평행 평판 전극과 그 전극중 어느 한쪽의 대향면상에 또는 이들의 전극간중의 어느 하나에 반도체 웨이퍼를 유지하는 웨이퍼 유지수단을 구비하고 이루는 반도체 기판의 제조장치.
  4. 제3항에 있어서, 웨이퍼 유지 수단이 없고, 반도체 웨이퍼가 1씩의 대향 전극중의 어느 한쪽의 대향면에 재치되는 구성인 반도체 기판의 제조장치.
  5. 제3항 또는 제4항에 있어서, 반도체 웨이퍼를 냉각 및 가열하는 온조 수단을 구비하고 이루는 반도체 기판의 제조장치.
  6. 제3항 내지 제5항 중 어느 한 항에 있어서, 진공 용기가 전극간에 유지 또는 한쪽의 재치되는 반도체 웨이퍼를 그 진공 용기외로부터 복사 가열 가능한 창을 가짐더불어 이 창의 근처에 복사열을 발생하는 복사열 발생수단을 구비한 것을 특징으로 하는 반도체 기판의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920001381A 1991-10-08 1992-01-30 반도체 기판의 제조 방법 및 그 장치 KR970003906B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03290508A JP3119693B2 (ja) 1991-10-08 1991-10-08 半導体基板の製造方法及びその装置
JP91-290508 1991-10-08

Publications (2)

Publication Number Publication Date
KR930008960A true KR930008960A (ko) 1993-05-22
KR970003906B1 KR970003906B1 (ko) 1997-03-22

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US (1) US5270250A (ko)
EP (1) EP0537379A1 (ko)
JP (1) JP3119693B2 (ko)
KR (1) KR970003906B1 (ko)

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Publication number Publication date
JPH05102058A (ja) 1993-04-23
EP0537379A1 (en) 1993-04-21
KR970003906B1 (ko) 1997-03-22
JP3119693B2 (ja) 2000-12-25
US5270250A (en) 1993-12-14

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