KR880014650A - 플라즈마 도핑방법 - Google Patents

플라즈마 도핑방법 Download PDF

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Publication number
KR880014650A
KR880014650A KR1019880006315A KR880006315A KR880014650A KR 880014650 A KR880014650 A KR 880014650A KR 1019880006315 A KR1019880006315 A KR 1019880006315A KR 880006315 A KR880006315 A KR 880006315A KR 880014650 A KR880014650 A KR 880014650A
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substrate
plasma
vacuum chamber
doping method
plasma doping
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KR1019880006315A
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KR920004515B1 (ko
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분지 미즈노
마사후미 구보다
이찌로 나까야마
마즈오 단노
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다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

내용 없음

Description

플라즈마 도핑방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도 및 제6도는 본 발명 실시예에 의한 플라즈마 도핑방법에 사용된 플라즈마 도핑장치의 구성도, 제5도a∼제5도c는 실시예에 의한 LSI제조공정을 도시하는 개략단면도.

Claims (15)

  1. 진공챔버내에 설치된 시료대 위에, 개구부를 가진 레지스트에 의해 도포된 기판을 놓고, 특정원소를 함유한 가스를 상기 진공챔버에 도입하여 플라즈마를 발생하고, 기판표면온도를 상기 플라즈마에 의해 레지스트의 내열한계를 초과하지 않도록 상기 진공챔버내의 진공도를 5×10-2Torr 이상으로 유지하고, 상기 기판상에 남아있는 상기 레지스트를 구비하고 상기 특정원소를 함유하는 불순물을 상기기판에 도입하는 공정으로 이루어진 것을 특징으로 하는 플라즈마 도핑방법.
  2. 제1항에 있어서, 플라즈마는 고주파방전을 사용하여 발생되는 것을 특징으로 하는 플라즈마 도핑방법.
  3. 제1항에 있어서, 플라즈마는 5×10-3Torr 이상 유지된 진공도를 구비하고, 고주파수 및 자장에 의해 발생되는 것을 특징으로 하는 플라즈마 도핑방법.
  4. 제3항에 있어서, 고주파수는 마이크로파를 사용하는 것을 특징으로 하는 플라즈마 도핑방법.
  5. 제3항에 있어서, 자장은 전자사이클론 공명조건을 만족하는 것을 사용하는 것을 특징으로 하는 플라즈마 도핑방법.
  6. 제1항에 있어서, 도핑은 상기 시료대와 상기 기판을 냉각하면서 효과적인 것을 특징으로 하는 플라즈마 도핑방법.
  7. 진공챔버내에, 전자사이클론 공명조건을 만족하는 저장 및 마이크로파를 인가할 수 있는 기구를 처리하는 장치를 사용하고, 상기 진공챔버내에 설치된 시료대에 개구부를 가진 레지스트에 의해 도포된 기판을 놓고 특정원소를 함유하는 가스를 상기 진공챔버에 도입하여 플라즈마를 발생하고, 상기 시표대에 고주파수 또는 직류전원을 인가하여 상기 진공챔버와 상기 기판사이에 방전을 발생하고, 상기 기판과 상기 플라즈마사이에 발생된 포텐셜차이를 이용하여 상기 기판위에 남아있는 상기 레지스트를 구비하고 상기 플라즈마에 상기 특정원소를 함유하는 불순물을 상기 기판에 도핑하는 공정으로 이루어진 특징으로 하는 플라즈마 도핑방법.
  8. 제7항에 있어서, 플라즈마는 상기 진공챔버내에 5×10-3Torr이상의 진공도로 발생되는 것을 특징으로 하는 플라즈마 도핑방법.
  9. 제7항에 있어서, 상기 기판 및 상기 시료대는 냉각된 것을 특징으로 하는 플라즈마 도핑방법.
  10. 제1항에 있어서, 반도체기판을 도포하고자 하는 기판으로서 사용된 것을 특징으로 하는 플라즈마 도핑방법.
  11. 제10항에 있어서, 실리콘기판은 도포하고자 하는 기판으로서, 사용된 것을 특징으로 하는 플라즈마 도핑방법.
  12. 제1항에 있어서, 반도체기판을 도포하고자 하는 기판으로서 사용되고, 이러한 반도체기판상에 형성된 절연막과 상기 절연막상의 반도체박막으로 구성된 구조를 함유하는 기판이 사용되는 것을 특징으로 하는 플라즈마 도핑방법.
  13. 제12항에 있어서, 실리콘은 도포하고자 하는 반도체기판으로서 사용되고, 게이트절연막은 실리콘기판상에 형성되고, 실리콘기판은 상기 절연막상에 침전된 게이트전극막을 가지는 구조를 함유하고, 상기 구조에 인접하게 개구된 상기 실리콘기판의 여러부위가 사용되는 것을 특징으로 하는 플라즈마 도핑방법.
  14. 제12항 및 제13항에 있어서, 상기 기판 및 상기 시료대는 처리하는 동안 냉각된 것을 특징으로 하는 플라즈마 도핑방법.
  15. 진공챔버내에 설치된 시료대는 냉각하는 기구 및 전자사이클을 공명조건을 만족하도록 자장 및 마이크로파를 인가할 수 있는 기구를 처리하는 장치를 사용하고, 상기 시료대위에 기판을 놓고, 특정원소를 함유하는 가스를 상기 진공챔버에 도입하여 플라즈마를 발생하고, 상기 시료대에 고주파수 또는 직류전원을 인가하여 상기 진공챔버와 상기 기판사이에 방전을 발생하고, 상기 기판과 상기 플라즈마 사이에 발생된 포텐셜차이를 이용하여 상기 플라즈마내의 상기 특정원소를 함유하는 불순물을 상기 기판에 도핑하는 공정으로 이루어진 것을 특징으로 하는 플라즈마 도핑방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880006315A 1987-05-28 1988-05-28 플라즈마 도핑방법 KR920004515B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP13246487 1987-05-28
JP62-132464 1987-05-28
JP17320987 1987-07-10
JP62-173209 1987-07-10
JP19591187 1987-08-05
JP62-195911 1987-08-05
JP2608888 1988-02-05
JP63-26088 1988-02-05

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KR880014650A true KR880014650A (ko) 1988-12-24
KR920004515B1 KR920004515B1 (ko) 1992-06-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387260B1 (ko) * 1996-06-21 2003-08-14 주식회사 하이닉스반도체 반도체 소자의 전극 형성방법
US7888245B2 (en) 2006-05-11 2011-02-15 Hynix Semiconductor Inc. Plasma doping method and method for fabricating semiconductor device using the same

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2920546B2 (ja) * 1989-12-06 1999-07-19 セイコーインスツルメンツ株式会社 同極ゲートｍｉｓトランジスタの製造方法
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
JP3119693B2 (ja) * 1991-10-08 2000-12-25 エム・セテック株式会社 半導体基板の製造方法及びその装置
US5425392A (en) * 1993-05-26 1995-06-20 Micron Semiconductor, Inc. Method DRAM polycide rowline formation
US5716862A (en) * 1993-05-26 1998-02-10 Micron Technology, Inc. High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS
US5851906A (en) * 1995-08-10 1998-12-22 Matsushita Electric Industrial Co., Ltd. Impurity doping method
JP3862305B2 (ja) 1995-10-23 2006-12-27 松下電器産業株式会社 不純物の導入方法及びその装置、並びに半導体装置の製造方法
US5837592A (en) * 1995-12-07 1998-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stabilizing polysilicon resistors
US5846867A (en) * 1995-12-20 1998-12-08 Sony Corporation Method of producing Si-Ge base heterojunction bipolar device
KR100268920B1 (ko) * 1997-04-21 2000-12-01 김영환 반도체소자의제조방법
TW388087B (en) * 1997-11-20 2000-04-21 Winbond Electronics Corp Method of forming buried-channel P-type metal oxide semiconductor
US5976925A (en) * 1997-12-01 1999-11-02 Advanced Micro Devices Process of fabricating a semiconductor devise having asymmetrically-doped active region and gate electrode
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
EP1079424A1 (en) * 1999-08-18 2001-02-28 Motorola, Inc. A method for forming a deep trench in a semiconductor substrate
US6921708B1 (en) 2000-04-13 2005-07-26 Micron Technology, Inc. Integrated circuits having low resistivity contacts and the formation thereof using an in situ plasma doping and clean
GB2369575A (en) * 2000-04-20 2002-06-05 Salviac Ltd An embolic protection system
US6403453B1 (en) * 2000-07-27 2002-06-11 Sharp Laboratories Of America, Inc. Dose control technique for plasma doping in ultra-shallow junction formations
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
TWI262561B (en) * 2001-06-12 2006-09-21 Promos Technologies Inc Method of forming ultra-shallow junction devices and its application in a memory device
US6475906B1 (en) 2001-07-05 2002-11-05 Promos Technologies, Inc. Gate contact etch sequence and plasma doping method for sub-150 NM DT-based DRAM devices
TWI331000B (en) * 2002-07-11 2010-09-21 Panasonic Corp Plasma doping method
JP4013674B2 (ja) * 2002-07-11 2007-11-28 松下電器産業株式会社 プラズマドーピング方法及び装置
US20040149219A1 (en) * 2002-10-02 2004-08-05 Tomohiro Okumura Plasma doping method and plasma doping apparatus
KR100475122B1 (ko) * 2002-12-20 2005-03-10 삼성전자주식회사 실리콘 접촉저항을 개선할 수 있는 반도체 소자 형성방법
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
US7199064B2 (en) * 2003-09-08 2007-04-03 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
KR100656346B1 (ko) * 2004-12-08 2006-12-11 한국전자통신연구원 이동 전하를 이용한 비휘발성 메모리 소자의 제조 방법
EP1826814B8 (en) * 2004-12-13 2011-04-13 Panasonic Corporation Plasma doping method
JP5116463B2 (ja) * 2005-02-23 2013-01-09 パナソニック株式会社 プラズマドーピング方法及び装置
US20090181526A1 (en) * 2005-03-30 2009-07-16 Tomohiro Okumura Plasma Doping Method and Apparatus
EP1865537A1 (en) * 2005-03-30 2007-12-12 Matsushita Electric Industrial Co., Ltd. Impurity introduction apparatus and method of impurity introduction
CN100539029C (zh) * 2005-03-30 2009-09-09 松下电器产业株式会社 等离子掺杂方法和等离子处理装置
JP5102615B2 (ja) * 2005-04-04 2012-12-19 パナソニック株式会社 プラズマ処理方法及び装置
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
WO2006121131A1 (ja) * 2005-05-12 2006-11-16 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法およびプラズマドーピング装置
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
TWI423308B (zh) * 2005-09-01 2014-01-11 Panasonic Corp A plasma processing apparatus, a plasma processing method, and a dielectric window for use therefor and a method of manufacturing the same
KR100955144B1 (ko) * 2006-10-03 2010-04-28 파나소닉 주식회사 플라즈마 도핑 방법 및 장치
JPWO2008050596A1 (ja) 2006-10-25 2010-02-25 パナソニック株式会社 プラズマドーピング方法及びプラズマドーピング装置
US7790586B2 (en) * 2006-11-15 2010-09-07 Panasonic Corporation Plasma doping method
KR20090106617A (ko) * 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
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US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
US8063437B2 (en) * 2007-07-27 2011-11-22 Panasonic Corporation Semiconductor device and method for producing the same
JP4368932B2 (ja) * 2007-08-31 2009-11-18 パナソニック株式会社 プラズマドーピング処理装置及び方法
JP4405588B2 (ja) * 2007-12-28 2010-01-27 パナソニック株式会社 プラズマドーピング装置及び方法並びに半導体装置の製造方法
JP2009212346A (ja) * 2008-03-05 2009-09-17 Panasonic Corp プラズマドーピング方法及び装置
JP2010050188A (ja) * 2008-08-20 2010-03-04 Panasonic Corp プラズマドーピング装置
JP5457045B2 (ja) * 2009-02-12 2014-04-02 パナソニック株式会社 半導体装置及びその製造方法
KR101185987B1 (ko) * 2009-06-15 2012-09-25 에스케이하이닉스 주식회사 듀얼 폴리 게이트의 ｐ형 불순물 도핑방법 및 이를 이용한 듀얼 폴리 게이트 형성방법
JP2011129678A (ja) * 2009-12-17 2011-06-30 Panasonic Corp 半導体装置及びその製造方法
JP2013051221A (ja) 2009-12-28 2013-03-14 Panasonic Corp 半導体装置の製造方法及びプラズマドーピング装置
JP5263266B2 (ja) 2010-11-09 2013-08-14 パナソニック株式会社 プラズマドーピング方法及び装置
US8466005B2 (en) * 2011-07-22 2013-06-18 Intermolecular, Inc. Method for forming metal oxides and silicides in a memory device
US8889534B1 (en) 2013-05-29 2014-11-18 Tokyo Electron Limited Solid state source introduction of dopants and additives for a plasma doping process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226433B2 (ko) * 1971-09-18 1977-07-14
DE3118785A1 (de) * 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
DE3221180A1 (de) * 1981-06-05 1983-01-05 Mitsubishi Denki K.K., Tokyo Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
US4382099A (en) * 1981-10-26 1983-05-03 Motorola, Inc. Dopant predeposition from high pressure plasma source
US4737379A (en) * 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
JPS6146044A (ja) * 1984-08-11 1986-03-06 Fujitsu Ltd 半導体装置の製造方法
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4698104A (en) * 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387260B1 (ko) * 1996-06-21 2003-08-14 주식회사 하이닉스반도체 반도체 소자의 전극 형성방법
US7888245B2 (en) 2006-05-11 2011-02-15 Hynix Semiconductor Inc. Plasma doping method and method for fabricating semiconductor device using the same

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