CA2720276A1 - Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film - Google Patents

Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film Download PDF

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Publication number
CA2720276A1
CA2720276A1 CA2720276A CA2720276A CA2720276A1 CA 2720276 A1 CA2720276 A1 CA 2720276A1 CA 2720276 A CA2720276 A CA 2720276A CA 2720276 A CA2720276 A CA 2720276A CA 2720276 A1 CA2720276 A1 CA 2720276A1
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CA
Canada
Prior art keywords
integer
porous material
composition
formula
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2720276A
Other languages
English (en)
French (fr)
Inventor
Kazuo Kohmura
Hirofumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of CA2720276A1 publication Critical patent/CA2720276A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/45—Anti-settling agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
CA2720276A 2008-04-02 2009-03-30 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film Abandoned CA2720276A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-096449 2008-04-02
JP2008096449 2008-04-02
PCT/JP2009/056484 WO2009123104A1 (ja) 2008-04-02 2009-03-30 組成物及びその製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜

Publications (1)

Publication Number Publication Date
CA2720276A1 true CA2720276A1 (en) 2009-10-08

Family

ID=41135478

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2720276A Abandoned CA2720276A1 (en) 2008-04-02 2009-03-30 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film

Country Status (8)

Country Link
US (1) US8603588B2 (https=)
EP (1) EP2267080A1 (https=)
JP (2) JP4598876B2 (https=)
KR (1) KR101220029B1 (https=)
CN (1) CN101983223B (https=)
CA (1) CA2720276A1 (https=)
TW (1) TWI401296B (https=)
WO (1) WO2009123104A1 (https=)

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JP6006912B2 (ja) * 2010-03-30 2016-10-12 旭化成株式会社 塗膜、その製造方法、並びに積層体及び保護部材
JP2012104616A (ja) * 2010-11-09 2012-05-31 Hiroshima Univ 低誘電率膜の前駆体組成物及びこれを用いた低誘電率膜の製造方法
JP5894742B2 (ja) * 2011-03-29 2016-03-30 株式会社アドマテックス 表面コート用組成物及びその製造方法
SG11201404068QA (en) 2012-01-17 2014-10-30 Mitsui Chemicals Inc Semiconductor sealing composition, semiconductor device and method for producing same, and polymer and method for producing same
IN2015DN00369A (https=) 2012-07-17 2015-06-12 Mitsui Chemicals Inc
JP6000839B2 (ja) 2012-12-21 2016-10-05 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ケイ素酸化物ナノ粒子とシルセスキオキサンポリマーとの複合体およびその製造方法、ならびにその複合体を用いて製造した複合材料
JP6011364B2 (ja) * 2013-01-28 2016-10-19 旭硝子株式会社 撥水膜付き基体および輸送機器用物品
JP6058788B2 (ja) 2013-03-27 2017-01-11 三井化学株式会社 複合体の製造方法及び組成物
JP6246534B2 (ja) * 2013-09-11 2017-12-13 株式会社ディスコ ウエーハの加工方法
EP4216258A1 (en) 2014-12-19 2023-07-26 Applied Materials, Inc. Components for a chemical mechanical polishing tool
US20160311354A1 (en) * 2015-04-23 2016-10-27 Craig Allen Stamm Back support device and system
JP6754741B2 (ja) * 2017-09-07 2020-09-16 信越化学工業株式会社 半導体積層体、半導体積層体の製造方法及び半導体装置の製造方法
JP7230067B2 (ja) * 2018-06-15 2023-02-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法
CN117111185A (zh) * 2019-03-28 2023-11-24 株式会社 尼康 多孔质膜、光学元件、光学系统、交换透镜和光学装置
CN117304719A (zh) * 2023-09-27 2023-12-29 夸泰克(广州)新材料有限责任公司 一种低折射率二氧化硅薄膜制备方法

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Also Published As

Publication number Publication date
KR101220029B1 (ko) 2013-01-21
CN101983223B (zh) 2013-06-05
JPWO2009123104A1 (ja) 2011-07-28
JP4598876B2 (ja) 2010-12-15
TW201000558A (en) 2010-01-01
EP2267080A1 (en) 2010-12-29
JP2010090389A (ja) 2010-04-22
US8603588B2 (en) 2013-12-10
CN101983223A (zh) 2011-03-02
US20110018108A1 (en) 2011-01-27
JP4778087B2 (ja) 2011-09-21
KR20100137547A (ko) 2010-12-30
WO2009123104A1 (ja) 2009-10-08
TWI401296B (zh) 2013-07-11

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Effective date: 20131028