CA2720276A1 - Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film - Google Patents

Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film Download PDF

Info

Publication number
CA2720276A1
CA2720276A1 CA2720276A CA2720276A CA2720276A1 CA 2720276 A1 CA2720276 A1 CA 2720276A1 CA 2720276 A CA2720276 A CA 2720276A CA 2720276 A CA2720276 A CA 2720276A CA 2720276 A1 CA2720276 A1 CA 2720276A1
Authority
CA
Canada
Prior art keywords
integer
porous material
composition
formula
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2720276A
Other languages
English (en)
French (fr)
Inventor
Kazuo Kohmura
Hirofumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of CA2720276A1 publication Critical patent/CA2720276A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/45—Anti-settling agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Formation Of Insulating Films (AREA)
CA2720276A 2008-04-02 2009-03-30 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film Abandoned CA2720276A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008096449 2008-04-02
JP2008-096449 2008-04-02
PCT/JP2009/056484 WO2009123104A1 (ja) 2008-04-02 2009-03-30 組成物及びその製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜

Publications (1)

Publication Number Publication Date
CA2720276A1 true CA2720276A1 (en) 2009-10-08

Family

ID=41135478

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2720276A Abandoned CA2720276A1 (en) 2008-04-02 2009-03-30 Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film

Country Status (8)

Country Link
US (1) US8603588B2 (https=)
EP (1) EP2267080A1 (https=)
JP (2) JP4598876B2 (https=)
KR (1) KR101220029B1 (https=)
CN (1) CN101983223B (https=)
CA (1) CA2720276A1 (https=)
TW (1) TWI401296B (https=)
WO (1) WO2009123104A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6006912B2 (ja) * 2010-03-30 2016-10-12 旭化成株式会社 塗膜、その製造方法、並びに積層体及び保護部材
JP2012104616A (ja) * 2010-11-09 2012-05-31 Hiroshima Univ 低誘電率膜の前駆体組成物及びこれを用いた低誘電率膜の製造方法
JP5894742B2 (ja) * 2011-03-29 2016-03-30 株式会社アドマテックス 表面コート用組成物及びその製造方法
JP5931092B2 (ja) 2012-01-17 2016-06-08 三井化学株式会社 半導体用シール組成物、半導体装置及びその製造方法、並びに、ポリマー及びその製造方法
SG11201500194UA (en) 2012-07-17 2015-04-29 Mitsui Chemicals Inc Semiconductor device and method for manufacturing same, and rinsing fluid
JP6000839B2 (ja) 2012-12-21 2016-10-05 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ケイ素酸化物ナノ粒子とシルセスキオキサンポリマーとの複合体およびその製造方法、ならびにその複合体を用いて製造した複合材料
JP6011364B2 (ja) * 2013-01-28 2016-10-19 旭硝子株式会社 撥水膜付き基体および輸送機器用物品
EP2978011B1 (en) 2013-03-27 2018-05-02 Mitsui Chemicals, Inc. Method for manufacturing complex, and composition
JP6246534B2 (ja) * 2013-09-11 2017-12-13 株式会社ディスコ ウエーハの加工方法
EP3234986B1 (en) 2014-12-19 2023-03-08 Applied Materials, Inc. Components for a chemical mechanical polishing tool
US20160311354A1 (en) * 2015-04-23 2016-10-27 Craig Allen Stamm Back support device and system
JP6754741B2 (ja) * 2017-09-07 2020-09-16 信越化学工業株式会社 半導体積層体、半導体積層体の製造方法及び半導体装置の製造方法
US12312684B2 (en) * 2018-06-15 2025-05-27 Versum Materials Us, Llc Siloxane compositions and methods for using the compositions to deposit silicon containing films
WO2020196851A1 (ja) * 2019-03-28 2020-10-01 株式会社ニコン 多孔質膜、光学素子、光学系、交換レンズ、光学装置および多孔質膜の製造方法
CN117304719A (zh) * 2023-09-27 2023-12-29 夸泰克(广州)新材料有限责任公司 一种低折射率二氧化硅薄膜制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2891920A (en) * 1955-01-26 1959-06-23 Dow Corning Polymerization of organopolysiloxanes in aqueous emulsion
AU2379900A (en) 1998-12-23 2000-07-31 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
JP3978566B2 (ja) 1999-09-09 2007-09-19 信越化学工業株式会社 分岐状オルガノポリシロキサンエマルジョンの製造方法
US6417310B1 (en) 1999-09-09 2002-07-09 Shin-Etsu Chemical Co., Ltd. Method for preparing branched organopolysiloxane
JP4798823B2 (ja) * 2000-04-04 2011-10-19 旭化成株式会社 多孔質のケイ素酸化物塗膜
EP1148105B1 (en) 2000-04-17 2006-10-04 JSR Corporation Composition for film formation, method of film formation, and silica-based film
US7122880B2 (en) * 2002-05-30 2006-10-17 Air Products And Chemicals, Inc. Compositions for preparing low dielectric materials
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
JP2004210579A (ja) * 2002-12-27 2004-07-29 Mitsui Chemicals Inc 多孔質シリカフィルムの製造方法、該方法により得られた多孔質シリカフィルム、並びにそれからなる半導体装置
JP2004292641A (ja) 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2007506276A (ja) * 2003-09-19 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ．ブイ． 低誘電率を有する誘電体層を形成するための方法
US7462678B2 (en) 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
JP2005120355A (ja) 2003-09-25 2005-05-12 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
US20050119360A1 (en) * 2003-11-28 2005-06-02 Kabushiki Kaisha Kobe Seiko Sho Method for producing porous material
JP2005225689A (ja) * 2004-02-10 2005-08-25 Mitsui Chemicals Inc 多孔質シリカフィルム形成用塗布液、多孔質シリカフィルムおよびそれらの製造方法ならびに半導体材料および半導体装置
US20090206453A1 (en) * 2005-02-15 2009-08-20 Ulvac, Inc. Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films
JP4894153B2 (ja) * 2005-03-23 2012-03-14 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
JP4757524B2 (ja) * 2005-04-13 2011-08-24 東京応化工業株式会社 シリカ系被膜形成用組成物
JP4757525B2 (ja) * 2005-04-13 2011-08-24 東京応化工業株式会社 シリカ系被膜形成用組成物
KR100930854B1 (ko) 2005-04-13 2009-12-10 도오꾜오까고오교 가부시끼가이샤 실리카계 피막 형성용 조성물
KR20080033542A (ko) * 2005-08-12 2008-04-16 미쓰이 가가쿠 가부시키가이샤 다공질 실리카의 제조 방법 및 제조 장치
JP5160237B2 (ja) * 2005-12-22 2013-03-13 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液から得られる低誘電率非晶質シリカ系被膜
JP5030478B2 (ja) * 2006-06-02 2012-09-19 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
JP4716040B2 (ja) * 2006-06-16 2011-07-06 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
JP2008120911A (ja) 2006-11-10 2008-05-29 Tokyo Ohka Kogyo Co Ltd 被膜形成用組成物およびそれから形成される被膜
JP4716044B2 (ja) * 2007-07-04 2011-07-06 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
JP4308291B2 (ja) 2007-11-19 2009-08-05 株式会社ザナヴィ・インフォマティクス 情報端末装置
JP4793592B2 (ja) * 2007-11-22 2011-10-12 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法

Also Published As

Publication number Publication date
US20110018108A1 (en) 2011-01-27
TWI401296B (zh) 2013-07-11
JP4598876B2 (ja) 2010-12-15
CN101983223A (zh) 2011-03-02
KR20100137547A (ko) 2010-12-30
KR101220029B1 (ko) 2013-01-21
TW201000558A (en) 2010-01-01
US8603588B2 (en) 2013-12-10
JP4778087B2 (ja) 2011-09-21
EP2267080A1 (en) 2010-12-29
JPWO2009123104A1 (ja) 2011-07-28
WO2009123104A1 (ja) 2009-10-08
JP2010090389A (ja) 2010-04-22
CN101983223B (zh) 2013-06-05

Similar Documents

Publication Publication Date Title
US8603588B2 (en) Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film
CN101490145B (zh) 多孔膜的前体组合物及其制备方法、多孔膜及其制作方法、以及半导体装置
JP5096233B2 (ja) 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
CN102046699B (zh) 制备多孔材料的方法和通过该方法制备的多孔材料
JP2006500769A (ja) 低ｋ材料用の中間層接着促進剤
CN1331745C (zh) 多孔质薄膜的改质方法及被改质的多孔质薄膜及其用途
JP2004134738A (ja) 低誘電率材料及びその製造方法
JP2009286935A (ja) 有機酸化ケイ素微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
JP4894153B2 (ja) 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
JPWO2007020878A1 (ja) 多孔質シリカの製造方法および製造装置
JP2003115482A (ja) 絶縁膜形成用組成物
JP2004292304A (ja) 多孔質フィルムの改質方法、改質された多孔質フィルム及びその用途
JP5004866B2 (ja) 層間絶縁用薄膜
JP2004018608A (ja) 絶縁性薄膜
JP2003165952A (ja) 絶縁薄膜製造用の塗布組成物
JP2004067434A (ja) 層間絶縁膜製造用の塗布組成物の製造法
JP2003234343A (ja) 層間絶縁膜用組成物

Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued

Effective date: 20131028