JP6754741B2 - 半導体積層体、半導体積層体の製造方法及び半導体装置の製造方法 - Google Patents
半導体積層体、半導体積層体の製造方法及び半導体装置の製造方法 Download PDFInfo
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- JP6754741B2 JP6754741B2 JP2017172287A JP2017172287A JP6754741B2 JP 6754741 B2 JP6754741 B2 JP 6754741B2 JP 2017172287 A JP2017172287 A JP 2017172287A JP 2017172287 A JP2017172287 A JP 2017172287A JP 6754741 B2 JP6754741 B2 JP 6754741B2
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- ZHQNDEHZACHHTA-UHFFFAOYSA-N CC1(C)c(cccc2)c2-c2ccccc12 Chemical compound CC1(C)c(cccc2)c2-c2ccccc12 ZHQNDEHZACHHTA-UHFFFAOYSA-N 0.000 description 2
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- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
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- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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Description
(A)エポキシ樹脂、
(B)下記式(1)及び/又は式(2)に記載のエポキシ化合物、
(C)下記式(3)で示されるエポキシ化合物、
(D)フェノール性硬化剤、及び
(E)硬化促進剤
を含むものであることを特徴とする樹脂組成物を提供する。
本発明の樹脂組成物は、(A)エポキシ樹脂、(B)特定のアリル基含有エポキシ化合物、(C)特定のアリル基を有さないエポキシ化合物及び(D)フェノール性硬化剤、(E)硬化促進剤を含むものである。
本発明の樹脂組成物において、(A)成分は、エポキシ樹脂である。前記エポキシ樹脂としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールAD型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ナフタレン型エポキシ樹脂、脂環式エポキシ樹脂、グリシジルエステル型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環式エポキシ樹脂、ジアリールスルホン型エポキシ樹脂、シリコーン変性エポキシ樹脂等が挙げられるが、これらに限定されない。
(D)成分のフェノール性硬化剤は、公知のものを広く使用可能である。硬化剤の構造としては、以下に示すものが例示できるが、これらに限定されない。
(E)成分の硬化促進剤は、エポキシ基の開環に用いられるものであれば、広く使用可能である。前記硬化促進剤としては、イミダゾール、2−メチルイミダゾール、2−エチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、1,2−ジメチルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−シアノエチル−2−メチルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノエチル−2−エチル−4−メチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール等のイミダゾール類、2−(ジメチルアミノメチル)フェノール、トリエチレンジアミン、トリエタノールアミン、1,8−ジアザビシクロ[5.4.0]ウンデセン−7、トリス(ジメチルアミノメチル)フェノール等の第3級アミン類、ジフェニルホスフィン、トリフェニルホスフィン、トリブチルホスフィン等の有機ホスフィン類、オクチル酸スズ等の金属化合物、テトラフェニルホスホニウム・テトラフェニルボレート、テトラフェニルホスホニウム・エチルトリフェニルボレート等のテトラ置換ホスホニウム・テトラ置換ボレート等が挙げられる。
本発明の樹脂組成物は、ウエハ保護性を与え、更に、耐熱性、耐湿性、強度等を向上させ、硬化物の信頼性を上げるために、(F)成分として無機充填剤を含んでもよい。無機充填剤としては、例えば、タルク、焼成クレー、未焼成クレー、マイカ、ガラス等のケイ酸塩、酸化チタン、アルミナ、溶融シリカ(溶融球状シリカ、溶融破砕シリカ)、結晶シリカ粉末等の酸化物、炭酸カルシウム、炭酸マグネシウム、ハイドロタルサイト等の炭酸塩、水酸化アルミニウム、水酸化マグネシウム、水酸化カルシウム等の水酸化物、硫酸バリウム、硫酸カルシウム、亜硫酸カルシウム等の硫酸塩又は亜硫酸塩、ホウ酸亜鉛、メタホウ酸バリウム、ホウ酸アルミニウム、ホウ酸カルシウム、ホウ酸ナトリウム等のホウ酸塩、窒化アルミニウム、窒化ホウ素、窒化ケイ素等の窒化物等が挙げられる。これらの無機充填剤は、1種単独でも、2種以上を組み合わせて用いてもよい。これらの中でも、溶融シリカ、結晶シリカ等のシリカ粉末が好ましい。前記シリカ粉末としては、例えば、ヒュームドシリカ、沈降性シリカ等の補強性シリカ;石英等の結晶性シリカが挙げられる。具体的には、日本アエロジル(株)製のAerosil(登録商標)R972、R974、R976;(株)アドマテックス製のSE−2050、SC−2050、SE−1050、SO−E1、SO−C1、SO−E2、SO−C2、SO−E3、SO−C3、SO−E5、SO−C5;信越化学工業(株)製のMusil 120A、Musil 130A等が挙げられる。
本発明の樹脂組成物は、(G)成分として有機溶剤を含んでもよい。有機溶剤としては、例えば、N,N−ジメチルアセトアミド、メチルエチルケトン、N,N−ジメチルホルムアミド、シクロヘキサノン、シクロペンタノン、N−メチル−2−ピロリドン、メタノール、エタノール、イソプロパノール、アセトン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、トルエン、キシレン等が挙げられ、特にメチルエチルケトン、シクロペンタノン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテートが好ましいが、これらに限定されない。これらの有機溶剤は、1種単独でも、2種以上を混合して用いてもよい。有機溶剤の使用量は、樹脂組成物中の固形分濃度が60〜90質量%になる量が好ましい。
本発明の樹脂組成物は、難燃性の向上を目的として、難燃剤を含んでもよい。難燃剤としては、リン系難燃剤が挙げられ、ハロゲン原子を含有せずに難燃性を付与するものであるが、その例としてはホスファゼン化合物、リン酸エステル化合物、リン酸エステルアミド化合物等が挙げられる。ホスファゼン化合物やリン酸エステルアミド化合物は、分子内にリン原子と窒素原子を含有しているため、特に高い難燃性が得られる。難燃剤の含有量は、(A)成分100質量部に対し、5〜30質量部が好ましい。
本発明の樹脂フィルムは、上記本発明の樹脂組成物がフィルム化されたものである。すなわち、本発明の樹脂フィルムは、前記樹脂組成物を用いて、フィルム状に加工して得られるものである。フィルム状に形成されることで、大口径、薄膜ウエハに対して良好なモールド性能を有するものとなり、ウエハを一括してモールドする際に、樹脂を流し込む必要がないため、ウエハ表面への充填不良等の問題を生じさせることがない。また、前記樹脂組成物を用いて形成された樹脂フィルムであれば、強度や接着力が高いため、各種エラーの起きづらいウエハモールド材となる。
本発明の半導体積層体は、半導体ウエハ上に上記本発明の樹脂フィルムの硬化物を有するものである。本発明の半導体積層体の製造方法は、前記樹脂フィルムを半導体ウエハに貼り付け、該半導体ウエハをモールドする工程と、前記樹脂フィルムを加熱硬化する工程を有する方法である。
本発明の半導体装置は、上記本発明の半導体積層体が個片化されたものである。本発明の半導体装置の製造方法は、上記本発明の半導体積層体の製造方法によって製造した半導体積層体を個片化する工程を有する方法である。このように、樹脂フィルムでモールドされた半導体ウエハを個片化することで、加熱硬化皮膜を有する半導体装置が得られる。モールドされたウエハは、ダイシングテープ等の半導体加工用保護テープにモールド樹脂面あるいはウエハ面が接するように貼られ、ダイサーの吸着テーブル上に設置され、このモールドされたウエハは、ダイシングブレードを備えるダイシングソー(例えば、(株)DISCO製DFD6361)を使用して切断される。ダイシング時のスピンドル回転数及び切断速度は、適宜選択すればよいが、通常、スピンドル回転数25,000〜45,000rpm、切断速度10〜50mm/secである。また、個片化されるサイズは半導体パッケージの設計によるが、概ね2mm×2mm〜30mm×30mm程度である。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した5Lフラスコ内に、化合物S−1 617g(2.0モル)、メタノール256g(8.0モル)、エピクロロヒドリン 852g(8.0モル)を加え、水酸化ナトリウム768g(19.2モル)を2時間かけて添加し、その後、60℃まで温度を上げて3時間反応させた。反応後、トルエン500mL加え、水層が中性になるまで純水で洗浄した後、有機層中の溶媒を減圧下で除去し、エポキシ化合物(1) 757g(1.8モル)を得た。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した5Lフラスコ内に、化合物S−1 617g(2.0モル)、メタノール256g(8.0モル)、塩化アリル724g(8.0モル)を加え、水酸化ナトリウム768g(19.2モル)を粒状のまま2時間かけて添加し、添加終了後、60℃まで加温し3時間熟成した。その後、反応溶液中にトルエン500mLを加え、水層が中性になるまで純水で洗浄作業を行った後、有機層中の有機溶媒を減圧下で除去し、粗生成物740gを得た。これを再度、撹拌機、温度計、窒素置換装置及び還流冷却器を具備した5Lフラスコに移し、180℃で4時間撹拌することでクライゼン転移を起こした。その後、系中を45℃まで温度を下げ、再度メタノ−ル245g(7.6モル)、エピクロロヒドリン810g(7.6モル)を加え、水酸化ナトリウム365g(9.1モル)を1時間かけて添加し、その後、60℃まで温度を上げて3時間反応させた。反応後、トルエン500mLを加え、水層が中性になるまで純水で洗浄した後、有機層中の有機溶媒を減圧下で留去し、エポキシ化合物(2) 851g(1.7モル)を得た。
合成例において、重量平均分子量(Mw)は、GPCカラム TSKgel Super HZM−H(東ソー(株)製)を用い、流量0.6mL/分、溶出溶媒テトラヒドロフラン、カラム温度40℃の分析条件で、単分散ポリスチレンを標準とするゲルパーミエーションクロマトグラフィー(GPC)により測定した値である。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した3Lフラスコ内に、化合物S−2 195.9g(0.333モル)を加えた後、トルエン1,400gを加え、70℃に加温した。その後、塩化白金酸トルエン溶液(白金濃度0.5質量%)1.0gを投入し、化合物S−3 414.9g(0.267モル)、及び化合物S−4 13.0g(0.067モル)を各々1時間かけて滴下した(ヒドロシリル基の合計モル数/アルケニル基の合計モル数=0.5/0.5=1/1)。滴下終了後、100℃まで加温し、6時間熟成した後、反応溶液からトルエンを減圧留去し、下記式で表される樹脂1 570gを得た。樹脂1のMwは、37,400であった。なお、樹脂1中に含まれるシロキサン量は、67質量%であった。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した3Lフラスコ内に、化合物S−2 133.5g(0.227モル)を加えた後、トルエン1,500gを加え、70℃に加温した。その後、塩化白金酸トルエン溶液(白金濃度0.5質量%)1.0gを投入し、化合物S−5 525.6g(0.182モル)、及び化合物S−4 8.8g(0.045モル)を各々1時間かけて滴下した(ヒドロシリル基の合計モル数/アルケニル基の合計モル数=0.500/0.500=1)。滴下終了後、100℃まで加温し、6時間熟成した後、反応溶液からトルエンを減圧留去し、下記式で表される樹脂2 605gを得た。樹脂2のMwは、51,100であった。なお、樹脂2中に含まれるシロキサン量は、79質量%であった。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した3Lフラスコ内に、化合物S−2 104.9g(0.179モル)、及び化合物S−6 61.5g(0.143モル)、及び化合物S−7 6.6g(0.036モル)を加えた後、トルエン1,600gを加え、70℃に加温した。その後、塩化白金酸トルエン溶液(白金濃度0.5質量%)1.0gを投入し、化合物S−5 516.3g(0.179モル)、及び化合物S−4 34.7g(0.179モル)を各々1時間かけて滴下した(ヒドロシリル基の合計モル数/アルケニル基の合計モル数=0.500/0.500=1.00)。滴下終了後、100℃まで加温し6時間熟成した後、反応溶液からトルエンを減圧留去し、樹脂3 680gを得た。樹脂3のMwは、46,800であった。なお、樹脂3中に含まれるシロキサン量は、72質量%であった。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した3Lフラスコ内に、化合物S−8 140.2g(0.333モル)を加えた後、トルエン1,500gを加え、70℃に加温した。その後、塩化白金酸トルエン溶液(白金濃度0.5質量%)1.0gを投入し、S−3 518.7g(0.333モル)を1時間かけて滴下した(ヒドロシリル基の合計モル数/アルケニル基の合計モル数=0.500/0.500=1.00)。滴下終了後、100℃まで加温し6時間熟成した後、反応溶液からトルエンを減圧留去し、樹脂4 610gを得た。樹脂4のMwは、49,500であった。なお、樹脂4中に含まれるシロキサン量は、79質量%であった。
撹拌機、温度計、窒素置換装置及び還流冷却器を具備した3Lフラスコ内に、化合物S−8 420.5g(1.000モル)を加えた後、トルエン1,400gを加え、70℃に加温した。その後、塩化白金酸トルエン溶液(白金濃度0.5質量%)1.0gを投入し、S−4 194.4g(1.000モル)を各々1時間かけて滴下した(ヒドロシリル基の合計モル数/アルケニル基の合計モル数=1.000/1.000=1.00)。滴下終了後、100℃まで加温し6時間熟成した後、反応溶液からトルエンを減圧留去し、樹脂5 570gを得た。樹脂5のMwは、53,200であった。なお、樹脂5中にシロキサンは含まれない。
[実施例1〜20及び比較例1〜16]
下記表1〜4に記載した組成で、(A)合成例5で合成したエポキシ樹脂(樹脂5)、又は合成例1〜4で合成したシリコーン変性エポキシ樹脂(樹脂1〜4)、(B)エポキシ化合物(1)〜(2)、(C)エポキシ化合物(3)、(D)フェノール性硬化剤、(E)硬化促進剤、及び(F)無機充填剤を配合した。更に、固形成分濃度が65質量%となる量のシクロペンタノンを添加し、スターラー、又は、ホモミキサーを使用して撹拌し、混合及び分散して、樹脂組成物の分散液を調製した。(A)成分中に含まれるエポキシ基と(B)(C)成分中に含まれるエポキシ基の当量に対して、フェノール当量が同じになるように(D)フェノール性硬化剤を加えた。
・キュアゾール2P4MHZ(四国化成工業(株)製、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール)
・シリカ((株)アドマテックス製、平均粒径5.0μm)
得られた樹脂フィルムについて、以下の方法で評価を行った。結果を表1〜4に示す。
引張強度測定装置(島津製作所製オートグラフAGS−5kNG)を用いて、作製した硬化済みフィルムの引張り弾性率、強度、及び伸び率を測定した。樹脂フィルムの硬化条件は180℃×4時間とした。
作製したフィルムを20mm角シリコンウエハに貼り付け、その上から2mm角に切ったシリコンチップを押し当てて、それらを加熱硬化(180℃×4時間)し、その後、接着力測定装置(ノードソン・アドバンスト・テクノロジー社製万能型ボンドテスター シリーズ4000(DS−100))を用いて、チップの横からはじいた際の接着力を測定した(ダイシェアテスト)。
作製したフィルムをフィルムラミネータ―(TAKATORI TEAM−100)にて、シリコンウエハ上にラミネートし、加熱硬化(180℃×4時間)し、それらを東朋テクノロジー社製薄膜応力測定装置(FLX−2320−S)で反り応力を測定した。
Claims (16)
- 前記(A)成分がシリコーン変性エポキシ樹脂であることを特徴とする請求項1に記載の半導体積層体。
- 前記シリコーン変性エポキシ樹脂が、下記式(4)で表され、重量平均分子量が3,000〜500,000であることを特徴とする請求項2に記載の半導体積層体。
- 前記(B)成分が、前記(A)成分100質量部に対し、0.5〜100質量部含まれることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体積層体。
- 更に、(F)無機充填剤を含むものであることを特徴とする請求項1から請求項4のいずれか1項に記載の半導体積層体。
- 前記無機充填剤が、シリカであり、前記樹脂組成物中20〜96質量%含まれることを特徴とする請求項5に記載の半導体積層体。
- 前記樹脂フィルムの硬化後における引張強度が6.0MPa以上であることを特徴とする請求項1から請求項6のいずれか1項に記載の半導体積層体。
- 請求項1から請求項7のいずれか1項に記載の半導体積層体が個片化されたものであることを特徴とする半導体装置。
- 前記(A)成分としてシリコーン変性エポキシ樹脂を用いることを特徴とする請求項9に記載の半導体積層体の製造方法。
- 前記シリコーン変性エポキシ樹脂として、下記式(4)で表され、重量平均分子量が3,000〜500,000であるものを用いることを特徴とする請求項10に記載の半導体積層体の製造方法。
- 前記(B)成分を、前記(A)成分100質量部に対し、0.5〜100質量部含むようにすることを特徴とする請求項9から請求項11のいずれか1項に記載の半導体積層体の製造方法。
- 更に、(F)無機充填剤を含むようにすることを特徴とする請求項9から請求項12のいずれか1項に記載の半導体積層体の製造方法。
- 前記無機充填剤が、シリカであり、前記樹脂組成物中に20〜96質量%含むようにすることを特徴とする請求項13に記載の半導体積層体の製造方法。
- 前記樹脂フィルムの硬化後における引張強度が6.0MPa以上となるようにすることを特徴とする請求項9から請求項14のいずれか1項に記載の半導体積層体の製造方法。
- 請求項9から請求項15のいずれか1項に記載の半導体積層体の製造方法によって製造した半導体積層体を個片化する工程を有することを特徴とする半導体装置の製造方法。
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