TW201734139A - 難燃性樹脂組成物、難燃性樹脂薄膜及半導體裝置與其製造方法 - Google Patents
難燃性樹脂組成物、難燃性樹脂薄膜及半導體裝置與其製造方法 Download PDFInfo
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- TW201734139A TW201734139A TW105135746A TW105135746A TW201734139A TW 201734139 A TW201734139 A TW 201734139A TW 105135746 A TW105135746 A TW 105135746A TW 105135746 A TW105135746 A TW 105135746A TW 201734139 A TW201734139 A TW 201734139A
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- 238000013461 design Methods 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
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- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 238000005984 hydrogenation reaction Methods 0.000 description 1
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- 150000002632 lipids Chemical class 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
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- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
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- IGALFTFNPPBUDN-UHFFFAOYSA-N phenyl-[2,3,4,5-tetrakis(oxiran-2-ylmethyl)phenyl]methanediamine Chemical compound C=1C(CC2OC2)=C(CC2OC2)C(CC2OC2)=C(CC2OC2)C=1C(N)(N)C1=CC=CC=C1 IGALFTFNPPBUDN-UHFFFAOYSA-N 0.000 description 1
- 150000004714 phosphonium salts Chemical group 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- QBERHIJABFXGRZ-UHFFFAOYSA-M rhodium;triphenylphosphane;chloride Chemical compound [Cl-].[Rh].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QBERHIJABFXGRZ-UHFFFAOYSA-M 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- VLCLHFYFMCKBRP-UHFFFAOYSA-N tricalcium;diborate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]B([O-])[O-].[O-]B([O-])[O-] VLCLHFYFMCKBRP-UHFFFAOYSA-N 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011995 wilkinson's catalyst Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
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Abstract
[解決手段]本發明係含有下述(A)、(B)及(C)成分的難燃性樹脂組成物。(A)具有組成式(1)之構成單位的重量平均分子量為3,000~500,000的聚矽氧樹脂、□[R1~R4表示1價烴基,R3和R4不同時為甲基,m和n係0~300之整數,R5~R8係2價烴基。a、b均為正數,a+b=1。X係以式(2)所示的2價之有機基。□(V係由-CH2-、□、□、□任一選擇的2價之有機基,p為0或1。R9及R10係烷基或烷氧基,可互為相同或相異。h為0、1及2任一者。)](B)三氮雜苯改質苯酚酚醛清漆化合物、(C)填料。[效果]本發明之難燃性樹脂組成物係因為可加工至薄膜狀,所以對於大口徑、薄膜晶圓而言,會成為具有良好的模塑性能者。
Description
本發明係關於難燃性樹脂組成物、難燃性樹脂薄膜及半導體裝置與其製造方法。
被使用於近年之半導體裝置之製造的晶圓之尺寸係進展至大口徑化、薄膜化,且正要求將此等以晶圓等級密封的技術。因此,除了先前之固形形式之環氧樹脂之轉移成形方法以外,尚提案有使用液狀形式之環氧樹脂的壓縮成形方法(專利文獻1)。
然而,在轉移成形係擔心因為使樹脂流動於狹部而產生線變形,亦有容易產生隨著密封面積增大的填充不良的問題。又,以壓縮成形法係難以在晶圓之端面部分之成形範圍進行微細控制,而且有在向成形機注入液狀密封樹脂時之流動性與物性並不容易最適化之問題。
尚,因近年之晶圓尺寸之大口徑化、晶圓之薄膜化,之前迄今已不是問題的模塑後之晶圓之翹曲成為問題,亦更要求良好的晶圓保護性能。因此,期望開發一種晶圓模
塑材料,其係不產生向晶圓表面之填充不良等之問題而可將晶圓總括而進行模塑,在模塑後具有低翹曲性及良好的晶圓保護性能。
更進一步,被使用於電子零件或電氣零件的密封材料組成物,原本係非常易燃,為了使其具有難燃性,之前使用鹵素化合物或銻化合物等之難燃性或難燃助劑。然而,由降低環境負荷的觀點,近年來,變得限制如此的化合物之使用,因此逐漸變為使用磷系難燃劑。然而,磷系難燃劑係有對於水質帶來不良影響的可能性,所以正期望不使用此等磷系難燃劑的模塑材料。
[專利文獻1]國際公開第2009/142065號
本發明係為了解決上述課題而為者,其目的為提供一種難燃性樹脂組成物及難燃性樹脂薄膜,其係實質上不含有難燃劑,可將晶圓總括而模塑(晶圓塑封),特別是對於大口徑、薄膜晶圓具有良好的模塑性,同時,在模塑後給予低翹曲性及良好的晶圓保護性能,更進一步,可良好地進行模塑步驟,可合適地使用於晶圓等級封裝,又,提供一種由該難燃性樹脂薄膜而模塑的半導體裝置、以及該半導體裝置之製造方法。
本發明係為了解決上述課題而為者,提供其特徵為含有下述(A)、(B)及(C)成分的難燃性樹脂組成物。
(A)具有以下述組成式(1)所表示的構成單位的重量平均分子量為3,000~500,000的聚矽氧樹脂、
[式中,R1~R4表示各自獨立的碳數1~8之1價烴基。但是,R3與R4不同時為甲基,m和n表示各自獨立地0~300之整數,R5~R8表示可相同或相異的碳數1~10之2價烴基。又,a、b均為正數,a+b=1。X係以下述通式(2)所示的2價之有機基。
(式中,V係由
任一選擇的2價之有機基,p為0或1。R9及R10各
自為碳數1~4之烷基或烷氧基,可互為相同或相異。h為0、1及2任一者。)]
(B)具有三氮雜苯骨架的改質苯酚酚醛清漆化合物、(C)填料。
在此情況,作為(B)成分係含胺基之三氮雜苯骨架苯酚酚醛清漆樹脂為理想,更具體而言係可使用以下述通式(7)所示的具有三氮雜苯骨架的苯酚酚醛清漆化合物。
(式中,R11係氫原子或甲基,s係1~10之整數,t係1~5之整數。)
如此的難燃性樹脂組成物,則因為可形成至薄膜狀,所以可將晶圓總括而模塑(晶圓塑封),而且對於大口徑、薄膜晶圓成為有良好的模塑性能、密著性、低翹曲性、晶圓保護性、信賴性及難燃性優異者,可合適地使用於晶圓等級封裝的難燃性樹脂組成物。
又,前述(B)成分之量係相對於前述(A)成分100質量份而言,為5~50質量份,前述(C)成分對於全質量之質量分率為60~95質量%,更理想為70~90質量%。
如此的難燃性樹脂組成物,則因為容易形成至薄膜狀,所以可容易地將晶圓總括而模塑(晶圓塑封),而且對於大口徑、薄膜晶圓成為有更良好的模塑性能、密著性、低翹曲性、晶圓保護性、信賴性及難燃性優異者,可合適地使用於晶圓等級封裝的難燃性樹脂組成物。
更進一步,為了將向晶圓之密著性、晶圓保護性變得更良好,所以含有環氧樹脂硬化促進劑為理想,可更合適地使用於晶圓等級封裝。又,以調配環氧樹脂,可使密著性、保護性更提高。
作為前述填料係二氧化矽為理想。如填料為二氧化矽,則可使晶圓保護性更提高,因為可使耐熱性、耐濕性、強度更提高,可提高信賴性、難燃性,所以為方便。
本發明係更進一步提供使用前述難燃性樹脂組成物而形成的難燃性樹脂薄膜。
形成為薄膜狀的難燃性樹脂薄膜,則成為對於大口徑、薄膜晶圓而具有良好的模塑性能者,在將晶圓總括而模塑時,因為並無注入樹脂的必要,所以不產生向晶圓表面之填充不良等之問題。又,使用前述難燃性樹脂組成物而形成的樹脂薄膜,則成為同時兼具對於晶圓的密著性、晶圓保護性的晶圓模塑材料。
在此情況,例如,透過具有一種步驟,其係準備2個以上樹脂形成薄膜,該樹脂形成薄膜係於設為剝
離薄膜或保護薄膜的薄膜上鍍覆難燃性樹脂組成物,由該樹脂形成薄膜將剝離薄膜或保護薄膜各自剝離,將已曝露的樹脂形成薄膜互相重疊的步驟,而可製造難燃性樹脂薄膜。
更進一步,本發明係提供一種半導體裝置之製造方法,該方法係具有將前述難燃性樹脂薄膜貼附於半導體晶圓,模塑該半導體晶圓的步驟、與加熱硬化前述難燃性樹脂薄膜的步驟、與單片化該已模塑的半導體晶圓的步驟。
如此,以前述難燃性樹脂薄膜已模塑的半導體晶圓係翹曲少且成為被充分保護者,所以可將此單片化而良率佳地製造高品質的半導體裝置。
又,更進一步,本發明係提供一種半導體裝置,其特徵為將以已加熱硬化的前述難燃性樹脂薄膜而成的加熱硬化皮膜所模塑的半導體晶圓單片化而成,且具有前述加熱硬化皮膜者。
如此,以已加熱硬化難燃性樹脂薄膜而成的加熱硬化皮膜所模塑的半導體晶圓係翹曲少且成為被充分保護的晶圓,將此單片化而得的半導體裝置係可設為無翹曲的高品質的半導體裝置。
本發明之難燃性樹脂組成物係因為可加工至薄膜狀,所以對於大口徑、薄膜晶圓成為具有良好的模塑
性能者。又,因為於密著性、低翹曲性、晶圓保護性優異,成為可將晶圓總括而進行模塑,所以成為可合適地使用於晶圓等級封裝的難燃性樹脂薄膜。
又,本發明之半導體裝置及該製造方法,可提供良率佳且高品質的半導體裝置。
如前所述,在最近,期望開發一種難燃性晶圓模塑材料,其係不產生向晶圓表面之填充不良等之問題而可將晶圓總括而進行模塑,在模塑後具有密著性、低翹曲性及良好的晶圓保護性能。
因此,本發明者等係為了達成上述課題而重覆專心致力研討的結果,發現以組合下述(A)聚矽氧樹脂和(B)具有特定構造的苯酚化合物而提供向晶圓之密著性、硬化後之低翹曲性及難燃性優異的樹脂組成物,更進一步因為下述(C)填料使晶圓保護性及硬化後之樹脂組成物之信賴性及難燃性提高,所以藉由此等之成分所構成的難燃性樹脂組成物而得到的難燃性樹脂薄膜係成為同時兼具對於晶圓的密著性、晶圓保護性的晶圓模塑材料,使本發明完成。
以下,詳細地說明關於本發明之難燃性樹脂組成物及由該組成物可得的樹脂薄膜(複合薄膜)、半導體裝置及該製造方法,但本發明係不被限定於此等。
本發明之難燃性樹脂組成物係含有(A)聚矽氧樹脂、(B)具有三氮雜苯骨架的改質苯酚酚醛清漆化合
物、(C)填料。
在本發明,(A)成分之聚矽氧樹脂係作為提供薄膜形成能力者而發揮機能。
又,在將已得的樹脂薄膜作為晶圓模塑材料使用的情況,提供向晶圓之密著性、低翹曲性、良好的模塑性。
此(A)成分之聚矽氧樹脂係具有以下述組成式(1)所表示的構成單位的重量平均分子量為3,000~500,000的聚矽氧樹脂。
[式中,R1~R4表示各自獨立的碳數1~8之1價烴基。但是,R3與R4不同時為甲基,m和n表示各自獨立地0~300之整數,R5~R8表示可相同或相異的碳數1~10之2價烴基。又,a、b均為正數,a+b=1。X係以下述通式(2)所示的2價之有機基。
(式中,V係由
任一選擇的2價之有機基,p為0或1。R9及R10各自為碳數1~4之烷基或烷氧基,可互為相同或相異。h為0、1及2任一者。)]
本發明之聚矽氧樹脂係含有以上述式(1)所示的重複單位,將四氫呋喃作為溶出溶媒而以GPC測定的聚苯乙烯換算之重量平均分子量為3,000~500,000,理想為5,000~200,000的聚合物。a、b均為正數,a+b=1。各單位係隨機鍵結,亦可作為嵌段聚合物鍵結。
在上述式(1)中,m和n係各自獨立的0~300之整數,理想係m為0~200,特別是0~100,n係1~200,特別是5~100。又,X係以上述式(2)所示的2價之有機基。R1~R4係各自獨立的碳數1~8、理想為1~6之1價烴基,可舉出烷基、環烷基、芳基等,例如可舉出甲基、乙基、丙基、己基、環己基及苯基等。其中,甲基及苯基係因原料之取得容易度所以為理想。但是,R3和R4不同時為甲基。
在上述式(2)中,R9和R10係各自獨立的碳數1~4、理想為1~2之烷基或烷氧基,可舉出甲基、乙基、丙基、第三丁基、甲氧基及乙氧基等。h係0、1或2,理想為0。
在上述式(2)中,V係由下述所示的基之任一中選擇的2價之基。p係0或1。
a、b係正數,a+b=1,但理想為0.05≦a≦0.80、特別是0.10≦a≦0.70、理想為0.20≦b≦0.95、特別是0.30≦b≦0.90。
本發明之聚矽氧樹脂係可使用由下述通式(3)、下述通式(4)、下述通式(5)及下述通式(6)所示的化合物中選擇的化合物而在金屬觸媒存在下,藉由加成聚合而製造。
(式中,R1~R4表示各自獨立的碳數1~8之1價烴基。但是,R3與R4不同時為甲基,m和n係各自獨立的0~300之整數。)
(式中,V係由
任一選擇的2價之有機基,p為0或1。R9及R10各自為碳數1~4之烷基或烷氧基,可互為相同或相異。h為0、1及2任一者。又,R11表示氫原子或甲基,g係0~7之整數。)
(式中,R3和R4表示各自獨立的碳數1~8之1價烴基。但是,R3與R4不同時為甲基,q和r係各自獨立的0~300之整數。又,R12表示氫原子或甲基,k係0~7之整數。)
金屬觸媒係例如可使用鉑(含鉑黑)、銠、鈀等之鉑族金屬單體;H2PtCl4.xH2O、H2PtCl6.xH2O、NaHPtCl6.xH2O、KHPtCl6.xH2O、Na2PtCl6.xH2O、K2PtCl4.xH2O、PtCl4.xH2O、PtCl2、Na2HPtCl4.xH2O(式中x係0~6之整數為理想,特別是0或6為理想)等之氯
化鉑、氯鉑酸及氯鉑酸鹽;醇改質氯鉑酸(例如,美國專利第3,220,972號說明書所記載者);氯鉑酸與烯烴之錯合物(例如,美國專利第3,159,601號說明書、美國專利第3,159,662號說明書、及美國專利第3,775,452號說明書所記載者);使鉑黑或鈀等之鉑族金屬擔載於氧化鋁、二氧化矽、碳等之載體者;銠-烯烴錯合物;氯參(三苯基膦)銠(所謂威爾金森觸媒);以及,氯化鉑、氯鉑酸或氯鉑酸鹽與含乙烯基之矽氧烷(特別是含乙烯基之環狀矽氧烷)之錯合物。
觸媒之使用量係觸媒量即可,作為鉑族金屬,對於供於反應的原料化合物之總量為0.0001~0.1質量%、理想為0.001~0.01質量%為理想。加成反應係即使溶劑不存在亦可實施,但按照必要亦可使用溶劑。作為溶劑係例如甲苯、二甲苯等之烴系溶劑為理想。反應溫度係觸媒不去活化,而且,在短時間可結束聚合的溫度即可,例如40~150℃,特別是60~120℃為理想。反應時間係藉由聚合物之種類及量而適宜地選擇即可,例如0.5~100小時,特別是0.5~30小時為理想。在使用了溶劑的情況係於反應結束後提供減壓餾去而餾去溶劑。
反應方法係無特別限制,例如在使以式(3)表示的化合物、與以式(4)表示的化合物、以式(5)表示的化合物、以式(6)表示的化合物反應的情況,首先,混合以式(5)及式(6)表示的化合物而加溫後,於前述混合液添加金屬觸媒,接著花費0.1~5小時滴下以式
(3)及式(4)表示的化合物為佳。
各化合物之調配比係以上述式(3)及式(4)表示的化合物所具有的氫矽烷基之莫耳數之合計、以上述式(5)及式(6)表示的化合物所具有的烯基之莫耳數之合計係以相對於烯基之合計莫耳數而言的氫矽烷基之合計莫耳數為0.67~1.67,理想為0.83~1.25之方式調配為佳。聚合物之重量平均分子量係將如o-烯丙基酚般的單烯丙基化合物、或三乙基氫矽烷般的單氫矽烷或單氫矽氧烷作為分子量調整劑使用而可控制。
尚,樹脂中之矽氧烷量,若為30~80質量%則在薄膜之形成性、模塑性能、低翹曲性之要點上為理想。
(B)成分係具有三氮雜苯骨架的苯酚酚醛清漆化合物,係將苯酚類、醛類及含胺基之三氮雜苯類縮合而得的化合物。作為苯酚類係可舉出苯酚、鄰甲酚、間甲酚、二甲酚、乙基苯酚、丁基苯酚、壬基苯酚、辛基苯酚等之烷基酚類;雙酚A、雙酚F、雙酚S、雙酚AD、四甲基雙酚A、間苯二酚、兒茶酚等之多價酚類;單羥基萘、二羥基萘等之萘酚類、苯基苯酚、胺基苯酚等,以與醛類之縮合,設為酚醛樹脂。特別是甲酚酚醛為佳。
更進一步藉由三氮雜苯與酚醛樹脂之縮合,可得到本發明之具有三氮雜苯骨架的苯酚化合物。具體而言,可舉出以下述通式(7)所示的具有三氮雜苯骨架的苯酚化合
物。
(式中,R11係氫原子或甲基,s係1~10之整數,t係1~5之整數。R11係甲基為理想。)
作為上述具有三氮雜苯骨架的酚樹脂係例如可使用由DIC公司販賣的PHENOLITE LA系列。
作為具有此三氮雜苯骨架的酚樹脂係於樹脂中具有5~24質量%三氮雜苯骨架為理想,更進一步係可使用氮含有率為5~25質量%,理想為8~20質量%,羥基當量為100~160,理想為120~150者。其中,由難燃性之觀點視之,使用氮含有率為10質量%以上20質量%以下者為最佳。
(B)成分係用以與聚矽氧樹脂(A)藉由熱而進行交聯反應之成分,以加入(B)成分,更提高樹脂之向晶圓之密著性、保護性、信賴性、難燃性。上述之酚化合物係可單獨使用1種,亦可併用2種以上。
(B)成分之具有三氮雜苯骨架的苯酚化合物之調配量係無特別限定,但對於(A)成分100質量份為5~50質量份為佳,理想為5~40質量份。具有三氮雜苯骨架的苯酚化合物之調配量如為上述範圍內,則難燃性樹脂組成物之密著性、保護性、難燃性更提高。又,該難燃性
樹脂組成物之硬化物係因為成為信賴性優異的硬化物而為理想。
(C)成分係於本發明之難燃性樹脂組成物,給予晶圓保護性,更進一步,使耐熱性、耐濕性、強度等提高,可提高信賴性、難燃性。作為填料,例如可舉出滑石、燒結黏土、未燒結黏土、雲母、玻璃等之矽酸鹽、氧化鈦、氧化鋁、熔融二氧化矽(熔融球狀二氧化矽、熔融破碎二氧化矽)、結晶二氧化矽粉末等之氧化物、碳酸鈣、碳酸鎂、水滑石等之碳酸鹽、氫氧化鋁、氫氧化鎂、氫氧化鈣等之氫氧化物、硫酸鋇、硫酸鈣、亞硫酸鈣等之硫酸鹽或亞硫酸鹽、硼酸鋅、偏硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等之硼酸鹽、氮化鋁、氮化硼、氮化矽等之氮化物等。此等之填料係可以單獨1種混合,亦可併用2種以上混合。在此等之中熔融二氧化矽、結晶二氧化矽等之二氧化矽粉末為理想。作為前述二氧化矽粉末係例如可舉出發煙二氧化矽、沈降性二氧化矽等之補強性二氧化矽;石英等之結晶性二氧化矽。具體而言係可例示日本AEROSIL公司製之Aerosil R972、R974、R976;Admatechs公司製之SE-2050、SC-2050、SE-1050、SO-E1、SO-C1、SO-E2、SO-C2、SO-E3、SO-C3、SO-E5、SO-C5;信越化學工業公司製之Musil120A、Musil130A等。
填料之平均粒徑係無特別限定,但0.01μm以
上20μm以下為理想,特別是0.01μm以上10μm以下為理想。如無機填充劑之平均粒徑為上述下限值以上,則無機填充劑變為難以凝聚,因為強度變高所以為理想。又,如為上述上限值以下,則向晶片間之樹脂之流動性變高,因為填充性變為良好所以為理想。尚,平均粒徑係例如可藉由雷射光繞射法的粒度分布測定裝置而求出,可作為質量平均值D50(亦即,累積質量成為50%時之粒徑或中值徑)測定。
填料之含量係對於本發明之難燃性樹脂組成物之總質量,設為60質量%以上95質量%以下,理想係70質量%以上90質量%以下為佳。填料之含量如為上述上限值以下則薄膜系性能變高,樹脂之流動性變高,因為填充性變為良好所以為理想。又,如為上述下限值以上,則充分地顯現效果。
又,於本發明之難燃性樹脂組成物亦可以提高向晶圓之密著性、保護性的目的而添加環氧樹脂。環氧樹脂係因為與聚矽氧樹脂(A)一起與酚化合物(B)進行交聯反應,所以難燃性樹脂之向晶圓之密著性、保護性、信賴性為更提高。
環氧樹脂係例如可舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、或加氫於該等者、苯酚酚醛清漆型環氧樹脂、甲酚酚醛型環氧樹脂等之縮水甘油醚系環氧樹脂、六
氫鄰苯二甲酸縮水甘油酯、二聚酸縮水甘油酯等之縮水甘油酯系環氧樹脂、三縮水甘油基異三聚氰酸酯、四縮水甘油基二胺基二苯基甲烷等之縮水甘油基胺基系環氧樹脂等,理想為雙酚A型環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛型環氧樹脂,但由難燃性之觀點,大量含有芳香族碳的環氧樹脂為理想。作為此等之市售品係例如可舉出商品名為jER1001(三菱化學公司製)、EPICLON830S(DIC製)、jER517(三菱化學公司製)、EOCN103S(日本化藥公司製)等。
環氧樹脂之調配量係在調配的情況,對於(A)成分100質量份為1~50質量份,理想為2~30質量份為佳。
又,本發明之難燃性樹脂組成物係可更進一步含有環氧樹脂硬化促進劑。藉由含有環氧樹脂硬化促進劑,可適切且均勻地進行硬化反應。環氧樹脂硬化促進劑之調配量係對於(A)成分100質量份為0.1~10質量份,理想為0.2~5質量份為佳。
環氧樹脂硬化促進劑係例如可舉出2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑,以及此等之化合物之異氰酸乙酯化合物、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑、2-苯基-4,5-二羥甲基咪唑等之咪唑化合物、1,8-二氮雜雙環(5.4.0)十一碳烯-7(DBU)、1,5-二氮雜雙環(4.3.0)壬烯-5(DBN)、DBU之有機酸
鹽、DBU之酚樹脂鹽、DBU衍生物之四苯基硼酸鹽等之DBU系化合物、三苯基膦、三丁基膦、參(對甲基苯基)膦、參(對甲氧基苯基)膦、參(對乙氧基苯基)膦、三苯基膦‧三苯基硼酸鹽、四苯基膦‧四苯基硼酸鹽等之三有機膦類、季鏻鹽、三乙烯銨‧三苯基硼酸鹽等之三級胺、以及該之四苯基硼酸鹽等。上述之環氧樹脂硬化促進劑係可單獨使用1種,亦可併用2種以上。
本發明之難燃性樹脂組成物亦可含有矽烷偶合劑。藉由含有矽烷偶合劑,可更提高難燃性樹脂組成物之向被接著體之密著性。作為矽烷偶合劑係可舉出環氧基矽烷偶合劑、含芳香族之胺基矽烷偶合劑等。此等係可以單獨使用,亦可組合二種以上使用。矽烷偶合劑之含量係無特別限定,但設為本發明之難燃性接著劑組成物之總質量之0.01質量%以上5質量%以下為理想。
又,本發明之難燃性樹脂組成物亦可含有上述以外之成分。為了提高聚矽氧樹脂(A)和具有三氮雜苯骨架的苯酚化合物(B)之相溶性,或是為了提高樹脂組成物之貯藏安定性或作業性等之各種特性,亦可適宜添加各種添加劑。例如,可添加脂肪酸酯、甘油酸酯、硬脂酸鋅、硬脂酸鈣等之內部脫模劑、酚系、磷系、或是硫系防氧化劑等。其他任意成分係亦可以無溶劑而添加於本發明之難燃性樹脂組成物,但亦可溶解或分散於有機溶劑,
調製作為溶液或分散液後添加。
溶劑係作為用以調製難燃性樹脂組成物之分散液之溶劑,可使用以下說明的有機溶劑。作為此有機溶劑係可舉出N,N-二甲基乙醯胺、甲基乙基酮、N,N-二甲基甲醯胺、環己酮、環戊酮、N-甲基-2-吡咯啶酮、甲苯、甲醇、乙醇、異丙醇、丙酮、丙二醇單甲醚、丙二醇單甲醚乙酸酯等,理想為可舉出甲基乙基酮、環戊酮、丙二醇單甲醚、丙二醇單甲醚乙酸酯等。此等之有機溶劑係可單獨使用1種,亦可併用2種以上。該使用量係以樹脂組成物之固形分濃度成為50~80質量%之方式進行為理想。
本發明之難燃性樹脂組成物係形成至薄膜狀為理想。如為如此的難燃性樹脂薄膜,則特別是成為對於大口徑、薄膜晶圓而具有良好的模塑性能者,在將晶圓總括而模塑時,並無注入樹脂的必要。因此,以先前之轉移成形會產生的線變形、向晶圓表面之填充不良或以壓縮成形法會產生的成形範圍之控制之難度、液狀密封樹脂之流動性和物性之問題係可根本上解除。
更進一步,難燃性樹脂薄膜之厚度係無特別限制,但50μm以上以1,000μm以下為理想,更進一步係80~700μm為較理想。如為如此的厚度,則因為成為低翹
曲性、保護性優異的難燃性樹脂薄膜所以為理想。
因而,本發明係提供由前述難燃性樹脂組成物而形成的難燃性樹脂薄膜。作為該難燃性樹脂薄膜,例如,可舉出具有由本發明之難燃性樹脂組成物形成的難燃性樹脂薄膜、和被覆該難燃性樹脂薄膜的保護層的附有保護層之難燃性樹脂薄膜。該保護層係可使用後述所說明者。以下,說明關於本發明之難燃性樹脂薄膜之製造方法之一例。
事先製作混合本發明之(A)聚矽氧樹脂、(B)具有特定構造的苯酚化合物、(C)填料、按照必要,其他之任意成分及有機溶劑而調整為液狀的難燃性樹脂組成物溶液,將該難燃性樹脂組成物溶液使用反輥塗布機、缺角輪塗佈機等,以成為所期望之厚度之方式塗布於保護層(保護薄膜、剝離薄膜)。藉由將已塗布前述難燃性樹脂組成物溶液的保護層通過串聯式乾燥機,以80~160℃花費2~20分鐘而除去有機溶劑而使其乾燥,接著藉由使用輥層合機等而與其他保護層壓接,進行層合,可得本發明之難燃性樹脂薄膜。
又,作為壓接條件係無特別限制,但以溫度50~100℃、線壓0.5~5kgf/cm、速度0.1~5m/min而層合為理想。
又,作為其他態樣,將上述難燃性樹脂薄膜(保護層/難燃性樹脂組成物薄膜/保護層)準備2個以上,由各自
之難燃性樹脂薄膜剝離保護層,使兩難燃性樹脂薄膜相互間層合,亦可得到由多層之難燃性樹脂薄膜形成的複合薄膜。在層合時係一邊以30~120℃加溫,同時使薄膜相互間層合為理想。
前述保護層係如不損及由本發明之難燃性樹脂組成物所形成的樹脂薄膜之形態而可剝者則無特別限定,但作為晶圓用之保護薄膜及剝離薄膜活用者,通常,可舉出聚乙烯(PE)薄膜、聚丙烯(PP)薄膜、聚甲基戊烯(TPX)薄膜、已施以脫模處理的聚酯薄膜等之塑膠薄膜等。又,剝離力係50~300mN/min為理想,厚度係25~150μm,理想為38~125μm。
藉由本發明之難燃性樹脂薄膜而總括而被模塑的晶圓係無特別限制,但可為於表面已裝載半導體元件(晶片)的晶圓,亦可為於表面已製作半導體元件的半導體晶圓。本發明之難燃性樹脂薄膜係於模塑前係對於如此的晶圓表面的填充性為良好,又,於模塑後係具有低翹曲性,如此的晶圓之保護性優異。又,本發明之難燃性樹脂薄膜係無特別限制,但可合適地使用於模塑直徑8吋以上,例如直徑8吋(200mm)、12吋(300mm)或以上的大口徑(450mm)的晶圓或薄型晶圓。
又,作為薄型晶圓係使用在被薄型加工至厚度5~300μm的晶圓為理想。
關於本發明之已使用難燃性樹脂薄膜的晶圓之模塑方法係無特別限定,但例如可以將貼於樹脂薄膜上的一方之保護層剝離,使用Takatori公司製之真空層疊機(製品名:TEAM-300)等,在真空室內將真空度設定為50~1,000Pa,理想為50~500Pa,例如設定為100Pa,80~200℃,理想為80~130℃,例如以100℃將已貼合另一方之保護層的難燃性樹脂薄膜總括於上述晶圓而使其密著,回到常壓後,將上述晶圓冷卻至室溫而由上述真空層疊機取出,以剝離另一方之保護層而進行。
又,對於已層合半導體晶片的晶圓係可合適地使用具備壓模裝置或真空隔膜積層機和用以平坦化的金屬板加壓機的裝置等。例如,作為壓模裝置係可使用APIC YAMADA公司製之裝置(製品名:MZ-824-01),在將已層合半導體晶片的300mm矽晶圓進行模塑時係可以100~180℃、成型壓力100~300kN、夾持時間30~90秒、成型時間5~20分而成型。
又,作為具備真空隔膜積層機和用以平坦化之金屬板加壓機的裝置係可使用Nichigo-Morton公司製之裝置(製品名:CVP-300),層合溫度100~180℃、真空度50~500Pa、壓力0.1~0.9MPa、層合時間30~300秒層合
後,以上下熱板溫度100~180℃、壓力0.1~3.0MPa、加壓時間30~300秒而平坦化難燃性樹脂成型面。
模塑後,藉由在120~220℃以15~180分鐘之條件加熱難燃性樹脂薄膜,可硬化難燃性樹脂。
更進一步,在本發明係提供一種半導體裝置,其係將以已加熱硬化前述難燃性樹脂薄膜而成的加熱硬化皮膜所模塑的半導體晶圓進行單片化,具有加熱硬化皮膜的半導體裝置。已模塑的晶圓係於切割膠帶等之半導體加工用保護膠帶以模塑樹脂面、或晶圓面相接之方式貼合,被設置於切割機之吸附台上,此已模塑的晶圓係使用具備切割刀的切割鋸(例如,DISCO製,DFD6361)而切斷。切割時之轉軸旋轉數及切斷速度係適宜地選擇即可,但通常為轉軸旋轉數25,000~45,000rpm、切斷速度10~50mm/sec。又,單片化的尺寸係依半導體封裝之設計,而大約2mm×2mm~30mm×30mm左右。
由本發明,將翹曲少且被充分地保護的晶圓,使用切割刀等的切割而單片化所得到的半導體裝置係成為良率佳的高品質的半導體裝置。
又,在本發明亦提供一種半導體裝置之製造方法,該製造方法係具有將於兩面已形成保護層的難燃性樹脂薄膜
之一方之保護層由難燃性樹脂薄膜剝離,將露出於表面的難燃性樹脂薄膜貼附於半導體晶圓,將另一方之保護層由難燃性樹脂薄膜剝離而將半導體晶圓以上述之方式進行模塑的步驟、與將已被模塑的半導體晶圓進行單片化的步驟。
以下,表示合成例、實施例及比較例而更進一步說明本發明,但本發明係不被限定於下述實施例。
在合成例中,各聚合物之重量平均分子量係使用GPC管柱TSKgel Super HZM-H(東曹公司製),以流量0.6毫升/分,溶出溶媒四氫呋喃,管柱溫度40℃之分析條件,將單分散聚苯乙烯設為標準的凝膠滲透層析法(GPC)而測定。
將在實施例、比較例使用的化合物表示於下述。
於具備了攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶內,加入以上述式(S-1)所示的化合物147g(0.35莫耳)及以上述式(S-2)所示的化合物27.9g(0.15莫耳)後,加入甲苯2,000g,加溫至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,花費1小時滴下以上述式(S-3)所示的化合物77.8g(0.4
莫耳)及以上述式(S-4)所示的化合物(x=40)276.7g(0.1莫耳)(氫矽烷基之合計莫耳數/烯基之合計莫耳數=1/1)。滴下結束後,加溫至100℃而6小時熟化後,從反應溶液減壓餾去甲苯而可得的生成物之藉由GPC而測定的聚苯乙烯換算之重量平均分子量為45,000。將此設為樹脂(1),供於實施例、比較例。尚,被包含於樹脂(1)中的矽氧烷量為58質量%。尚,在樹脂(1)的構成單位比係依饋入量,a=0.2、b=0.8。
於具備了攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶內,加入以上述式(S-1)所示的化合物210g(0.5莫耳)後,加入甲苯2,100g,加溫至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,花費2小時滴下以上述式(S-3)所示的化合物77.8g(0.4莫耳)及以上述式(S-4)所示的化合物(x=100)361.9g(0.1莫耳)(氫矽烷基之合計莫耳數/烯基之合計莫耳數=1/1)。滴下結束後,加溫至100℃而6小時熟化後,從反應溶液減壓餾去甲苯而可得的生成物之藉由GPC而測定的聚苯乙烯換算之重量平均分子量為48,000。將此設為樹脂(2),供於實施例。尚,被包含於樹脂(2)中的矽氧烷量為69質量%。尚,在樹脂(2)的構成單位比係依饋入量,a=0.2、b=0.8。
於具備了攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶內,加入以上述式(S-1)所示的化合物105g(0.25莫耳)及以上述式(S-2)所示的化合物46.5g(0.25莫耳)後,加入甲苯1,000g,加溫至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)0.5g,花費1小時滴下以上述式(S-3)所示的化合物77.8g(0.40莫耳)及以上述式(S-4)所示的化合物(x=8)70.6g(0.10莫耳)(氫矽烷基之合計莫耳數/烯基之合計莫耳數=1/1)。滴下結束後,加溫至100℃而6小時熟化後,從反應溶液減壓餾去甲苯而可得的生成物之藉由GPC而測定的聚苯乙烯換算之重量平均分子量為35,000。將此設為樹脂(3),供於實施例。尚,被包含於樹脂(3)中的矽氧烷量為39質量%。尚,在樹脂(3)的構成單位比係依饋入量,a=0.2、b=0.8。
於具備了攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶內,加入以上述式(S-5)所示的化合物151g(0.35莫耳)及以上述式(S-2)所示的化合物27.9g(0.15莫耳)後,加入甲苯2,000g,加溫至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,花費1小時滴下以上述式(S-3)所示的化合物77.8g(0.4莫耳)及以上述式(S-4)所示的化合物(x=40)276.7g
(0.1莫耳)(氫矽烷基之合計莫耳數/烯基之合計莫耳數=1/1)。滴下結束後,加溫至100℃而6小時熟化後,從反應溶液減壓餾去甲苯而可得的生成物之藉由GPC而測定的聚苯乙烯換算之重量平均分子量為38,000,將此設為樹脂(4),供於比較例。尚,被包含於樹脂(4)中的矽氧烷量為57質量%。
以下述表1所記載的組成,調配(A)在上述合成例1~3合成的聚矽氧樹脂(上述樹脂(1)~(3))、(B)具有特定構造的苯酚化合物、(C)填料及任意成分。更進一步,添加固形成分濃度成為65質量%的量之環戊酮,使用球磨機而攪拌,進行混合及溶解分散,調製樹脂組成物之分散液。尚,表示表1中之調配量的數值之單位係「質量份」。比較例1係含有與本發明之聚矽氧樹脂(A)相異的聚矽氧樹脂(上述樹脂(4))的樹脂組成物。比較例2係含有本發明以外之酚化合物的苯酚酚醛清漆樹脂的樹脂組成物。比較例3係不含有(C)填料的樹脂組成物。
作為薄膜塗佈機使用模具塗佈機,將下述E7304作為剝離薄膜(1)使用,將表1之實施例1所示的難燃性樹
脂組成物塗布於剝離薄膜上。接著,以5分鐘通過設定為100℃的熱風循環烘箱(長度4m),將膜厚100μm之難燃性樹脂薄膜形成於上述剝離薄膜(1)上。
接著,由難燃性樹脂薄膜之上,將聚乙烯薄膜(厚度100μm)使用層合輥而以線壓力10N/cm、100℃貼合,製作由剝離薄膜(1)/難燃性樹脂薄膜/保護薄膜所形成的層合薄膜(1)。
又,除了取代剝離薄膜(1)而將下述E7302作為剝離薄膜(2)使用以外係與上述同樣地進行而製作由剝離薄膜(2)/難燃性樹脂薄膜/保護薄膜所構成的層合薄膜(2)。
更進一步,去除已得到的層合薄膜(1)、(2)各自之聚乙烯薄膜(保護薄膜),重疊難燃性樹脂薄膜相互間,投入已加溫至60℃的熱輥層合機,形成具有膜厚為200μm之樹脂薄膜的剝離薄膜(1)/難燃性樹脂薄膜/剝離薄膜(2)所構成的複合薄膜。
以與實施例1同樣之方法,使用表1之其他樹脂組成物而製作具有膜厚為200μm之樹脂薄膜的複合薄膜。
尚,在實施例6係以同樣之方法,製作膜厚為500μm之樹脂薄膜。
使用於樹脂組成物之調製的各成分表示如下。
.PHENOLITE LA-7054(商品名)(含三氮雜苯骨架之甲酚酚醛DIC公司製,氮含有率:12質量%、OH當量:125)
.PHENOLITE LA-7751(商品名)(含三氮雜苯骨架之甲酚酚醛DIC公司製,氮含有率:14質量%、OH當量:135)
.PHENOLITE LA-1356(商品名)(含三氮雜苯骨架之甲酚酚醛DIC公司製,氮含有率:19質量%、OH當量:146)
‧二氧化矽(Admatechs製,平均粒徑5.0μm)其他之成分
‧EOCN-103S(商品名)(日本化藥公司製環氧樹脂,環氧當量:209~219)
‧Curezol 2P4MHZ(商品名)(四國化成工業公司製,2-苯基-4-甲基-5-羥甲基咪唑)
‧PHENOLITE TD-2090(商品名)(DIC公司製,OH當量:105,酚醛清漆型酚樹脂,不含有三氮雜苯骨架)
‧三聚氰胺(和光純藥工業公司製,胺當量:42、氮含有率:66.6質量%)
剝離薄膜(1):E7304(商品名)東洋紡織公司製聚酯,厚度75μm、剝離力200mN/50mm)
剝離薄膜(2):E7302(商品名)東洋紡織公司製聚酯,厚度75μm、剝離力90mN/50mm)
保護薄膜:聚乙烯薄膜(厚度100μm)
準備晶圓厚度100μm之直徑12吋(300mm)矽晶圓。關於實施例1~6及比較例1~4之複合薄膜,剝離剝離薄膜(2),使用真空層疊機(Takatori公司製,製品名:TEAM-300M),將真空室內設定為真空度250Pa,以110℃,統一樹脂薄膜而貼附於上述矽晶圓。回到常壓後,將上述矽晶圓冷卻至25℃而由上述真空層疊機取出,剝離殘留之剝離薄膜(1)。
所得的附樹脂薄膜之晶圓係以惰性氛圍烘箱,以180℃、2小時加熱而進行樹脂之硬化。
將樹脂薄膜硬化後之晶圓翹曲量進行雷射(東朋Technology公司製FLX-3300-T)測定,將所得的值表示於表2。
尚,在翹曲量大,無法以本裝置測定的情況係表示使用標準(JIS 1級)而測定的值。
晶圓支持性係將支持晶圓之端時之晶圓之撓曲量以標準(JIS 1級)而測定,將在20mm以內設為良好,在超過20mm的情況判斷為不良的結果,表示於表2。
將各樹脂薄膜(25μm)使用真空薄膜層疊機(溫度:100℃、壓力:100Pa、TEAM-100,Takatori公司製),貼合於直徑6吋半導體晶圓(厚度625μm,信越化學工業公司製)。接著,使用具備切割刀的切割鋸(DAD685,DISCO公司製)而切斷為2mm×2mm平方之大小。在另外準備的15mm×15mm平方之矽晶圓(基座基板)上,經由樹脂薄膜,以150℃、50mN之荷重貼合2mm×2mm平方之晶片。之後,以180℃加熱2小時而使樹脂薄膜硬化,得到試驗片。試驗片係每個製造各5個,供於以下之接著力測定試驗。
使用黏結強度試驗機(Dage series 4000-PXY:Dage公司製),測定在半導體晶片(2mm×2mm)由基座基板(15mm×15mm平方之矽晶圓)剝離時受到的阻抗力,評估樹脂薄膜層之密著力。測試條件係以測試速度200μm/sec,測試高度50μm進行。將結果表示於表2。表2所示的數值係在各自5個之試驗體的測定值之平均,數值越高表示接著薄片之接著力越高。
將硬化後之附樹脂薄膜之晶圓使用具備切割刀的切割鋸(DAD685,DISCO公司製,轉軸旋轉數係40,000rpm,切斷速度係20mm/sec)得到10mm×10mm平方之試驗片。將已得到的試驗片(每個各10片)供於熱循環試驗(以-25℃保持10分鐘,以125℃保持10分鐘重複1,000循環),藉由超音波檢查而確認熱循環試驗後之樹脂薄膜之由晶圓剝離之狀態。將全部不產生剝離者判定為「良好」,即使產生1個者就判定為「不良」。將結果表示於表2。
關於實施例1~6及比較例1~4之複合薄膜,剝離剝離薄膜(2),以惰性氛圍烘箱,以180℃、2小時加熱而進行樹脂之硬化。
關於已得到的硬化薄膜,依據UL94難燃性規格,評
估難燃性。在表示滿足UL94V-0規格的難燃性的情況評估為「良好」,將該樣本不滿足UL94V-0規格的情況評估為「不良」。將結果表示於表2。
以上之結果,可了解由本發明之難燃性樹脂組成物得到的樹脂薄膜係相較於比較例而全體上之晶圓翹曲量少,晶圓支持性、密著性、信賴性、難燃性優異。
如以上說明,如為本發明之難燃性樹脂組成物,則因為可形成至薄膜狀,所以係將晶圓總括而可進行模塑(晶圓塑封)者,表示對於大口徑、薄膜晶圓具有良好的模塑性能者。又,由本發明之樹脂組成物而得的樹脂薄膜係表示低翹曲性及晶圓保護性優異,密著性、信賴性、難燃性亦優異。
尚,本發明係不被限定於上述實施形態。上述實施形態為例示,任何具有與記載於本發明之專利申請範圍的技術上的思想和實質上同一的構成,顯現出同樣的作用效果者,均包含於本發明之技術上的範圍。
Claims (9)
- 一種難燃性樹脂組成物,其特徵為含有下述(A)、(B)及(C)成分,(A)具有以下述組成式(1)所表示的構成單位的重量平均分子量為3,000~500,000的聚矽氧樹脂、
- 如請求項1之難燃性樹脂組成物,其中,(B)成分為以下述通式(7)所示的具有三氮雜苯骨架的苯酚化合物,
- 如請求項1或2之難燃性樹脂組成物,其中,前述(B)成分之量相對於前述(A)成分100質量份為5~50質量份,前述(C)成分對全質量之質量分率為70~90質量%。
- 如請求項1之難燃性樹脂組成物,其係進一步含有環氧樹脂。
- 如請求項1之難燃性樹脂組成物,其係進一步含有環氧樹脂硬化促進劑。
- 如請求項1之難燃性樹脂組成物,其中,前述填料為二氧化矽。
- 一種難燃性樹脂薄膜,其特徵為將如請求項1~6中任1項之難燃性樹脂組成物薄膜化而形成者。
- 一種半導體裝置之製造方法,其特徵為具有將如 請求項7之難燃性樹脂薄膜貼附於半導體晶圓,模塑該半導體晶圓的步驟、加熱硬化前述樹脂薄膜的步驟與單片化該已模塑的半導體晶圓的步驟。
- 一種半導體裝置,其特徵為將以已加熱硬化的如請求項7之難燃性樹脂薄膜而成的加熱硬化皮膜所模塑的半導體晶圓單片化而成,且具有前述難燃性加熱硬化皮膜者。
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Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3220972A (en) | 1962-07-02 | 1965-11-30 | Gen Electric | Organosilicon process using a chloroplatinic acid reaction product as the catalyst |
US3159662A (en) | 1962-07-02 | 1964-12-01 | Gen Electric | Addition reaction |
US3159601A (en) | 1962-07-02 | 1964-12-01 | Gen Electric | Platinum-olefin complex catalyzed addition of hydrogen- and alkenyl-substituted siloxanes |
US3775452A (en) | 1971-04-28 | 1973-11-27 | Gen Electric | Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes |
JPS61236833A (ja) * | 1985-04-15 | 1986-10-22 | Matsushita Electric Works Ltd | 積層板 |
JP3785749B2 (ja) * | 1997-04-17 | 2006-06-14 | 味の素株式会社 | エポキシ樹脂組成物並びに該組成物を用いた多層プリント配線板の製造法 |
EP0877040B1 (en) * | 1997-05-09 | 2000-04-12 | Dainippon Ink And Chemicals, Inc. | Phenol resin composition and method of producing phenol resin |
JP2000226439A (ja) * | 1999-02-03 | 2000-08-15 | Sanyu Resin Kk | 難燃性エポキシ樹脂組成物 |
JP3460820B2 (ja) * | 1999-12-08 | 2003-10-27 | 日本電気株式会社 | 難燃性エポキシ樹脂組成物 |
JP2001226464A (ja) * | 2000-02-15 | 2001-08-21 | Japan Epoxy Resin Kk | 熱硬化性樹脂組成物 |
JP3479884B2 (ja) * | 2000-02-29 | 2003-12-15 | 大塚化学ホールディングス株式会社 | 難燃性エポキシ樹脂組成物及び電子部品 |
JP2003073641A (ja) * | 2001-08-31 | 2003-03-12 | Hitachi Chem Co Ltd | 難燃性接着フィルム、半導体搭載用配線基板、半導体装置及び半導体装置の製造方法 |
JP3944627B2 (ja) * | 2001-10-16 | 2007-07-11 | 大日本インキ化学工業株式会社 | フェノール樹脂組成物 |
JP2004059689A (ja) * | 2002-07-26 | 2004-02-26 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
US7070207B2 (en) * | 2003-04-22 | 2006-07-04 | Ibiden Co., Ltd. | Substrate for mounting IC chip, multilayerd printed circuit board, and device for optical communication |
JPWO2005052666A1 (ja) * | 2003-11-27 | 2008-03-06 | イビデン株式会社 | Icチップ実装用基板、マザーボード用基板、光通信用デバイス、icチップ実装用基板の製造方法、および、マザーボード用基板の製造方法 |
EP2280044A4 (en) | 2008-05-21 | 2015-08-19 | Nagase Chemtex Corp | EPOXY RESIN COMPOSITION FOR THE PACKAGING OF AN ELECTRONIC COMPONENT |
JP5413340B2 (ja) * | 2009-09-30 | 2014-02-12 | 信越化学工業株式会社 | エポキシ基含有高分子化合物、これを用いた光硬化性樹脂組成物、パターン形成方法及び電気・電子部品保護用皮膜 |
JP5373736B2 (ja) * | 2010-10-28 | 2013-12-18 | 信越化学工業株式会社 | 接着剤組成物及び接着剤シート、半導体装置保護用材料、及び半導体装置 |
US10030141B2 (en) * | 2012-10-19 | 2018-07-24 | Mitsubishi Gas Chemical Company, Inc. | Resin composition, pre-preg, laminate, metal foil-clad laminate, and printed wiring board |
JP6251575B2 (ja) * | 2013-01-23 | 2017-12-20 | 日東電工株式会社 | シート状の電子部品封止用熱硬化性樹脂組成物、樹脂封止型半導体装置、及び樹脂封止型半導体装置の製造方法 |
JP6098531B2 (ja) * | 2014-01-23 | 2017-03-22 | 信越化学工業株式会社 | 樹脂組成物、樹脂フィルム及び半導体装置とその製造方法 |
JP6011745B2 (ja) * | 2014-10-01 | 2016-10-19 | Dic株式会社 | エポキシ樹脂組成物及びその硬化物 |
JP6265105B2 (ja) * | 2014-10-30 | 2018-01-24 | 信越化学工業株式会社 | シリコーン樹脂、樹脂組成物、樹脂フィルム及び半導体装置とその製造方法 |
-
2015
- 2015-11-04 JP JP2015216560A patent/JP2017088656A/ja active Pending
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2016
- 2016-10-31 EP EP16196522.3A patent/EP3165555B1/en active Active
- 2016-11-03 TW TW105135746A patent/TWI766846B/zh active
- 2016-11-03 KR KR1020160145646A patent/KR20170052504A/ko not_active Application Discontinuation
- 2016-11-03 US US15/342,479 patent/US10035912B2/en active Active
- 2016-11-04 CN CN201610962697.XA patent/CN106633903A/zh active Pending
Also Published As
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CN106633903A (zh) | 2017-05-10 |
JP2017088656A (ja) | 2017-05-25 |
EP3165555B1 (en) | 2019-06-05 |
KR20170052504A (ko) | 2017-05-12 |
EP3165555A1 (en) | 2017-05-10 |
US20170121526A1 (en) | 2017-05-04 |
US10035912B2 (en) | 2018-07-31 |
TWI766846B (zh) | 2022-06-11 |
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