CA2717076A1 - Dispositif d'assemblage a temperature normale - Google Patents

Dispositif d'assemblage a temperature normale Download PDF

Info

Publication number
CA2717076A1
CA2717076A1 CA2717076A CA2717076A CA2717076A1 CA 2717076 A1 CA2717076 A1 CA 2717076A1 CA 2717076 A CA2717076 A CA 2717076A CA 2717076 A CA2717076 A CA 2717076A CA 2717076 A1 CA2717076 A1 CA 2717076A1
Authority
CA
Canada
Prior art keywords
substrate
cassette
room temperature
sample stage
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2717076A
Other languages
English (en)
Other versions
CA2717076C (fr
Inventor
Takeshi Tsuno
Takayuki Goto
Masato Kinouchi
Satoshi Tawara
Jun Utsumi
Yoichiro Tsumura
Kensuke Ide
Takenori Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Machine Tool Co Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Publication of CA2717076A1 publication Critical patent/CA2717076A1/fr
Application granted granted Critical
Publication of CA2717076C publication Critical patent/CA2717076C/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Micromachines (AREA)

Abstract

Un dispositif d'assemblage à froid présente un mécanisme de réglage d'angle destiné à supporter une première base d'échantillon, qui tient un premier substrat, sur un premier étage, de telle sorte que la direction de la première base d'échantillon puisse être modifiée ; un premier dispositif de d'entraînement destiné à entraîner, dans la première direction, le premier étage ; un second dispositif d'entraînement destiné à entraîner, dans la seconde direction, une seconde base d'échantillon destinée à tenir un second substrat ; et une base de support de chariot destinée à supporter la seconde base d'échantillon dans la première direction, lorsque le second substrat est pressé contre le premier substrat. Le dispositif d'assemblage à froid peut appliquer une grande charge qui dépasse la capacité de port de charge du second dispositif d'entraînement sur le premier substrat et sur le second substrat. En outre, le dispositif d'assemblage à froid peut modifier, à l'aide du mécanisme de réglage d'angle, la direction du premier substrat de telle sorte que le premier substrat et le second substrat se trouvent en contact parallèle l'un avec l'autre. Ainsi, la grande charge peut être appliquée de manière uniforme sur les surfaces assemblées entre les substrats.
CA2717076A 2008-02-29 2008-03-11 Dispositif d'assemblage a temperature normale Expired - Fee Related CA2717076C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008050551A JP4209457B1 (ja) 2008-02-29 2008-02-29 常温接合装置
JP2008-050551 2008-02-29
PCT/JP2008/054344 WO2009107250A1 (fr) 2008-02-29 2008-03-11 Dispositif d'assemblage à froid

Publications (2)

Publication Number Publication Date
CA2717076A1 true CA2717076A1 (fr) 2009-09-03
CA2717076C CA2717076C (fr) 2015-05-19

Family

ID=40325702

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2717076A Expired - Fee Related CA2717076C (fr) 2008-02-29 2008-03-11 Dispositif d'assemblage a temperature normale

Country Status (8)

Country Link
US (2) US8857487B2 (fr)
EP (1) EP2249377B1 (fr)
JP (1) JP4209457B1 (fr)
KR (1) KR101163325B1 (fr)
CN (1) CN101960557B (fr)
CA (1) CA2717076C (fr)
TW (1) TWI407516B (fr)
WO (1) WO2009107250A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209457B1 (ja) 2008-02-29 2009-01-14 三菱重工業株式会社 常温接合装置
JP4672793B2 (ja) * 2009-09-14 2011-04-20 三菱重工業株式会社 接合装置制御装置および接合方法
JP4659112B1 (ja) * 2009-09-28 2011-03-30 三菱重工業株式会社 接合装置
JP4831842B2 (ja) * 2009-10-28 2011-12-07 三菱重工業株式会社 接合装置制御装置および多層接合方法
JP5535610B2 (ja) * 2009-12-22 2014-07-02 三菱重工業株式会社 Ｓｏｉ半導体基板製造方法
FR2961630B1 (fr) * 2010-06-22 2013-03-29 Soitec Silicon On Insulator Technologies Appareil de fabrication de dispositifs semi-conducteurs
JP2012079818A (ja) * 2010-09-30 2012-04-19 Nikon Corp 基板貼り合せ装置、加熱装置、積層半導体装置の製造方法及び積層半導体装置
JP6012017B2 (ja) * 2011-01-24 2016-10-25 ボンドテック株式会社 加圧装置および加圧方法
JP5791329B2 (ja) * 2011-03-31 2015-10-07 大陽日酸株式会社 気相成長装置
JP5490065B2 (ja) * 2011-08-09 2014-05-14 三菱重工業株式会社 接合装置および接合システム
JP6045972B2 (ja) * 2013-04-25 2016-12-14 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
US20150118012A1 (en) * 2013-10-31 2015-04-30 Lam Research Corporation Wafer entry port with gas concentration attenuators
US9136243B2 (en) * 2013-12-03 2015-09-15 Kulicke And Soffa Industries, Inc. Systems and methods for determining and adjusting a level of parallelism related to bonding of semiconductor elements
JP6125443B2 (ja) * 2014-01-17 2017-05-10 三菱重工工作機械株式会社 常温接合装置
JP6275632B2 (ja) * 2014-12-24 2018-02-07 三菱重工工作機械株式会社 常温接合装置及び常温接合方法
CN107665847B (zh) * 2016-07-29 2020-01-24 上海微电子装备（集团）股份有限公司 一种键合对准设备和方法
WO2020226093A1 (fr) * 2019-05-08 2020-11-12 東京エレクトロン株式会社 Dispositif, système et procédé de liaison

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661661A (en) * 1967-06-05 1972-05-09 Robertshaw Controls Co Sonic welding apparatus having universal aligning means
GB1239233A (fr) * 1968-10-23 1971-07-14
JPS6176242A (ja) 1984-09-21 1986-04-18 Kanetsuu Kogyo Kk 磁極板
JPS63129319A (ja) 1986-11-20 1988-06-01 Canon Inc 貼り合せズレ補正装置
US5112153A (en) * 1990-07-17 1992-05-12 Maremont Corporation End connector assembly with ball held captive in socket bearing and shell housing and method of assembly
US5237267A (en) 1992-05-29 1993-08-17 Cascade Microtech, Inc. Wafer probe station having auxiliary chucks
JPH0898076A (ja) 1994-09-28 1996-04-12 Canon Inc 画像入力装置
US6670985B2 (en) * 1994-09-28 2003-12-30 Canon Kabushiki Kaisha Image sensing apparatus including a card device connectable to an information processing device
JPH08273247A (ja) * 1995-03-27 1996-10-18 Sony Corp 記録装置
JPH09213772A (ja) * 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
JP2791429B2 (ja) 1996-09-18 1998-08-27 工業技術院長 シリコンウェハーの常温接合法
JP3483452B2 (ja) 1998-02-04 2004-01-06 キヤノン株式会社 ステージ装置および露光装置、ならびにデバイス製造方法
JP3301387B2 (ja) 1998-07-09 2002-07-15 ウシオ電機株式会社 プロキシミティ露光におけるマスクとワークのギャップ制御方法およびプロキシミティ露光装置
JP3558936B2 (ja) 1999-11-10 2004-08-25 日本電信電話株式会社 薄膜形成装置
JP3601401B2 (ja) 2000-02-17 2004-12-15 松下電器産業株式会社 電子部品のボンディング装置
JP4377035B2 (ja) 2000-06-08 2009-12-02 唯知 須賀 実装方法および装置
JP4822577B2 (ja) * 2000-08-18 2011-11-24 東レエンジニアリング株式会社 実装方法および装置
JP2003318219A (ja) 2002-02-22 2003-11-07 Toray Eng Co Ltd 実装方法および装置
JP2006134899A (ja) * 2002-11-28 2006-05-25 Toray Eng Co Ltd 接合方法および装置
KR100875465B1 (ko) * 2002-12-10 2008-12-22 삼성전자주식회사 편광판 부착 설비
JP2004207644A (ja) 2002-12-26 2004-07-22 Toto Ltd 静電チャック及びこれを用いた貼合わせ基板製造装置
JP4245138B2 (ja) * 2003-03-11 2009-03-25 富士通株式会社 基板貼合せ装置及び基板貼合せ方法
WO2005054147A1 (fr) * 2003-12-02 2005-06-16 Bondtech Inc. Procede de liaison, dispositif fabrique au moyen de ce procede, et dispositif de liaison
JP2005191556A (ja) 2003-12-02 2005-07-14 Bondotekku:Kk ガス封入金接合方法及び装置
JP4686377B2 (ja) 2004-01-22 2011-05-25 ボンドテック株式会社 接合方法および接合装置
US7784670B2 (en) * 2004-01-22 2010-08-31 Bondtech Inc. Joining method and device produced by this method and joining unit
JP4919604B2 (ja) 2004-02-16 2012-04-18 ボンドテック株式会社 接合方法及び接合装置
JP2005288673A (ja) 2004-04-06 2005-10-20 Mitsubishi Heavy Ind Ltd 微小構造体の製造装置
KR100743577B1 (ko) * 2004-09-07 2007-07-30 주식회사 썬 프레인 코 가스스프링의 볼조인트 체결 구조
JP4102884B2 (ja) 2005-05-13 2008-06-18 東京エレクトロン株式会社 プローブカードの調整機構及びプローブ装置
JP4669766B2 (ja) 2005-09-29 2011-04-13 ボンドテック株式会社 位置決め方法、この方法を用いた加圧方法および位置決め装置、この装置を備える加圧装置
JP4941307B2 (ja) 2005-12-12 2012-05-30 株式会社村田製作所 位置合わせ装置、接合装置及び位置合わせ方法
JP3970304B1 (ja) * 2006-03-27 2007-09-05 三菱重工業株式会社 常温接合装置
JP4209457B1 (ja) 2008-02-29 2009-01-14 三菱重工業株式会社 常温接合装置

Also Published As

Publication number Publication date
KR101163325B1 (ko) 2012-07-05
WO2009107250A1 (fr) 2009-09-03
US20110011536A1 (en) 2011-01-20
JP4209457B1 (ja) 2009-01-14
US20120285624A1 (en) 2012-11-15
EP2249377B1 (fr) 2014-05-28
TWI407516B (zh) 2013-09-01
KR20100120174A (ko) 2010-11-12
EP2249377A1 (fr) 2010-11-10
JP2009208084A (ja) 2009-09-17
CN101960557B (zh) 2012-08-29
US9005390B2 (en) 2015-04-14
US8857487B2 (en) 2014-10-14
TW200937543A (en) 2009-09-01
CN101960557A (zh) 2011-01-26
CA2717076C (fr) 2015-05-19
EP2249377A4 (fr) 2012-11-14

Similar Documents

Publication Publication Date Title
EP2249377B1 (fr) Dispositif d'assemblage a froid
US7645681B2 (en) Bonding method, device produced by this method, and bonding device
JP3107780B2 (ja) 半導体製造用エッチング装置
JP3970304B1 (ja) 常温接合装置
WO2011151996A1 (fr) Dispositif et procédé de traitement par plasma
JPH0774228A (ja) 処理工程でサンプルを逆転するための方法並びに装置
US20070110917A1 (en) Bonding method, device formed by such method, surface activating unit and bonding apparatus comprising such unit
JP2005294800A (ja) 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP2021528870A (ja) 共有接合半導体インターフェース
JP4859895B2 (ja) 常温接合装置
JP2019024081A (ja) アラインされた基板ペアを扱うシステムと関連技術
JP5438734B2 (ja) 接合方法
JP4875678B2 (ja) 常温接合装置
TWI423374B (zh) 常溫接合裝置
JP4875676B2 (ja) 常温接合装置
JP4875677B2 (ja) 常温接合装置
JP5851099B2 (ja) 真空処理装置の運転方法
TWI423364B (zh) 晶圓接合裝置
TWM590156U (zh) 用於施加薄膜塗層的真空裝置
US20020051699A1 (en) Door system for a process chamber
KR20140050861A (ko) 기판처리장치
JP2011171684A (ja) 基板処理装置、積層半導体装置製造方法及び積層半導体装置

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed

Effective date: 20210311