CA2193098C - Preparation of semiconductor substrates - Google Patents

Preparation of semiconductor substrates Download PDF

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Publication number
CA2193098C
CA2193098C CA002193098A CA2193098A CA2193098C CA 2193098 C CA2193098 C CA 2193098C CA 002193098 A CA002193098 A CA 002193098A CA 2193098 A CA2193098 A CA 2193098A CA 2193098 C CA2193098 C CA 2193098C
Authority
CA
Canada
Prior art keywords
substrate
doped
buffer layer
iron
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002193098A
Other languages
English (en)
French (fr)
Other versions
CA2193098A1 (en
Inventor
Paul Charles Spurdens
Mark Andrew Salter
Michael John Harlow
David John Newson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of CA2193098A1 publication Critical patent/CA2193098A1/en
Application granted granted Critical
Publication of CA2193098C publication Critical patent/CA2193098C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
CA002193098A 1994-06-29 1995-06-29 Preparation of semiconductor substrates Expired - Fee Related CA2193098C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP94304754.8 1994-06-29
EP94304754 1994-06-29
PCT/GB1995/001541 WO1996000979A1 (en) 1994-06-29 1995-06-29 Preparation of semiconductor substrates

Publications (2)

Publication Number Publication Date
CA2193098A1 CA2193098A1 (en) 1996-01-11
CA2193098C true CA2193098C (en) 2001-02-20

Family

ID=8217756

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002193098A Expired - Fee Related CA2193098C (en) 1994-06-29 1995-06-29 Preparation of semiconductor substrates

Country Status (6)

Country Link
EP (1) EP0767969A1 (zh)
JP (1) JPH10504685A (zh)
KR (1) KR970704246A (zh)
CN (1) CN1092839C (zh)
CA (1) CA2193098C (zh)
WO (1) WO1996000979A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462361B1 (en) 1995-12-27 2002-10-08 Showa Denko K.K. GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
TW522574B (en) * 1999-09-28 2003-03-01 Showa Denko Kk GaInP epitaxial stacking structure, a GaInP epitaxial stacking structure for FETs and a fabrication method thereof
US6956237B2 (en) 2002-12-28 2005-10-18 Lg.Philips Lcd Co., Ltd. Thin film transistor array substrate and method for manufacturing the same
CN100364063C (zh) * 2004-06-21 2008-01-23 中国科学院半导体研究所 电化学腐蚀制备多孔磷化铟半导体材料的方法
CN106972058B (zh) * 2016-12-15 2020-02-11 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226796A (ja) * 1988-03-04 1989-09-11 Sumitomo Electric Ind Ltd インジウムリン基板の処理方法
CN1040401A (zh) * 1989-04-14 1990-03-14 吉林大学 砷化镓/磷化铟异质气相外延技术
JPH03161922A (ja) * 1989-11-20 1991-07-11 Nec Corp 異種基板上への３―５族化合物半導体のヘテロエピタキシャル成長法
CN1053146A (zh) * 1991-02-04 1991-07-17 中国科学院西安光学精密机械研究所 砷化镓衬底上的混合并质外延

Also Published As

Publication number Publication date
EP0767969A1 (en) 1997-04-16
KR970704246A (ko) 1997-08-09
WO1996000979A1 (en) 1996-01-11
CN1092839C (zh) 2002-10-16
CA2193098A1 (en) 1996-01-11
CN1155353A (zh) 1997-07-23
JPH10504685A (ja) 1998-05-06

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