CA2193098A1 - Preparation of Semiconductor Substrates - Google Patents
Preparation of Semiconductor SubstratesInfo
- Publication number
- CA2193098A1 CA2193098A1 CA2193098A CA2193098A CA2193098A1 CA 2193098 A1 CA2193098 A1 CA 2193098A1 CA 2193098 A CA2193098 A CA 2193098A CA 2193098 A CA2193098 A CA 2193098A CA 2193098 A1 CA2193098 A1 CA 2193098A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- preparation
- promote
- epitaxial layers
- subsequent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
An indium phosphide semiconductor substrate (10) is prepared for subsequent growth of epitaxial layers (12 to 16) to form a semiconductor device (5). In the preparation, the substrate (10) is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate (10) is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer (11) on the substrate to isolate the device epitaxial layers (12 to 16) from the substrate.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94304754 | 1994-06-29 | ||
EP94304754.8 | 1994-06-29 | ||
PCT/GB1995/001541 WO1996000979A1 (en) | 1994-06-29 | 1995-06-29 | Preparation of semiconductor substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2193098A1 true CA2193098A1 (en) | 1996-01-11 |
CA2193098C CA2193098C (en) | 2001-02-20 |
Family
ID=8217756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002193098A Expired - Fee Related CA2193098C (en) | 1994-06-29 | 1995-06-29 | Preparation of semiconductor substrates |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0767969A1 (en) |
JP (1) | JPH10504685A (en) |
KR (1) | KR970704246A (en) |
CN (1) | CN1092839C (en) |
CA (1) | CA2193098C (en) |
WO (1) | WO1996000979A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6462361B1 (en) | 1995-12-27 | 2002-10-08 | Showa Denko K.K. | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure |
TW522574B (en) * | 1999-09-28 | 2003-03-01 | Showa Denko Kk | GaInP epitaxial stacking structure, a GaInP epitaxial stacking structure for FETs and a fabrication method thereof |
US6956237B2 (en) | 2002-12-28 | 2005-10-18 | Lg.Philips Lcd Co., Ltd. | Thin film transistor array substrate and method for manufacturing the same |
CN100364063C (en) * | 2004-06-21 | 2008-01-23 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
CN106972058B (en) * | 2016-12-15 | 2020-02-11 | 苏州能讯高能半导体有限公司 | Semiconductor device and preparation method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226796A (en) * | 1988-03-04 | 1989-09-11 | Sumitomo Electric Ind Ltd | Treatment of indium-phosphorus substrate |
CN1040401A (en) * | 1989-04-14 | 1990-03-14 | 吉林大学 | The heterogeneous vapor phase epitaxy technique of gallium arsenide/indium phosphide |
JPH03161922A (en) * | 1989-11-20 | 1991-07-11 | Nec Corp | Hetero-epitaxial growth of group iii-v compound semiconductor on dissimilar substrate |
CN1053146A (en) * | 1991-02-04 | 1991-07-17 | 中国科学院西安光学精密机械研究所 | Hybrid and proton epitaxy on gallium arsenide substrate |
-
1995
- 1995-06-29 KR KR1019960707298A patent/KR970704246A/en not_active Application Discontinuation
- 1995-06-29 CA CA002193098A patent/CA2193098C/en not_active Expired - Fee Related
- 1995-06-29 CN CN95194628A patent/CN1092839C/en not_active Expired - Fee Related
- 1995-06-29 JP JP8502952A patent/JPH10504685A/en active Pending
- 1995-06-29 EP EP95923462A patent/EP0767969A1/en not_active Withdrawn
- 1995-06-29 WO PCT/GB1995/001541 patent/WO1996000979A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH10504685A (en) | 1998-05-06 |
WO1996000979A1 (en) | 1996-01-11 |
KR970704246A (en) | 1997-08-09 |
CN1155353A (en) | 1997-07-23 |
CA2193098C (en) | 2001-02-20 |
EP0767969A1 (en) | 1997-04-16 |
CN1092839C (en) | 2002-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |