EP0723039A3 - Compound semiconductor substrate and process of producing same - Google Patents
Compound semiconductor substrate and process of producing same Download PDFInfo
- Publication number
- EP0723039A3 EP0723039A3 EP96100695A EP96100695A EP0723039A3 EP 0723039 A3 EP0723039 A3 EP 0723039A3 EP 96100695 A EP96100695 A EP 96100695A EP 96100695 A EP96100695 A EP 96100695A EP 0723039 A3 EP0723039 A3 EP 0723039A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- compound semiconductor
- semiconductor layer
- single crystal
- silicon single
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 238000005259 measurement Methods 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24617/95 | 1995-01-19 | ||
JP2461795 | 1995-01-19 | ||
JP2461795 | 1995-01-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0723039A2 EP0723039A2 (en) | 1996-07-24 |
EP0723039A3 true EP0723039A3 (en) | 1999-06-09 |
Family
ID=12143116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96100695A Withdrawn EP0723039A3 (en) | 1995-01-19 | 1996-01-18 | Compound semiconductor substrate and process of producing same |
Country Status (2)
Country | Link |
---|---|
US (1) | US5833749A (en) |
EP (1) | EP0723039A3 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223419A (en) | 1998-06-30 | 2000-08-11 | Sony Corp | Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof |
US6204189B1 (en) | 1999-01-29 | 2001-03-20 | The Regents Of The University Of California | Fabrication of precision high quality facets on molecular beam epitaxy material |
JP2001127326A (en) * | 1999-08-13 | 2001-05-11 | Oki Electric Ind Co Ltd | Semiconductor substrate, method of manufacturing the same, solar cell using the same and manufacturing method thereof |
US6657194B2 (en) * | 2001-04-13 | 2003-12-02 | Epir Technologies, Inc. | Multispectral monolithic infrared focal plane array detectors |
JP4567251B2 (en) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | Silicon semiconductor substrate and manufacturing method thereof |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
JP2004296496A (en) * | 2003-03-25 | 2004-10-21 | Fujitsu Ltd | Method of manufacturing semiconductor device |
US7187059B2 (en) * | 2004-06-24 | 2007-03-06 | International Business Machines Corporation | Compressive SiGe <110> growth and structure of MOSFET devices |
KR20180022998A (en) * | 2015-07-03 | 2018-03-06 | 어플라이드 머티어리얼스, 인코포레이티드 | Semiconductor device |
CN112382561A (en) * | 2020-11-11 | 2021-02-19 | 苏州镓港半导体有限公司 | Method for removing oxide layer on surface of monocrystalline silicon at low temperature |
KR20230081463A (en) * | 2021-11-30 | 2023-06-07 | 삼성전자주식회사 | Substrate for optical device and method of manufacturing the same, optical device including substrate for optical device and manufacturing the same and electronic apparatus including optical device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3334236A1 (en) * | 1983-09-22 | 1985-04-04 | Telefunken electronic GmbH, 7100 Heilbronn | Semiconductor device composed of compound semiconductor material |
EP0214610A2 (en) * | 1985-09-03 | 1987-03-18 | Daido Tokushuko Kabushiki Kaisha | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
EP0232082A2 (en) * | 1986-01-24 | 1987-08-12 | University of Illinois | Semiconductor deposition method and device |
EP0449229A2 (en) * | 1990-03-28 | 1991-10-02 | Hitachi, Ltd. | Semiconductor device using a particular orientation of crystalline planes |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
UST951008I4 (en) * | 1975-11-07 | 1976-10-05 | ||
US4120706A (en) * | 1977-09-16 | 1978-10-17 | Harris Corporation | Heteroepitaxial deposition of gap on silicon substrates |
JPH0236059B2 (en) * | 1984-07-16 | 1990-08-15 | Kogyo Gijutsuin | KAGOBUTSU HANDOTAINOSEICHOHOHO |
JPH0236060B2 (en) * | 1984-09-14 | 1990-08-15 | Kogyo Gijutsuin | KAGOBUTSU HANDOTAINOSEICHOHOHO |
JPS6258614A (en) * | 1985-09-03 | 1987-03-14 | Daido Steel Co Ltd | Arsenide galium epitaxial wafer and manufacture thereof |
JPS6258690A (en) * | 1985-09-04 | 1987-03-14 | Daido Steel Co Ltd | Light emitting element of gallium arsenide semiconductor |
JPH01207920A (en) * | 1988-02-16 | 1989-08-21 | Oki Electric Ind Co Ltd | Manufacture of inp semiconductor thin film |
US5289721A (en) * | 1990-09-10 | 1994-03-01 | Nippondenso Co., Ltd. | Semiconductor pressure sensor |
JPH05166724A (en) * | 1991-12-19 | 1993-07-02 | Fujitsu Ltd | Silicon substrate compound semiconductor device and its manufacture |
JP3263964B2 (en) * | 1992-01-31 | 2002-03-11 | 富士通株式会社 | Crystal for forming semiconductor device and manufacturing method thereof |
JP3184909B2 (en) * | 1992-08-07 | 2001-07-09 | アサヒ装設株式会社 | Fryer tempura fryer |
JPH06244122A (en) * | 1992-12-21 | 1994-09-02 | Nippon Steel Corp | Method of growing compound semiconductor on silicon substrate |
-
1996
- 1996-01-16 US US08/585,505 patent/US5833749A/en not_active Expired - Fee Related
- 1996-01-18 EP EP96100695A patent/EP0723039A3/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3334236A1 (en) * | 1983-09-22 | 1985-04-04 | Telefunken electronic GmbH, 7100 Heilbronn | Semiconductor device composed of compound semiconductor material |
EP0214610A2 (en) * | 1985-09-03 | 1987-03-18 | Daido Tokushuko Kabushiki Kaisha | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
EP0232082A2 (en) * | 1986-01-24 | 1987-08-12 | University of Illinois | Semiconductor deposition method and device |
EP0449229A2 (en) * | 1990-03-28 | 1991-10-02 | Hitachi, Ltd. | Semiconductor device using a particular orientation of crystalline planes |
Also Published As
Publication number | Publication date |
---|---|
EP0723039A2 (en) | 1996-07-24 |
US5833749A (en) | 1998-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19960216 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB |
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RIC1 | Information provided on ipc code assigned before grant |
Free format text: 6C 30B 25/18 A, 6H 01L 21/33 B, 6H 01L 29/04 B, 6H 01L 29/10 B |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19991210 |