EP0723039A3 - Compound semiconductor substrate and process of producing same - Google Patents

Compound semiconductor substrate and process of producing same Download PDF

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Publication number
EP0723039A3
EP0723039A3 EP96100695A EP96100695A EP0723039A3 EP 0723039 A3 EP0723039 A3 EP 0723039A3 EP 96100695 A EP96100695 A EP 96100695A EP 96100695 A EP96100695 A EP 96100695A EP 0723039 A3 EP0723039 A3 EP 0723039A3
Authority
EP
European Patent Office
Prior art keywords
compound semiconductor
semiconductor layer
single crystal
silicon single
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96100695A
Other languages
German (de)
French (fr)
Other versions
EP0723039A2 (en
Inventor
Akihiro c/o Nippon Steel Corp. Tech. Moritani
Aiji c/o Nippon Steel Corp. Tech. Yabe
Akiyoshi c/o Nippon Steel Corp. Tech. Tachikawa
Takashi c/o Nippon Steel Corp. Tech. Aigo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of EP0723039A2 publication Critical patent/EP0723039A2/en
Publication of EP0723039A3 publication Critical patent/EP0723039A3/en
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A compound semiconductor substrate (1) having at least one compound semiconductor layer (11) epitaxially grown on a silicon single crystal substrate (10), wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxially grown, the surface being inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; and the compound semiconductor layer has a free or top surface having a roughness of 3 nm or less in terms of a mean square roughness, Rms, determined by an atomic force microscopic measurement in a view field area of 10 µm × 10 µm or a roughness of 10.5 nm or less in terms of a maximum height difference, Ry.
The compound semiconductor substrate is produced by a process comprising the steps of: preparing a silicon single crystal substrate having a surface inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; forming a buffer layer of a first compound semiconductor layer having a thickness of 5 nm to 15 nm on the surface of the silicon single crystal substrate; and epitaxially growing a second compound semiconductor layer on the buffer layer.
EP96100695A 1995-01-19 1996-01-18 Compound semiconductor substrate and process of producing same Withdrawn EP0723039A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24617/95 1995-01-19
JP2461795 1995-01-19
JP2461795 1995-01-19

Publications (2)

Publication Number Publication Date
EP0723039A2 EP0723039A2 (en) 1996-07-24
EP0723039A3 true EP0723039A3 (en) 1999-06-09

Family

ID=12143116

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96100695A Withdrawn EP0723039A3 (en) 1995-01-19 1996-01-18 Compound semiconductor substrate and process of producing same

Country Status (2)

Country Link
US (1) US5833749A (en)
EP (1) EP0723039A3 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223419A (en) * 1998-06-30 2000-08-11 Sony Corp Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof
US6204189B1 (en) 1999-01-29 2001-03-20 The Regents Of The University Of California Fabrication of precision high quality facets on molecular beam epitaxy material
JP2001127326A (en) * 1999-08-13 2001-05-11 Oki Electric Ind Co Ltd Semiconductor substrate, method of manufacturing the same, solar cell using the same and manufacturing method thereof
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
JP4567251B2 (en) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 Silicon semiconductor substrate and manufacturing method thereof
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
JP2004296496A (en) * 2003-03-25 2004-10-21 Fujitsu Ltd Method of manufacturing semiconductor device
US7187059B2 (en) * 2004-06-24 2007-03-06 International Business Machines Corporation Compressive SiGe <110> growth and structure of MOSFET devices
WO2017006148A1 (en) * 2015-07-03 2017-01-12 Applied Materials, Inc. Semiconductor device
CN112382561A (en) * 2020-11-11 2021-02-19 苏州镓港半导体有限公司 Method for removing oxide layer on surface of monocrystalline silicon at low temperature
KR20230081463A (en) * 2021-11-30 2023-06-07 삼성전자주식회사 Substrate for optical device and method of manufacturing the same, optical device including substrate for optical device and manufacturing the same and electronic apparatus including optical device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3334236A1 (en) * 1983-09-22 1985-04-04 Telefunken electronic GmbH, 7100 Heilbronn Semiconductor device composed of compound semiconductor material
EP0214610A2 (en) * 1985-09-03 1987-03-18 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same
EP0232082A2 (en) * 1986-01-24 1987-08-12 University of Illinois Semiconductor deposition method and device
EP0449229A2 (en) * 1990-03-28 1991-10-02 Hitachi, Ltd. Semiconductor device using a particular orientation of crystalline planes

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
UST951008I4 (en) * 1975-11-07 1976-10-05
US4120706A (en) * 1977-09-16 1978-10-17 Harris Corporation Heteroepitaxial deposition of gap on silicon substrates
JPH0236059B2 (en) * 1984-07-16 1990-08-15 Kogyo Gijutsuin KAGOBUTSU HANDOTAINOSEICHOHOHO
JPH0236060B2 (en) * 1984-09-14 1990-08-15 Kogyo Gijutsuin KAGOBUTSU HANDOTAINOSEICHOHOHO
JPS6258614A (en) * 1985-09-03 1987-03-14 Daido Steel Co Ltd Arsenide galium epitaxial wafer and manufacture thereof
JPS6258690A (en) * 1985-09-04 1987-03-14 Daido Steel Co Ltd Light emitting element of gallium arsenide semiconductor
JPH01207920A (en) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd Manufacture of inp semiconductor thin film
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
JPH05166724A (en) * 1991-12-19 1993-07-02 Fujitsu Ltd Silicon substrate compound semiconductor device and its manufacture
JP3263964B2 (en) * 1992-01-31 2002-03-11 富士通株式会社 Crystal for forming semiconductor device and manufacturing method thereof
JP3184909B2 (en) * 1992-08-07 2001-07-09 アサヒ装設株式会社 Fryer tempura fryer
JPH06244122A (en) * 1992-12-21 1994-09-02 Nippon Steel Corp Method of growing compound semiconductor on silicon substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3334236A1 (en) * 1983-09-22 1985-04-04 Telefunken electronic GmbH, 7100 Heilbronn Semiconductor device composed of compound semiconductor material
EP0214610A2 (en) * 1985-09-03 1987-03-18 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same
EP0232082A2 (en) * 1986-01-24 1987-08-12 University of Illinois Semiconductor deposition method and device
EP0449229A2 (en) * 1990-03-28 1991-10-02 Hitachi, Ltd. Semiconductor device using a particular orientation of crystalline planes

Also Published As

Publication number Publication date
EP0723039A2 (en) 1996-07-24
US5833749A (en) 1998-11-10

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