CA2193098A1 - Preparation de substrats semi-conducteurs - Google Patents
Preparation de substrats semi-conducteursInfo
- Publication number
- CA2193098A1 CA2193098A1 CA2193098A CA2193098A CA2193098A1 CA 2193098 A1 CA2193098 A1 CA 2193098A1 CA 2193098 A CA2193098 A CA 2193098A CA 2193098 A CA2193098 A CA 2193098A CA 2193098 A1 CA2193098 A1 CA 2193098A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- preparation
- promote
- epitaxial layers
- subsequent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94304754 | 1994-06-29 | ||
EP94304754.8 | 1994-06-29 | ||
PCT/GB1995/001541 WO1996000979A1 (fr) | 1994-06-29 | 1995-06-29 | Preparation de substrats semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2193098A1 true CA2193098A1 (fr) | 1996-01-11 |
CA2193098C CA2193098C (fr) | 2001-02-20 |
Family
ID=8217756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002193098A Expired - Fee Related CA2193098C (fr) | 1994-06-29 | 1995-06-29 | Preparation de substrats semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0767969A1 (fr) |
JP (1) | JPH10504685A (fr) |
KR (1) | KR970704246A (fr) |
CN (1) | CN1092839C (fr) |
CA (1) | CA2193098C (fr) |
WO (1) | WO1996000979A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6462361B1 (en) | 1995-12-27 | 2002-10-08 | Showa Denko K.K. | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure |
TW522574B (en) * | 1999-09-28 | 2003-03-01 | Showa Denko Kk | GaInP epitaxial stacking structure, a GaInP epitaxial stacking structure for FETs and a fabrication method thereof |
US6956237B2 (en) | 2002-12-28 | 2005-10-18 | Lg.Philips Lcd Co., Ltd. | Thin film transistor array substrate and method for manufacturing the same |
CN100364063C (zh) * | 2004-06-21 | 2008-01-23 | 中国科学院半导体研究所 | 电化学腐蚀制备多孔磷化铟半导体材料的方法 |
CN106972058B (zh) * | 2016-12-15 | 2020-02-11 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226796A (ja) * | 1988-03-04 | 1989-09-11 | Sumitomo Electric Ind Ltd | インジウムリン基板の処理方法 |
CN1040401A (zh) * | 1989-04-14 | 1990-03-14 | 吉林大学 | 砷化镓/磷化铟异质气相外延技术 |
JPH03161922A (ja) * | 1989-11-20 | 1991-07-11 | Nec Corp | 異種基板上への3―5族化合物半導体のヘテロエピタキシャル成長法 |
CN1053146A (zh) * | 1991-02-04 | 1991-07-17 | 中国科学院西安光学精密机械研究所 | 砷化镓衬底上的混合并质外延 |
-
1995
- 1995-06-29 KR KR1019960707298A patent/KR970704246A/ko not_active Application Discontinuation
- 1995-06-29 CA CA002193098A patent/CA2193098C/fr not_active Expired - Fee Related
- 1995-06-29 CN CN95194628A patent/CN1092839C/zh not_active Expired - Fee Related
- 1995-06-29 JP JP8502952A patent/JPH10504685A/ja active Pending
- 1995-06-29 EP EP95923462A patent/EP0767969A1/fr not_active Withdrawn
- 1995-06-29 WO PCT/GB1995/001541 patent/WO1996000979A1/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH10504685A (ja) | 1998-05-06 |
WO1996000979A1 (fr) | 1996-01-11 |
KR970704246A (ko) | 1997-08-09 |
CN1155353A (zh) | 1997-07-23 |
CA2193098C (fr) | 2001-02-20 |
EP0767969A1 (fr) | 1997-04-16 |
CN1092839C (zh) | 2002-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0301463A3 (fr) | Dispositif semi-conducteur à film mince en silicium et procédé pour le fabriquer | |
CA2075020A1 (fr) | Methode de preparation d'elements semiconducteurs | |
AU7992900A (en) | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates | |
EP0993048A3 (fr) | Dispositif à semi-conducteur de nitrure et son procédé de fabrication | |
EP0352471A3 (fr) | Procédé de planariser de dispositifs semiconducteurs | |
CA2107174A1 (fr) | Oxyde de magnesium epitaxial utilise comme couche tampon sur des semiconducteurs tetrahedraux | |
WO2005034208A3 (fr) | Procede permettant de reduire des sites de nucleation des defauts d'empilement et une derive de vf dans des dispositifs bipolaires | |
EP0955681A3 (fr) | Dispositif optique à semi-conducteur et méthode de fabrication | |
EP0969505A3 (fr) | Substrate de type SOI | |
EP0392480A3 (fr) | Méthode de fabrication d'un circuit intégré à semi-conducteur | |
WO2003094218A3 (fr) | Oxyde monocristallin pourvu d'un composant a semiconducteur | |
EP0866493A3 (fr) | Substrat semiconducteur ayant une couche d'un couche d'un semiconducteur composé, son procédé de fabrication et dispositif électronique realisé sur un tel substrat sémiconducteur | |
EP0826801A3 (fr) | Fabrication de substrates de silicium | |
CA2015891A1 (fr) | Methode de fabrication d'elements isolants d'epaisseur variable | |
CA2193098A1 (fr) | Preparation de substrats semi-conducteurs | |
EP0749154A3 (fr) | Procédé de fabrication d'une couche d'un composé semi-conducteur III-V | |
EP0723039A3 (fr) | Substrat de semi-conducteur du type composé et procédé pour sa préparation | |
CA2135500A1 (fr) | Methode pour former un gradin sur la surface de depot d'un substrat pour obtenir un dispositif supraconducteur utilisant un supraconducteur d'oxyde | |
WO2002045140A3 (fr) | Structures semi-conductrices a substrat flexible | |
EP1233445A3 (fr) | Procédé de fabricaiton d'un composant semi-conducteur | |
EP0631299A4 (fr) | Substrat epitaxial semiconducteur. | |
WO2002080228A3 (fr) | Structure contenant des pellicules de nitrure de bore cubique | |
WO2002054467A3 (fr) | Structure de semi-conducteur comprenant une couche conductrice monocristalline | |
EP0734079A3 (fr) | Méthode de croissance en phase vapeur | |
TW200509224A (en) | Surface processing method, manufacturing method of silicon epitaxy wafer and silicon epitaxy wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |