JP4095066B2 - 窒化ガリウムベース半導体の半導体構造 - Google Patents
窒化ガリウムベース半導体の半導体構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 178
- 229910002601 GaN Inorganic materials 0.000 title claims description 75
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 58
- 150000004767 nitrides Chemical class 0.000 claims description 124
- 239000000758 substrate Substances 0.000 claims description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 59
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 230000006911 nucleation Effects 0.000 claims description 32
- 238000010899 nucleation Methods 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 176
- 239000000463 material Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 26
- 239000013078 crystal Substances 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 238000000151 deposition Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
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- 239000000969 carrier Substances 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- -1 aluminum compound Chemical class 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
本発明の関連態様は、シリコン基板と、基板の上に直接重なるアルミニウムの層と、アルミニウム層の上に直接重なる窒化物半導体の核生成層とを、核生成層の上に重なる1つ又はそれ以上の超格子を含むバッファ構造及びバッファ構造の上に重なる1つ又はそれ以上の窒化ガリウムベース半導体を含む作動構造と共に組み込んだ半導体構造を提供する。
本発明のこれらの態様は、シリコン基板に付随する電気的性能の限界は、成長後に基板を除去し、一般的にエピタキシャル成長には適さないと思われる異なるベース材料で置換することにより容易に解決することができるという認識を導入したものである。
窒化物半導体の層は、GaN又は別の窒化ガリウムベース半導体を含むことができる。シリコン基板と窒化物半導体の第1の層との間に、窒化物半導体の更なる層を配置することができ、窒化物半導体のこの更なる層は、窒化物半導体の第1の層よりも高いドーピング濃度を有することができる。この更なる層は、GaN又は別の窒化ガリウムベース半導体を含むこともできる。窒化物半導体の第1の層及び第1の金属層は、窒化物半導体の層の幅全体に亘って覆うことができる。代替的に、窒化物半導体の第1の層及び第1の金属層は、シリコン基板の一部分を覆う。
窒化物半導体の層は、GaN又は別の窒化ガリウムベース半導体を含むことができる。窒化物半導体の更なる層は、窒化物半導体の第1の層の形成前に形成してもよく、窒化物半導体の第1の層よりも高いドーピング濃度を有する。この更なる層は、GaN又は別の窒化ガリウムベース半導体を含むこともできる。窒化物半導体の第1の層に一部分は、窒化物半導体の層がメサ構造を形成するように除去することができる。
本発明の上記及び他の目的、特徴、及び利点は、添付図面と共に以下に示す好ましい実施形態の詳細説明から容易に更に明らかになるであろう。
第1の超格子18の堆積に続いて、有機ガリウム化合物、アンモニア、及び同伴ガスの混合物に基板を約950から約1100℃の温度で露出することにより、窒化ガリウムベース半導体、最も好ましくはGaNの薄い中間層24が堆積される。層24の厚さは、最も好ましくは、約200から約400ナノメートルである。
高品質化学蒸着に使用される従来の技術が次に行われるべきである。任意選択的に、例えば、アルミニウム層14とバッファ層16の堆積の間のような異なる組成を有する各層の堆積の間、及び、各超格子の堆積の前及び後の両方に、チャンバは、先行する層からの金属を水素又は窒素の同伴ガスとアンモニアとの混合物で長期間洗浄することにより取り除くことができる。
しかし、より好ましくは、基板10は除去される。本発明の更に別の実施形態(図3)による処理では、シリコン基板10と図1及び2に関して上述の窒化物構造と同じか又は異なっていてもよい窒化物構造36とを組み込んだ半導体構造は、一時的な担体42と係合し、それによって窒化物構造の上面38は、担体を支持し、窒化物構造の上面はまた、好ましくは上部窒化物層及び担体間の接着を促進する誘電性「接着剤」を用いることにより担体に結合される。この誘電体は、例えば、ベンゾシクロブタン(BCB)、メチルシルセスキオキサン(MSSQ)、又は、「Flare(登録商標)」、「SiLK(登録商標)」、「Parylene−N」、及び「PETI 5」という商品名の下で販売されているもののような材料とすることができる。窒化物構造、担体、又はその両方の表面は、接着剤でコーティングされ、次に、それらの表面は、400℃よりも低い比較的低い温度の下で接触した状態にされる。その後の処理段階が100℃を超えて行われる必要がない場合、「HMDS」又はフォトレジストのような他のポリマーを使用することができる。更に、アセトンのような溶剤がその後の処理段階にない場合、ワックス又は「Crystalbond(登録商標)」のような可溶性接着剤を使用することもできる。
図3及び4に関して上述した方法により作製された完成素子は、窒化物構造のエピタキシャル成長に使用されたシリコン基板が完成素子に存在しないので、優れた電気特性をもたらすことができる。例えばサファイアウェーハのような比較的高価な材料が一時的担体として使用されるが、これらは、リサイクルして再使用することができ、完成素子のどの部分も形成しない。
素子の底部には、薄いオーム金属接触層316がシリコン基板302の背面に形成され、別の金属スタック318が、オーム金属層316の上に堆積される。任意選択の保護層314は、ショットキー接触金属層310及び厚い金属層312の全て又は一部の上に形成することができる。
上記及び他の変形及び組合せを使用することができるので、好ましい実施形態の以上の説明は、特許請求の範囲で規定された本発明を制限するのではなく、例証的なものとして考えるべきである。
14 アルミニウムの単層
16 核生成層
18、26 多重超格子
24 中間層
32 バッファ構造
34 窒化物半導体
Claims (13)
- (a)シリコン基板と、
(b)該基板の上に直接重なるアルミニウムの層と、
(c)該アルミニウムの層の上に直接重なる窒化物半導体の多結晶核生成層と、
(d)該核生成層の直ぐ上にある第1の超格子と、該第1の超格子の上にある窒化物ベース半導体の中間層と、該中間層の上にあって複数の窒化物ベース半導体を含んだ第2の超格子と、を含むバッファ構造と、
を具備し、
前記第1の超格子が、異なった組成を有する複数の窒化物ベース半導体であって各々が式AlrGa(1-r)N(0<r<1)に従った組成を有する複数の窒化物ベース半導体を含み、
前記第2の超格子が、各々が式AlrGa(1-r)N(0<r<1)に従った組成を有する複数の半導体により本質的に構成されており、
さらに、
(e)前記バッファ構造の上にある1又はそれ以上の窒化ガリウムベース半導体の作動構造と、
を具備することを特徴とする半導体構造。 - 前記核生成層が、本質的に窒化アルミニウムにより構成されており、
前記第1の超格子が、本質的に、式AlrGa(1-r)N(0<r<1)に従った半導体により構成されている、請求項1に記載の半導体構造。 - 前記第1の超格子及び前記第2の超格子の各々が、異なるr値を有する2つの半導体のみにより構成されている、請求項1に記載の半導体構造。
- 前記第1の超格子に含まれた半導体が前記第2の超格子に含まれた半導体と同一である、請求項3に記載の半導体構造。
- 前記作動構造が、窒化物半導体の第1の層を含み、
該作動構造が、さらに、前記窒化物半導体の前記第1の層の上にあって該第1の層に対するショットキー接触を形成する少なくとも1つの第1の金属層を具備する、請求項1に記載の半導体構造。 - 前記窒化物半導体の前記第1の層が窒化ガリウムベース半導体を含む、請求項5に記載の半導体構造。
- 前記窒化物半導体の前記第1の層がGaNを含む、請求項5に記載の半導体構造。
- さらに、前記シリコン基板の別の表面の上にあって該基板に対するオーミック接触を形成する少なくとも1つの更なる金属層を具備する、請求項5に記載の半導体構造。
- 前記作動構造が、前記窒化物半導体の前記第1の層と前記バッファ構造との間に配置された窒化物半導体の更なる層を含み、
前記窒化物半導体の更なる層が、前記窒化物半導体の前記第1の層よりも高いドーピング濃度を有する、請求項5に記載の半導体構造。 - 前記窒化物半導体の前記更なる層が窒化ガリウムベース半導体を含む、請求項9に記載の半導体構造。
- 前記窒化物半導体の前記更なる層がGaNを含む、請求項9に記載の半導体構造。
- 前記窒化物半導体の前記第1の層が前記バッファ構造の全幅を覆い、
前記第1の金属層が前記窒化物半導体の前記第1の層の全幅を覆う、請求項5に記載の半導体構造。 - 前記窒化物半導体の前記第1の層が前記バッファ構造の一部分を覆い、
前記第1の金属層が前記窒化物半導体の前記第1の層の全幅を覆う、請求項5に記載の半導体構造。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07231959A (ja) * | 1994-02-23 | 1995-09-05 | Torai Toentei One Kk | スタンド付きゴルフバッグ |
CN1034730C (zh) * | 1992-09-29 | 1997-04-30 | 南京师范大学 | 盐藻的收集与β-胡萝卜素的提取方法 |
Families Citing this family (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
US20070063185A1 (en) * | 2003-06-26 | 2007-03-22 | Rj Mears, Llc | Semiconductor device including a front side strained superlattice layer and a back side stress layer |
US20070063186A1 (en) * | 2003-06-26 | 2007-03-22 | Rj Mears, Llc | Method for making a semiconductor device including a front side strained superlattice layer and a back side stress layer |
TWI252599B (en) * | 2004-04-27 | 2006-04-01 | Showa Denko Kk | N-type group III nitride semiconductor layered structure |
US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
KR100670531B1 (ko) | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
EP1794813B1 (en) * | 2004-08-26 | 2015-05-20 | LG Innotek Co., Ltd. | Nitride semiconductor light emitting device and fabrication method thereof |
FR2875337A1 (fr) * | 2004-09-13 | 2006-03-17 | Picogiga Internat Soc Par Acti | Structures hemt piezoelectriques a desordre d'alliage nul |
FR2875338B1 (fr) * | 2004-09-13 | 2007-01-05 | Picogiga Internat Soc Par Acti | Methode d'elaboration de structures hemt piezoelectriques a desordre d'alliage nul |
CN100356595C (zh) * | 2004-09-27 | 2007-12-19 | 晶元光电股份有限公司 | Ⅲ族氮化物半导体元件及其制造方法 |
JP4826703B2 (ja) * | 2004-09-29 | 2011-11-30 | サンケン電気株式会社 | 半導体素子の形成に使用するための板状基体 |
US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
US20060175681A1 (en) * | 2005-02-08 | 2006-08-10 | Jing Li | Method to grow III-nitride materials using no buffer layer |
DE102005010821B4 (de) * | 2005-03-07 | 2007-01-25 | Technische Universität Berlin | Verfahren zum Herstellen eines Bauelements |
JP4563230B2 (ja) * | 2005-03-28 | 2010-10-13 | 昭和電工株式会社 | AlGaN基板の製造方法 |
US8674405B1 (en) * | 2005-04-13 | 2014-03-18 | Element Six Technologies Us Corporation | Gallium—nitride-on-diamond wafers and devices, and methods of manufacture |
US7595507B2 (en) * | 2005-04-13 | 2009-09-29 | Group4 Labs Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
US9157169B2 (en) * | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
US8026568B2 (en) | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
KR100661602B1 (ko) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | 수직 구조 질화갈륨계 led 소자의 제조방법 |
KR20070062686A (ko) * | 2005-12-13 | 2007-06-18 | 엘지이노텍 주식회사 | 질화물 반도체 발광 소자 및 제조 방법 |
JP4897285B2 (ja) * | 2005-12-14 | 2012-03-14 | 国立大学法人徳島大学 | 半導体装置用基材およびその製造方法 |
EP1842940A1 (en) * | 2006-04-06 | 2007-10-10 | Interuniversitair Microelektronica Centrum ( Imec) | Method for forming a group III nitride material on a silicon substrate |
KR100691635B1 (ko) * | 2006-06-13 | 2007-03-12 | 삼성전기주식회사 | 3족 질화물 반도체 성장용 기판 및 이를 이용한 수직구조led 소자 및 3족 질화물 반도체 성장용 기판의 제조방법 |
US8513643B2 (en) | 2006-09-06 | 2013-08-20 | Palo Alto Research Center Incorporated | Mixed alloy defect redirection region and devices including same |
US20080054248A1 (en) * | 2006-09-06 | 2008-03-06 | Chua Christopher L | Variable period variable composition supperlattice and devices including same |
JP5309451B2 (ja) * | 2007-02-19 | 2013-10-09 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子及び製造方法 |
JP5309452B2 (ja) * | 2007-02-28 | 2013-10-09 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子及び製造方法 |
US7939853B2 (en) * | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
DE102008030584A1 (de) | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
US8044409B2 (en) * | 2008-08-11 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-nitride based semiconductor structure with multiple conductive tunneling layer |
GB2467911B (en) * | 2009-02-16 | 2013-06-05 | Rfmd Uk Ltd | A semiconductor structure and a method of manufacture thereof |
JP5133927B2 (ja) * | 2009-03-26 | 2013-01-30 | コバレントマテリアル株式会社 | 化合物半導体基板 |
JP2010263189A (ja) * | 2009-04-07 | 2010-11-18 | Sharp Corp | 窒化物半導体発光ダイオード |
US8568529B2 (en) | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
WO2010124261A2 (en) * | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group iii depositions |
US8110889B2 (en) * | 2009-04-28 | 2012-02-07 | Applied Materials, Inc. | MOCVD single chamber split process for LED manufacturing |
JP2012525718A (ja) * | 2009-04-29 | 2012-10-22 | アプライド マテリアルズ インコーポレイテッド | HVPEにおいてその場プレ−GaN堆積層を形成する方法 |
US8405068B2 (en) | 2009-07-22 | 2013-03-26 | Rfmd (Uk) Limited | Reflecting light emitting structure and method of manufacture thereof |
EP2498282A4 (en) * | 2009-11-04 | 2014-06-25 | Dowa Electronics Materials Co | NITRIDE III SUBSTRATE WITH EPITAXIAL STRATIFICATION |
KR101105918B1 (ko) * | 2009-11-30 | 2012-01-17 | 주식회사 엘지실트론 | 질화물 반도체 소자의 제조방법 |
JP2013513944A (ja) * | 2009-12-11 | 2013-04-22 | ナショナル セミコンダクター コーポレーション | ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 |
WO2011102045A1 (ja) * | 2010-02-16 | 2011-08-25 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
JPWO2011122322A1 (ja) * | 2010-03-31 | 2013-07-08 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
JP5689245B2 (ja) | 2010-04-08 | 2015-03-25 | パナソニック株式会社 | 窒化物半導体素子 |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
EP2565906A4 (en) * | 2010-04-28 | 2013-12-04 | Ngk Insulators Ltd | EPITACTIC SUBSTRATE AND METHOD FOR PRODUCING THE EPITACTIC SUBSTRATE |
JP5596783B2 (ja) * | 2010-04-28 | 2014-09-24 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
CN102870196A (zh) | 2010-06-08 | 2013-01-09 | 日本碍子株式会社 | 外延基板以及外延基板的制造方法 |
JP5614130B2 (ja) * | 2010-06-30 | 2014-10-29 | 住友電気工業株式会社 | 半導体装置の製造方法 |
KR101692410B1 (ko) * | 2010-07-26 | 2017-01-03 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
JP5660373B2 (ja) * | 2010-10-29 | 2015-01-28 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子 |
JP5707903B2 (ja) * | 2010-12-02 | 2015-04-30 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US20120149176A1 (en) * | 2010-12-10 | 2012-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for forming a iii-v family layer |
TWI534291B (zh) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | 噴淋頭組件 |
US8400219B2 (en) | 2011-03-24 | 2013-03-19 | Suvolta, Inc. | Analog circuits having improved transistors, and methods therefor |
JP5911727B2 (ja) * | 2011-05-16 | 2016-04-27 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法 |
KR101855063B1 (ko) * | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 발광 소자 |
US8952395B2 (en) | 2011-07-26 | 2015-02-10 | Micron Technology, Inc. | Wafer-level solid state transducer packaging transducers including separators and associated systems and methods |
KR20130014861A (ko) * | 2011-08-01 | 2013-02-12 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
KR101853640B1 (ko) * | 2011-08-24 | 2018-06-20 | 엘지이노텍 주식회사 | 반도체 소자 |
US8497146B2 (en) | 2011-08-25 | 2013-07-30 | Micron Technology, Inc. | Vertical solid-state transducers having backside terminals and associated systems and methods |
JP5903818B2 (ja) * | 2011-09-26 | 2016-04-13 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
US8940620B2 (en) | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
CN105633234A (zh) * | 2012-03-15 | 2016-06-01 | 安徽三安光电有限公司 | 氮化镓基半导体生长衬底及其制作方法 |
JP6100047B2 (ja) * | 2012-03-26 | 2017-03-22 | 株式会社アルバック | 窒化ガリウム膜の形成方法、及び、窒化ガリウム膜の形成装置 |
US9136341B2 (en) | 2012-04-18 | 2015-09-15 | Rf Micro Devices, Inc. | High voltage field effect transistor finger terminations |
CN102664188B (zh) * | 2012-05-10 | 2014-07-23 | 电子科技大学 | 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管 |
KR20130137773A (ko) * | 2012-06-08 | 2013-12-18 | 엘지이노텍 주식회사 | 반도체 소자 |
KR20130139707A (ko) * | 2012-06-13 | 2013-12-23 | 삼성전자주식회사 | 반도체 소자 및 이에 사용되는 초격자층 |
US9124221B2 (en) | 2012-07-16 | 2015-09-01 | Rf Micro Devices, Inc. | Wide bandwidth radio frequency amplier having dual gate transistors |
US8946773B2 (en) | 2012-08-09 | 2015-02-03 | Samsung Electronics Co., Ltd. | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure |
US9202874B2 (en) | 2012-08-24 | 2015-12-01 | Rf Micro Devices, Inc. | Gallium nitride (GaN) device with leakage current-based over-voltage protection |
US8988097B2 (en) | 2012-08-24 | 2015-03-24 | Rf Micro Devices, Inc. | Method for on-wafer high voltage testing of semiconductor devices |
US9142620B2 (en) | 2012-08-24 | 2015-09-22 | Rf Micro Devices, Inc. | Power device packaging having backmetals couple the plurality of bond pads to the die backside |
US9147632B2 (en) | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
US9917080B2 (en) | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
US9129802B2 (en) | 2012-08-27 | 2015-09-08 | Rf Micro Devices, Inc. | Lateral semiconductor device with vertical breakdown region |
US9070761B2 (en) | 2012-08-27 | 2015-06-30 | Rf Micro Devices, Inc. | Field effect transistor (FET) having fingers with rippled edges |
KR102002898B1 (ko) * | 2012-09-04 | 2019-07-23 | 삼성전자 주식회사 | 반도체 버퍼 구조체 및 이를 포함하는 반도체 소자 |
JP6090899B2 (ja) * | 2012-09-06 | 2017-03-08 | パナソニック株式会社 | エピタキシャルウェハの製造方法 |
JP6120204B2 (ja) * | 2012-09-06 | 2017-04-26 | パナソニック株式会社 | エピタキシャルウェハ及びその製造方法、紫外発光デバイス |
US9583574B2 (en) | 2012-09-28 | 2017-02-28 | Intel Corporation | Epitaxial buffer layers for group III-N transistors on silicon substrates |
US9325281B2 (en) | 2012-10-30 | 2016-04-26 | Rf Micro Devices, Inc. | Power amplifier controller |
US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
US8981382B2 (en) * | 2013-03-06 | 2015-03-17 | Iqe Rf, Llc | Semiconductor structure including buffer with strain compensation layers |
KR20140133085A (ko) * | 2013-05-09 | 2014-11-19 | 엘지이노텍 주식회사 | 반도체 소자 및 그의 제조 방법 |
JP6385350B2 (ja) * | 2013-07-30 | 2018-09-05 | 住友化学株式会社 | 半導体基板および半導体基板の製造方法 |
EP3050130A4 (en) * | 2013-09-27 | 2017-03-01 | Intel Corporation | Forming led structures on silicon fins |
KR102137743B1 (ko) * | 2013-10-07 | 2020-07-24 | 엘지이노텍 주식회사 | 반도체 소자 |
KR102098250B1 (ko) | 2013-10-21 | 2020-04-08 | 삼성전자 주식회사 | 반도체 버퍼 구조체, 이를 포함하는 반도체 소자 및 반도체 버퍼 구조체를 이용한 반도체 소자 제조방법 |
KR102182016B1 (ko) * | 2013-12-02 | 2020-11-23 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 회로 |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
FR3028670B1 (fr) * | 2014-11-18 | 2017-12-22 | Commissariat Energie Atomique | Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales |
CN104393130B (zh) * | 2014-12-15 | 2017-04-12 | 聚灿光电科技股份有限公司 | 一种GaN基LED外延结构及其制备方法 |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10109736B2 (en) * | 2015-02-12 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Superlattice buffer structure for gallium nitride transistors |
TWI566430B (zh) | 2015-05-06 | 2017-01-11 | 嘉晶電子股份有限公司 | 氮化物半導體結構 |
KR102355604B1 (ko) * | 2015-07-03 | 2022-01-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 라이트 유닛 |
US11289593B2 (en) * | 2015-07-31 | 2022-03-29 | Infineon Technologies Austria Ag | Breakdown resistant HEMT substrate and device |
US9627473B2 (en) | 2015-09-08 | 2017-04-18 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation in III-nitride material semiconductor structures |
US9673281B2 (en) | 2015-09-08 | 2017-06-06 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions |
US9806182B2 (en) | 2015-09-08 | 2017-10-31 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using elemental diboride diffusion barrier regions |
US9799520B2 (en) | 2015-09-08 | 2017-10-24 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via back side implantation |
US10211294B2 (en) | 2015-09-08 | 2019-02-19 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising low atomic mass species |
US9704705B2 (en) | 2015-09-08 | 2017-07-11 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via reaction with active species |
US20170069721A1 (en) | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
US9773898B2 (en) | 2015-09-08 | 2017-09-26 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising spatially patterned implanted species |
US9806183B2 (en) * | 2015-11-30 | 2017-10-31 | Veeco Instruments, Inc. | Stress control on thin silicon substrates |
CN109075160B (zh) * | 2016-04-15 | 2022-12-30 | 苏州立琻半导体有限公司 | 发光器件、发光器件封装和发光模块 |
US10395965B2 (en) * | 2016-08-23 | 2019-08-27 | QROMIS, Inc. | Electronic power devices integrated with an engineered substrate |
US9917156B1 (en) | 2016-09-02 | 2018-03-13 | IQE, plc | Nucleation layer for growth of III-nitride structures |
US10720520B2 (en) | 2017-06-21 | 2020-07-21 | Infineon Technologies Austria Ag | Method of controlling wafer bow in a type III-V semiconductor device |
EP3451364B1 (en) * | 2017-08-28 | 2020-02-26 | Siltronic AG | Heteroepitaxial wafer and method for producing a heteroepitaxial wafer |
JP6512669B2 (ja) * | 2017-10-19 | 2019-05-15 | 国立大学法人 名古屋工業大学 | 半導体積層構造およびこれを用いた半導体素子 |
EP3503163A1 (en) | 2017-12-21 | 2019-06-26 | EpiGan NV | A method for forming a silicon carbide film onto a silicon substrate |
US10516076B2 (en) * | 2018-02-01 | 2019-12-24 | Silanna UV Technologies Pte Ltd | Dislocation filter for semiconductor devices |
US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
KR20210045835A (ko) | 2019-10-17 | 2021-04-27 | 삼성전자주식회사 | 반도체 박막 구조체 및 이를 포함하는 전자 소자 |
CN112750904B (zh) * | 2019-10-30 | 2024-01-02 | 联华电子股份有限公司 | 具有应力松弛层的半导体元件 |
US11749758B1 (en) | 2019-11-05 | 2023-09-05 | Semiq Incorporated | Silicon carbide junction barrier schottky diode with wave-shaped regions |
US11469333B1 (en) | 2020-02-19 | 2022-10-11 | Semiq Incorporated | Counter-doped silicon carbide Schottky barrier diode |
CN114883405A (zh) * | 2022-05-30 | 2022-08-09 | 湖南三安半导体有限责任公司 | 半导体外延结构、半导体器件及其制备方法 |
CN117293174A (zh) * | 2022-06-16 | 2023-12-26 | 华为技术有限公司 | 射频半导体器件、电子设备及射频半导体器件的制备方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51126761A (en) * | 1975-04-25 | 1976-11-05 | Sony Corp | Schottky barrier type semi-conductor unit |
US5027166A (en) | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
CA2008176A1 (en) | 1989-01-25 | 1990-07-25 | John W. Palmour | Silicon carbide schottky diode and method of making same |
JP2837700B2 (ja) * | 1989-08-23 | 1998-12-16 | ティーディーケイ株式会社 | ダイヤモンド様薄膜を形成する方法 |
JPH04302172A (ja) | 1991-03-29 | 1992-10-26 | Kobe Steel Ltd | ダイヤモンドショットキーダイオード |
CA2120610C (en) | 1992-08-07 | 1999-03-02 | Hideaki Imai | Nitride based semiconductor device and manufacture thereof |
US5622877A (en) | 1993-03-02 | 1997-04-22 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Method for making high-voltage high-speed gallium arsenide power Schottky diode |
DE69425186T3 (de) | 1993-04-28 | 2005-04-14 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
DE19715572A1 (de) * | 1997-04-15 | 1998-10-22 | Telefunken Microelectron | Verfahren zum Herstellen von epitaktischen Schichten eines Verbindungshalbleiters auf einkristallinem Silizium und daraus hergestellte Leuchtdiode |
US5956578A (en) | 1997-04-23 | 1999-09-21 | Motorola, Inc. | Method of fabricating vertical FET with Schottky diode |
TW420835B (en) | 1997-06-16 | 2001-02-01 | Matsushita Electric Ind Co Ltd | Semiconductor manufacture method and manufacturing device therefor |
US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
JP4412827B2 (ja) | 1999-08-20 | 2010-02-10 | シャープ株式会社 | 窒化物半導体厚膜基板 |
FR2803103B1 (fr) | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
US6586781B2 (en) | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
US6391748B1 (en) * | 2000-10-03 | 2002-05-21 | Texas Tech University | Method of epitaxial growth of high quality nitride layers on silicon substrates |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
TW488088B (en) * | 2001-01-19 | 2002-05-21 | South Epitaxy Corp | Light emitting diode structure |
US6437374B1 (en) | 2001-05-07 | 2002-08-20 | Xerox Corporation | Semiconductor device and method of forming a semiconductor device |
JP2002335009A (ja) * | 2001-05-08 | 2002-11-22 | Stanley Electric Co Ltd | 半導体装置の製造方法 |
US20030015708A1 (en) | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
US6524900B2 (en) | 2001-07-25 | 2003-02-25 | Abb Research, Ltd | Method concerning a junction barrier Schottky diode, such a diode and use thereof |
JP4064085B2 (ja) | 2001-10-18 | 2008-03-19 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2004014716A (ja) * | 2002-06-05 | 2004-01-15 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
US7825006B2 (en) * | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
US7332365B2 (en) * | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
US20070045638A1 (en) * | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
-
2003
- 2003-11-25 US US10/721,488 patent/US7115896B2/en not_active Expired - Lifetime
- 2003-12-02 CN CNA2003801004870A patent/CN1692499A/zh active Pending
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- 2003-12-02 DE DE10392313.6T patent/DE10392313B4/de not_active Expired - Fee Related
- 2003-12-02 JP JP2004557590A patent/JP4095066B2/ja not_active Expired - Fee Related
- 2003-12-02 EP EP03796650A patent/EP1568083A4/en not_active Withdrawn
- 2003-12-02 AU AU2003298891A patent/AU2003298891A1/en not_active Abandoned
- 2003-12-04 TW TW092134195A patent/TWI249246B/zh not_active IP Right Cessation
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1034730C (zh) * | 1992-09-29 | 1997-04-30 | 南京师范大学 | 盐藻的收集与β-胡萝卜素的提取方法 |
JPH07231959A (ja) * | 1994-02-23 | 1995-09-05 | Torai Toentei One Kk | スタンド付きゴルフバッグ |
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WO2004051707A3 (en) | 2005-02-17 |
DE10392313B4 (de) | 2014-07-10 |
CN1692499A (zh) | 2005-11-02 |
US7115896B2 (en) | 2006-10-03 |
AU2003298891A1 (en) | 2004-06-23 |
TWI249246B (en) | 2006-02-11 |
EP1568083A4 (en) | 2010-07-14 |
DE10392313T5 (de) | 2005-10-06 |
AU2003298891A8 (en) | 2004-06-23 |
EP1568083A2 (en) | 2005-08-31 |
JP2005527988A (ja) | 2005-09-15 |
US20040119063A1 (en) | 2004-06-24 |
US20060154455A1 (en) | 2006-07-13 |
KR20050084774A (ko) | 2005-08-29 |
WO2004051707A2 (en) | 2004-06-17 |
TW200428652A (en) | 2004-12-16 |
KR100773997B1 (ko) | 2007-11-08 |
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