CA2178824A1 - A low temperature sintering route for aluminum nitride ceramics - Google Patents
A low temperature sintering route for aluminum nitride ceramicsInfo
- Publication number
- CA2178824A1 CA2178824A1 CA002178824A CA2178824A CA2178824A1 CA 2178824 A1 CA2178824 A1 CA 2178824A1 CA 002178824 A CA002178824 A CA 002178824A CA 2178824 A CA2178824 A CA 2178824A CA 2178824 A1 CA2178824 A1 CA 2178824A1
- Authority
- CA
- Canada
- Prior art keywords
- mixture
- presintering
- sintering
- aluminum nitride
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 29
- 238000009766 low-temperature sintering Methods 0.000 title description 2
- 238000005245 sintering Methods 0.000 claims abstract description 125
- 239000000203 mixture Substances 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 41
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000292 calcium oxide Substances 0.000 claims abstract description 33
- 235000012255 calcium oxide Nutrition 0.000 claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 18
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- -1 lanthanide metals Chemical class 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000004100 electronic packaging Methods 0.000 abstract description 4
- 150000002602 lanthanoids Chemical class 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 description 49
- 239000012071 phase Substances 0.000 description 21
- 239000011230 binding agent Substances 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 238000000280 densification Methods 0.000 description 8
- 229910052761 rare earth metal Inorganic materials 0.000 description 8
- 150000002910 rare earth metals Chemical class 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000007792 addition Methods 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007582 slurry-cast process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- 241001136792 Alle Species 0.000 description 1
- 101100145038 Aspergillus oryzae (strain ATCC 42149 / RIB 40) rntA gene Proteins 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000238366 Cephalopoda Species 0.000 description 1
- 101100061188 Drosophila melanogaster dila gene Proteins 0.000 description 1
- 101100252165 Mus musculus Rnd2 gene Proteins 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/172,032 US5424261A (en) | 1993-12-22 | 1993-12-22 | Low temperature sintering route for aluminum nitride ceramics |
| US08/172,032 | 1993-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2178824A1 true CA2178824A1 (en) | 1995-06-29 |
Family
ID=22626086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002178824A Abandoned CA2178824A1 (en) | 1993-12-22 | 1994-12-21 | A low temperature sintering route for aluminum nitride ceramics |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5424261A (en, 2012) |
| EP (1) | EP0684937A1 (en, 2012) |
| JP (1) | JPH08507038A (en, 2012) |
| CN (1) | CN1142813A (en, 2012) |
| AU (1) | AU1442595A (en, 2012) |
| CA (1) | CA2178824A1 (en, 2012) |
| MY (1) | MY111576A (en, 2012) |
| SG (1) | SG43215A1 (en, 2012) |
| TW (1) | TW260656B (en, 2012) |
| WO (1) | WO1995017355A1 (en, 2012) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5744411A (en) * | 1993-07-12 | 1998-04-28 | The Dow Chemical Company | Aluminum nitride sintered body with high thermal conductivity and its preparation |
| US5482903A (en) * | 1993-12-22 | 1996-01-09 | International Business Machines Corporation | Aluminum nitride body utilizing a vitreous sintering additive |
| JPH0881267A (ja) * | 1994-09-16 | 1996-03-26 | Toshiba Corp | 窒化アルミニウム焼結体、その製造方法と窒化アルミニウム回路基板、その製造方法 |
| WO1996016916A1 (fr) * | 1994-12-01 | 1996-06-06 | Kabushiki Kaisha Toshiba | Produit fritte en nitrure d'alumimium et son procede de production |
| US5552232A (en) * | 1994-12-21 | 1996-09-03 | International Business Machines Corporation | Aluminum nitride body having graded metallurgy |
| JP3100871B2 (ja) * | 1995-07-11 | 2000-10-23 | 株式会社東芝 | 窒化アルミニウム焼結体 |
| US5932043A (en) * | 1997-03-18 | 1999-08-03 | International Business Machines Corporation | Method for flat firing aluminum nitride/tungsten electronic modules |
| RU2132832C1 (ru) * | 1997-04-16 | 1999-07-10 | Научно-исследовательский институт высоких напряжений при ТПУ | Способ получения шихты, содержащей нитрид алюминия |
| US6004624A (en) * | 1997-07-02 | 1999-12-21 | International Business Machines Corporation | Method for the controlling of certain second phases in aluminum nitride |
| DE19746010A1 (de) * | 1997-10-17 | 1999-04-22 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von drucklos gesinterten Aluminiumnitrid-Keramiken mit hoher Wärmeleitfähigkeit |
| US5888446A (en) * | 1998-01-15 | 1999-03-30 | International Business Machines Corporation | Method of forming an aluminum nitride article utilizing a platinum catalyst |
| JP4013386B2 (ja) | 1998-03-02 | 2007-11-28 | 住友電気工業株式会社 | 半導体製造用保持体およびその製造方法 |
| CN1081178C (zh) * | 1998-07-08 | 2002-03-20 | 中国科学院上海硅酸盐研究所 | 高热导氮化铝陶瓷的制备方法 |
| CN1092165C (zh) * | 1998-07-08 | 2002-10-09 | 中国科学院上海硅酸盐研究所 | 一种低温烧结制备氮化铝陶瓷的方法 |
| EP0970932A1 (en) * | 1998-07-10 | 2000-01-12 | Sumitomo Electric Industries, Ltd. | Ceramic base material |
| RU2171793C2 (ru) * | 1999-10-14 | 2001-08-10 | Научно-исследовательский институт высоких напряжений при Томском политехническом университете | Способ получения шихты оксинитрида алюминия |
| CN100473373C (zh) * | 2002-10-18 | 2009-04-01 | 中国科学院上海硅酸盐研究所 | 低成本可切削的氧化锆陶瓷牙科修复体及其制备方法 |
| US7547408B1 (en) * | 2006-07-28 | 2009-06-16 | General Electric Company | Process for reducing non-uniformities in the density of sintered materials |
| US8858745B2 (en) * | 2008-11-12 | 2014-10-14 | Applied Materials, Inc. | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas |
| CN101570437B (zh) * | 2009-04-30 | 2013-01-09 | 潮州三环（集团）股份有限公司 | 一种连续式低温烧结高导热率AlN陶瓷的方法及其产品 |
| JP2015514661A (ja) * | 2012-02-29 | 2015-05-21 | ハリス，ジョナサン・エイチ | 過渡液相、窒化アルミニウム製部品の常圧接合 |
| CN103387393B (zh) * | 2013-07-25 | 2014-11-05 | 中国计量学院 | 一种氮化铝陶瓷及其制备方法 |
| CN103539457A (zh) * | 2013-09-29 | 2014-01-29 | 合肥工业大学 | 一种微电子封装用AlN陶瓷基板的制备方法 |
| CN104715994B (zh) * | 2013-12-13 | 2017-08-25 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
| CN106631036A (zh) * | 2016-12-07 | 2017-05-10 | 中国电子科技集团公司第五十五研究所 | 一种高温共烧氮化铝陶瓷的烧结方法 |
| EP3699652B1 (en) * | 2017-10-19 | 2022-08-24 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength converter |
| KR102500846B1 (ko) * | 2019-03-26 | 2023-02-15 | 주식회사 엘지화학 | 붕소 치환된 질화알루미늄 분말 및 이를 제조하기 위한 방법 |
| CN113563085B (zh) * | 2021-08-04 | 2022-07-05 | 湖南省新化县鑫星电子陶瓷有限责任公司 | 一种高介电性能的AlN电子陶瓷材料 |
| CN115745623B (zh) * | 2022-11-23 | 2024-02-06 | 郑州大学 | 氮化铝复合材料、制备方法及其应用 |
| CN116854481A (zh) * | 2023-06-29 | 2023-10-10 | 北京科技大学 | 一种低温快速制备高导热复杂形状氮化铝陶瓷的方法 |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57181356A (en) * | 1981-04-30 | 1982-11-08 | Hitachi Ltd | Sintered aluminum nitride body with high heat conductivity |
| US4520116A (en) * | 1981-08-31 | 1985-05-28 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
| US4720362A (en) * | 1981-08-31 | 1988-01-19 | Raytheon Company | Transparent aluminum oxynitride and method of manufacture |
| DE3333406A1 (de) * | 1982-09-17 | 1984-03-22 | Tokuyama Soda K.K., Tokuyama, Yamaguchi | Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel |
| JPS59107975A (ja) * | 1982-12-08 | 1984-06-22 | 旭硝子株式会社 | ＳｉＣ質焼結体およびその製法 |
| DE3247985C2 (de) * | 1982-12-24 | 1992-04-16 | W.C. Heraeus Gmbh, 6450 Hanau | Keramischer Träger |
| US4533645A (en) * | 1983-08-01 | 1985-08-06 | General Electric Company | High thermal conductivity aluminum nitride ceramic body |
| US4478785A (en) * | 1983-08-01 | 1984-10-23 | General Electric Company | Process of pressureless sintering to produce dense, high thermal conductivity aluminum nitride ceramic body |
| DE3337630A1 (de) * | 1983-10-15 | 1985-04-25 | W.C. Heraeus Gmbh, 6450 Hanau | Temperaturausgleichskoerper |
| US4547471A (en) * | 1983-11-18 | 1985-10-15 | General Electric Company | High thermal conductivity aluminum nitride ceramic body |
| JPS60127267A (ja) * | 1983-12-12 | 1985-07-06 | 株式会社東芝 | 高熱伝導性窒化アルミニウム焼結体の製造方法 |
| EP0153737B1 (en) * | 1984-02-27 | 1993-07-28 | Kabushiki Kaisha Toshiba | Circuit substrate having high thermal conductivity |
| JPS60195059A (ja) * | 1984-03-15 | 1985-10-03 | 株式会社トクヤマ | 複合焼結体 |
| DE3572155D1 (en) * | 1984-09-28 | 1989-09-14 | Toshiba Kk | Process for production of readily sinterable aluminum nitride powder |
| US5165983A (en) * | 1984-09-30 | 1992-11-24 | Kabushiki Kaisha Toshiba | Method for production of aluminum nitride ceramic plate |
| US4578234A (en) * | 1984-10-01 | 1986-03-25 | General Electric Company | Process of pressureless sintering to produce dense high thermal conductivity ceramic body of deoxidized aluminum nitride |
| US4672046A (en) * | 1984-10-15 | 1987-06-09 | Tdk Corporation | Sintered aluminum nitride body |
| US4578233A (en) * | 1984-11-01 | 1986-03-25 | General Electric Company | Pressureless sintering process to produce high thermal conductivity ceramic body of aluminum nitride |
| US4746637A (en) * | 1984-11-08 | 1988-05-24 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body and process for producing the same |
| US4578365A (en) * | 1984-11-26 | 1986-03-25 | General Electric Company | High thermal conductivity ceramic body of aluminum nitride |
| US4578364A (en) * | 1984-12-07 | 1986-03-25 | General Electric Company | High thermal conductivity ceramic body of aluminum nitride |
| US4578232A (en) * | 1984-12-17 | 1986-03-25 | General Electric Company | Pressureless sintering process to produce high thermal conductivity ceramic body of aluminum nitride |
| US4877760A (en) * | 1985-05-22 | 1989-10-31 | Ngk Spark Plug Co., Ltd. | Aluminum nitride sintered body with high thermal conductivity and process for producing same |
| EP0207465B1 (en) * | 1985-06-28 | 1992-04-15 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body and preparation thereof |
| CA1262149A (en) * | 1985-08-13 | 1989-10-03 | Hitofumi Taniguchi | Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body |
| EP0212659B1 (en) * | 1985-08-29 | 1990-11-07 | Toshiba Tungaloy Co. Ltd. | Plastic processing method of pressure or pressureless sintered ceramic body and ceramics-made molded material formed by the method |
| JPS63190761A (ja) * | 1987-01-30 | 1988-08-08 | 京セラ株式会社 | 窒化アルミニウム質焼結体 |
| US5154863A (en) * | 1985-10-31 | 1992-10-13 | Kyocera Corporation | Aluminum nitride-based sintered body and process for the production thereof |
| US4678683A (en) * | 1985-12-13 | 1987-07-07 | General Electric Company | Process for cofiring structure comprised of ceramic substrate and refractory metal metallization |
| US4897372A (en) * | 1985-12-18 | 1990-01-30 | General Electric Company | High thermal conductivity ceramic body |
| JPH0757709B2 (ja) * | 1986-01-31 | 1995-06-21 | ティーディーケイ株式会社 | 窒化アルミニウム焼結体およびその製造方法 |
| US4764321A (en) * | 1986-03-28 | 1988-08-16 | General Electric Company | High thermal conductivity ceramic body |
| US4818455A (en) * | 1986-05-30 | 1989-04-04 | General Electric Company | High thermal conductivity ceramic body |
| US4843042A (en) * | 1986-06-30 | 1989-06-27 | General Electric Company | Alkaline earth fluoride additive for sintering aluminum nitride |
| JPH0717455B2 (ja) * | 1986-07-18 | 1995-03-01 | 株式会社トクヤマ | 窒化アルミニウム焼結体の製造方法 |
| US4810679A (en) * | 1986-07-21 | 1989-03-07 | General Electric Company | Rare earth fluoride additive for sintering aluminum nitride |
| EP0308873B1 (en) * | 1987-09-22 | 1993-08-04 | Nippon Steel Corporation | Ceramic composite and process for preparation thereof |
| US5073526A (en) * | 1988-01-27 | 1991-12-17 | W. R. Grace & Co.-Conn. | Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite |
| US5250478A (en) * | 1988-07-28 | 1993-10-05 | Kyocera Corporation | Aluminum nitride sintered body and process for preparation thereof |
| JPH02275769A (ja) * | 1989-04-17 | 1990-11-09 | Kawasaki Steel Corp | 窒化アルミニウム焼結体の製造方法 |
| JPH03218977A (ja) * | 1990-01-22 | 1991-09-26 | Mitsubishi Electric Corp | 窒化アルミニウム焼結体の製造方法 |
| JP2943275B2 (ja) * | 1990-08-07 | 1999-08-30 | 住友電気工業株式会社 | 高熱伝導性着色窒化アルミニウム焼結体およびその製造方法 |
| JPH04254477A (ja) * | 1991-02-04 | 1992-09-09 | Sumitomo Electric Ind Ltd | ガラス−窒化アルミニウム複合材料 |
| US5320990A (en) * | 1993-03-30 | 1994-06-14 | The Dow Chemical Company | Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies |
-
1993
- 1993-12-22 US US08/172,032 patent/US5424261A/en not_active Expired - Lifetime
-
1994
- 1994-12-21 TW TW083112004A patent/TW260656B/zh active
- 1994-12-21 WO PCT/US1994/014761 patent/WO1995017355A1/en not_active Application Discontinuation
- 1994-12-21 JP JP7517589A patent/JPH08507038A/ja active Pending
- 1994-12-21 CN CN94195029A patent/CN1142813A/zh active Pending
- 1994-12-21 CA CA002178824A patent/CA2178824A1/en not_active Abandoned
- 1994-12-21 AU AU14425/95A patent/AU1442595A/en not_active Abandoned
- 1994-12-21 EP EP95906065A patent/EP0684937A1/en not_active Withdrawn
- 1994-12-21 SG SG1996005677A patent/SG43215A1/en unknown
- 1994-12-22 MY MYPI94003496A patent/MY111576A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1142813A (zh) | 1997-02-12 |
| WO1995017355A1 (en) | 1995-06-29 |
| SG43215A1 (en) | 1997-10-17 |
| JPH08507038A (ja) | 1996-07-30 |
| US5424261A (en) | 1995-06-13 |
| EP0684937A4 (en) | 1995-10-17 |
| TW260656B (en, 2012) | 1995-10-21 |
| AU1442595A (en) | 1995-07-10 |
| MY111576A (en) | 2000-08-30 |
| EP0684937A1 (en) | 1995-12-06 |
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| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |