TW260656B - - Google Patents

Info

Publication number
TW260656B
TW260656B TW083112004A TW83112004A TW260656B TW 260656 B TW260656 B TW 260656B TW 083112004 A TW083112004 A TW 083112004A TW 83112004 A TW83112004 A TW 83112004A TW 260656 B TW260656 B TW 260656B
Authority
TW
Taiwan
Application number
TW083112004A
Original Assignee
Carborundum Co
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carborundum Co, Ibm filed Critical Carborundum Co
Application granted granted Critical
Publication of TW260656B publication Critical patent/TW260656B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
TW083112004A 1993-12-22 1994-12-21 TW260656B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/172,032 US5424261A (en) 1993-12-22 1993-12-22 Low temperature sintering route for aluminum nitride ceramics

Publications (1)

Publication Number Publication Date
TW260656B true TW260656B (zh) 1995-10-21

Family

ID=22626086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083112004A TW260656B (zh) 1993-12-22 1994-12-21

Country Status (10)

Country Link
US (1) US5424261A (zh)
EP (1) EP0684937A1 (zh)
JP (1) JPH08507038A (zh)
CN (1) CN1142813A (zh)
AU (1) AU1442595A (zh)
CA (1) CA2178824A1 (zh)
MY (1) MY111576A (zh)
SG (1) SG43215A1 (zh)
TW (1) TW260656B (zh)
WO (1) WO1995017355A1 (zh)

Families Citing this family (28)

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US5744411A (en) * 1993-07-12 1998-04-28 The Dow Chemical Company Aluminum nitride sintered body with high thermal conductivity and its preparation
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EP0747332B1 (en) * 1994-12-01 2001-09-12 Kabushiki Kaisha Toshiba Aluminum nitride sinter and process for producing the same
US5552232A (en) * 1994-12-21 1996-09-03 International Business Machines Corporation Aluminum nitride body having graded metallurgy
JP3100871B2 (ja) * 1995-07-11 2000-10-23 株式会社東芝 窒化アルミニウム焼結体
US5932043A (en) * 1997-03-18 1999-08-03 International Business Machines Corporation Method for flat firing aluminum nitride/tungsten electronic modules
US6004624A (en) 1997-07-02 1999-12-21 International Business Machines Corporation Method for the controlling of certain second phases in aluminum nitride
DE19746010A1 (de) * 1997-10-17 1999-04-22 Fraunhofer Ges Forschung Verfahren zur Herstellung von drucklos gesinterten Aluminiumnitrid-Keramiken mit hoher Wärmeleitfähigkeit
US5888446A (en) * 1998-01-15 1999-03-30 International Business Machines Corporation Method of forming an aluminum nitride article utilizing a platinum catalyst
JP4013386B2 (ja) 1998-03-02 2007-11-28 住友電気工業株式会社 半導体製造用保持体およびその製造方法
CN1092165C (zh) * 1998-07-08 2002-10-09 中国科学院上海硅酸盐研究所 一种低温烧结制备氮化铝陶瓷的方法
CN1081178C (zh) * 1998-07-08 2002-03-20 中国科学院上海硅酸盐研究所 高热导氮化铝陶瓷的制备方法
EP0970932A1 (en) * 1998-07-10 2000-01-12 Sumitomo Electric Industries, Ltd. Ceramic base material
CN100473373C (zh) * 2002-10-18 2009-04-01 中国科学院上海硅酸盐研究所 低成本可切削的氧化锆陶瓷牙科修复体及其制备方法
US7547408B1 (en) * 2006-07-28 2009-06-16 General Electric Company Process for reducing non-uniformities in the density of sintered materials
US8858745B2 (en) * 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
CN101570437B (zh) * 2009-04-30 2013-01-09 潮州三环(集团)股份有限公司 一种连续式低温烧结高导热率AlN陶瓷的方法及其产品
WO2013130918A1 (en) * 2012-02-29 2013-09-06 Harris, Jonathan, H. Transient liquid phase, pressureless joining of aluminum nitride components
CN103387393B (zh) * 2013-07-25 2014-11-05 中国计量学院 一种氮化铝陶瓷及其制备方法
CN103539457A (zh) * 2013-09-29 2014-01-29 合肥工业大学 一种微电子封装用AlN陶瓷基板的制备方法
CN104715994B (zh) * 2013-12-13 2017-08-25 中微半导体设备(上海)有限公司 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法
CN106631036A (zh) * 2016-12-07 2017-05-10 中国电子科技集团公司第五十五研究所 一种高温共烧氮化铝陶瓷的烧结方法
CN111279228B (zh) * 2017-10-19 2022-01-07 松下知识产权经营株式会社 波长转换体
KR102500846B1 (ko) * 2019-03-26 2023-02-15 주식회사 엘지화학 붕소 치환된 질화알루미늄 분말 및 이를 제조하기 위한 방법
CN113563085B (zh) * 2021-08-04 2022-07-05 湖南省新化县鑫星电子陶瓷有限责任公司 一种高介电性能的AlN电子陶瓷材料
CN115745623B (zh) * 2022-11-23 2024-02-06 郑州大学 氮化铝复合材料、制备方法及其应用
CN116854481A (zh) * 2023-06-29 2023-10-10 北京科技大学 一种低温快速制备高导热复杂形状氮化铝陶瓷的方法

Family Cites Families (44)

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JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
US4720362A (en) * 1981-08-31 1988-01-19 Raytheon Company Transparent aluminum oxynitride and method of manufacture
US4520116A (en) * 1981-08-31 1985-05-28 Raytheon Company Transparent aluminum oxynitride and method of manufacture
DE3333406A1 (de) * 1982-09-17 1984-03-22 Tokuyama Soda K.K., Tokuyama, Yamaguchi Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel
JPS59107975A (ja) * 1982-12-08 1984-06-22 旭硝子株式会社 SiC質焼結体およびその製法
DE3247985C2 (de) * 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Keramischer Träger
US4478785A (en) * 1983-08-01 1984-10-23 General Electric Company Process of pressureless sintering to produce dense, high thermal conductivity aluminum nitride ceramic body
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DE3337630A1 (de) * 1983-10-15 1985-04-25 W.C. Heraeus Gmbh, 6450 Hanau Temperaturausgleichskoerper
US4547471A (en) * 1983-11-18 1985-10-15 General Electric Company High thermal conductivity aluminum nitride ceramic body
JPS60127267A (ja) * 1983-12-12 1985-07-06 株式会社東芝 高熱伝導性窒化アルミニウム焼結体の製造方法
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JPS63190761A (ja) * 1987-01-30 1988-08-08 京セラ株式会社 窒化アルミニウム質焼結体
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US4678683A (en) * 1985-12-13 1987-07-07 General Electric Company Process for cofiring structure comprised of ceramic substrate and refractory metal metallization
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US4843042A (en) * 1986-06-30 1989-06-27 General Electric Company Alkaline earth fluoride additive for sintering aluminum nitride
JPH0717455B2 (ja) * 1986-07-18 1995-03-01 株式会社トクヤマ 窒化アルミニウム焼結体の製造方法
US4810679A (en) * 1986-07-21 1989-03-07 General Electric Company Rare earth fluoride additive for sintering aluminum nitride
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US5073526A (en) * 1988-01-27 1991-12-17 W. R. Grace & Co.-Conn. Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite
US5250478A (en) * 1988-07-28 1993-10-05 Kyocera Corporation Aluminum nitride sintered body and process for preparation thereof
JPH02275769A (ja) * 1989-04-17 1990-11-09 Kawasaki Steel Corp 窒化アルミニウム焼結体の製造方法
JPH03218977A (ja) * 1990-01-22 1991-09-26 Mitsubishi Electric Corp 窒化アルミニウム焼結体の製造方法
JP2943275B2 (ja) * 1990-08-07 1999-08-30 住友電気工業株式会社 高熱伝導性着色窒化アルミニウム焼結体およびその製造方法
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US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies

Also Published As

Publication number Publication date
CA2178824A1 (en) 1995-06-29
WO1995017355A1 (en) 1995-06-29
US5424261A (en) 1995-06-13
CN1142813A (zh) 1997-02-12
SG43215A1 (en) 1997-10-17
JPH08507038A (ja) 1996-07-30
EP0684937A4 (en) 1995-10-17
AU1442595A (en) 1995-07-10
MY111576A (en) 2000-08-30
EP0684937A1 (en) 1995-12-06

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