BR112015029099A2 - embalagem de dispositivo semicondutor em pilha, método de produção da mesma e dispositivo de computação - Google Patents

embalagem de dispositivo semicondutor em pilha, método de produção da mesma e dispositivo de computação

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Publication number
BR112015029099A2
BR112015029099A2 BR112015029099A BR112015029099A BR112015029099A2 BR 112015029099 A2 BR112015029099 A2 BR 112015029099A2 BR 112015029099 A BR112015029099 A BR 112015029099A BR 112015029099 A BR112015029099 A BR 112015029099A BR 112015029099 A2 BR112015029099 A2 BR 112015029099A2
Authority
BR
Brazil
Prior art keywords
production method
stacked semiconductor
cell production
semiconductor device
computing device
Prior art date
Application number
BR112015029099A
Other languages
English (en)
Inventor
Geissler Christian
Seidemann Georg
Reingruber Klaus
Original Assignee
Intel Ip Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Ip Corp filed Critical Intel Ip Corp
Publication of BR112015029099A2 publication Critical patent/BR112015029099A2/pt

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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
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Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101672622B1 (ko) 2015-02-09 2016-11-03 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
CN106463481B (zh) * 2015-04-28 2019-11-08 新电元工业株式会社 半导体模块以及半导体模块的制造方法
US10276541B2 (en) 2015-06-30 2019-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. 3D package structure and methods of forming same
US10720788B2 (en) * 2015-10-09 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Wireless charging devices having wireless charging coils and methods of manufacture thereof
KR20170085833A (ko) * 2016-01-15 2017-07-25 삼성전기주식회사 전자 부품 패키지 및 그 제조방법
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US20170338204A1 (en) * 2016-05-17 2017-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Device and Method for UBM/RDL Routing
DE102016110862B4 (de) 2016-06-14 2022-06-30 Snaptrack, Inc. Modul und Verfahren zur Herstellung einer Vielzahl von Modulen
US10366968B2 (en) * 2016-09-30 2019-07-30 Intel IP Corporation Interconnect structure for a microelectronic device
US10312194B2 (en) * 2016-11-04 2019-06-04 General Electric Company Stacked electronics package and method of manufacturing thereof
KR101983188B1 (ko) * 2016-12-22 2019-05-28 삼성전기주식회사 팬-아웃 반도체 패키지
MY191543A (en) * 2016-12-29 2022-06-30 Intel Corp Programmable redistribution die
KR20180090527A (ko) * 2017-02-03 2018-08-13 삼성전기주식회사 반도체 패키지와 그 제조 방법
TWI660225B (zh) * 2017-04-21 2019-05-21 新加坡商先進科技新加坡有限公司 製作在可佈線襯底上的顯示面板
US20190035715A1 (en) * 2017-07-31 2019-01-31 Innolux Corporation Package device and manufacturing method thereof
US11101209B2 (en) * 2017-09-29 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Redistribution structures in semiconductor packages and methods of forming same
US11039531B1 (en) 2018-02-05 2021-06-15 Flex Ltd. System and method for in-molded electronic unit using stretchable substrates to create deep drawn cavities and features
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US10593647B2 (en) 2018-06-27 2020-03-17 Powertech Technology Inc. Package structure and manufacturing method thereof
US10566686B2 (en) * 2018-06-28 2020-02-18 Micron Technology, Inc. Stacked memory package incorporating millimeter wave antenna in die stack
US11224117B1 (en) 2018-07-05 2022-01-11 Flex Ltd. Heat transfer in the printed circuit board of an SMPS by an integrated heat exchanger
US20200111773A1 (en) * 2018-10-09 2020-04-09 International Business Machines Corporation Integrated circuit (ic) package with hetrogenous ic chip interposer
EP3644359A1 (en) 2018-10-23 2020-04-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Z-axis interconnection with protruding component
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
US10964660B1 (en) 2018-11-20 2021-03-30 Flex Ltd. Use of adhesive films for 3D pick and place assembly of electronic components
US10685948B1 (en) 2018-11-29 2020-06-16 Apple Inc. Double side mounted large MCM package with memory channel length reduction
US10896877B1 (en) * 2018-12-14 2021-01-19 Flex Ltd. System in package with double side mounted board
KR20200076778A (ko) 2018-12-19 2020-06-30 삼성전자주식회사 반도체 패키지의 제조방법
DE102019126974B4 (de) * 2018-12-26 2022-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integriertes schaltungs-package und verfahren
US11183487B2 (en) * 2018-12-26 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and method
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
JP7163224B2 (ja) * 2019-03-15 2022-10-31 ルネサスエレクトロニクス株式会社 電子装置
IT201900006740A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11088125B2 (en) 2019-09-17 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. IPD modules with flexible connection scheme in packaging
US10991648B1 (en) * 2019-11-07 2021-04-27 Nanya Technology Corporation Redistribution layer structure and semiconductor package
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US20220068740A1 (en) * 2020-08-28 2022-03-03 Intel Corporation Semiconductor system and method of forming semiconductor system
US11527481B2 (en) * 2020-09-04 2022-12-13 Intel Corporation Stacked semiconductor package with flyover bridge
US11756871B2 (en) * 2020-09-15 2023-09-12 Sj Semiconductor (Jiangyin) Corporation Fan-out packaging structure and method
US20220084936A1 (en) * 2020-09-17 2022-03-17 Intel Corporation Embedded three-dimensional electrode capacitor
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11646255B2 (en) * 2021-03-18 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Chip package structure including a silicon substrate interposer and methods for forming the same
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
CN114927500B (zh) * 2022-07-19 2022-10-04 武汉大学 基于分布式的双扇出型异构集成三维封装结构及工艺
CN115101519A (zh) * 2022-08-29 2022-09-23 盛合晶微半导体(江阴)有限公司 一种三维堆叠的扇出型封装结构及其制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865197B2 (ja) * 2004-06-30 2012-02-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2006332094A (ja) * 2005-05-23 2006-12-07 Seiko Epson Corp 電子基板の製造方法及び半導体装置の製造方法並びに電子機器の製造方法
JP5183949B2 (ja) * 2007-03-30 2013-04-17 日本電気株式会社 半導体装置の製造方法
US7759212B2 (en) * 2007-12-26 2010-07-20 Stats Chippac, Ltd. System-in-package having integrated passive devices and method therefor
TWI358120B (en) * 2008-07-04 2012-02-11 Gigno Technology Co Ltd Semiconductor chip module and manufacturing method
US7859099B2 (en) * 2008-12-11 2010-12-28 Stats Chippac Ltd. Integrated circuit packaging system having through silicon via with direct interconnects and method of manufacture thereof
TWM373037U (en) * 2009-07-21 2010-01-21 Hon Hai Prec Ind Co Ltd Electrical connector
US20110024899A1 (en) * 2009-07-28 2011-02-03 Kenji Masumoto Substrate structure for cavity package
JP5266156B2 (ja) * 2009-07-31 2013-08-21 ルネサスエレクトロニクス株式会社 差動増幅器
US20110186960A1 (en) * 2010-02-03 2011-08-04 Albert Wu Techniques and configurations for recessed semiconductor substrates
US20110193235A1 (en) * 2010-02-05 2011-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC Architecture with Die Inside Interposer
US8519537B2 (en) * 2010-02-26 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. 3D semiconductor package interposer with die cavity
US8455995B2 (en) * 2010-04-16 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. TSVs with different sizes in interposers for bonding dies
US8866301B2 (en) * 2010-05-18 2014-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Package systems having interposers with interconnection structures
US8736065B2 (en) * 2010-12-22 2014-05-27 Intel Corporation Multi-chip package having a substrate with a plurality of vertically embedded die and a process of forming the same
US8710668B2 (en) * 2011-06-17 2014-04-29 Stats Chippac Ltd. Integrated circuit packaging system with laser hole and method of manufacture thereof
US8754514B2 (en) * 2011-08-10 2014-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-chip wafer level package
WO2013035715A1 (ja) * 2011-09-07 2013-03-14 株式会社村田製作所 モジュールの製造方法およびモジュール
KR101332916B1 (ko) * 2011-12-29 2013-11-26 주식회사 네패스 반도체 패키지 및 그 제조 방법
US8889484B2 (en) * 2012-10-02 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for a component package
US9478474B2 (en) 2012-12-28 2016-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for forming package-on-packages
US8970023B2 (en) 2013-02-04 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and methods of forming same
US20140264831A1 (en) * 2013-03-14 2014-09-18 Thorsten Meyer Chip arrangement and a method for manufacturing a chip arrangement

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