BR112013033122A2 - método e aparelho para detectar radiação infravermelha com ganho - Google Patents

método e aparelho para detectar radiação infravermelha com ganho

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Publication number
BR112013033122A2
BR112013033122A2 BR112013033122A BR112013033122A BR112013033122A2 BR 112013033122 A2 BR112013033122 A2 BR 112013033122A2 BR 112013033122 A BR112013033122 A BR 112013033122A BR 112013033122 A BR112013033122 A BR 112013033122A BR 112013033122 A2 BR112013033122 A2 BR 112013033122A2
Authority
BR
Brazil
Prior art keywords
methods
infrared radiation
photodetector
infrared
detecting gain
Prior art date
Application number
BR112013033122A
Other languages
English (en)
Inventor
Bhabendra K Pradhan
Do Young Kim
Franky So
Jae Woong Lee
Original Assignee
Nanoholdings Llc
Univ Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoholdings Llc, Univ Florida filed Critical Nanoholdings Llc
Publication of BR112013033122A2 publication Critical patent/BR112013033122A2/pt

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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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    • H01L31/02—Details
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    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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    • H01L31/02—Details
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    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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    • H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
    • H01L31/143—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
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Abstract

resumo patente de invenção: "método e aparelho para detectar radiação infravermelha com ganho". a presente invenção refere-se a fotodetectores, métodos de fabricação dos mesmos e métodos para usar os mesmos para detectar radiação. um fotodetector pode incluir um primeiro eletrodo, uma camada sensibilizada à luz, uma camada de bloqueio/tunelamento de elétron e um segundo eletrodo. dispositivos de conversão ascendente de infravermelho em visível, métodos de fabricação dos mesmos e métodos com o uso dos mesmos para detectar radiação também são descritos. um dispositivo de conversão ascendente de infravermelho em visível pode incluir um fotodetector e um oled acoplado ao fotodetector.
BR112013033122A 2011-06-30 2012-07-02 método e aparelho para detectar radiação infravermelha com ganho BR112013033122A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161503317P 2011-06-30 2011-06-30
PCT/US2012/045272 WO2013003850A2 (en) 2011-06-30 2012-07-02 A method and apparatus for detecting infrared radiation with gain

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BR112013033122A2 true BR112013033122A2 (pt) 2017-01-24

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US (2) US10134815B2 (pt)
EP (1) EP2727154B1 (pt)
JP (2) JP6502093B2 (pt)
KR (1) KR102059208B1 (pt)
CN (1) CN103733355B (pt)
AU (1) AU2012275060A1 (pt)
BR (1) BR112013033122A2 (pt)
CA (1) CA2840498A1 (pt)
MX (1) MX2013015214A (pt)
RU (1) RU2014102650A (pt)
WO (1) WO2013003850A2 (pt)

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CN109713008A (zh) * 2017-10-26 2019-05-03 苏州大学 一种近红外-可见光上转换器件及其制备方法
CN108831905B (zh) * 2018-05-28 2021-07-09 东南大学 一种基于半导体量子点的红外探测-可见光显示集成系统、制备方法及成像方法
CN109037372B (zh) * 2018-07-20 2019-12-24 大连民族大学 一种基于氧化钼微米带/p型Si的多波段光响应器件及其制备方法
CN109728122B (zh) * 2019-01-03 2020-11-20 吉林大学 一种基于FTO/TiO2/MoO3异质结的紫外探测器及其制备方法
CN110265561A (zh) * 2019-06-17 2019-09-20 深圳扑浪创新科技有限公司 一种纯量子点上转换发光器件及其制备方法
CN110400862B (zh) * 2019-07-29 2021-04-02 中国科学院长春光学精密机械与物理研究所 一种红外热辐射光源及红外传感器
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MX2013015214A (es) 2014-03-21
CN103733355A (zh) 2014-04-16
CA2840498A1 (en) 2013-01-03
AU2012275060A1 (en) 2014-01-30
JP2014521214A (ja) 2014-08-25
WO2013003850A8 (en) 2013-05-16
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CN103733355B (zh) 2017-02-08
US10134815B2 (en) 2018-11-20
US20170117335A1 (en) 2017-04-27
RU2014102650A (ru) 2015-08-10
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KR20140064767A (ko) 2014-05-28
JP6502093B2 (ja) 2019-04-17

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