RU2013139230A - Фотодетектор и устройство преобразования с повышением частоты и усилением (эп) - Google Patents

Фотодетектор и устройство преобразования с повышением частоты и усилением (эп) Download PDF

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RU2013139230A
RU2013139230A RU2013139230/28A RU2013139230A RU2013139230A RU 2013139230 A RU2013139230 A RU 2013139230A RU 2013139230/28 A RU2013139230/28 A RU 2013139230/28A RU 2013139230 A RU2013139230 A RU 2013139230A RU 2013139230 A RU2013139230 A RU 2013139230A
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Фрэнки СОУ
До Юн КИМ
Прадхан БХАБЕНДРА
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Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк.
Нанохолдингс, Ллк
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Abstract

1. Инфракрасный фотодетектор с усилением, содержащий катод, слой активируемого ИК-излучением материала, слой умножения заряда (СУЗ) и анод, отличающийся тем, что СУЗ отделяет слой активируемого ИК-излучением материала от катода и характеризуется уровнем НСМО на ≥0,5 эВ выше, чем уровень Ферми катода в отсутствие ИК-излучения, или СУЗ отделяет слой активируемого ИК-излучением материала от анода и характеризуется уровнем ВЗМО на ≥0,5 эВ ниже, чем уровень Ферми анода в отсутствие ИК-излучения.2. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что катод содержит Ag, Ca, Mg, легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), LiF/Al/ОИО, Ag/ОИО, CsCO/ОИО, углеродные нанотрубки или серебряные нанопроволоки.3. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что слой активируемого ИК-излучением материала содержит PCTDA, SnPc, SnPc:C, AlPcCl, AlPcCl:C, TiOPc, TiOPc:C, КП PbSe, КП PbS, PbSe, PbS, InAs, InGaAs, Si, Ge или GaAs.4. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что СУЗ содержит нафталинтетракарбоновый ангидрид (NTCDA), 2,9-диметил-4,7-дифенил-1,10-фенантролин (ВСР), n-бис(трифенилсилил)бензол (UGH2), 4,7-дифенил-1,10-фенантролин (BPhen), трис-(8-нидроксихинолин)алюминий (Alq), 3,5′-N,N′-дикарбазолбензол (mCP), C, трис[3-(3-пиридил)мезитил]боран (3TPYMB), ZnO или TiO.5. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что анод содержит Ag, Ca, Mg, легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), LiF/Al/ОИО, Ag/ОИО, CsCO/ОИО, углеродные нанотрубки или

Claims (19)

1. Инфракрасный фотодетектор с усилением, содержащий катод, слой активируемого ИК-излучением материала, слой умножения заряда (СУЗ) и анод, отличающийся тем, что СУЗ отделяет слой активируемого ИК-излучением материала от катода и характеризуется уровнем НСМО на ≥0,5 эВ выше, чем уровень Ферми катода в отсутствие ИК-излучения, или СУЗ отделяет слой активируемого ИК-излучением материала от анода и характеризуется уровнем ВЗМО на ≥0,5 эВ ниже, чем уровень Ферми анода в отсутствие ИК-излучения.
2. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что катод содержит Ag, Ca, Mg, легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), LiF/Al/ОИО, Ag/ОИО, CsCO3/ОИО, углеродные нанотрубки или серебряные нанопроволоки.
3. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что слой активируемого ИК-излучением материала содержит PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, КП PbSe, КП PbS, PbSe, PbS, InAs, InGaAs, Si, Ge или GaAs.
4. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что СУЗ содержит нафталинтетракарбоновый ангидрид (NTCDA), 2,9-диметил-4,7-дифенил-1,10-фенантролин (ВСР), n-бис(трифенилсилил)бензол (UGH2), 4,7-дифенил-1,10-фенантролин (BPhen), трис-(8-нидроксихинолин)алюминий (Alq3), 3,5′-N,N′-дикарбазолбензол (mCP), C60, трис[3-(3-пиридил)мезитил]боран (3TPYMB), ZnO или TiO2.
5. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что анод содержит Ag, Ca, Mg, легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), LiF/Al/ОИО, Ag/ОИО, CsCO3/ОИО, углеродные нанотрубки или серебряные нанопроволоки.
6. Инфракрасный фотодетектор с усилением по п.1, отличающийся тем, что слой активируемого ИК-излучением материала содержит КП PbSe или КП PbS, и СУЗ содержит масляную кислоту, октиламин, этантиол, этандитиол (EDT) или бензолдитиол (BTD).
7. Инфракрасный фотодетектор с усилением по п.1, дополнительно содержащий блокирующий дырки слой, который отделяет слой активируемого ИК-излучением материала от анода.
8. Инфракрасный фотодетектор с усилением по п.7, отличающийся тем, что блокирующий дырки слой содержит 2,9-диметил-4,7-дифенил-1,10-фенантролин (ВСР), n-бис(трифенилсилил)бензол (UGH2), 4,7-дифенил-1,10-фенантролин (BPhen), трис-(8-нидроксихинолин)алюминий (Alq3), 3,5′-N,N′-дикарбазолбензол (mCP), C60, трис[3-(3-пиридил)мезитил]боран (3TPYMB), ZnO или TiO2.
9. Устройство преобразования с повышением частоты и усилением, содержащее инфракрасный фотодетектор с усилением по п.1 и органический светоизлучающий диод (ОСИД).
10. Устройство преобразования с повышением частоты и усилением по п.9, отличающееся тем, что ОСИД содержит катод, слой переноса электронов (СПЭ), светоизлучающий слой (СИС), обеспечивающий транспорт дырок слой (СТД) и анод.
11. Устройство преобразования с повышением частоты и усилением по п.10, отличающееся тем, что катод содержит Ag, Ca, Mg, легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), LiF/Al/ОИО, Ag/ОИО, CsCO3/ОИО, углеродные нанотрубки или серебряные нанопроволоки.
12. Устройство преобразования с повышением частоты и усилением по п.10, отличающееся тем, что СПЭ содержит трис[3-(3-пиридил)мезитил]боран (3TPYMB), 2,9-диметил-4,7-дифенил-1,10-фенантролин (ВСР), 4,7-дифенил-1,10-фенантролин (BPhen) или трис-(8-нидроксихинолин)алюминий (Alq3).
13. Устройство преобразования с повышением частоты и усилением по п.10, отличающееся тем, что светоизлучающий слой (СИС) содержит трис-(2-фенилпиридин)иридий, Ir(ppy)3, поли-[2-метокси-5-(2′-этил-гексилокси)фениленвинилен] (MEH-PPV), трис-(8-нидроксихинолин)алюминий (Alg3) или бис-[(4,6-дифторфенил)пиридинат-N,C2`]пиколинат иридия (III) (FIrpic).
14. Устройство преобразования с повышением частоты и усилением по п.10, отличающееся тем, что СТД содержит 1,1-бис[(ди-4-толиламино)фенил]циклогексан (ТАРС), N,N′-дифенил-N,N′(2-нафтил)-(1,1′-фенил)-4,4′-диамин (NPB) или N,N′-дифенил-N,N′-ди(м-толил)бензидин (TPD).
15. Устройство преобразования с повышением частоты и усилением по п.10, отличающееся тем, что анод содержит легированный оловом оксид индия (ОИО), легированный цинком оксид индия (ОИЦ), легированный алюминием оксид олова (ОАО), легированный алюминием оксид цинка (ОАЦ), углеродные нанотрубки или серебряные нанопроволоки.
16. Устройство преобразования с повышением частоты и усилением по п.9, дополнительно содержащее коммутационный слой, отделяющий инфракрасный фото детектор с усилением по п.1 от ОСИД.
17. Устройство преобразования с повышением частоты и усилением по п.16, отличающееся тем, что коммутационный слой содержит тонкий металл или многослойный соединительный слой.
18. Устройство преобразования с повышением частоты и усилением по п.17, отличающееся тем, что тонкий металл содержит Al, Ag и Au и имеет толщину от 0,1 до 3 нм.
19. Устройство преобразования с повышением частоты и усилением по п.17, отличающееся тем, что многослойный соединительный слой содержит легированный органический слой n-типа, тонкий металлический слой и легированный органический слой p-типа, где: легированный органический слой n-типа содержит Bphen, легированный Cs2CO3, BCP, легированный Cs2CO3, ZnO, легированный Cs2CO3, Bphen, легированный Li, BCP, легированный Li, Bphen, легированный LiF, или ВСР, легированный LiF; тонкий металл содержит слой толщиной от 0,1 до 3 нм из Al, Ag или Au; и легированный органический слой p-типа содержит ТАРС, легированный MoO3, NPB, легированный MoO3, ТАРС, легированный HAT CN, или NPB, легированный HAT CN.
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