BR112013021833A2 - dispositivo fotodetector e de conversão com ganho (ec) - Google Patents
dispositivo fotodetector e de conversão com ganho (ec)Info
- Publication number
- BR112013021833A2 BR112013021833A2 BR112013021833A BR112013021833A BR112013021833A2 BR 112013021833 A2 BR112013021833 A2 BR 112013021833A2 BR 112013021833 A BR112013021833 A BR 112013021833A BR 112013021833 A BR112013021833 A BR 112013021833A BR 112013021833 A2 BR112013021833 A2 BR 112013021833A2
- Authority
- BR
- Brazil
- Prior art keywords
- gain
- photodetector
- cml
- conversion device
- cathode
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 206010070834 Sensitisation Diseases 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 230000004297 night vision Effects 0.000 abstract 1
- 230000008313 sensitization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
- G02B23/12—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices with means for image conversion or intensification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
resumo patente de invenção: "dispositivo fotodetector e de conversão com ganho (ec)". a presente invenção refere-se a fotodetectores de ir com ganho resultante do posicionamento de uma camada de multiplicação de carga (cml) entre o catódio e a camada de ir de sensibilização do fotodetector, em que a carga acumulando na cml reduz a diferença de energia entre o catódio e a cml para promover injeções de elétrons que resultam em ganho para um dispositivo de elétron somente. outras modalidades da invenção são dirigidas para a inclusão dos fotodetectores de ir com ganho no dispositivo de ir-para-visível de alta conversão que pode ser usada em visão noturna e outras aplicações.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161447406P | 2011-02-28 | 2011-02-28 | |
PCT/US2012/026920 WO2013028232A1 (en) | 2011-02-28 | 2012-02-28 | Photodetector and upconversion device with gain (ec) |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013021833A2 true BR112013021833A2 (pt) | 2017-03-28 |
Family
ID=47746746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013021833A BR112013021833A2 (pt) | 2011-02-28 | 2012-02-28 | dispositivo fotodetector e de conversão com ganho (ec) |
Country Status (11)
Country | Link |
---|---|
US (3) | US8829498B2 (pt) |
EP (1) | EP2666191A4 (pt) |
JP (1) | JP6219172B2 (pt) |
KR (1) | KR20140025359A (pt) |
CN (1) | CN105742395B (pt) |
AU (1) | AU2012299422A1 (pt) |
BR (1) | BR112013021833A2 (pt) |
CA (1) | CA2828364A1 (pt) |
RU (1) | RU2013139230A (pt) |
SG (1) | SG192277A1 (pt) |
WO (1) | WO2013028232A1 (pt) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5568305B2 (ja) | 2006-09-29 | 2014-08-06 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | 赤外線検出および表示のための方法および装置 |
MX2012013643A (es) | 2010-05-24 | 2013-05-01 | Univ Florida | Metodo y aparato para proporcionar una capa de bloqueo de carga en un dispositivo de conversion ascendente de infrarrojo. |
CA2828364A1 (en) | 2011-02-28 | 2013-02-28 | University Of Florida Research Foundation, Inc. | Photodetector and upconversion device with gain (ec) |
EP2727154B1 (en) | 2011-06-30 | 2019-09-18 | University of Florida Research Foundation, Inc. | A method and apparatus for detecting infrared radiation with gain |
EP3039724A4 (en) * | 2013-08-29 | 2017-06-21 | University of Florida Research Foundation, Inc. | Air stable infrared photodetectors from solution-processed inorganic semiconductors |
EP3155668B1 (en) * | 2014-06-16 | 2021-02-17 | B.G. Negev Technologies & Applications Ltd., at Ben-Gurion University | Swir to visible image up-conversion integrated device |
KR20180018660A (ko) | 2015-06-11 | 2018-02-21 | 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 | 단분산, ir-흡수 나노입자, 및 관련 방법 및 장치 |
EP3347915A4 (en) | 2015-09-11 | 2019-05-08 | University of Florida Research Foundation, Inc. | VERTICAL FIELD EFFECT TRANSISTOR |
WO2017044805A1 (en) * | 2015-09-11 | 2017-03-16 | University Of Florida Research Foundation, Incorporated | Light emitting phototransistor |
US10991915B2 (en) | 2016-01-29 | 2021-04-27 | University Of Florida Research Foundation, Incorporated | Organic light-emitting diodes comprising grating structures and light extraction layers |
JP2017175714A (ja) * | 2016-03-22 | 2017-09-28 | 公益財団法人神奈川科学技術アカデミー | 電流電圧測定システム及び電流電圧測定方法 |
CN108428801A (zh) * | 2018-03-13 | 2018-08-21 | 华南理工大学 | 一种有机上转换器件 |
JP7163803B2 (ja) * | 2019-02-01 | 2022-11-01 | 住友電気工業株式会社 | 半導体受光デバイス |
CN110265561A (zh) * | 2019-06-17 | 2019-09-20 | 深圳扑浪创新科技有限公司 | 一种纯量子点上转换发光器件及其制备方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11329736A (ja) * | 1998-05-20 | 1999-11-30 | Futaba Corp | 光変調鏡 |
JP2000349365A (ja) * | 1999-06-07 | 2000-12-15 | Futaba Corp | 光電流増倍素子 |
JP2001006876A (ja) * | 1999-06-25 | 2001-01-12 | Futaba Corp | 光−光変換素子 |
US20030052365A1 (en) | 2001-09-18 | 2003-03-20 | Samir Chaudhry | Structure and fabrication method for capacitors integratible with vertical replacement gate transistors |
US20040031965A1 (en) * | 2002-08-16 | 2004-02-19 | Forrest Stephen R. | Organic photonic integrated circuit using an organic photodetector and a transparent organic light emitting device |
US6869699B2 (en) * | 2003-03-18 | 2005-03-22 | Eastman Kodak Company | P-type materials and mixtures for electronic devices |
US7053412B2 (en) * | 2003-06-27 | 2006-05-30 | The Trustees Of Princeton University And Universal Display Corporation | Grey scale bistable display |
US6881502B2 (en) | 2003-09-24 | 2005-04-19 | Eastman Kodak Company | Blue organic electroluminescent devices having a non-hole-blocking layer |
US6972431B2 (en) * | 2003-11-26 | 2005-12-06 | Trustees Of Princeton University | Multilayer organic photodetectors with improved performance |
US7300731B2 (en) | 2004-08-10 | 2007-11-27 | E.I. Du Pont De Nemours And Company | Spatially-doped charge transport layers |
WO2007017475A1 (de) * | 2005-08-08 | 2007-02-15 | Siemens Aktiengesellschaft | Organischer photodetektor mit erhöhter empfindlichkeit, sowie verwendung eines triarylmin-fluoren-polymers als zwischenschicht in einem photodetektor |
WO2007102051A2 (en) * | 2005-08-25 | 2007-09-13 | Edward Sargent | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
JP2008016831A (ja) * | 2006-06-09 | 2008-01-24 | Sumitomo Chemical Co Ltd | 光−光変換デバイス |
JP5568305B2 (ja) * | 2006-09-29 | 2014-08-06 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | 赤外線検出および表示のための方法および装置 |
US20100044676A1 (en) * | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
US7821807B2 (en) * | 2008-04-17 | 2010-10-26 | Epir Technologies, Inc. | Nonequilibrium photodetectors with single carrier species barriers |
JP5258037B2 (ja) * | 2008-09-08 | 2013-08-07 | 国立大学法人京都大学 | 光電変換素子、その製造方法、及び太陽電池 |
KR20200142125A (ko) * | 2009-01-12 | 2020-12-21 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 전자/정공 차단 층 및 엑시톤 차단 층을 사용하는 유기 광기전력 전지 개방 회로 전압의 강화 |
TWI380490B (en) | 2009-05-05 | 2012-12-21 | Univ Nat Chiao Tung | Organic photosensitive photoelectric device |
RU2012126145A (ru) * | 2009-11-24 | 2013-12-27 | Юниверсити Оф Флорида Рисерч Фаундейшн, Инк. | Способ и устройство для восприятия инфракрасного излучения |
MX2012013643A (es) | 2010-05-24 | 2013-05-01 | Univ Florida | Metodo y aparato para proporcionar una capa de bloqueo de carga en un dispositivo de conversion ascendente de infrarrojo. |
RU2013127809A (ru) * | 2010-11-23 | 2014-12-27 | Юниверсити Оф Флорида Рисерч Фаундейшн, Инк. | Ик-фотодетекторы с высокой способностью к обнаружению при низком напряжении возбуждения |
CA2828364A1 (en) | 2011-02-28 | 2013-02-28 | University Of Florida Research Foundation, Inc. | Photodetector and upconversion device with gain (ec) |
-
2012
- 2012-02-28 CA CA2828364A patent/CA2828364A1/en not_active Abandoned
- 2012-02-28 AU AU2012299422A patent/AU2012299422A1/en not_active Abandoned
- 2012-02-28 US US13/407,094 patent/US8829498B2/en not_active Expired - Fee Related
- 2012-02-28 SG SG2013059795A patent/SG192277A1/en unknown
- 2012-02-28 WO PCT/US2012/026920 patent/WO2013028232A1/en active Application Filing
- 2012-02-28 RU RU2013139230/28A patent/RU2013139230A/ru not_active Application Discontinuation
- 2012-02-28 EP EP12825553.6A patent/EP2666191A4/en not_active Withdrawn
- 2012-02-28 CN CN201610090356.8A patent/CN105742395B/zh not_active Expired - Fee Related
- 2012-02-28 KR KR1020137025491A patent/KR20140025359A/ko active Search and Examination
- 2012-02-28 JP JP2013556797A patent/JP6219172B2/ja not_active Expired - Fee Related
- 2012-02-28 BR BR112013021833A patent/BR112013021833A2/pt not_active IP Right Cessation
-
2014
- 2014-08-19 US US14/463,546 patent/US9196661B2/en not_active Expired - Fee Related
- 2014-12-12 US US14/568,794 patent/US9214502B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
RU2013139230A (ru) | 2015-04-10 |
US8829498B2 (en) | 2014-09-09 |
EP2666191A1 (en) | 2013-11-27 |
JP2014514730A (ja) | 2014-06-19 |
US9196661B2 (en) | 2015-11-24 |
KR20140025359A (ko) | 2014-03-04 |
US20140217365A1 (en) | 2014-08-07 |
WO2013028232A8 (en) | 2013-09-19 |
WO2013028232A1 (en) | 2013-02-28 |
CN103443935B (zh) | 2016-03-16 |
US9214502B2 (en) | 2015-12-15 |
SG192277A1 (en) | 2013-09-30 |
CN105742395A (zh) | 2016-07-06 |
CN103443935A (zh) | 2013-12-11 |
JP6219172B2 (ja) | 2017-10-25 |
US20140353502A1 (en) | 2014-12-04 |
AU2012299422A1 (en) | 2013-09-12 |
CN105742395B (zh) | 2019-02-15 |
CA2828364A1 (en) | 2013-02-28 |
US20150171149A1 (en) | 2015-06-18 |
EP2666191A4 (en) | 2018-01-03 |
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